Datasheet SA910 Datasheet (Philips)

INTEGRATED CIRCUITS

SA910

Variable gain RF predriver amplifier

Product specification 1997 Aug 12

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Philips Semiconductors Product specification

SA910Variable gain RF predriver amplifier

DESCRIPTION

The SA910 is a variable gain predriver amplifier designed for handheld analog cellular telephones. When used with a UHF power transistor, it forms a cost-ef fective, low-profile, surface mount power amplifier solution (1.2W maximum PAE > 50%). The SA910 integrates power detection and control circuitry that is stabilized over temperature and voltage. In power down mode, the SA910 draws less than 10µA of current. The SA910 is fabricated using Philips QUBiC BiCMOS process.

FEATURES

•MMIC BiCMOS predriver amplifier

•Low voltage 2.7 to 5.5V single supply operation

•820 to 905MHz bandwidth

•High power gain >20dB

•High power output >23dBm (typical) @ 3V

•Efficiency = 35% (typical)

•Wide gain control range: >32dB

•Few external components required

•Integrated power detector and comparison gain control circuitry

•50Ω input, open-collector output

•SSOP-20 package

•Integrated regulator with offset adjustment for biasing an external

output stage

PIN CONFIGURATION

V V

OUTLPF

V

BIAS

CC

CC1

REF

GND RF

GND GND

GND

1 2 3 4

IN

5 6 7 8 9

V

C

10

20 19 18 17 16 15 14 13 12 11

P

SENSE

BIAS

OUT

GND RF

OUT1

GND GND

RF

OUT2

GND PWRUP

OFFSET

SR01067

APPLICATIONS

•900MHz analog cellular

•Handheld transmitting equipment in the 820 to 905MHz frequency

range

•Cordless phone

1997 Aug 12 853–2021 18269

2

Philips Semiconductors Product specification

SA910Variable gain RF predriver amplifier

C1 10NF

GND

OUT1 GND

GND

OUT2

GND

20

19

18

17

16

15

14

13

12

11

ADJUST

BIAS

L1 33nH

POWER

UP

L3

1.8nH

C5 33pF

C4

8.2PF

C8 33pF

C7 33PF

3.3nH

L2

BIAS OUT

2

V

CC

+3.6V

W = 55MILS L = 180MILS H = 62MILS FR–4

2

V

CC

+3.6V

C9

0.5PF

C6

5.6PF

RF OUT 50

VCC1 +3V

RF

VCC1 +3V

Vref

IN

VC

C3 100NF

C2 10NF

R1 1K

1

2

3

4 5

6

7 8

9

10

V

CC1

V

REF

GND

RF

IN

GND

OUT LPF

GND V

C

V BIAS

CC

P SENSE

BIAS OUT

RF

SA910

RF

PWR UP OFFSET

Figure 1. Application Diagram

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

20-Pin Plastic SSOP (Shrink Small Outline Package) -40 to +85°C SA910

SR01535

SOT266-1

1997 Aug 12

3

Philips Semiconductors Product specification

SA910Variable gain RF predriver amplifier

Notes: All caps are MMC 0603, Inductors: Toko LL2012

1997 Aug 12

SR01547

Figure 2. Application Board Layout of SA910

4

Philips Semiconductors Product specification

SA910Variable gain RF predriver amplifier

130

L3 1.8nH

L1 33nH

C15

0.001uF

C21

0.1uF

C20

0.001uF

L4 3.9nH

L2 5.6nH

C24

0.001uF

C26

0.001uF

C25

0.1uF

C6 3.3pF

VCC2

ATTENUATOR/

SPLITTER

RFout

VPWRUP

VCC1

VREF

VCC1

C23

C28

0.001uF

0.1uF C27

0.001uF

R15 1K

RFin

VC

C13 0. 1000pf

