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STGB20NB32LZ
STGB20NB32LZ-1
N-CHANNEL CLAMPED 20A - D2PAK/I2PAK
INTERNALLY CLAMPED PowerMESH™ IGBT
TYPE V
STGB20NB32LZ
STGB20NB32LZ-1
■ POLYSILICON GATE VOLTAGE DRIVEN
■ LOW THRESHOLD VOLTAGE
■ LOW ON-VOLTAGE DROP
■ HIGH CURRENT CAPABILITY
■ HIGH VOLTAGE CLAMPING FEATURE
■ SURFACE-MOUNTING D²PAK (TO-263)
CES
CLAMPED
CLAMPED
V
CE(sat)
< 2.0 V
< 2.0 V
I
C
20 A
20 A
POWER PACKAGE IN TUBE (NO SUFFIX)OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
Using the lat es t high voltage t echnology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
™
IGBTs, with outstanding
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
gate-emitter zener supplies an ESD protection.
APPLICATIONS
■ AUTOMOTIVE IGNITION
3
D2PAK
1
I2PAK
2
1
INTERNAL SCHEMATIC DIAGRAM
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
Eas
P
tot
E
SD
T
stg
T
j
(•)Pulse width limited by safe operating area
Collector-Emitter Voltage (VGS=0)
CLAMPED V
Reverse Battery Protection 20 V
Gate-Emitter Voltage CLAMPED V
Collector Current (continuous) at Tc= 25°C
Collector Current (continuous) at Tc= 100°C
()
Collector Current (pulsed) 80 A
Single Pulse Energy T
= 25°C
c
Total Dissipation at Tc=25°C
40 A
30 A
700
150 W
Derating Factor 1 W/°C
ESD (Human Body Model) 4 KV
Storage Temperature –65 to 175 °C
Max. Operating Junction Temperature 175 °C
mJ
1/11December 2002
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STGB20NB32LZ - STGB20NB32LZ-1
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 0.2 °C/W
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS O THERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
BV
BV
(CES)
(ECR)
Clamped Voltage
Emitter Collector Break-down
=2mA,VGE= 0, Tc= - 40°C
C
IC=2mA,VGE= 0, Tc= 25°C
=2mA,VGE= 0, Tc= 150°C
I
C
=75mA,Tc=25°C 20 28
I
C
330 355 380 V
325 350 375 V
320 345 370 V
Voltage
BV
GE
Gate Emitter Break-down
IG=±2mA 121416
Voltage
I
CES
I
GES
R
GE
Collector cut-off Current
=0)
(V
GE
Gate-Emitter Leakage
Current (V
CE
=0)
Gate Emitter Resistance 10 15 25 KΩ
=15V,VGE=0 ,TC=150 °C
V
CE
VCE=200 V, VGE=0 ,TC=150°C
V
=±10V,VCE= 0 ± 400 ± 660 ± 1000
GE
10 µA
100 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(SAT)
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
V
CE=VGE,IC
VCE=VGE,IC= 250µA, Tc= 25°C
V
CE=VGE,IC
VGE=4.5V, IC=10A,Tc=25°C
=4.5V, IC= 10 A, Tc= 150°C
V
GE
=4.5V, IC=20A,Tc=25°C
V
GE
VGE=4.5V, IC= 20 A, Tc= 150°C
= 250µA, Tc=-40°C
= 250µA, Tc=150°C
1.2
1V
1.4 2
0.6 V
1.1 1.8 V
1 1.7 V
1.35 2 V
1.25 2 V
V
V
µA
V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
=25V,IC=20 A
CE
V
= 25 V, f = 1 MHz, VGE=0
CE
VGE=5V
35 S
2300 pF
28 pF
51 nC
2/11
g
fs
C
ies
C
oes
C
res
Q
g
Forward Transconductance
Input Capacitance
Output Capacitance 165 pF
Reverse Transfer
Capacitance
Gate Charge VCE= 280 V,IC=20A,
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STGB20NB32LZ - STG B 20NB32L Z-1
FUNCTIONAL CHARACTERISTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
II Latching Current V
U.I.S. Functional Test Open
Secondary Coil
=250V,TC= 150 °C
Clamp
=1KΩ,VGE= 4.5 V
R
GOFF
R
=1KΩ,L=3mH,Tc=25°C
GOFF
=1KΩ , L = 3mH ,Tc=150°C
R
GOFF
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
(di/dt)
Delay Time
r
Rise Time
Turn-on Current Slope VCC= 250 V,IC=20A
on
VCC=250V,IC=20A
R
=1KΩ,VGE= 4.5 V
G
=1KΩ,VGE= 4.5 V
