Datasheet FDA16N50, FDA16N50-F109 Datasheet (Fairchild)

FDA16N50 / FDA16N50_F109

500V N-Channel MOSFET

FDA16N50 / FDA16N50_F109 500V N-Channel MOSFET

July 2007

TM

UniFET

Features

• 16.5A, 500V, R

• Low gate charge ( typical 32 nC)

•Low C

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

( typical 20 pF)

rss

= 0.38Ω @VGS = 10 V

DS(on)

GSD

TO-3P

FDA Series

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

D

G

S

Absolute Maximum Ratings

Symbol Parameter FDA16N50 Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

T

J, TSTG

T

L

Drain-Source Voltage 500 V Drain Current - Continuous (TC = 25°C)

- Continuous (T Drain Current - Pulsed Gate-Source voltage ±30 V Single Pulsed Avalanche Energy Avalanche Current (Note 1) 16.5 A Repetitive Avalanche Energy (Note 1) 20.5 mJ

Power Dissipation (TC = 25°C)

- Derate above 25°C Operating and Storage Temperature Range -55 to +150 °C Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

= 100°C)

C

(Note 1)

(Note 2)

(Note 3) 4.5 V/ns

16.5

9.9 66 A

780 mJ

205

2.1

300 °C

A A

W

W/°C

Thermal Characteristics

Symbol Parameter Typ Max Unit

R

θJC

R

θCS

R

θJA

FDA16N50 / FDA16N50_F109 Rev. B1

Thermal Resistance, Junction-to-Case -- 0.6 °C/W Thermal Resistance, Case-to-Sink Typ. 0.24 -- °C/W Thermal Resistance, Junction-to-Ambient -- 40 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDA16N50 FDA16N50 TO-3P - - 30 FDA16N50 FDA16N50_F109 TO-3PN - - 30

FDA16N50 / FDA16N50_F109 500V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics

BV

DSS

∆BV / ∆T

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 500 -- -- V Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V

I

= 250µA, Referenced to 25°C--0.5--V/°C

D

V

= 400V, TC = 125°C

DS

--

1

10

µA µA

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250µA3.0--5.0V Static Drain-Source

On-Resistance Forward Transconductance VDS = 40V, ID = 8.3A

Input Capacitance VDS = 25V, VGS = 0V, Output Capacitance -- 235 310 pF

V

= 10V, ID = 8.3A -- 0.31 0.38 Ω

GS

(Note 4)

-- 23 -- S

-- 1495 1945 pF

f = 1.0MHz

Reverse Transfer Capacitance -- 20 30 pF

Turn-On Delay Time VDD = 250V, ID = 16A

R

= 25Ω

Turn-On Rise Time -- 150 310 ns

G

-- 40 90 ns

Turn-Off Delay Time -- 65 140 ns Turn-Off Fall Time -- 80 170 ns Total Gate Charge VDS = 400V, ID = 16A

V

= 10V

Gate-Source Charge -- 8.5 -- nC

GS

Gate-Drain Charge -- 14 -- nC

(Note 4, 5)

-- 32 45 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 9.2 A Maximum Pulsed Drain-Source Diode Forward Current -- -- 37 A Drain-Source Diode Forward Voltage VGS = 0V, IS = 16.5A -- -- 1.4 V Reverse Recovery Time VGS = 0V, IS = 16A

dI

/dt =100A/µs (Note 4)

Reverse Recovery Charge -- 5.0 -- µC

F

-- 490 -- ns

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 5.1mH, IAS = 16.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 16.5A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

, Starting TJ = 25°C

DSS

FDA16N50 / FDA16N50_F109 Rev. B1

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FDA16N50 / FDA16N50_F109 500V N-Channel MOSFET

-55oC

, Drain Current [A] I

10

D

-1

10

V

2

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

1

Bottom : 5.5 V

0

-1

10

GS

0

10

VDS, Drain-Source Voltage [V]

* Notes :

1. 250

2. T

1

10

µs Pulse Test

= 25oC

C

1

10

150oC

25oC

, Drain Current [A]

D

I

0

10

24681012

VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

VGS = 10V

1

10

0.6

0.5

0.4

* Notes :

1. V

2. 250

= 40V

DS

µs Pulse Test

0.3

[Ω], Drain-Source On-Resistance

DS(ON)