C14

0.1uF

0 OHM RESI

4.7 uF

VREF

OUTLPF

RFIN

GND

VCCBIAS

VC

SA910

ON–CHIP

BIAS

EXTERNAL

AMP BIAS

PSENSE

RFOUT1

GND

RFOUT2

BIASOUT

OFFSET

PWRUP

R19 10K

0 OHM RES

R17 10K C24

0.001uF

C7 6.8pF

BLOCK DIAGRAM

OUTLPF

V

CC

V

CC

V

REF

RF

BIAS

GND

V

TO PSENSE

R9 18

R3 68 R8 16.9

R4

100

R5 100

R10 18

ATTENUATOR/SPLITTER NETWORK

RFOUT

SR01548

Figure 3. Test Circuit Used In Characterizing SA910

1

EXTERNAL

AMP BIAS

A2A1

IN

ON-CHIP

C

BIAS

P

SENSE

RF

OUT

RF

OUT

GND

BIAS

OFFSET

PWRUP

1

2

OUT

SR01068

Figure 4. Block Diagram

1997 Aug 12

5

Philips Semiconductors Product specification

SA910Variable gain RF predriver amplifier

PIN DESCRIPTIONS

Pin No.

1 V 2 V

Mnemonic Function

CC1 REF

Power supply for power sense loop and off-chip bias

Power sense reference voltage input 3 GND Ground 4 RF

IN

Pre-driver input 5 GND Ground 6 GND Ground 7 OUTLPF Power sense detected output 8 GND Ground 9 VC Gain control input

10 VCC BIAS Power supply for on-chip bias 11 OFFSET External power amp bias offset adjustment 12 PWRUP Power-up input 13 GND Ground 14 RF

OUT2

Pre-driver output (open collector)

15 GND Ground 16 GND Ground 17 RF

OUT1

Output of first stage (open collector)

18 GND Ground 19 BIAS 20 P

SENSE

OUT

Output to bias external power amplifier stage

Power sense input

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNITS

VCC1/VCCBIAS DC supply voltages -0.3 to +6.0 V

1

-0.3 to (VCC1 + 0.3) V

P

T

P

DET

P

STG

Voltage applied to any other pin

D

IN

Power dissipation 1.0 W Input drive power 5 mW Input detect power 20 mW

L

Load power 500 mW Storage temperature range -65 to +150

NOTE:

1. Except RF

OUT

1 and RF

2 which can have 8V max.

OUT

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER RATING UNITS

VCC1/VCCBIAS Supply voltage 3 to 3.6 V

NOTE:

1. R

T

A

= 75° c/w

th

Operating ambient temperature range -40 to +85

°C

1997 Aug 12

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Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

PLLoad power at RF

Saturated

1

21.524dBm

SA910Variable gain RF predriver amplifier

AC ELECTRICAL CHARACTERISTICS

VCC1 = VCCBIAS = +3V;VCC(RF stated.

f

Frequency range 820 830 905 MHz

RF

p

S

Small signal gain RFin = –20dBm 31 dB

21

η Power added efficiency PL = 24dBm 35 %

S

G

S

GOFF

Input return loss

11

Gain control range from V

C

Reverse isolation -40 dB

12

Gain at RF (RFIN = -20dBm)

OUT2

PSENSE Power detector range 25 dB

NOTE:

1. Needs proper output matching.

OUT

OUT2

1, RF

2) = 3.6V; TA = 25°C, ZS = ZL = 50Ω; VC = 2V; RFIN = 0dBm @ 830MHz; unless otherwise

OUT

= 0.7 to 2V dP/dV <120dB/V 32 dB

c

during power-down

RFin = 0dBm

LIMITS

MIN TYP MAX

–12 dB

-30 dB

1997 Aug 12

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Philips Semiconductors Product specification

SYMBOL

PARAMETER

UNITS

IPUInput current to PWRUP

A

VPUInput level for PWRUP (Pin 12)

