Datasheet MCH3402 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6444

MCH3402

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· Ultrahigh-speed swithcing.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : KB Continued on next page.

SSD
SSG

D

SG

R

SD

R

SD

WP ≤ elcycytud,sµ01 ≤ %16.5A

PD

Mounted on a ceramic board (900mm2×0.8mm)

D

I

SSD)RB(

D

V

SSD
SSG

SD

V

SG

)ffo(VSDI,V01=

1)no(IDV,Am007=

2)no(IDV,Am004=
SD

SD
SD

Package Dimensions

unit:mm

2167

[MCH3402]

0.3

3

12

0.65

2.0

V,Am1=

0=03V

SG

V,V03=

0=01Aµ

SG

V,V61±=

0=01±Aµ

SD

Am1=0.14.2V

D

Am007=1.16.1S

D

V01=022082mΩ

SG

V4=043084mΩ

SG

zHM1=f,V01=09Fp
zHM1=f,V01=05Fp
zHM1=f,V01=22Fp

0.250.25

1.6

0.15

0.15

2.1

0.85

nimpytxam

1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3

03V
02±V

4.1A

1W

˚C
˚C

sgnitaR

tinU

30300TS (KOTO) TA-2456 No.6444-1/4

MCH3402

Continued from preceding page.

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

Switching Time Test Circuit

VDD=15V

V

IN

10V

0V

PW=10µs
D.C.≤1%

V

IN

G

D

ID=700mA

RL=21.4Ω

)no(tiucriCtseTdeificepseeS01sn

d

r

)ffo(tiucriCtseTdeificepseeS92sn

d

f

SG
SG
SG

V,A4.1=

0=9.02.1V

SG

V

OUT

I

DS

S

tiucriCtseTdeificepseeS31sn

tiucriCtseTdeificepseeS51sn

I,V01=

D

I,V01=

D

I,V01=

D

sgnitaR

nimpytxam

A4.1=5Cn
A4.1=1Cn
A4.1=1Cn

tinU

P.G

1.4

1.2

1.0

–A

D

0.8

0.6

0.4

Drain Current, I

0.2

0

0

800

700

600

–mΩ

(on)

500

DS

400

ID=0.4A

300

200

100

Static Drain-to-Source

On-State Resistance, R

0

0 2 4 6 8 10 12

50Ω

8.0V

10.0V

0.2

Drain-to-Source Voltage, VDS–V

RDS(on) -- V

0.7A

Gate-to-Source Voltage, V

S

I

D

6.0V

-- V

4.0V

MCH3402

DS

3.5V

3.0V

VGS=2.5V

0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9

GS

Ta=25°C

14 16 18 20

–V

GS

IT01610

IT01612

3.0

VDS=10V

2.5

–A

2.0

D

1.5

1.0

Drain Current, I

0.5

0

0 0.5 1.0

600

500

–mΩ

400

(on)

DS

300

200

100

Static Drain-to-Source

On-State Resistance, R

0

- -60

Gate-to-Source Voltage, VGS–V

--40 --20 0 20 40 60 80 100 120 160140

I

-- V

D

GS

Ta=--25

25°C

2.0

1.5

2.5 3.0

RDS(on) -- Ta

=4V

GS

=0.4A, V

I

D

=0.7A, V

I

D

Ambient Temperature, Ta – ˚C

GS

=10V

3.5

°C

75°C

4.54.0

IT01611

IT01613

No.6444-2/4

fs|–S

y

1.0

Forward Transfer Admittance, |

0.1

100

10

Switching Time, SW Time – ns

1.0

V

–

GS

Gate-to-Source Voltage, V

1.2

10

7
5

3
2

7
5

3
2

0.01

7
5

3
2

7
5

3
2

0.1

10

VDS=10V

9

ID=1.4A

8

7

6

5

4

3

2

1
0

0

yfs -- I

D

VDS=10V

°C

Ta=--25

°C

23 57

Drain Current, ID–A

75°C

2

0.1

SW Time -- I

357

25

1.0

D

23 57

VDD=15V
VGS=10V

td(off)

t

f

r

t

td(on)

23 57 23

Drain Current, ID–A

1.0

VGS -- Qg

Total Gate Charge, Qg – nC

P

-- Ta

D

MCH3402

10

IT01614

IT01616

5.03.0 4.01.0 2.0 4.52.5 3.50.5 1.5

IT01618

I

-- V

F

10

7
5

3
2

–A

1.0

F

7
5

3
2

0.1
7

Forward Current, I

5
3

2

0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

SD

°C

75

°C

Ta=

25°C

--25

Diode Forward Voltage, VSD–V

1000

7
5

3
2

100

7
5

3
2

10

7

Ciss, Coss, Crss – pF

5
3

2

1.0
0

10

7
5

3
2

1.0

–A

7

D

,I

5
3

2

0.1
7

Drain Current

5
3

Ta=25°C

2

Single pulse

Mounted on a ceramic board (900mm2×0.8mm)

0.01

0.1 1.0 10 100

Ciss, Coss, Crss -- V

5

10 15

Drain-to-Source Voltage, VDS–V

A S O

I

=5.6A

DP

I

=1.4A

D

100ms

DC operation

Operation in this
area is limited by RDS(on).

23 57 23 57 23 57

Drain-to-Source Voltage, VDS–V

DS

Ciss
Coss

Crss

20 3025

≤10µs

1ms

10ms

V

= 0

GS

IT01615

f=1MHz

IT01617

IT01619

1.0

–W

D

0.8

0.6

0.4

0.2

Allowable Power Dissipation, P

0020 40

Mounted on a ceramic board (900mm

2

×0.8mm)

60

Ambient Temperature, Ta – ˚C

80 100 120

140 160

IT01620

No.6444-3/4

MCH3402

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.

PS No.6444-4/4