Page 1
Ordering number : ENN6684A
MCH6702
DC/DC Converter Applications
PNP Epitaxial Planar Silicon Transistor
Schottky Barrier Diode
MCH6702
Features
•
Composite type with a PNP transistor and
a Schottky barrier diode contained in one
package facilitatiing high-density mounting.
•
The MCH6702 consists of two chips which
are equivaient to the MCH6101 and SBS006,
respectively.
•
The ultrasmall package facilitates
Package Dimensions
unit : mm
2191A
0.250.25
2.1
1.6
0.3
546
[MCH6702]
0.15
miniaturization in end products. (mounting
1
height 0.85mm).
32
0.65
2.0
(Bottom view)
0.07
0.85
654
123
(Top view)
1 : Base
2 : Emitter
3 : Anode
4 : Common(Collector/Cathode)
5 : Common(Collector/Cathode)
6 : Common(Collector/Cathode)
SANYO : MCPH6
Specifications
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
[TR]
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Junction T emperature Tj 150 ° C
Storage T emperature T stg --55 to +125 °C
[SBD]
Repetitive Peak Reverse Voltage V
Non-repetitive Peak Reverse Surge Voltage V
Average Output Current I
Surge Current I
Junction T emperature Tj --55 to +125 °C
Storage T emperature T stg --55 to +125 °C
Marking : PB
CBO
CEO
EBO
C
CP
B
C
RRM
RSM
O
FSM
Mounted on a ceramic board(600mm2✕0.8mm) 1.0 W
50Hz sine wave, 1 cycle 10 A
--15 V
--15 V
--5 V
--1.5 A
--3 A
--300 mA
30 V
30 V
0.7 A
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
20502 TS IM / O1000 TS IM TA-3025
No.6684-1/4
Page 2
Electrical Characteristics at T a=25 °C
MCH6702
Parameter Symbol Conditions
[TR]
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
Output Capacitance Cob VCB=--10V, f=1MHz 17 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=--750mA, IB=--15mA ---120 ---180 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=--750mA, IB=--15mA ---0.85 ---1.2 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-ON Time t
Storage Time t
Fall Time t
[Di]
Reverse Voltage V
Forward Voltage VF2I
Reverse Current I
Interterminal Capacitance C VR=10V, f=1MHz 20 pF
Reverse Recovery Time t
CBO
EBO
FE
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
on
stg
VF1I
VF3I
VCB=--12V, IE=0 --0.1 µA
VEB=--4V, IC=0 ---0.1 µA
VCE=--2V, IC=--100mA 200 560
VCE=--2V, IC=--300mA 350 MHz
T
=--10µA, IE=0 ---15 V
=--1mA, RBE=∞ ---15 V
=--10µA, IC=0 ---5 V
See specified Test Circuit 50 ns
See specified Test Circuit 90 ns
See specified Test Circuit 15 ns
f
IR=0.5mA 30 V
R
R
rr
=0.3A 0.35 0.40 V
F
=0.5A 0.42 0.47 V
F
=0.7A 0.5 0.55 V
F
VR=10V 200 µA
IF=IR=100mA, See specified Test Circuit 10 ns
Rathings
min typ max
Electrical Connection
Unit
45
123
6
Switching Time Test Circuit trr Specified Circuit
[TR] [Di]
I
PW=20µs
D.C.≤1%
INPUT
V
R
50Ω
IC= --20IB1=20IB2= --750mA
B2
I
B1
R
B
+
220µF 470µF
+
VCC= --5VVBE=5V
OUTPUT
R
L
Duty≤10%
50Ω 100Ω 10Ω
10µs
--5V
100mA100mA
