Datasheet STGD3NB60KD Datasheet (ST)

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SHORT CIRCUIT PROOF PowerMESH™ IGBT

STGD3NB60KD

N-CHANNEL 3A - 600V - DPAK

TYPE V

CES

V

CE(sat)

I

C

STD3NB60KD 600 V < 2.8 V3A

■ HIGH INPUTIMPEDANCE(VOLTAGE DRIVEN)

■ LOW ON-VOLTAGE DROP (V

■ LOW ON-LOSSES

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

■ OFF LOSSES INCLUDE TAIL CURRENT

■ VERY HIGH FREQUENCY OPERATION

■ SHORT CIRCUIT RATED

■ LATCH CURRENT FREE OPERA TION

■ CO-PACKAGED WITH TURBOSWITCH™

cesat

)

ANTIPARALLEL DIODE

DESCRIPTION

Using the latest h igh voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH

™

IGBTs, with outstanding
performances. The suffix “K” identifies a fam ily
optimized for high frequency motor cont rol
applications with short circuit withstand capability.

APPLICATIONS

■ HIGH FREQUENCY MOTOR CONTROLS

■ SMPS and PFC

3

1

DPAK

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CES

V

ECR

V

GE

I

C

I

C

I

CM

Tsc Short Circuit Withstand 10

P

TOT

T

stg

T

j

() Pulse width limited by safe operating area

Collector-Emitter Voltage (VGS=0)

600 V
Emitter-Collector Voltage 20 V
Gate-Emitter Voltage ±20 V
Collector Current (continuous) at TC=25°C
Collector Current (continuous) at TC=100°C

()

Collector Current (pulsed) 24 A

Total Dissipation at TC= 25°C

6A
3A

35 W
Derating Factor 0.28 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

µs

1/9April 2003

STGD3NB60KD

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max 3.57 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W

Rthc-h Thermal Resistance Case-heatsink Typ 0.5 °C/W

ELECTRICAL CHARACTERISTICS (T

= 25 °C UNLESS O THERWISE SPECIFIED)

CASE

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

BR(CES)

Collectro-Emitter Breakdown

IC= 250 µA, VGE= 0 600 V

Voltage

I

CES

I

GES

Collector cut-off

=0)

(V

GE

Gate-Emitter Leakage
Current (V

CE

=0)

V

= Max Rating, TC=25°C

CE

VCE= Max Rating, TC= 125 °C
V

=±20V,VCE= 0 ±100 nA

GE

10 µA

100 µA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GE(th)

V

CE(sat)

Gate Threshold Voltage
Collector-Emitter Saturation

Voltage

V

CE=VGE,IC

VGE=15V,IC=3A
VGE=15V,IC= 3 A, Tj =125°C

= 250µA

57V

2.4 2.8 V

1.9 V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

g

fs

C

ies

C

oes

C

res

Q

g

Q

ge

Q

gc

Forward Transconductance
Input Capacitance

Output Capacitance
Reverse Transfer
Capacitance

Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge

tscw Short Circuit Withstand Time V

=25V,IC=3 A

CE

=25V,f=1MHz,VGE= 0 235

V

CE

1.3 2.4 S

VCE= 480V,IC=3A,
V

=15V

GE

= 0.5 BVces , VGE=15V,

ce

10 µs

Tj = 125°C , RG=10Ω

33

6.6

21

6

7.6

27

pF
pF
pF

nC
nC
nC

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

(di/dt)

r

Turn-on Delay Time
Rise Time

Turn-on Current Slope VCC= 480 V, IC=7ARG=10Ω

on

Eon Turn-on Switching Losses 37 µJ

2/9

VCC=480V,IC=3A
RG=10Ω,VGE=15V

V

= 15 V,Tj = 125°C

GE

16
30

400 A/µs

ns
ns

STGD3NB60KD

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

c

tr(V

off

td(

off

t

f

E

(**)

off

E

ts

t

c

t

r(Voff

td(

off

t

f

E

(**)

off

E

ts

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by max. junction temperature.

(**)Losses include Also the Tail (Jedec Standardization)

Cross-over Time

)

Off Voltage Rise Time 36 ns

)

Delay Time 53 ns
Fall Time 70 ns
Turn-off Switching Loss 33
Total Switching Loss 65
Cross-over Time

)

Off Voltage Rise Time 82 ns

)

Delay Time 58 ns
Fall Time 110 ns
Turn-off Switching Loss 88
Total Switching Loss 125

= 480 V, IC=3 A,

cc

=10Ω,VGE=15V

R

GE

V

= 480 V, IC=3A,

cc

RGE=10Ω,VGE=15V

Tj = 125 °C

90 ns

180 ns

µJ
µJ

µJ
µJ

COLLECTOR-EMITTER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

f

I

fm

V

f

t

rr

Q

rr

I

rrm

Forward Current
Forward Current pulsed

Forward On-Voltage If= 1.5 A

If= 1.5 A, Tj = 125 °C

= 1.5 A ,VR= 200 V,

Reverse Recovery Time
Reverse Recovery Charge

I

f

Tj = 125°C, di/dt = 100 A/µs

Reverse Recovery Current

1.6

1.3
90

100

2.7

1
8

2

Thermal Impedance

A
A

V
V

ns

nC

A

3/9

STGD3NB60KD

Output Characteristics

Transfer Characteristics

Collector-Emitter On Voltage vs Temp eratureTransconductance

Collector-Emitter On Voltage vs Collettor Cu rrent

4/9

Gate Threshold vs Temperature

STGD3NB60KD

Normalized Breakdown Voltage vs Temperature

Capacitance Variations

Total Switching Losses vs Gate ResistanceGate Charge vs Gate-Emitter Voltage

Total Switching Lo sses vs Temperature

Emitter-collector Diode Characteristics

5/9

STGD3NB60KD

Total Switching Losses vs Collector Cu rrent

Switching Off Safe Operating Area

6/9

STGD3NB60KD

Fig. 2: Test Circuit For Induct ive Load SwitchingFig. 1: Gate Charge test Circuit

7/9

STGD3NB60KD

TO-252 (DPAK) MECHANICAL DATA

DIM.

A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213

C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.252 0.260

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0

MIN. TYP. MAX. MIN. TYP. MAX.

o

mm inch

o

8

o

0

o

0

8/9

P032P_B

STGD3NB60KD

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consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.

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