Datasheet MCH3410 Datasheet (SANYO)

Ordering number : ENN6864

MCH3410

N-Channel Silicon MOSFET

MCH3410

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 4V drive.

Package Dimensions

unit : mm

2167

[MCH3410]

0.3

3

12

0.65

2.0

0.250.25

1.6

2.1

0.15

1 : Gate

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 8.0 A
Mounted on a ceramic board (900mm2✕0.8mm) 0.9 W

0.85

0.15

2 : Source
3 : Drain

SANYO : MCPH3

30 V

±20 V

2.0 A

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=10V , f=1MHz 120 pF

Output Capacitance Coss VDS=10V , f=1MHz 30 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 15 pF

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=1A, VGS=10V 115 150 mΩ
RDS(on)2 ID=0.5A, VGS=4V 190 270 mΩ

=1mA, VGS=0 30 V
VDS=30V , VGS=0 1 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V, ID=1A 1.4 2.0 S

min typ max

Marking : KK Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

13001 TS IM TA-3061

No.6864-1/4

MCH3410

Continued from preceding page.

Parameter Symbol Conditions

Turn-ON Delay Time td(on) See specified Test Circuit 6 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 17 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=2.0A 3.6 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=2.0A 0.6 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=2.0A 0.5 nC
Diode Forward Voltage V

SD

See specified Test Circuit 4 ns

r

See specified Test Circuit 5 ns

f

IS=2.0A, VGS=0 0.88 1.2 V

min typ max

Switching Time Test Circuit

VDD=15V

V

IN

10V

0V

PW=10µs
D.C.≤1%

V

IN

G

ID=1A
RL=15Ω

D

V

OUT

Ratings

Unit

P.G

3.0

5V

2.5

6V

8V

2.0

-- A
D

1.5

1.0

10V

Drain Current, I

0.5

0

0

0.2

Drain-to-Source V oltage, V

400

350

300

(on) -- mΩ

250

DS

200

150

100

50

Static Drain-to-Source

On-State Resistance, R

ID=0.5A

0

0123456

RDS(on) -- V

Gate-to-Source V oltage, V

MCH3410

S

I

50Ω

D

-- V

DS

4V

=3V

V

GS

0.4 0.6 0.8 1.0

IT02709

-- V

DS

GS

Ta=25°C

1.0A

78910

IT02711

-- V

GS

I

-- V

-- A

3.0

VDS=10V

2.5

2.0

D

GS

D

1.5

1.0

Drain Current, I

0.5

0

0 0.5 1.0 1.5 2.0 4.03.53.02.5

Gate-to-Source V oltage, V

300

250

(on) -- mΩ

200

DS

150

100

50

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 140 160

RDS(on) -- Ta

=0.5A, V

I

D

=1.0A, V

I

D

GS

Ta=75°C

=4V

GS

--25°C

GS

=10V

Ambient Temperature, Ta -- °C

25°C

-- V

No.6864-2/4

IT02710

IT02712

MCH3410

10

7
5

fs -- S

y

3
2

1.0
7
5

3
2

Forward Transfer Admittance, 

0.1

0.01

100

7
5

3
2

10

7
5

3

Switching Time, SW Time -- ns

2

1.0
3

10

8

-- V
GS

6

4

2

Gate-to-Source V oltage, V

0

0

1.2

yfs -- I

D

VDS=10V

25°C

Ta= --25°C

75°C

23 57 23 57 23 57

0.1 1.0 10

Drain Current, I

SW Time -- I

D

-- A

D

VDD=15V
VGS=10V

t

(off)

d

t

f

td(on)

t

r

57

23 5 23 57

0.1

Drain Current, I

D

1.0

-- A

VGS -- Qg

VDS=10V
ID=2.0A

Total Gate Charge, Qg -- nC

P

-- Ta

D

IT02713

IT02715

IT02717

I

-- V

F

25°C

--25°C

SD

SD

-- V

VGS=0

IT02714

DS

f=1MHz

10

7
5

3
2

-- A

1.0

F

7
5

3
2

0.1
7

Forward Current, I

5
3

2

0.01
0 0.2 0.4 0.6 0.8 1.0 1.41.2

Ta=75°C

Diode Forward V oltage, V

1000

7
5

3
2

Ciss, Coss, Crss -- V

Ciss

100

7
5

Ciss, Coss, Crss -- pF

3
2

Coss

Crss

10

0

10

7
5

3
2

1.0

-- A

7

D

5
3

2

0.1
7

Drain Current, I

5
3

2

4.54.02.0 2.5 3.0 3.50.5 1.0 1.5

0.01

0.1

5

10

Drain-to-Source V oltage, V

DS

-- V

A S O

10ms

1ms

DS

100µs

-- V

I

=8A

DP

ID=2A

100ms

DC operation

Operation in this
area is limited by RDS(on).

Ta=25°C
Single pulse

Mounted on a ceramic board(900mm2✕0.8mm)

23 57 23 57 23 57

1.0 10

Drain-to-Source V oltage, V

30252015

IT02716

<10µs

100

IT02718

1.0

-- W
D

0.9

0.8

0.6

0.4

0.2

Allowable Power Dissipation, P

0020 40

Mounted on a ceramic board(900mm

2

✕0.8mm)

60

80 100 120

Ambient Temperature, Ta -- °C

140 160

IT02719

No.6864-3/4

MCH3410

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of January, 2001. Specifications and information herein are subject
to change without notice.

No.6864-4/4

PS