
STN44
STN44
STN44
STN44 0
0
0
0 2
2
2
2
N Channel Enhancement Mode MOSFET
12 A
DESCRIPTION
FEATURE
FEATURE
FEATURE
FEATURE
3 0V/ 12 A, R
DS(ON)
= 13 m Ω (Typ.)
@V GS = 10V
30V/ 10 A, R
DS(ON)
= 18 m Ω
@V GS = 4.5 V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and
maximum DC current capability
SOP-8 package design
DESCRIPTION
DESCRIPTION
DESCRIPTION
STN44 0 2 is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as power management and other
battery power ed circuits where high-side switching.
PIN
CONFIGURATION
PIN
CONFIGURATION
PIN
PIN CONFIGURATION
CONFIGURATION
SOP-8
SOP-8
SOP-8
SOP-8
�
�
�
�
�
PART
PART
PART
PART MARKING
SOP-8
SOP-8
SOP-8
SOP-8
Y
Y
Y
Y
MARKING
MARKING
MARKING
Year
Year
:
Year
Year Code
Code
Code
Code A
A
Process
A
Process
:
A
Process
Process Code
Code
Code
Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN44 0 2 200 9 . V1

STN44
STN44
STN44
STN44 0
0
0
0 2
2
2
2
N Channel Enhancement Mode MOSFET
12 A
ABSOULTE
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Typical
Typical
Typical
Typical
Continuous Drain Current (TJ=150
℃
)
Continuous Source Current (Diode Conduction)
Operation Junction Temperature
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
ABSOULTE
ABSOULTE
ABSOULTE MAXIMUM
MAXIMUM
MAXIMUM
MAXIMUM RATINGS
RATINGS
RATINGS
RATINGS (Ta = 25
℃
Unless otherwise noted )
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN44 0 2 200 9 . V1

STN44
STN44
STN44
STN44 0
0
0
0 2
2
2
2
N Channel Enhancement Mode MOSFET
12 A
ELECTRICAL
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Condition
Condition
Condition
Condition
Static
Static
Static
Static
Drain-Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
V
DS
= 24 V,V
GS
=0V
TJ=85 ℃
Drain-source OnResistance
V
GS
=10V,ID= 12 A
V
GS
= 4.5 V,ID= 10 A
V
DS
=15V,V
GS
=10V
ID≡ 2 A
Reverse
Transfer C apacitance
V
DD
=15V,RL=15 Ω
ID= 5.0 A,V
GEN
=-10V
RG= 1 Ω
ELECTRICAL
ELECTRICAL
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS ( Ta = 25
℃
Unless otherwise noted )
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN44 0 2 200 9 . V1

STN44
STN44
STN44
STN44 0
0
0
0 2
2
2
2
N Channel Enhancement Mode MOSFET
12 A
TYPICAL
TYPICAL
TYPICAL
TYPICAL CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN44 0 2 200 9 . V1

STN44
STN44
STN44
STN44 0
0
0
0 2
2
2
2
N Channel Enhancement Mode MOSFET
12 A
TYPICAL
TYPICAL
TYPICAL
TYPICAL CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN44 0 2 200 9 . V1

STN44
STN44
STN44
STN44 0
0
0
0 2
2
2
2
N Channel Enhancement Mode MOSFET
12 A
PACKAGE
PACKAGE
PACKAGE
PACKAGE OUTLINE
OUTLINE
OUTLINE
OUTLINE SOP-8P
SOP-8P
SOP-8P
SOP-8P
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN44 0 2 200 9 . V1