SA910Variable gain RF predriver amplifier

DC ELECTRICAL CHARACTERISTICS

VCC1 = VCCBIAS = +3V, VCC (RF

V

I

OFF

Power supply voltage range 2.7 3.0 5.5 V

CC

Total DC current from all V

CC

ICC under zero bias mode

ZB

Powerdown current Pin 12 = LOW 10 µA

p

V

I

REF

BIAS

V

Input current to V Power control reference voltage (Pin 1) 0 2.0 V

REF

Bias

voltage (Pin 19) (unadjusted) VC = 2.0V 0.68 V

OUT

DC current available @ Bias-OUT (Pin 19) 30 mA Control voltage (Pin 9) range 0 2 V

C

OUT

1, RF

2) = 3.6V; TA = 25°C, ZS = ZL = 50Ω, ; unless otherwise stated.

OUT

TEST

CC

CONDITIONS

Pin 12 = HIGH;

Pin 9 > V

BE

MIN -3σ TYP +3σ MAX

Pin 12 = HIGH;

Pin 9 < V

BE

LIMITS

210 300 mA

0.7 mA

Pin 12 = HIGH 100

Pin 12 = LOW 10 Pin 12 = LOW 0 0.3V

Pin 12 = HIGH 0.7V

(Pin 2) 1 µA

REF

CC

V

CC

µ

V V

1997 Aug 12

8

Philips Semiconductors Product specification

SA910Variable gain RF predriver amplifier

, V

dBm

1 = 3.0V

V

T = 25C, input Freq = 830 MHz

30

25

20

15

10

–8

–6

–4

–2

–20

–18

–16

–14

–12

dBm

–10

V = 3.0V, VC = 2.0V

CC

V = 5.5V, VC = 1.7V

CC

V = 2.7V, VC = 2.5V

CC

–0

SR01521

50

40

30

%

20

10

0

–20

CC

V = 2.0V

C

–16 –12 –8 –4

–18 –14 –10 –6 –2

Figure 8. PAE VS Input Power

Figure 5. Output Power VS Input Power

2 = 3.6V, INPUT FREQ = 830 MHZ

CC

dBm

T = 27C T = 85C T = –40C

0

SR01524

T = 25C, Pin = 0dBm

30

25

20

dBm

15

10

820

830

840

850

860

870

880

MHz

890

VCC = 3.0 V, VC = 2.0 V

VCC = 5.5 V, VC = 1.7 V

VCC = 2.7 V, VC = 2.5 V

Figure 6. Output Power VS Input Frequency

1 = 3.0V, V

V

CC

30

25

20

dBm

15

10

820 830 840 850 860 870 880 890 900

2 = 3.6V, Pin = 0dBm

CC

VC = 2.0V

MHz

T = 27C T = 85C T = –40C

Figure 7. Output Power VS Input Frequency

900

SR01522

SR01523

VCC1 = 3.0V

40 36 32

db

28 24 20

–20 –18 –16 –14 –12 –10 –8 –6 –4 –2 0

, V

2 = 3.6V, INPUT FREQ = 830 MHZ

CC

dbm

VC = 2.0V

T = 27C T = 85C T = –40C

Figure 9. Signal Gain VS Input Power

VCC1 = 3.0V

40

35

30

db

25

20

820 830 840 850 860 870

, V

2 = 3.6V, Pin = –20 dBm

CC

MHz

880

T = 27C T = 85C T = –40C

Figure 10. Signal Gain VS Input Frequency

SR01525

VC = 2.0V

890 900

SR01526

1997 Aug 12

9

Philips Semiconductors Product specification

SA910Variable gain RF predriver amplifier

40 35 30

dB

25 20

–20 –18 –16 –14 –12 –10 –8 –6 –4 –2 0

T = 25C, Input Freq = 830 MHz, Pin = –20dBm

dBm

V =3.0V, VC = 2.0V

CC

V =5.5V, VC = 1.7V

CC

V =2.7V, VC = 2.5V

CC

Figure 11. Signal Gain VS Input Power

T = 25C, Pin = –20 dBm

40

35

dB

30

25

20

820

830

840

850

860

870

880

MHz

V =3.0V, VC = 2.0V

CC

V =5.5V, VC = 1.7V

CC

V =2.7V, VC = 2.5V

CC

Figure 12. Signal Gain VS Input Frequency

1 = 3.0V, VCC2 = 3.6V, INPUT FREQ = 830 MHZ

V

CC

30

V =2.0V

C

25

20

dBm

15

10

–20

–16

–12

–8

dBm

–4

Figure 13. Output Power VS Input Power

