Datasheet STN3NE06L Datasheet (SGS Thomson Microelectronics)

Page 1
®
N - CHANNEL 60V - 0.10 - 3A - SOT-223
TYPE V
DSS
STN3NE06L 60 V < 0.120 3 A
R
DS(on)
I
D
STN3NE06L
STripFET POWER MOSFET
PRELIMINARY DATA
TYPICAL R
EXCEPTI ON AL dv/dt CAP AB ILI TY
100 % AVALANCHE TESTED
APPLICATION ORIENT ED
DS(on)
= 0.10
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size" stip-based process. The resulting transis­tor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a re­markable manufacturing reproducibility .
APPLICATIONS
DC MOTOR CONTROL (DISK DRIVES,etc.)
DC-DC & DC-AC CONVERT E RS
SYNCHRONOUS RECTIFICATION
2
3
2
1
SOT-223
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt(
T
(•) Pulse width limited by safe operating area (1) ISD 12 A, di/dt 200 A/µs, VDD V
New RDS (on) spec. starting from JULY 98
August 1998
Drain-source Voltage (VGS = 0) 60 V
DS
Drain- gate Voltage (RGS = 20 k)
DGR
Gate-source Voltage ± 20 V
GS
Drain Current (continuous) at Tc = 25 oC3A
I
D
Drain Current (continuous) at Tc = 100 oC1.8A
I
D
60 V
() Drain Current (pulsed) 12 A
Total Dissipation at Tc = 25 oC2.5W
tot
Derating Factor 0.02 W/
1) Peak Diode Recovery voltage slope 6 V/ns
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
, Tj T
(BR)DSS
JMAX
o
C
o
C
o
C
1/5
Page 2
STN3NE06L
THERMAL DATA
R
thj-pcb
R
thj-amb
Thermal Resistance Junction-PC Board Max Thermal Resistance Junction-ambient Max (Surface Mounted)
T
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
ma x)
j
DD
= 25 V)
50 60
260
3A
20 mJ
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
60 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage Drain Current (V
GS
Gate-body Leakage Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125
DS
o
C
V
= ± 20 V
GS
1
10
± 100 nA
ON ()
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
1 1.7 2.5 V
Voltage
R
DS(on)
I
D(on)
Static Drain-source On Resistance
VGS = 10 V ID = 6A V
= 5 V ID = 6A
GS
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
0.080
3A
0.1
0.100
0.12
DYNAMIC
µA µA
Ω Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
() Forward
fs
VDS > I
D(on)
x R
DS(on)max
ID = 1.5 A 1 3 S
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
V
= 25 V f = 1 MHz V
DS
= 0 V 700
GS
100
30
960 140
45
Capacitance
2/5
pF pF pF
Page 3
STN3NE06L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING O N
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
(di/dt)
Q Q Q
SWITCHING O F F
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
SOURCE DRAIN DIO DE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % () Pulse width limited by safe operating area
Turn-on Time Rise Time
t
r
Turn-on Current Slope V
on
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
Off-voltage Rise Time Fall Time
t
f
Cross-over Time
c
Source-drain Current
()
Source-drain Current
V
= 30 V ID = 6 A
DD
RG = 4.7 VGS = 5 V
= 25 V ID = 6 A
DD
= 4.7 VGS = 10 V
R
G
VDD = 40 V ID = 12 A V
V
= 48 V ID = 12 A
DD
= 4.7 VGS =5 V
R
G
= 5 V 13
GS
17 35
23 50
200 A/µs
18 nC 6 5
9
18 30
12
25
45
3
12
(pulsed)
() Forward On Voltage ISD = 3 A VGS = 0 1.5 V
Reverse Recovery
rr
Time Reverse Recovery
rr
I
= 12 A di/dt = 100 A/µs
SD
V
= 25 V Tj = 150 oC
DD
65
0.13 Charge Reverse Recovery
4
Current
ns ns
nC nC
ns ns ns
A A
ns
µC
A
3/5
Page 4
STN3NE06L
SOT-223 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
a 2.27 2.3 2.33 89.4 90.6 91.7
b 4.57 4.6 4.63 179.9 181.1 182.3
c 0.2 0.4 0.6 7.9 15.7 23.6
d 0.630.650.6724.825.626.4
e1 1.5 1.6 1.7 59.1 63 66.9
e4 0.32 12.6
f 2.9 3 3.1 114.2 118.1 122.1
g 0.67 0.7 0.73 26.4 27.6 28.7
l1 6.7 7 7.3 263.8 275.6 287.4
l2 3.5 3.5 3.7 137.8 137.8 145.7
L 6.3 6.5 6.7 248 255.9 263.8
mm mils
L
e1
a
b
f
C
l1
B
C
E
g
d
l2
c
e4
P008B
4/5
Page 5
STN3NE06L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third p arties w hich may re sult from its use. No lice nse is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroel ectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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