Page 1
tm
FDB28N30
D
G
S
D2-PAK
G
S
D
N-Channel MOSFET
300V, 28A, 0.129Ω
FDB28N30 N-Channel MOSFET
June 2007
TM
UniFET
Features
•R
• Low gate charge ( Typ. 39nC)
• Low Crss ( Typ. 35pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
MOSFET Maximum Ratings T
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P
D
, T
T
J
T
L
= 0.108Ω ( Typ.)@ VGS = 10V, ID = 14A
DS(on)
= 25oC unless otherwise noted*
C
Symbol Parameter Ratings Units
Drain to Source Voltage 300 V
Gate to Source Voltage ±30 V
-Continuous (T
-Continuous (T
(T
= 25oC) 250 W
C
- Derate above 25
STG
D r a i n C u r r e n t
D r a i n C u r r e n t - P u l s e d (Note 1) 112 A
Single Pulsed Avalanche Energy (Note 2) 588 mJ
Avalanche Current (Note 1) 28 A
Repetitive Avalanche Energy (Note 1) 25 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
= 25oC) 28
C
= 100oC) 19
C
o
C2.0W/
300
o
o
A
o
C
C
C
Thermal Characteristics
Symbol Parameter Ratings Units
R
θJC
* Thermal Resistance, Junction to Ambient* 40
θJA
R
θJA
*When mounted on the minimum pad size recommended (PCB Mount)
©2007 Fairchild Semiconductor Corporation
FDB28N30 Rev. A
Thermal Resistance, Junction to Case 0.5
Thermal Resistance, Junction to Ambient 62.5
o
C/WR
www.fairchildsemi.com1
Page 2
FDB28N30 N-Channel MOSFET
Package Marking and Ordering Information T
= 25oC unless otherwise noted
C
Device Marking Device Package Reel Size Tape Width Quantity
FDB28N30 FDB28N30TM D2-PAK 330mm 24mm 800
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
ΔBV
DSS
/ ΔT
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 300 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
I
= 250μA, Referenced to 25oC-0.4-V/
D
V
= 300V, V
DS
= 240V, TC = 125oC--10
V
DS
= 0V - - 1
GS
= 0V - - ±100 nA
DS
Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 14A - 0.108 0.129 Ω
V
Forward Transconductance
Input Capacitance
Output Capacitance - 305 405 pF
Reverse Transfer Capacitance - 35 50 pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 12 - nC
Gate to Drain “Miller” Charge - 17 - nC
= 40V, ID = 14A (Note 4)
DS
= 25V, VGS = 0V
V
DS
f = 1MHz
V
= 240V, ID = 28A
DS
V
= 10V
GS
( Note 4 , 5)
- 24.8 - S
- 1690 2250 pF
-3950nC
μA
o
C
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 135 280 ns
Turn-Off Delay Time - 79 168 ns
Turn-Off Fall Time - 69 148 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.5mH, I
3. I
≤ 28A, di/dt ≤ 200A/μs, VDD ≤ BV
SD
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 28 A
Maximum Pulsed Drain to Source Diode Forward Current - - 112 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 2.7 - μC
= 28A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
AS
, Starting TJ = 25°C
DSS
= 150V, ID = 28A
V
DD
R
= 25Ω
G
(N ote 4, 5)
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/μs (Not e 4)
F
= 28A - - 1.4 V
SD
= 28A
SD
-3580ns
- 279 - ns
FDB28N30 Rev. A
2
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Page 3
Typical Performance Characteristics
110
1
10
100
0.4
* Notes :
1. 250
μs Pulse Test
2. T
C
= 25oC
V
GS
= 10.0 V
8.0 V
7.0 V
6.5 V
6 V
5.5 V
I
D
,Drain Current[A]
VDS,Drain-Source Voltage[V]
0.5
246810
0.1
1
10
100
-55oC
150oC
* Notes :
1. V
DS
= 20V
2. 250
μs Pulse Test
25oC
I
D
,Drain Current[A]
VGS,Gate-Source Voltage[V]
0255075
0.10
0.15
0.20
0.25
0.30
* Note : TJ = 25oC
VGS = 20V
VGS = 10V
R
DS(on)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.0 0.5 1.0 1.5 2.0
1
10
100
Notes:
1. VGS = 0V
2. 250
μs Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
200
10
-1
10
0
10
1
0
1500
3000
4500
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
* Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
30
0 8 16 24 32 40
0
2
4
6
8
10
*Note: ID = 28A
VDS = 60V
V
DS
= 150V
V
DS
= 240V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDB28N30 N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDB28N30 Rev. A
3
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Page 4
Typical Performance Characteristics (Continued)
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. V
GS
= 0V
2. I
D
= 250μA
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. V
GS
= 10V
2. I
D
= 14A
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
110100
0.01
0.1
1
10
100
200
10μs
100μs
1ms
10ms
I
D
, Drain Current [A]
VDS, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25oC
2. T
J
= 150oC
3. Single Pulse
500
DC
25 50 75 100 125 150
0
5
10
15
20
25
30
I
D
, Drain Current [A]
TC, Case Temperature [oC]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
1E-3
0.01
0.1
1
0.01
0.1
0.2
0.05
0.02
* Notes :
1. Z
θJC
(t) = 0.5oC/W Max.
