Page 1
FDA20N50 / FDA20N50_F109
D
G
S
GSD
TO-3P
FDA Series
500V N-Channel MOSFET
FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET
February 2012
TM
UniFET
Features
• 22A, 500V, R
• Low gate charge ( typical 45.6 nC)
•Low C
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
( typical 27 pF)
rss
= 0.23Ω @VGS = 10 V
DS(on)
Absolute Maximum Ratings
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Symbol Parameter FDA20N50 Unit
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
T
J, TSTG
T
L
* Drain current limited by maximum junction termperature.
Drain-Source Voltage 500 V
Drain Current - Continuous (TC = 25°C)
- Continuous (T
Drain Current - Pulsed
Gate-Source voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current (Note 1) 22 A
Repetitive Avalanche Energy (Note 1) 28.0 mJ
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
= 100°C)
C
(Note 1)
(Note 2)
(Note 3) 20 V/ns
22
13.2
88
1110 mJ
280
2.3
300 °C
Thermal Characteristics
tailored to
A
A
A
W
W/°C
Symbol Parameter Min. Max. Unit
R
θJC
R
θCS
R
θJA
©2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDA20N50 / FDA20N50_F109 Rev.C0
Thermal Resistance, Junction-to-Case -- 0.44 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
Page 2
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDA20N50 FDA20N50 TO-3P -- -- 30
FDA20N50 FDA20N50_F109 TO-3PN -- -- 30
FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min Typ Max Units
Off Characteristics
BV
DSS
ΔBV
/ ΔT
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 500 -- -- V
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V
I
= 250μA, Referenced to 25°C -- 0.50 -- V/°C
D
V
= 400V, TC = 125°C
DS
--
--
--
--
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V
Static Drain-Source
On-Resistance
Forward Transconductance VDS = 40V, ID = 11A
Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 355 465 pF
V
= 10V, ID = 11A -- 0.20 0.23 Ω
GS
(Note 4)
-- 24.6 -- S
-- 2400 3120 pF
f = 1.0MHz
Reverse Transfer Capacitance -- 27 -- pF
Turn-O n Delay Time VDD = 250V, ID = 20A
= 25Ω
R
Turn-O n Rise Time -- 375 760 ns
G
-- 95 200 ns
Turn-O ff Delay Tim e -- 100 210 ns
Turn-O ff Fall Time -- 105 220 ns
Total Gate Charge VDS = 400V, ID = 20A
V
= 10V
Gate-Source Charge -- 14.8 -- nC
GS
Gate-Drain Charge -- 21.6 -- nC
(Note 4, 5)
-- 45.6 59.5 nC
(Note 4, 5)
Maximum Continuous Drain-Source Diode Forward Current -- -- 20 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 80 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 22A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 20A
/dt =100A/μs (Note 4)
dI
Reverse Recovery Charge -- 7.20 -- μC
F
-- 507 -- ns
10
1
μA
μA
NOTES:
1. Repetitive Rating: Pulse width limite
2. L = 4.1mH, I
3. ISD ≤ 22A, di/dt ≤ 200A/μs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 30
5. Essentially Independent of Operating Temperature Typical Characteristics
= 22A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
AS
d by maximum junction temperature
, Starting TJ = 25°C
DSS
0μs, Duty Cycle ≤ 2%
FDA20N50 / FDA20N50_F109 Rev.C0
2 www.fairchildsemi.com
Page 3
Typical Performance Characteristics
10
-1
10
0
10
1
10
0
10
1
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
* Notes :
1. 250
μs Pulse Test
2. T
C
= 25oC
I
D
, Drain Current [A]
VDS, Drain-Source Voltage [V]
24681012
10
0
10
1
10
2
150oC
25oC
-55oC
* Notes :
1. V
DS
= 40V
2. 250
μs Pulse Test
I
D
, Drain Current [A]
VGS, Gate-Source Voltage [V]
0.20.40.60.81.01.21.41.6
10
0
10
1
150oC
*Notes :
1. V
GS
= 0V
2. 250
μs Pulse Test
25oC
I
DR
, Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
0 153045607590
0.0
0.2
0.4
0.6
0.8
VGS = 20V
VGS = 10V
* Note : TJ = 25oC
R
DS(ON)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0 1020304050
0
2
4
6
8
10
12
VDS = 250V
VDS = 100V
VDS = 400V
* Note : ID = 20A
V
GS
, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
10
-1
10
0
10
1
0
1000
2000
3000
4000
5000
6000
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
* Note :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variati
on vs. Source Current
and Temperatue
FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDA20N50 / FDA20N50_F109 Rev.C0
3 www.fairchildsemi.com
Page 4
Typical Performance Characteristics (Continued)
-100 - 50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. V
GS
= 0 V
2. I
D
= 250 μA
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
TJ, Junct ion Temperature [oC]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. V
GS
= 10 V
2. I
D
= 5.5 A
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperat ure [oC]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. V
GS
= 10 V
2. I
D
= 11 A
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
TJ, Juncti on Temperature [oC]
25 50 75 100 125 150
0
5
10
15
20
25
I
D
, Drain Current [A]
TC, Case Temperature [oC]
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
100 ms
1 ms
10 μs
DC
10 ms
100 μs
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25 oC
2. T
J
= 150 oC
3. Single Pulse
I
D
, Drain Current [A]
VDS, Drain-Source Voltage [V]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
* No tes :
1. Z
θJC
(t) = 0.44oC/W M ax.
2. D uty F ac to r, D = t
1/t2
3. TJM - TC = PDM * Z
θJC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
θJC
(t), Thermal Response
t1, S q uare W ave P u lse D u ra tion [s e c]
t
1
P
DM
t
2
FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
FDA20N50 / FDA20N50_F109 Rev.C0
Figure 11. Transient Thermal Response Curve
4 www.fairchildsemi.com
Page 5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET
FDA20N50 / FDA20N50_F109 Rev.C0
5 www.fairchildsemi.com
Page 6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET
FDA20N50 / FDA20N50_F109 Rev.C0
6 www.fairchildsemi.com
Page 7
Mechanical Dimensions
15.60
±0.20
4.80
±0.20
13.60
±0.20
9.60
±0.20
2.00
±0.20
3.00
±0.20
1.00
±0.20
1.40
±0.20
ø3.20
±0.10
3.80
±0.20
13.90
±0.20
3.50
±0.20
16.50
±0.30
12.76
±0.20
19.90
±0.20
23.40
±0.20
18.70
±0.20
1.50
+0.15
–0.05
0.60
+0.15
–0.05
5.45TYP
[5.45
±0.30
]
5.45TYP
[5.45
±0.30
]
TO-3P
FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET
Dimensions in Millimeters
FDA20N50 / FDA20N50_F109 Rev.C0
7 www.fairchildsemi.com
Page 8
Mechanical Dimensions
TO-3PN
FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET
FDA20N50 / FDA20N50_F109 Rev.C0
Dimensions in Millimeters
8 www.fairchildsemi.com
Page 9
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®
™
tm
tm
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intended to be an exhaustive list of all such trademarks.
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SignalWise™
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®
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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WHICH COVERS THESE PRODUCTS.
FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FDA20N50 / FDA20N50_F109 Rev.C0
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
9 www.fairchildsemi.com
Rev. I61
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