R
G
Eon Turn-on Switching Losses VCC= 250 V,IC=20A,Tc=25°C
=1KΩ,VGE= 4.5 V,Tc=150°C
R
G
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
c
tr(V
off
t
f
t
(
d
off
(**)
E
off
t
c
t
r(Voff
t
f
t
d(off
E
(**)
off
(**)Losses Include Also the Tail (jedec Standardization)
Cross-Over Time
)
Off Voltage Rise Time 2.6 µs
Fall Time 2µs
)
Off Voltage Delay Time 11.5 µs
Turn-off Switching Loss 11.8 mJ
Cross-Over Time
)
Off Voltage Rise Time 3.5 µs
Fall Time 3.9 µs
)
Off Voltage Delay Time 12 µs
Turn-off Switching Loss 17.8 mJ
= 250 V,IC=20A,
cc
RGE=1KΩ,VGE= 4.5 V
V
= 250 V,IC=20A,
cc
R
=1KΩ,VGE= 4.5 V
GE
Tc = 150 °C
80 A
21.6
15
26
18
2.3
0.6
550 A/µs
8.8
9.2
4.8 µs
7.8 µs
A
A
µs
µs
mJ
mJ
Thermal Impedance
3/11
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STGB20NB32LZ - STGB20NB32LZ-1
Output Characteristics
Transfer Characteristics
TransconductanceNormalized Gate Threshold Voltage vs Temp.
Collector-Emitter On Voltage vs Te mpera ture
4/11
Capacitance Variations
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STGB20NB32LZ - STG B 20NB32L Z-1
Gate Charge vs Gate-Emitter Voltage
Break-Down Voltage vs Emitter Resistance
Normalized BreakDown Voltage vs Temperature
B
(Zener Gate-Emitter) vs Temperature
VGEO
Self Clamp ed Inductive Switching Energy vs
Open Secondary Coil
dV/dt Gate-Emitter Resistance
5/11
Page 6
STGB20NB32LZ - STGB20NB32LZ-1
B
Reverse Battery Voltage
VEC
6/11
Page 7
And Di ode Recovery Times
STGB20NB32LZ - STG B 20NB32L Z-1
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 4: Gate Charge test CircuitFig. 3: Test Circuit For Inductive Load Switching
7/11
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STGB20NB32LZ - STGB20NB32LZ-1
D2PAK MECHANICAL DATA
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
mm. inch
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0º 8º
3
8/11
1
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STGB20NB32LZ - STG B 20NB32L Z-1
P011P5/E
TO-262 (I2PAK) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
e 2.4 2.7 0.094 0.106
E 10 10.4 0.393 0.409
L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055
mm inch
C
A
A1
C2
B2
B
e
E
L1
L2
D
L
9/11
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STGB20NB32LZ - STGB20NB32LZ-1
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
REEL ME CHAN ICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3. 9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1. 9 2.1 0.075 0.082
R50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24. 3 0.933 0.956
* on sales type
10/11
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
1000 1000
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STGB20NB32LZ - STG B 20NB32L Z-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility f or the
consequences of use of su ch in formation nor for any in fringement of patents or other rights of third parties w hich may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously suppli ed. STMi croelect ronics pr oducts are not author ized for use as cr itical component s in li fe suppo rt devi ces or
systems without express written approval of STMicroelectronics.
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© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
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11/11
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