2. Duty Factor, D=t
1/t2
3. TJM - TC = PDM * Z
θJC
(t)
0.5
Single pulse
Thermal Response [Z
θJC
]
Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
FDB28N30 N-Channel MOSFET
Figure 11. Transient Thermal Response Curve
FDB28N30 Rev. A
4
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Page 5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDB28N30 N-Channel MOSFET
FDB28N30 Rev. A
5
www.fairchildsemi.com
Page 6
DUT
V
DS
+
_
Driver
R
G
Sam e Type
as DU T
V
GS
• dv/dt controlled by R
G
•ISDcontrolled by pulse period
V
DD
L
I
SD
10V
V
GS
( D riv e r )
I
SD
( D U T )
V
DS
( DUT )
V
DD
Body D iode
Forw ard V oltage D rop
V
SD
IFM, B ody Diode Forw ard C urrent
Body D iode R everse C urrent
I
RM
Body D iode R ecovery dv/dt
di/dt
D =
G ate P ulse W idth
Gate Pulse Period
--------------------------
DUT
V
DS
+
_
Driver
R
G
Sam e Type
as DU T
V
GS
• dv/dt controlled by R
G
•ISDcontrolled by pulse period
V
DD
LL
I
SD
10V
V
GS
( D riv e r )
I
SD
( D U T )
V
DS
( DUT )
V
DD
Body D iode
Forw ard V oltage D rop
V
SD
IFM, B ody Diode Forw ard C urrent
Body D iode R everse Current
I
RM
Body D iode Recovery dv/dt
di/dt
D =
G ate P ulse W idth
Gate Pulse Period
--------------------------
D =
G ate P ulse W idth
Gate Pulse Period
--------------------------
FDB28N30 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDB28N30 Rev. A
6
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Page 7
Mechanical Dimensions
10.00 ±0.20
10.00 ±0.20
(8.00)
(4.40)
1.27
±0.10
0.80 ±0.10
0.80 ±0.10
(2XR0.45)
9.90
±0.20
4.50 ±0.20
0.10 ±0.15
2.40 ±0.20
2.54 ±0.30
15.30 ±0.30
9.20 ±0.20
4.90 ±0.20
1.40 ±0.20
2.00 ±0.10
(0.75)
(1.75)
(7.20)
0°~3°
1.20 ±0.20
9.20 ±0.20
15.30 ±0.30
4.90 ±0.20
(0.40)
2.54 TYP 2.54 TYP
1.30
+0.10
–0.05
0.50
+0.10
–0.05
D2PAK
FDB28N30 N-Channel MOSFET
FDB28N30 Rev. A
7
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Page 8
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FDB28N30 N-Channel MOSFET
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,
SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b) support
or sustain life, and (c) whose failure to perform when properly
used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or system,
or to affect its safety or effectiveness.
injury of the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary First Production This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to
improve design.
Obsolete Not In Production This datasheet contains specifications on a product that has been dis-
continued by Fairchild Semiconductor.The datasheet is printed for reference information only.
Rev. I26
FDB28N30 Rev. A
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