Datasheet MCH3308 Datasheet (SANYO)

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Page 1

Ordering number : ENN7008

MCH3308

P-Channel Silicon MOSFET

MCH3308

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 4V drive.

Package Dimensions

unit : mm

2167A

[MCH3308]

0.65

2.0

0.3

0.07

2.1

0.250.25

1.6

0.15

1 : Gate 2 : Source 3 : Drain

Specifications

0.85

SANYO : MCPH3

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V Gate-to-Source Voltage V Drain Current (DC) I Drain Current (Pulse) I Allowable Power Dissipation P Channel T emperature T ch 150 ° C Storage T emperature Tstg --55 to +150 °C

DSS GSS

PW≤10µs, duty cycle≤1% --4 A Mounted on a ceramic board (900mm2✕0.8mm) 0.8 W

--30 V

±20 V

--1 A

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Gate-to-Source Leakage Current I Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS GSS

yfs



RDS(on)1 ID=--500mA, VGS=--10V 420 550 mΩ RDS(on)2 ID=--300mA, VGS=--4V 720 1000 mΩ

=--1mA, VGS=0 --30 V VDS=--30V, VGS=0 --1 µA VGS=±16V, VDS=0 ±10 µA

VDS=--10V, ID=--500mA 0.57 0.82 S



Marking : JH Contin ued on ne xt page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

73001 TS IM TA-3226

No.7008-1/4

Page 2

MCH3308

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=--10V, f=1MHz 75 pF Output Capacitance Coss VDS=--10V, f=1MHz 16 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 9 pF Turn-ON Delay Time td(on) See specified Test Circuit 6 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit 12 ns Fall Time t Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--1A 2.6 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--1A 0.5 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--1A 0.5 nC Diode Forward Voltage V

See specified Test Circuit 4 ns

IS=--1A, VGS=0 --0.89 --1.5 V

Switching Time Test Circuit

Ratings

min typ max

Unit

--10V

P.G

--2.0

--1.5

-- A D

--1.0

Drain Current, I

--0.5

PW=10µs D.C .≤1%

50Ω

-- V

VDD= --15V

--6V

--5V

ID= --500mA RL=30Ω

MCH3308

OUT

--1.4

VDS= --10V

--1.2

-- V

--10V

--8V

--4V

= --3V

--1.0

-- A D

--0.8

--0.6

--0.4

Drain Current, I

--0.2

Ta=75°C

--25°C

--0.2

--0.4 --0.6 --0.8 --2.0--1.0 --1.2 --1.4 --1.6 --1.8

Drain-to-Source V oltage, V

1400

1200

ID= --0.3A

1000

(on) -- mΩ

800

600

400

200

Static Drain-to-Source

On-State Resistance, R

--1 --2 --3 --4 --6 --7 --8--5 --9 --10

RDS(on) -- V

--0.5A

Gate-to-Source V oltage, V

-- V

IT03310

Ta=25°C

IT03312

= --4V

25°C

= --10V

0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0

Gate-to-Source V oltage, V

1200

1000

800

(on) -- mΩ

600

400

200

Static Drain-to-Source

On-State Resistance, R

--60 --40 --20 0 20 40 60 80 100 120 140 160

RDS(on) -- Ta

= --0.3A, V

= --0.5A, V

Ambient Temperature, Ta -- °C

-- V

No.7008-2/4

IT03311

IT03313

Page 3

yfs -- I

fs -- S

1.0



Ta= --25°C

25°C

°C

Forward Transfer Admittance, 

0.1

100

Switching Time, SW Time -- ns

1.0

--10

23 57 2 2357

--0.01 --0.1

Drain Current, I

SW Time -- I

VDD= --15V

7 5

3 2

7 5

3 2

VGS= --

10V

td(on)

--0.1 --1.0

2735723

Drain Current, I

VGS -- Qg

VDS= --10V

(off)

ID= --1.0A

--8

-- V GS

--6

--4

--2

Gate-to-Source V oltage, V

0 0.5 1.0 1.5 2.0 3.02.5

Total Gate Charge, Qg -- nC

-- Ta

1.0

-- A

VDS= --10V

--1.0

IT03314

IT03316

IT03318

MCH3308

-- V

Ta=75°C

Ciss

25°C

--25°C

-- V

5 3

--1.0

-- A

5 3

--0.1 7 5

Forward Current, I

3 2

--0.01 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4

Diode Forward V oltage, V

100

Ciss, Coss, Crss -- V

Coss

Ciss, Coss, Crss -- pF

0 --5 --10 --15 --20 --25 --30

Drain-to-Source V oltage, V

--10 7

= --4A

3 2

= --1A

--1.0

-- A

5 3

--0.1 7

Drain Current, I

5 3

Ta=25°C

Single pulse Mounted on a ceramic board(900mm2✕0.8mm)

--0.01

Operation in this area is limited by RDS(on).

23 57 23 57

--0.1--0.01 --1.0

Drain-to-Source V oltage, V

Crss

A S O

-- V

10ms

100ms

DC operation

23 57

-- V

f=1MHz

<10µs

1ms

--10

VGS=0

IT03315

IT03317

100µs

532

IT03319

-- W

0.8

0.6

0.4

0.2

Allowable Power Dissipation, P

0020 40

Mounted on a ceramic board(900mm

✕0.8mm)

60 80 100 120 140 160

Ambient Temperature, Ta -- °C

IT03320

No.7008-3/4

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MCH3308

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

This catalog provides information as of July, 2001. Specifications and information herein are subject to change without notice.

No.7008-4/4