VCC1 = 3.0V, VCC2 = 3.6V, PIN = 0dBm

30 20 10

0

dBm

–10 –20 –30 –40

0.5

SR01527a

INPUT FREQ = 830 MHz

0.7

0.9

1.1 Volts

1.3

1.5

1.7

T = 27C

T = 27C T = 85C

T = 85C T = –40C

T = –40C

SR01530

2.0

Figure 14. Output Power VS VC

V

1 = 3.0V, VCC2 = 3.6V, Pin = 0 dBm

CC

INPUT FREQ = 830MHz

1

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

VOLTS

T = 27C

T = 85C T = –40C

1.9

SR01531

2

890

900

SR01528

30

25

20

dBm

15

10

0.8

0.9

Figure 15. Output Power VS VREF (Closed Loop)

30

25

20

dBm

T = 27C

T = 85C T = –40C

0

SR01529

15

10

0.8

Figure 16. Output Power VS VREF (Closed Loop)

T = 27C, INPUT FREQ = 830 MHz, PIN = 0 dBm

1

0.9

1.1

1.2

1.3 VOLTS

1.4

1.5

1.6

VCC = 3.0V VCC = 5.5V

VCC = 2.7V

1.7

1.8

1.9

SR01537

2

1997 Aug 12

10

Philips Semiconductors Product specification

SA910Variable gain RF predriver amplifier

40 35 30 25 20

%

15 10

5

–20

T = 25°C, Input Freq = 830 MHz

–16

–18

–12

–8 –4

dBm

VCC = 3.0 V, VC = 2.0 V VCC = 5.5 V, VC = 1.7 V VCC = 2.7 V, VC = 2.5 V

dB

–10 –20 –30 –40

–200–6–10–14

SR01532

VCC1 = 3.0V, VCC2 = 3.6V, T = 25°C

40 30 20 10

0

0.5

0.7

PIN = –20dBm@830 MHz

0.9

1.3

1.5

1.1 VC (VOLTS)

1.7

1.9

Figure 19. Small Signal Gain VS V

2.1

2.3

SR01534

2.5

C

Figure 17. PAE VS Input Power

POWER DISSIPATION (WATTS)1W

°C

(135 – T )

P =

D

A

75°C/W

0W

AMBIENT OPERATING TEMPERATURE

Figure 18. Power De–Rating Curve

135°C60°C

SR01533

1997 Aug 12

11

Philips Semiconductors Product specification

SA910Variable gain RF predriver amplifier

SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1

1997 Aug 12

12

Philips Semiconductors Product specification

SA910Variable gain RF predriver amplifier

Data sheet status

Objective specification

Preliminary specification

Product specification

Product status

Development

Qualification

Production

Definition

This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice.

This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make chages at any time without notice in order to improve design and supply the best possible product.

This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.

[1]

[1] Please consult the most recently issued datasheet before initiating or completing a design.

Definitions

Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Disclaimers

Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can

reasonably be expected to result in personal injury . Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088–3409 Telephone 800-234-7381

 Copyright Philips Electronics North America Corporation 1998

print code Date of release: 05-96 Document order number: 9397 750 03884

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1997 Aug 12

13

Datasheet SA910 Datasheet (Philips)

Specifications and Main Features

Frequently Asked Questions

User Manual