Datasheet MCH6615 Datasheet (SANYO)

Ordering number : ENN6796

MCH6615

N-Channel and P-Channel Silicon MOSFETs

MCH6615

Ultrahigh-Speed Switching Applications

Features

•

The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting.

• Low ON-resistance.

• 2.5V drive.

Package Dimensions

unit : mm

2173

[MCH6615]

0.3

5

64

2

13

0.65

2.0

0.250.25

1.6

0.15

2.1

1 : Source1 2 : Gate1 3 : Drain2 4 : Source2

0.85

0.15

5 : Gate2 6 : Drain1

SANYO : MCPH6

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage V Gate-to-Source Voltage V Drain Current (DC) I Drain Current (Pulse) I Allowable Power Dissipation P Channel T emperature T ch 150 °C Storage T emperature Tstg --55 to +150 °C

DSS GSS

D

PW≤10µs, duty cycle≤1% 2.6 --1.6 A

DP

Mounted on a ceramic board (900mm

D

2

✕0.8mm)1unit

30 --30 V

±10 ±10 V

0.65 --0.4 A

0.8 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions [N-channel]

Drain-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Gate-to-Source Leakage Current I Cutoff Voltage VGS(off) VDS=10V, ID=100µA 0.4 1.3 V Forward Transfer Admittance

Static Drain-to-Source On-State Resistance RDS(on)2 ID=80mA, VGS=2.5V 1.2 1.7 Ω

(BR)DSSID

DSS GSS

yfs



RDS(on)1 ID=150mA, VGS=4V 0.9 1.2 Ω

RDS(on)3 ID=10mA, VGS=1.5V 2.6 5.2 Ω

=1mA, VGS=0 30 V VDS=30V, VGS=0 10 µA VGS=±8V, VDS=0 ±10 µA

VDS=10V, ID=150mA 400 560 mS

min typ max

Marking : FP Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

GI IM

20101 TS IM TA-2910

No.6796-1/6

MCH6615

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V, f=1MHz 30 pF Output Capacitance Coss VDS=10V, f=1MHz 15 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 10 pF Turn-ON Delay Time td(on) See specified Test Circuit 32 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit 250 ns Fall Time t Total Gate Charge Qg VDS=10V, VGS=10V, ID=300mA 2.34 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=300mA 0.38 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=300mA 0.45 nC Diode Forward Voltage V [P-channel] Drain-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Gate-to-Source Leakage Current I Cutoff Voltage VGS(off) VDS=--10V, ID=--100µA --0.4 --1.4 V Forward Transfer Admittance

Static Drain-to-Source On-State Resistance RDS(on)2 ID=--50mA, VGS=--2.5V 3.5 4.9 Ω

Input Capacitance Ciss VDS=--10V, f=1MHz 28 pF Output Capacitance Coss VDS=--10V, f=1MHz 15 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 5.2 pF Turn-ON Delay Time td(on) See specified Test Circuit 24 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit 200 ns Fall Time t Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--200mA 2 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--200mA 0.25 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--200mA 0.35 nC Diode Forward Voltage V

SD

(BR)DSSID

DSS GSS

yfs



RDS(on)1 ID=--100mA, VGS=--4V 2.4 3.1 Ω

RDS(on)3 ID=--10mA, VGS=--1.5V 10 20 Ω

SD

See specified Test Circuit 110 ns

r

See specified Test Circuit 160 ns

f

IS=300mA, VGS=0 0.8 1.2 V

=--1mA, VGS=0 --30 V VDS=--30V, VGS=0 --10 µA VGS=±8V, VDS=0 ±10 µA

VDS=--10V, ID=--100mA 210 300 mS



See specified Test Circuit 75 ns

r

See specified Test Circuit 150 ns

f

IS=--200mA, VGS=0 --0.82 --1.2 V

min typ max

Ratings

Unit

Switching Time Test Circuit

[N-channel] [P-channel]

4V 0V

PW=10µs D.C.≤1%

P.G

V

IN

VDD=15V

D

S

ID=150mA RL=100Ω

V

OUT

MCH6615

V

IN

G

50Ω

0V

--4V PW=10µs

D.C.≤1%

P.G

V

IN

Electrical Connection

D1 G2 S2

(Top view)

S1 G1 D2

V

IN

G

50Ω

VDD= --15V

ID= --100mA RL=150Ω

D

S

V

OUT

MCH6615

No.6796-2/6

0.30

3.5V

4.0V

0.25

0.20

-- A D

0.15

0.10

Drain Current, I

0.05

000.1

0.6

VDS=10V

0.5

0.4

-- A D

0.3

I

-- V

D

DS

3.0V

2.5V

6.0V

2.0V

0.2

0.3

0.4

0.5 0.6 0.7 0.8 0.9 1.0

Drain-to-Source V oltage, VDS -- V

I

-- V

D

GS

VGS=1.5V

Ta=--25°C

MCH6615

[Nch]

