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FDA69N25
250V N-Channel MOSFET
FDA69N25 250V N-Channel MOSFET
May 2006
TM
UniFET
Features
• 69A, 250V, R
• Low gate charge ( typical 77 nC)
• Low Crss ( typical 84pF)
•Fast switching
• Improved dv/dt capability
= 0.041Ω @VGS = 10 V
DS(on)
GSD
TO-3PN
FDA Series
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G
S
Absolute Maximum Ratings
Symbol Parameter FDA69N25 Units
V
DSS
V
DS(Avalanche)
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
, T
T
J
STG
T
L
Drain-Source Voltage 250 V
Repetitive Avalanche Voltage
Drain Current - Continuous (TC = 25°C) 69 A
- Continuous (T
Drain Current - Pulsed
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C) 480 W
- Derate above 25°C 3.84 W/°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
= 100°C) 44.2 A
C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
300 V
276 A
1894 mJ
69 A
48 mJ
4.5 V/ns
300 °C
Thermal Characteristics
Symbol Parameter FDA69N25 Units
R
θJC
R
θJA
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDA69N25 Rev. A
Thermal Resistance, Junction-to-Case 0.26 °C/W
Thermal Resistance, Junction-to-Ambient 40 °C/W
Page 2
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDA69N25 FDA69N25 TO-3PN -- -- 30
FDA69N25 250V N-Channel MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
∆T
J
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.64mH, IAS =69A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 69A, di/dt ≤200A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temp er ature
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 250 -- -- V
/
DSS
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.25 -- V/°C
Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V -- -- 1 µA
= 200 V, TC = 125°C -- -- 10 µA
V
DS
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0--5.0V
Static Drain-Source On-Resistance VGS = 10 V, ID = 34.5 A -- 0.034 0.041 Ω
Forward Transconductance VDS = 40 V, ID = 34.5 A (Note 4) -- 25 -- S
Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance -- 750 980 pF
f = 1.0 MHz
-- 3570 4640 pF
Reverse Transfer Capacitance -- 84 130 pF
Turn-On Delay Time VDD = 125 V, ID = 69A,
= 25 Ω
R
Turn-On Rise Time -Turn-Off Delay Time -Turn-Off Fall Time --
G
(Note 4, 5)
Total Gate Charge VDS = 200 V, ID = 69A,
= 10 V
V
Gate-Source Charge -Gate-Drain Charge --
GS
(Note 4, 5)
--
--
95 200
855 1720
130 270
220 450
77 100
24
37
-- nC
-- nC
Maximum Continuous Drain-Source Diode Forward Current -- -- 34 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 136 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 69 A -- -- 1.4 V
Reverse Recovery Time VGS = 0 V, IS = 69 A,
/ dt = 100 A/µs (Note 4)
dI
Reverse Recovery Charge -- 5.7 --
Starting TJ = 25°C
DSS,
F
-- 210 -- ns
ns
ns
ns
ns
nC
µC
FDA69N25 Rev. A
2 www.fairchildsemi.com
Page 3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
V
GS
Top : 15.0 V
10.0 V
, Drain Current [A]
I
10
10
D
10
2
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5 .5 V
1
0
-1
10
0
10
VDS, Drain-Source Voltage [V]
* Notes :
1. 250
2. T
10
1
µs Pulse Test
= 25°C
C
2
10
150°C
25°C
1
10
, Drain Current [A]
D
I
0
10
24681012
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
0.10
-55°C
* Notes :
1. V
2. 250
DS
= 40V
µs Pulse Test
FDA69N25 250V N-Channel MOSFET
2
10
0.08
0.06
VGS = 10V
VGS = 20V
[Ω], Drain-Source On-Resistance
0.04
DS(ON)
R
0 25 50 75 100 125 150 175 200
* Note : TJ = 25°C
ID, Drain Current [A]
1
10
150°C
, Reverse Drain Current [A]
DR
I
0
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
25°C
* Notes :
1. V
2. 250
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
9000
6000
3000
Capacitances [pF]
0
-1
10
C
oss
C
iss
C
rss
VDS, Drain-Source Voltage [V]
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
* Note ;
= 0 V
1. V
GS
2. f = 1 MHz
0
10
1
10
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 1020304050607080
VDS = 50V
VDS = 125V
VDS = 200V
* Note : ID = 69A
QG, Total Gate Charge [nC]
= 0V
GS
µs Pulse Test
FDA69N25 Rev. A
3 www.fairchildsemi.com
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
1.2
3.0
2.5
1.1
2.0
FDA69N25 250V N-Channel MOSFET
1.0
, (Normalized)
BV
DSS
0.9
* Notes :
1. V
2. I
Drain-Source Breakdown Voltage
0.8
-100 -50 0 50 100 150 200
TJ, Junction Temperature [°C]
= 0 V
GS
= 250µA
D
1.5
, (Normalized)
1.0
DS(ON)
R
0.5
Drain-Source On-Resistance
0.0
-100 -50 0 50 100 150 200
TJ, Junction Temperature [°C]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
3
10
2
10
1
10
10
, Drain Current [A]
D
I
10
10
0
-1
-2
0
10
Operation in This Area
is Limited by R
DS(on)
VDS, Drain-SourceVoltage[V]
10
µs
100
µs
1ms
10ms
100ms
DC
* Notes :
1. T
= 25 oC
C
= 150 oC
2. T
J
3. Single Pulse
1
10
2
10
80
70
60
50
40
30
, Drain Current [A]
D
I
20
10
0
25 50 75 100 125 150
TC, Case Temperature [oC]
* Notes :
1. V
2. I
= 10 V
GS
= 34.5 A
D
Figure 11. Transient Thermal Response Curve
0
10
D=0.5
-1
10
0.2
0.1
0.05
-2
0.02
10
(t), Thermal Response
0.01
?JC
Z
-5
10
FDA69N25 Rev. A
10
P
* Notes :
1. Z
θJC
2. Duty Factor, D=t
3. TJM - TC = PDM * Z
single pulse
-4
-3
10
-2
10
-1
10
t1, Square Wave Pulse Duration [sec]
4 www.fairchildsemi.com
DM
t
1
t
2
(t) = 0.26 0C/W Max.
10
1/t2
(t)
θJC
0
1
10
Page 5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
FDA69N25 250V N-Channel MOSFET
FDA69N25 Rev. A
Unclamped Inductive Switching Test Circuit & Waveforms
5 www.fairchildsemi.com
Page 6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDA69N25 250V N-Channel MOSFET
FDA69N25 Rev. A
6 www.fairchildsemi.com
Page 7
Mechanical Dimensions
FDA69N25 250V N-Channel MOSFET
TO-3PN
FDA69N25 Rev. A
Dimensions in Millimeters
7 www.fairchildsemi.com
Page 8
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,
SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
FDA69N25 250V N-Channel MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
FDA69N25 Rev. A
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I19
8 www.fairchildsemi.com
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