0.2

R

0 5 10 15 20 25 30 35 40

VGS = 20V

* Note : TJ = 25oC

ID, Drain Current [A]

, Reverse Drain Current [A]

DR

I

0

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

150oC

25oC

VSD, Source-Drain voltage [V]

* Notes :

1. V

2. 250

= 0V

GS

µs Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

4000

3000

C

oss

2000

Capacitanc es [pF]

1000

0

-1

10

C

iss

C

rss

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

* Note ;

1. V

= 0 V

GS

2. f = 1 MHz

0

10

1

10

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 10203040

VDS = 100V VDS = 250V

VDS = 400V

* Note : ID = 16A

QG, Total Gate Charge [nC]

FDA16N50 / FDA16N50_F109 Rev. B1

3 www.fairchildsemi.com

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

FDA16N50 / FDA16N50_F109 500V N-Channel MOSFET

1.2

1.1

1.0

, (Normalized)

DSS

BV

0.9

Drain-Source Breakdow n Vol t age

0.8

-100 -50 0 50 100 150 200

* Notes :

1. V

2. I

TJ, Junction Temperature [oC]

= 0 V

GS

= 250 µA

D

3.0

2.5

2.0

1.5

, (Normalized)

1.0

DS(ON)

R

0.5

Drain-Source On-Resistance

0.0

-100 -50 0 50 100 150 200

TJ, Junction Temperature [oC]

* Notes :

1. V

= 10 V

GS

2. I

= 8.3 A

D

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature

10

2

1

0

Operation in This Area is Limited by R

DS(on)

20

10 µs

100 ms

DC

100 µs

1 ms

10 ms

15

10

, Drain Current [A] I

D

-1

10

-2

10

0

10

1

10

* Notes :

= 25 oC

1. T

C

2. T

= 150 oC

J

3. Single Pulse

2

10

VDS, Drain-Source Voltage [V]

, Drain Current [A]

D

I

5

0

25 50 75 100 125 150

TC, Case Temperature [oC]

Figure 11. Transient Thermal Response Curve

0

10

D=0.5

0.2

-1

10

0.1

0.05

0.02

(t), Thermal Response

0.01

θJC

Z

-2

10

-5

10

-4

10

single pulse

10

-3

t1, Square Wave Pulse Duration [sec]

* Notes :

(t) = 0.6 oC/W Max.

1. Z

θJC

2. D u ty F a c to r, D = t

3. TJM - TC = PDM * Z

-2

10

-1

10

1/t2

(t)

θJC

0

10

1

10

FDA16N50 / FDA16N50_F109 Rev. B1

4 www.fairchildsemi.com

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FDA16N50 / FDA16N50_F109 500V N-Channel MOSFET

FDA16N50 / FDA16N50_F109 Rev. B1

Unclamped Inductive Switching Test Circuit & Waveforms

5 www.fairchildsemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms

FDA16N50 / FDA16N50_F109 500V N-Channel MOSFET

FDA16N50 / FDA16N50_F109 Rev. B1

6 www.fairchildsemi.com

Mechanical Dimensions

0

ø

5 5

5

15.60

13.60

3.20

±0.10

9.60

±0.20

TO-3P

±0.20

3.80

4.80

1.50

±0.2

+0.1 –0.0

FDA16N50 / FDA16N50_F109 500V N-Channel MOSFET

±0.20

18.70

±0.20

12.76

±0.20

19.90

±0.20

23.40

13.90

2.00

±0.20

3.00

1.00

±0.20

3.50

±0.30

1.40

±0.2

16.50

5.45TYP

[5.45

±0.30

]

5.45TYP

[5.45

±0.30

]

0.60

+0.1 –0.0

FDA16N50 / FDA16N50_F109 Rev. B1

7 www.fairchildsemi.com

Dimensions in Millimeters

Mechanical Dimensions

FDA16N50 / FDA16N50_F109 500V N-Channel MOSFET

TO-3PN

FDA16N50 / FDA16N50_F109 Rev. B1

Dimensions in Millimeters

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FDA16N50 / FDA16N50_F109 500V N-Channel MOSFET

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data; supplementary data will be pub-

Preliminary First Production

lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

This datasheet contains specifications on a product that has been discontin-

Obsolete Not In Production

ued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I30

www.fairchildsemi.com9

FDA16N50 / FDA16N50_F109 Rev. B1