Page 1
STGD3NB60H
N-CHANNEL 3A - 600V TO-252
PowerMESH IGBT
TYPE V
CES
V
CE(sat)
I
C
STGD3NB60H 600 V < 2.8 V 3 A
■ HIGHINPUT IMPEDANCE
(VOLTAGEDRIVEN)
■ LOW ON-VOLTAGEDROP (V
■ LOW GATECHARGE
■ HIGHCURRENTCAPABILITY
■ VERYHIGH FREQUENCYOPERATION
■ OFFLOSSES INCLUDETAIL CURRENT
■ SURFACE-MOUNTINGDPAK (TO-252)
cesat
)
POWERPACKAGE IN TAPE & REEL
(SUFFIX”T4”)
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH IGBTs, with outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequencyapplications(<120kHz).
APPLICATIONS
■ HIGHFREQUENCY MOTOR CONTROLS
■ SMPSAND PFC IN BOTH HARDSWITCH
AND RESONANTTOPOLOGIES
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Unit
V
V
V
I
CM
P
T
(•) Pulsewidth limited by safeoperating area
June 1999
Collect o r -Em i t t er Voltage (VGS= 0) 600 V
CES
Emit t er-Collect or Voltage 20 V
ECR
Gate-Emitter V oltage
GE
I
Collect o r Curr ent (continuous) at Tc=25oC6A
C
I
Collect o r Curr ent (continuous) at Tc= 100oC3A
C
20 V
±
(•) Collect o r Curr ent (pulsed) 24 A
Tot al Dissipat ion at Tc=25oC35W
tot
Derat ing Factor 0.28 W/
Sto rage Tem perature - 65 to 150
stg
T
Max. Operat ing Junc tion Tem per ature 150
j
o
C
o
C
o
C
1/8
Page 2
STGD3NB60H
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
3.57
100
1.5
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwise specified)
(T
j
OFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
BR(CES)
Collector-Emitter
IC=250µAVGE= 0 600 V
Break dow n Volt age
I
I
CES
GES
Collect o r cut - off
=0)
(V
GE
Gat e- Em i t t er Leakage
Current (V
CE
=0)
V
=MaxRating Tj=25oC
CE
=MaxRating Tj=125oC
V
CE
V
= ± 20 V VCE=0 ±100 nA
GE
10
100
ON(∗)
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
GE(th)
Gate Th reshold
VCE=VGEIC= 250 µ A35V
Voltage
V
CE(SAT)
Collector-Emitter
Sat urat ion Volt age
VGE=15V IC=3A
V
=15V IC=3A Tj=125oC
GE
2.4
1.9
2.8 V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
C
C
C
Q
Q
g
Q
I
CL
Forward
fs
Tr ansc on duc tance
Input Capacitanc e
ies
Out put Capacitance
oes
Reverse Transfer
res
Capacit a nc e
Tot al Gate Charge
G
Gate-Emitt er C harge
GE
Gat e- Col lect or C har ge
GC
Latc hing Curr ent V
VCE=25 V IC=3A 1.3 2.4 S
VCE=25V f=1MHz VGE= 0 160
23
4.5
VCE= 480 V IC=3A VGE=15V 21
235
33
6.6
300
43
8.6
27 nC
6
7.6
=480V RG=10Ω
clamp
T
= 150oC
j
12 A
µA
µ
V
pF
pF
pF
nC
nC
A
SWITCHINGON
Symbol Param et er Test Cond i t ions Mi n. Typ. Max. Uni t
(di/dt)
2/8
t
d(on)
E
Delay Time
t
Rise Time
r
Tur n-on Current Slope
on
Tur n-on Swit ching
on
Losses
VCC= 480 V IC=3A
=15V RG=10Ω
V
GE
VCC= 480 V IC=3A
=10Ω VGE=15V
R
G
T
= 125oC
j
16
30
400
37
ns
ns
A/µs
J
µ
Page 3
STGD3NB60H
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
tr(v
(off)
t
d
E
off
E
t
tr(v
(off)
t
d
E
off
E
(•) Pulse width limited by max. junction temperature
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
(**)Losses Include Also The Tail (Jedec Standardization)
Cross-Over Time
c
Off Voltage Rise Time
)
off
Delay Time
t
Fall T ime
f
(**)
Turn-off Switching Loss
Tot al Switching Loss
ts
Cross-Over Time
c
)
Off Voltage Rise Time
off
Delay Time
t
Fall T ime
f
(**)
Turn-off Switching Loss
Tot al Switching Loss
ts
VCC= 480 V IC=3A
R
GE
=10
Ω
VGE=15V
VCC= 480 V IC=3A
R
GE
= 125oC
T
j
=10
Ω
VGE=15V
90
36
53
70
33
65
180
82
58
110
88
125
ns
ns
ns
ns
µJ
µ
ns
ns
ns
ns
µ
µ
J
J
J
ThermalImpedance
3/8
Page 4
STGD3NB60H
OutputCharacteristics
Transconductance
TransferCharacteristics
Collector-EmitterOnVoltagevs Temperature
Collector-EmitterOnVoltagevs Collector Current
4/8
Gate Thresholdvs Temperature
Page 5
STGD3NB60H
NormalizedBreakdown Voltage vs Temperature
Gate Chargevs Gate-EmitterVoltage
CapacitanceVariations
TotalSwitchingLossesvs Gate Resistance
TotalSwitchingLossesvs Temperature
TotalSwitchingLossesvs Collector Current
5/8
Page 6
STGD3NB60H
SwitchingOff SafeOperatingArea
Fig. 1:
Fig. 3:
Gate Charge test Circuit
SwitchingWaveforms
Fig. 2:
TestCircuitFor Inductive LoadSwitching
6/8
Page 7
TO-252 (DPAK) MECHANICAL DATA
STGD3NB60H
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039
H
A
E
C2
L2
B2
==
==
DETAIL”A”
D
2
13
L4
A1
C
A2
DETAIL”A”
B
G
==
0068772-B
7/8
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STGD3NB60H
Information furnished is believedtobeaccurateand reliable.However, STMicroelectronics assumesno responsibility forthe consequences
of use of such information nor for any infringement of patents or other rights of third parties which may resultfrom its use. No license is
granted by implication orotherwise under any patent or patentrights of STMicroelectronics. Specificationmentioned in this publicationare
subjecttochange without notice.Thispublicationsupersedes andreplacesall information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devicesor systems without expresswritten approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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8/8
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