IT00224

[Nch]

75°C

25°C

--0.20

--0.18

--0.16

--0.14

-- A D

--0.12

--0.10

--0.08

--0.06

Drain Current, I

--0.04

--0.02 0

0

--0.40

--0.35

--0.30

-- A

--0.25

D

--0.20

I

-- V

D

--4.0V

DS

--3.0V

--3.5V

--6.0V

--2.5V

--2.0V

--0.2

--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9

Drain-to-Source V oltage, VDS -- V

I

-- V

D

GS

Ta= --25°C

75°C

[Pch]

VGS= --1.5V

IT00237

[Pch]

VDS= --10V

25°C

0.2

Drain Current, I

0.1

0

3.0

2.5

(on) -- Ω

2.0

0.5 1.0 1.5 2.0

DS

1.5

001

7 5

3 2

7 5

3 2

0.01

80mA

23 57 23 57

1.0

0.5

Static Drain-to-Source

On-State Resistance, R

10

(on) -- Ω

DS

1.0

Static Drain-to-Source

On-State Resistance, R

0.1

Gate-to-Source V oltage, VGS -- V

RDS(on) -- V

GS

ID=150mA

2

3

4

5

6

78910

Gate-to-Source V oltage, VGS -- V

RDS(on) -- I

D

Ta=75°C

--25°C

25°C

Drain Current, ID -- A

0.1

IT00225

[Nch]

Ta=25°C

IT00226

[Nch]

VGS=4V

IT00227

2.5

1.0

--0.15

Drain Current, I

--0.10

--0.05

0

0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5

Gate-to-Source V oltage, VGS -- V

(on) -- Ω

DS

RDS(on) -- V

7

6

5

ID= --100mA

GS

--50mA

Static Drain-to-Source

On-State Resistance, R

00--11--22--33--44--5

--68--7 --8 --9 --10

Gate-to-Source V oltage, VGS -- V

10

7

5

(on) -- Ω

RDS(on) -- I

D

DS

3

Ta=75°C

25°C

2

Static Drain-to-Source

On-State Resistance, R

1.0

--0.01

23 57 23 5

--25°C

--0.1

Drain Current, ID -- A

IT00238

[Pch]

Ta=25°C

IT00239

[Pch]

VGS= --4V

IT00240

No.6796-3/6

10

7 5

3

(on) -- Ω

2

DS

1.0 7 5

3 2

Static Drain-to-Source

On-State Resistance, R

0.1

0.01

10

7

5

(on) -- Ω

23 57 23 57

DS

3

2

Static Drain-to-Source

On-State Resistance, R

1.0

0.001

3.0

MCH6615

RDS(on) -- I

D

Ta=75°C

--25°C

25°C

Drain Current, ID -- A

0.1

RDS(on) -- I

D

Ta=75°C

--25°C

25°C

23 57 23

0.01

Drain Current, ID -- A

RDS(on) -- Ta

[Nch]

VGS=2.5V

1.0

IT00228

[Nch]

VGS=1.5V

IT00229

[Nch]

10

7

5

(on) -- Ω

DS

3

2

Static Drain-to-Source

On-State Resistance, R

1.0

--0.01

100

7 5

3

(on) -- Ω

2

DS

10

7 5

3 2

Static Drain-to-Source

On-State Resistance, R

1.0

--0.001

RDS(on) -- I

Ta=75°C

25°C

--25°C

Drain Current, ID -- A

RDS(on) -- I

Ta=75°C

--25°C

25°C

Drain Current, ID -- A

RDS(on) -- Ta

--0.1

D

--0.01

[Pch]

VGS= --2.5V

5327532

IT00241

[Pch]

VGS= --1.5V

2323 57

IT00242

[Pch]

2.5

(on) -- Ω

2.0

DS

1.5

1.0

0.5

Static Drain-to-Source

On-State Resistance, R

fs| -- S

y

--600--40

10

7 5

3 2

1.0 7 5

3 2

--20

Forward Transfer Admittance, |

0.1

0.01

23 57 23 57

=2.5V

=80mA, V

I

D

I

D

0

GS

=150mA, V

20

40

=4.0V

GS

60

80 100 120 140

Ambient Temperature, Ta -- °C

|yfs| -- I

D

Ta= --25°C

75°C

25°C

Drain Current, I

0.1

D

-- A

IT00230

[Nch]

