Datasheet MCH3409 Datasheet (SANYO)

Ordering number : ENN6911

Preliminary

MCH3409

N-Channel Silicon MOSFET

MCH3409

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 8.0 A
Mounted on a ceramic board (900mm2✕0.8mm) 0.9 W

Package Dimensions

unit : mm

2167

[MCH3409]

0.3

3

12

0.65

2.0

0.250.25

1.6

0.15

2.1

0.85

0.15

1 : Gate
2 : Source
3 : Drain

SANYO : MCPH3

20 V

±10 V

2.0 A

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=1A, VGS=4V 100 130 mΩ
RDS(on)2 ID=0.5A, VGS=2.5V 130 180 mΩ

=1mA, VGS=0 20 V
VDS=20V , VGS=0 1 µA
VGS=±8V, VDS=0 ±10 µA

VDS=10V, ID=1A 2.4 3.5 S

min typ max

Marking : KJ Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

11801 TS IM TA-3049

No.6911-1/4

MCH3409

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V , f=1MHz 190 pF
Output Capacitance Coss VDS=10V , f=1MHz 40 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 25 pF
Turn-ON Delay Time td(on) See specified Test Circuit 9 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 25 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=4V, ID=2.0A 2.7 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=2.0A 0.6 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=2.0A 0.6 nC
Diode Forward Voltage V

SD

See specified Test Circuit 25 ns

r

See specified Test Circuit 18 ns

f

IS=2.0A, VGS=0 0.87 1.2 V

min typ max

Switching Time Test Circuit

VDD=10V

V

IN
4V
0V

PW=10µs
D.C.≤1%

V

IN

G

ID=1A
RL=10Ω

D

V

OUT

Ratings

Unit

2.0

1.8

3.0V

1.6

4.0V

1.4

-- A
D

1.2

6.0V

1.0

0.8

0.6

Drain Current, I

0.4

0.2
0

0

300

P.G

I

50Ω

D

-- V

2.0V

2.5V

0.2

0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9

Drain-to-Source V oltage, V

RDS(on) -- V

DS

DS

GS

S

V

GS

-- V

MCH3409

=1.5V

Ta=25°C

IT02720

I

-- V

-- A

3.0

VDS=10V

2.5

2.0

D

GS

D

1.5

1.0

Drain Current, I

0.5

Ta=75°C

0

0 0.4 0.8 1.2 1.6 2.0

Gate-to-Source V oltage, V

250

RDS(on) -- Ta

--25°C

GS

25°C

-- V

IT02721

250

200

(on) -- mΩ

DS

150

ID=0.5A

100

50

Static Drain-to-Source

On-State Resistance, R

0

0123456

1.0A

Gate-to-Source V oltage, V

78910

IT02722

-- V

GS

200

(on) -- mΩ

DS

150

=0.5A, V

I

D

=1.0A, V

I

100

50

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 140 160

D

GS

=2.5V

GS

=4.0V

Ambient Temperature, Ta -- °C

IT02723

No.6911-2/4

MCH3409

fs -- S

y

Forward Transfer Admittance, 

Switching Time, SW Time -- ns

100

1.0

10

7
5

3

2

7
5

3
2

0.01

7
5

3
2

10

7
5

3
2

VDS=10V

VDD=10V
VGS=4V

yfs -- I

Ta= --25°C

75°C

23 5723 57 23 5

0.1 1.0

Drain Current, I

SW Time -- I

t

(off)

d

t

f

t

r

25°C

td(on)

D

I

Ta=75°C

F

25°C

-- V

--25°C

Ciss

Coss

Crss

SD

SD

-- V

VGS=0

IT02725

DS

f=1MHz

D

-- A

IT02724

D

10

7
5

3
2

-- A

1.0

F

7
5

3
2

0.1
7

Forward Current, I

5
3

2

0.01
0 0.2 0.4 0.6 0.8 1.0 1.41.2

Diode Forward V oltage, V

Ciss, Coss, Crss -- V

Ciss, Coss, Crss -- pF

1000

7
5

3
2

100

7
5

3
2

1.0

0.1

4

V

=10V

DS

ID=2A

-- V

3

GS

2

1

Gate-to-Source V oltage, V

0

0

1.2

1.0

-- W
D

0.9

0.8

23 57

Drain Current, I

1.0

D

-- A

VGS -- Qg

Total Gate Charge, Qg -- nC

P

-- Ta

D

Mounted on a ceramic board(900mm

23 5

IT02726

312

IT02728

10

0

5

Drain-to-Source V oltage, V

10

7

I

=8A

DP

5
3

ID=2A

2

1.0

-- A

7

D

5
3

2

Operation in this
area is limited by RDS(on).

0.1
7

Drain Current, I

5
3

Ta=25°C

2

Single pulse
Mounted on a ceramic board(900mm

0.01

0.1

1.0 10

Drain-to-Source V oltage, V

10

IT02727

-- V

DS

A S O

<10µs

100µs

1ms

10ms

100ms

DC operation

2

23 5723 57 23 5

✕0.8mm)

-- V

DS

IT02729

2015

0.6

0.4

0.2

Allowable Power Dissipation, P

0020 40

2

✕0.8mm)

60

80 100 120

Ambient Temperature, Ta -- °C

140 160

IT02730

No.6911-3/4

MCH3409

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of January, 2001. Specifications and information herein are subject
to change without notice.

No.6911-4/4

PS