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®
STTH806TTI
TURBOSWITCH Tandem 600V ULTRA-FAST BOOST DIODE
MAJOR PRODUCTS CHAR ACTERISTICS
I
F(AV)
V
RRM
8 A
600 V (in series)
Tj (max) 150 °C
V
(max) 2.6 V
F
(typ.) 4 A
I
RM
FEATURES AND BENE FITS
ESPECIALLY SUITED AS BOOST DIODE IN
CONTINUOUS MODE POWER FACTOR
CORRECTORS AND HARD SWITCHING
CONDITIONS.
DESIGNED FOR HIGH DI/DT OPERATION.
ULTRA-FAST RECOVERY CURRENT TO
COMPETE WITH GaAs DEVICES. SIZE
DIMINUTION OF MOSFET AND HEATSINKS
ALLOWED.
INTERNAL CERAMIC INSULATED PACKAGE
ALLOWS FLEXIBLE HEATSINKING ON
COMMON OR SE PAR AT E HEAT SINK .
MATCHED DIODES FOR TYPICAL PFC
APPLICATION WITHOUT VOLTAGE BALANCE
NETWORK.
INSULATED VERSION: :
Insulated voltage = 2500 V
(RMS )
Capacitance = 7 pF
123
3
2
1
Insulated TO-220AB
DESCRIPTION
The TURBOSWITCH "H" is an ultra high
performance diode composed of two 300V dice
in series. TURBOSWITCH "H" family drastically
cuts losses in the associated MOSFET when run at
F
/dt.
high dI
ABSOLUTE RATINGS (limiting values for both diodes in series)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
FSM
T
stg
Tj
TM: TURBOSWITCH is a trademark of STMicroelectronics
November 1999 - Ed: 3A
Repetitive peak reverse voltage
RMS forward current
Surge non repetitive forward current tp = 10 ms sinusoidal
Storage temperature range
Maximum operating junction temperature
600 V
14 A
80 A
-65 +150 °C
+ 150 °C
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STTH806TTI
THERMAL AND POWER DATA
Symbol Parameter Test conditions Value Unit
R
R
R
th (j-c)
th (c)
th (j-c)
P
Junction to case thermal resistance Per diode
Junction to case thermal resistance Total
1
Conduction power dissipation for
both diodes
Coupling
I
= 8 A δ = 0.5
F(AV)
Tc = 80°C
STATIC ELECTRICAL CHARACTE RISTICS (for both diodes)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
5 °C/W
0.2
2.6
27 W
*
I
R
V
F
Reverse leakage
current
**
Forward voltage drop I
V
R
= V
RRM
Tj = 25 °C
Tj = 125°C
= 8 A Tj = 25°C
F
Tj = 125°C
15 100
2.1 2.6
10 µA
3.6 V
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 1.8 x I
F(AV)
+ 0.1 I
F2(RMS)
RECOVERY CHARA CTERISTICS
Symbol Tests Conditions Min. Typ. Max. Unit
trr
I
RM
S
factor
= 0.5 A Irr = 0.25 A IR = 1 A Tj = 25°C
I
F
I
= 1 A dIF/dt = - 50 A/µs VR = 30 V
F
VR = 400 V IF = 8 A dIF/dt = -200 A/µs Tj = 125°C
13 ns
30
45.5 A
0.4 -
TURN-ON SWITCHING CHARACT ERISTICS
Symbol Tests Conditions Min. Typ. Max. Unit
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tfr
V
FP
= 8 A dIF/dt = 100 A/µs,
I
F
measured at 1.1 x V
max
F
Tj = 25°C
IF = 8 A dIF/dt = 100 A/µs Tj = 25°C
200 ns
7V
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STTH806TTI
Fig. 1: Conduction losses versus average curr ent.
P1(W)
30
25
20
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
15
10
5
IF(av) (A)
0
012345678910
δ
=tp/T
T
tp
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
δ = 0.2
0.4
δ = 0.1
0.2
Single pulse
0.0
1E-3 1E-2 1E-1 1E+0
tp(s)
δ
=tp/T
T
tp
Fig. 2: Forward voltage drop versus forward
current.
IFM(A)
100
10
Tj=125°C
Typical values
Tj=125°C
Maximum values
Tj=25°C
Maximum values
VFM(V)
1
012345678
Fig. 4: Peak reverse recovery current versus
dI
/dt (90% confidence).
F
IRM(A)
10
VR=400V
Tj=125°C
8
6
4
2
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
Fig. 5: Reverse recov ery time versu s dI
/dt (90%
F
confidence).
trr(ns)
80
70
60
50
40
IF=2*IF(av)
IF=IF(av)
30
20
10
0
0 50 100 150 200 250 300 350 400 450 500
IF=0.5*IF(av)
dIF/dt(A/µs)
VR=400V
Tj=125°C
Fig. 6: Reverse charges versus dI
/dt (90%
F
confidence).
Qrr(nC)
140
120
VR=400V
Tj=125°C
100
80
60
40
20
0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
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STTH806TTI
Fig. 7: Softness factor versus dI
/dt (typical
F
values).
S factor
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
IF<2xIF(av)
VR=400V
Tj=125°C
Fig. 9: Transient peak forward voltage versus
dI
/dt (90% confidence).
F
VFP(V)
20
IF=IF(av)
18
Tj=125°C
16
14
12
10
8
6
4
2
0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
Fig. 8: Relative variation of dynamic parameters
vers us junc tion temper ature (refer ence : Tj = 12 5° C) .
2.6
2.4
2.2
2.0
S factor
1.8
1.6
1.4
1.2
1.0
0.8
0.6
IRM
0.4
0.2
0.0
25 50 75 100 125
Fig. 10: Forward re covery time vers us dI
Tj(°C)
/dt (90%
F
confidence).
tfr(ns)
300
250
200
150
100
50
0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
VFR=1.1*VF max.
IF=IF(av)
Tj=125°C
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Page 5
PACKAGE MECHANICAL DAT A
TO-220AB
B
L
I
A
l4
a1
l3
l2
a2
b1
e
STTH806TTI
C
b2
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 15.20 15.90 0.598 0.625
F
a1 3.50 4.20 0.137 0.165
a2 13.00 14.00 0.511 0.551
B 10.00 10.40 0.393 0.409
b1 0.61 0.88 0.024 0.034
b2 1.23 1.32 0.048 0.051
C 4.40 4.60 0.173 0.181
c2
c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107
e 2.40 2.70 0.094 0.106
F 6.20 6.60 0.244 0.259
I 3.75 3.85 0.147 0.151
I4 16.40 0.646
L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
M
c1
l3 1.14 1.70 0.044 0.066
M2.60 0.102
DIMENSIONS
Ordering code Marking Package Weight Base qty Delivery mode
STTH806TTI STTH806TTI TO-220AB 2.3 g. 50 Tube
Cooling method: C
Recommended torque value: 0.8 N.m.
Maximum torque value: 1 N.m.
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwi se un der any pat ent or patent rights of STMic roelec tronics. S pecifications ment ioned in t his publ ication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products ar e not authorized for use as critical components in l i fe s upport devices or systems without expres s written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroe lectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reser ved.
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