10mA
t
rr
No.6684-2/4
Page 3
I
-- V
--1.0
--0.9
--0.8
-- A
--0.7
C
--0.6
--0.5
--0.4
--0.3
Collector Current, I
--0.2
--0.1
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2
C
Base-to-Emitter V oltage, V
1000
7
5
3
-- MHz
T
2
BE
25°C
--25°C
Ta=75°C
-- V
f
-- I
T
BE
C
MCH6702
h
[TR] [TR]
VCE= --2V
IT01661
[TR] [TR]
VCE= --2V
1000
7
5
3
2
FE
100
7
5
3
2
10
7
DC Current Gain, h
5
3
2
1.0
100
23 57 23 57 23 5
--0.01
7
5
3
2
--0.1 --1.0
Collector Current, I
-- I
FE
Ta=75°C
--25°C
Cob -- V
C
CB
25°C
C
-- A
VCE= --2V
IT01662
f=1MHz
100
7
5
3
2
Gain-Bandwidth Product, f
10
2 3 57 2 3 57 2 3
--0.01 --0.1 --1.0
Collector Current, I
--1000
(sat) -- V
7
5
3
2
VCE(sat) -- I
CE
--100
7
5
3
2
Collector-to-Emitter
Saturation V oltage, V
--10
7
23 57 23 57 23
--0.01 --0.1 --1.0
--25°C
Collector Current, I
--10
7
5
3
(sat) -- V
2
BE
--1.0
7
5
3
Base-to-Emitter
Saturation V oltage, V
2
--0.1
23 57 23 57 23
--0.01 --0.1 --1.0
VBE(sat) -- I
Ta= --25°C
25°C
Collector Current, I
-- A
C
C
Ta=75°C
25°C
-- A
C
C
75°C
-- A
C
10
7
5
3
Output Capacitance, Cob -- pF
2
1.0
IT01663
[TR] [TR]
I
/ IB=20
C
--1.0 --10
--1000
7
5
3
2
(sat) -- V
23 57 23
Collector-to-Base Voltage, V
VCE(sat) -- I
CB
C
CE
--100
7
IT01665
IC / IB=50
IT01667
5
3
2
Collector-to-Emitter
Saturation V oltage, V
--10
7
2 3 57 2 3 57 2 3
--0.01 --0.1 --1.0
--10
7
5
ICP= --3A
3
2
IC= --1.5A
-- A
--1.0
C
7
5
3
2
--0.1
7
5
Collector Current, I
Ta=25°C
3
Single pulse
2
Mounted on a ceramic board(600mm2✕0.8mm)
--0.01
--0.1 --1.0 --10
Collector Current, I
23 57 23 57 23
Collector-to-Emitter Voltage, V
Ta=75°C
--25°C
A S O
100ms
DC operation
C
10ms
25°C
-- A
1ms
CE
-- V
I
/ IB=50
C
100µ
500µs
-- V
No.6684-3/4
IT01664
IT01666
[TR][TR]
s
IT02478
Page 4
1.4
MCH6702
P
-- Ta
C
[TR]
I
-- V
F
2
F
[SBD]
1.2
-- W
1.0
C
0.8
0.6
0.4
Collector Dissipation, P
0.2
0
0 20 40 60 80 100 120 140 160
Mounted on a ceramic board(600mm
2
Ambient Temperature, Ta -- °C
I
-- V
R
100
7
5
3
2
10
7
Ta=125°C
5
-- mA
3
R
2
1.0
7
5
3
2
0.1
Reverse Current, I
7
5
3
2
0.01
0 5 10 15 20 25 30
100°C
75°C
50°C
25°C
R
Reverse Voltage, VR -- V
1.0
7
5
-- A
3
F
2
0.1
7
5
Forward Current, I
✕0.8mm)
IT01669
[SBD]
3
2
0.01
0 0.2 0.4 0.6 0.8
0.7
qRectangular wave θ=60°
-- W
wRectangular wave θ=120°
0.6
(AV)
eRectangular wave θ=180°
F
rSine wave θ=180°
0.5
Rectangular wave
0.4
0.3
0.2
0.1
0
Average Forward Power Dissipation, P
IT01671 IT01672
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
100°C
Ta=125°C
25°C
50°C
75°C
Forward Voltage, V
PF(AV) -- I
θ
360°
Average Rectified Current, I
-- V
F
O
w
q
Sine wave
O
r
-- A
IT01670
[SBD]
e
180°
360°
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2002. Specifications and information herein are subject
to change without notice.
No.6684-4/4
PS
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