Datasheet STN4402 Datasheet (Stanson) [ru]

Page 1
STN44
STN44
STN44
STN44 0
0
0
0 2
2
2
2
N Channel Enhancement Mode MOSFET
12 A
DESCRIPTION
FEATURE
FEATURE
FEATURE
FEATURE
3 0V/ 12 A, R
DS(ON)
= 13 m Ω (Typ.)
@V GS = 10V
30V/ 10 A, R
DS(ON)
= 18 m Ω
@V GS = 4.5 V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum DC current capability SOP-8 package design
STN44 0 2
Y A
DESCRIPTION
DESCRIPTION
DESCRIPTION
STN44 0 2 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery power ed circuits where high-side switching.
PIN
CONFIGURATION
PIN
CONFIGURATION
PIN
PIN CONFIGURATION
CONFIGURATION
SOP-8
SOP-8
SOP-8
SOP-8
PART
PART
PART
PART MARKING SOP-8
SOP-8
SOP-8
SOP-8
Y
Y
Y
Y
MARKING
MARKING
MARKING
Year
Year
Year
Year Code
Code
Code
Code A
A
Process
A
Process
A
Process
Process Code
Code
Code
Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN44 0 2 200 9 . V1
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STN44
STN44
STN44
STN44 0
0
0
0 2
2
2
2
N Channel Enhancement Mode MOSFET
12 A
ABSOULTE
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Typical
Typical
Typical
Typical
Unit
Unit
Unit
Unit
Drain-Source Voltage
VDSS
3 0
V
Gate-Source Voltage
VGSS
± 20
V
Continuous Drain Current (TJ=150
)
TA=25 TA=70
ID
12 10
A
Pulsed Drain Current
IDM30A
Continuous Source Current (Diode Conduction)
IS
2.3
A
Power Dissipation
TA=25 TA=70
PD
2. 5
1.6
W
Operation Junction Temperature
TJ
-55/ 150
Storgae Temperature Range
TSTG
-55/150
Thermal Resistance-Junction to Ambient
R θ JA
8 0
/W
ABSOULTE
ABSOULTE
ABSOULTE MAXIMUM
MAXIMUM
MAXIMUM
MAXIMUM RATINGS
RATINGS
RATINGS
RATINGS (Ta = 25
Unless otherwise noted )
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN44 0 2 200 9 . V1
Page 3
STN44
STN44
STN44
STN44 0
0
0
0 2
2
2
2
N Channel Enhancement Mode MOSFET
12 A
ELECTRICAL
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol

Condition

Condition
Condition
Condition
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Max
Max
Max
Max
Unit
Unit
Unit
Unit

Static

Static
Static
Static
Drain-Source Breakdown Voltage
V
(BR)DSSVGS
=0V,ID=250uA
30
V
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
,ID= 2 50uA
1.0
3.0
V
Gate Leakage Current
I
GSSVDS
=0V,V
GS
= ± 20V
± 100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V,V
GS
=0V
1
uA
V
DS
= 24 V,V
GS
=0V
TJ=85
5
On-State Drain Current
I
D(on)
V
DS
5V,V
GS
= 10V
25
A
Drain-source On­Resistance
R
DS(on)
V
GS
=10V,ID= 12 A
V
GS
= 4.5 V,ID= 10 A
101313 18
m Ω
Forward Transconductance
gfs
V
DS
=15V,ID= 6.2A V
13
S
Diode Forward Voltage
VSDIS=2.3A,V
GS
=0V
0.8
1.2VDynamic

Dynamic

Dynamic
Dynamic
Total Gate Charge
Q
g
V
DS
=15V,V
GS
=10V
ID≡ 2 A
16
24
nC
Gate-Source Charge
Qgs4.2
Gate-Drain Charge
Q
gd
2.5
Input Capacitance
C
iss
V DS ==15V,VGS=0V
F=1MHz
13 50
pF
Output Capacitance
C
oss
2 58
Reverse Transfer C apacitance
C
rss
150
Turn-On Time
t
d(on)
tr
V
DD
=15V,RL=15 Ω
ID= 5.0 A,V
GEN
=-10V
RG= 1 Ω
15
20
nS
6
1 6
Turn-Off Time
t
d(off)
tf
2 0
4 0
12
20
ELECTRICAL
ELECTRICAL
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS ( Ta = 25
Unless otherwise noted )
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN44 0 2 200 9 . V1
Page 4
STN44
STN44
STN44
STN44 0
0
0
0 2
2
2
2
N Channel Enhancement Mode MOSFET
12 A
TYPICAL
TYPICAL
TYPICAL

TYPICAL CHARACTERICTICS

CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN44 0 2 200 9 . V1
Page 5
STN44
STN44
STN44
STN44 0
0
0
0 2
2
2
2
N Channel Enhancement Mode MOSFET
12 A
TYPICAL
TYPICAL
TYPICAL

TYPICAL CHARACTERICTICS

CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN44 0 2 200 9 . V1
Page 6
STN44
STN44
STN44
STN44 0
0
0
0 2
2
2
2
N Channel Enhancement Mode MOSFET
12 A
PACKAGE
PACKAGE
PACKAGE
PACKAGE OUTLINE
OUTLINE
OUTLINE
OUTLINE SOP-8P
SOP-8P
SOP-8P
SOP-8P
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN44 0 2 200 9 . V1
Page 7
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