Datasheet MCH6616 Datasheet (SANYO)

Page 1
Ordering number : ENN7013
MCH6616
N-Channel Silicon MOSFET
MCH6616
Ultrahigh-Speed Switching Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Composite type with 2 MOSFETs contained in a single
Package Dimensions
unit : mm
2173A
[MCH6616]
0.3
546
1
0.07
2.0
2.1
0.250.25
1.6
32
0.65
0.15
654
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1
Specifications
0.85
123
SANYO : MCPH6
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V Gate-to-Source Voltage V Drain Current (DC) I Drain Current (Pulse) I Allowable Power Dissipation P Channel T emperature T ch 150 ° C Storage T emperature Tstg --55 to +150 °C
DSS GSS
D
DP
D
PW10µs, duty cycle1% 6.4 A Mounted on a ceramic board (900mm2✕0.8mm)1unit
20 V
±10 V
1.6 A
0.8 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Gate-to-Source Leakage Current I Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS GSS
yfs
RDS(on)1 ID=0.8A, VGS=4V 180 230 m RDS(on)2 ID=0.4A, VGS=2.5V 220 310 m RDS(on)3 ID=0.1A, VGS=1.8V 300 450 m
=1mA, VGS=0 20 V VDS=20V , VGS=0 1 µA VGS=±8V, VDS=0 ±10 µA
VDS=10V, ID=0.8A 1.6 2.4 S
Marking : FQ Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71801 TS IM TA-3262
No.7013-1/4
Page 2
MCH6616
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=10V , f=1MHz 105 pF Output Capacitance Coss VDS=10V , f=1MHz 23 pF Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 15 pF Turn-ON Delay Time td(on) See specified Test Circuit 6 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit 19 ns Fall Time t Total Gate Charge Qg VDS=10V, VGS=4V, ID=1.6A 1.4 nC Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=1.6A 0.3 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=1.6A 0.3 nC Diode Forward Voltage V
SD
See specified Test Circuit 16 ns
r
See specified Test Circuit 8 ns
f
IS=1.6A, VGS=0 0.92 1.2 V
Switching Time Test Circuit Electrical Connection
V 4V 0V
PW=10µs D.C.1%
IN
V
IN
VDD=10V
D1 G2 S2
ID=800mA RL=12.5
D
G
V
OUT
S1 D2G1
Ratings
min typ max
Unit
P.G
2.0
1.6
-- A D
1.2
6.0V
0.8
10.0V
Drain Current, I
0.4
0
0
400
350
ID=0.4A
300
(on) -- m
250
DS
200
150
50
I
-- V
D
3.0V
4.0V
0.2
2.5V
1.8V
0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9
Drain-to-Source V oltage, V
RDS(on) -- V
0.8A
1.5V
DS
S
DS
GS
MCH6616
V
=1.0V
GS
-- V
Ta=25°C
IT02916
I
-- V
2.0
VDS=10V
1.8
1.6
1.4
-- A D
1.2
1.0
0.8
0.6
Drain Current, I
0.4
0.2 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
D
Gate-to-Source V oltage, V
RDS(on) -- Ta
=0.4A, V
I
D
=0.8A, V
I
D
(on) -- m
DS
400
350
300
250
200
150
Ta=75°C
GS
GS
25°C
=2.5V
GS
--25°C
GS
=4.0V
Ta= --25°C
-- V
75°C
25°C
IT02917
100
50
Static Drain-to-Source
On-State Resistance, R
0
0246810
Gate-to-Source V oltage, V
GS
-- V
IT03305
100
50
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03306
No.7013-2/4
Page 3
10
7 5
3 2
1.0 7 5
3 2
0.1 7 5
3 2
Forward Transfer Admittance, yfs -- S
0.01 23 57
0.001 0.01
100
VDD=10V
7
VGS=4V
5
3 2
y
fs -- I
25°C
75°C
Ta= --25°C
23 57
Drain Current, I
SW Time -- I
t
(off)
d
D
23 57 23 5
0.1
D
1.0
-- A
D
r
t
VDS=10V
IT02920
MCH6616
I
-- V
F
25°C
--25°C
SD
SD
-- V
DS
10
7 5
3 2
-- A
1.0
F
7 5
3 2
0.1 7
Forward Current, I
5 3
2
0.01
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Ta=75°C
Diode Forward V oltage, V
1000
7 5
3 2
Ciss, Coss, Crss -- V
VGS=0
IT02921
f=1MHz
10
7 5
3
Switching Time, SW Time -- ns
2
1.0
0.1 1.0
4.0
t
f
td(on)
23 57 23 5
Drain Current, I
D
-- A
VGS -- Qg
VDS=10V ID=1.6A
3.5
-- V
3.0
GS
2.5
2.0
1.5
1.0
Gate-to-Source V oltage, V
0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Total Gate Charge, Qg -- nC
P
-- Ta
1.0
D
IT02922
IT03307
A S O
1.0
Ciss
Coss
Crss
DS
10ms
100ms
DC operation
23 5723 57
DS
-- V
<10µs
100µs
1ms
100.1
-- V
100
7 5
Ciss, Coss, Crss -- pF
3 2
10
02468101214161820
Drain-to-Source V oltage, V
10
I
=6.4A
DP
7 5
3
I
=1.6A
2
D
1.0
-- A
7
D
5 3
2
Operation in this
0.1
area is limited by RDS(on).
7
Drain Current, I
5 3
Ta=25°C
2
Single pulse Mounted on a ceramic board(900mm2✕0.8mm)1unit
0.01
Drain-to-Source V oltage, V
IT02923
23
IT03308
-- W
0.8
D
0.6
0.4
0.2
Allowable Power Dissipation, P
0020 40
Mounted on a ceramic board(900mm
2
0.8mm)1unit
60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03309
No.7013-3/4
Page 4
MCH6616
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of July, 2001. Specifications and information herein are subject to change without notice.
No.7013-4/4
PS
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