VDS=10V

IT00231

1.0

5

(on) -- Ω

DS

4

3

2

Static Drain-to-Source

On-State Resistance, R

--600--401--20

1.0 7

5

fs -- S

3

y

2

0.1 7

5

3 2

Forward Transfer Admittance, 

0.01

--0.01

2

= --2.5V

GS

= --50mA, V

I

D

= --100mA, V

I

D

0

20 40660780 100 120 140 160

GS

= --4.0V

Ambient Temperature, Ta -- °C

yfs -- I

D

Ta= --25°C

75°C

25°C

3

Drain Current, I

--0.1

D

-- A

IT00243

[Pch]

VDS= --10V

53275

IT00244

No.6796-4/6

1.0 7 5

3

-- A

2

F

0.1 7 5

Forward Current, I

3 2

I

F

-- V

Ta=75°C

25°C

SD

--25°C

MCH6615

[Nch]

VGS=0

--1.0 7

5

3

-- A

2

F

--0.1 7

5

Forward Current, I

3 2

I

F

Ta=75°C

-- V

25°C

SD

[Pch]

VGS=0

--25°C

Switching Time, SW Time -- ns

Ciss, Coss, Crss -- pF

0.01

1000

100

0

Diode Forward V oltage, V

7 5

3 2

7 5

0.6 0.8 1.0 1.20.2 0.4

SW Time -- I

t

(off)

d

t

f

t

r

SD

D

-- V

1.4

IT00232

[Nch]

VDD=15V VGS=4V

td(on)

3 2

10

0.01

Drain Current, I

0.1

D

Ciss, Coss, Crss -- V

7 5

3 2

10

7 5

3 2

-- A

23 523 57

DS

IT00233

[Nch]

f=1MHz

Ciss

Coss

Crss

--0.01

--0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0

1000

7 5

3 2

100

7 5

3

Switching Time, SW Time -- ns

2

10

--0.01

100

7 5

3 2

Diode Forward V oltage, V

SW Time -- I

SD

D

-- V

VDD= --15V VGS= --4V

23 57 23

Drain Current, I

Ciss, Coss, Crss -- V

D

--0.1

-- A

DS

Ciss

Coss

10

7

Ciss, Coss, Crss -- pF

5

3 2

Crss

IT00245

[Pch]

td(off)

t

f

t

r

td(on)

IT00246

[Pch]

f=1MHz

1.0 0

10

9

8

-- V

7

GS

6

5

4

3

2

Gate-to-Source V oltage, V

1 0

0

5

VDS=10V ID=300mA

10 15

Drain-to-Source V oltage, V

VGS -- Qg

0.5

1.0

Total Gate Charge, Qg -- nC

1.5

20 25 30

DS

-- V

IT00234

[Nch]

2.0 2.5

IT00235

1.0 0

--10

--9

--8

-- V

--7

GS

--6

--5

--4

--3

--2

Gate-to-Source V oltage, V

--1 0

0

--5

Drain-to-Source V oltage, V

VDS= --10V ID= --200mA

--10 --15

--20 --30--25

DS

VGS -- Qg

Total Gate Charge, Qg -- nC

-- V

IT00247

[Pch]

2.51.5 2.00.5 1.0

IT00248

No.6796-5/6

5

IDP=2.6A

3 2

1.0

ID=0.65A

7

-- A

5

D

3 2

0.1 7

Drain Current, I

5 3

2

0.01

Operation in this area is limited by RDS(on).

Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm)1unit

23 57

0.1 1.0

A S O

DC operation

23 5 23 57

Drain-to-Source V oltage, V

P

-- Ta

1.0

-- W

0.8

D

0.6

Mounted on a ceramic board(900mm

D

100ms

DS

10ms

10

-- V

<10µs

1ms

[Pch, Nch]

MCH6615

[Nch]

IT02520

3

IDP= --1.6A

2

--1.0 7

ID= --0.4A

5

-- A D

3 2

Operation in this area is

--0.1

limited by RDS(on).

7 5

Drain Current, I

3

Ta=25°C

2

Single pulse Mounted on a ceramic board (900mm2✕0.8mm)1unit

--0.01

--1.0

23 57 23 5

A S O

DC operation

--10

Drain-to-Source V oltage, V

100ms

10ms

DS

<10µs

1ms

-- V

[Pch]

IT02519

0.4

2

✕0.8mm)1unit

0.2

Allowable Power Dissipation, P

0

0 20 40 60 100 120 140

80

Amibient Tamperature, Ta -- °C

160

IT02521

Note on usage : Since the MCH6615 is designed for high-speed switching applications, please avoid using

this device in the vicinity of highly charged objects.

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

This catalog provides information as of February, 2001. Specifications and information herein are subject to change without notice.

No.6796-6/6

PS