Datasheet MCH6610 Datasheet (SANYO)

Ordering number : ENN7042

Preliminary

MCH6610

N-Channel Silicon MOSFET

MCH6610

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 2.5V drive.

• Composite type with 2 MOSFETs contained in a single

package, facilitating high-density mounting.

Package Dimensions

unit : mm

2173A

[MCH6610]

0.3

546

1

0.07

2.0

2.1

0.250.25

1.6

32

0.65

0.15

654

1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1

SANYO : MCPH6

Specifications

0.85

123

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 1.8 A
Mounted on a ceramic board (900mm2✕0.8mm)1unit

50 V

±10 V

0.45 A

0.8 W

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V , ID=100µA 0.4 1.3 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=100mA, VGS=4V 1.9 2.4 Ω
RDS(on)2 ID=50mA, VGS=2.5V 2.2 3 Ω
RDS(on)3 ID=10mA, VGS=1.5V 3.2 6.4 Ω

=1mA, VGS=0 50 V
VDS=50V , VGS=0 10 µA
VGS=±8V, VDS=0 ±10 µA

VDS=10V , ID=100mA 340 490 mS

Marking : FJ Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

O1501 TS IM TA-2465

No.7042-1/4

MCH6610

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V , f=1MHz 25 pF
Output Capacitance Coss VDS=10V , f=1MHz 12 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 4.5 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 25 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 350 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=200mA 2.18 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=200mA 0.28 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=200mA 0.45 nC
Diode Forward Voltage V

SD

See specified Test Circuit. 75 ns

r

See specified Test Circuit. 170 ns

f

IS=200mA, VGS=0 0.83 1.2 V

Switching Time Test Circuit Electrical Connection

V

IN
4V
0V

PW=10µs
D.C .≤1%

V

IN

G

VDD=25V

ID=100mA
RL=250Ω

D

V

D1 G2 S2

OUT

S1 D2G1

Ratings

min typ max

Unit

P.G

0.20

0.18

0.16

0.14

-- A
D

0.12

0.10

0.08

0.06

Drain Current, I

0.04

0.02

0

0

5

50Ω

I

-- V

D

3.5V

4.0V

DS

3.0V

2.5V

2.0V

6.0V

0.2

0.4

Drain-to-Source V oltage, V

RDS(on) -- V

0.6

S

DS

GS

MCH6610

V

GS

0.8 1.00.1 0.3 0.5 0.7 0.9

-- V

Ta=25°C

0.40

0.35

D

GS

VDS=10V

75°C

I

-- V

=1.5V

0.30

-- A

0.25

D

0.20

0.15

Drain Current, I

0.10

0.05

0

0 0.5 1.0 1.5 2.0 2.5

IT00274 IT00275

10

7

Gate-to-Source V oltage, V

Ta=75°C

RDS(on) -- I

--25°C

25°C

Ta= --25°C

GS

D

25°C

-- V

VGS=4V

4

(on) -- Ω

DS

3

100mA

ID=50mA

2

1

Static Drain-to-Source

On-State Resistance, R

0

1263456

0

Gate-to-Source V oltage, V

GS

7

-- V

5

(on) -- Ω

DS

3

Ta=75°C

2

25°C

--25°C

Static Drain-to-Source

On-State Resistance, R

8910

IT00276 IT00277

1.0

0.01

357 2357

2

Drain Current, I

0.1

D

-- A

1.0

No.7042-2/4

MCH6610

10

RDS(on) -- I

D

VGS=2.5V

10

RDS(on) -- I

D

VGS=1.5V

7

5

(on) -- Ω

DS

3

2

Static Drain-to-Source

On-State Resistance, R

1.0

0.01 0.1

23 57 23 5

Drain Current, I

4.5

4.0

3.5

(on) -- Ω

3.0

DS

2.5

2.0

1.5

1.0

Static Drain-to-Source

On-State Resistance, R

0.5

0

--60

--40 --20

0

Ambient Temperature, Ta -- °C Drain Current, I

5

3

2

-- A

F

0.1
7
5

3

Forward Current, I

2

0.01

0.2

0.4 0.6 0.8 1.0 1.2

Diode Forward V oltage, V

Ciss, Coss, Crss -- V

5

10 15

Ciss, Coss, Crss -- pF

100

1.0

7
5

3
2

10

7
5

3
2

0

Drain-to-Source V oltage, V

Ta=75°C

25°C

--25°C

D

-- A

IT00278 IT00279

RDS(on) -- Ta

=2.5V

GS

SD

GS

=4.0V

IT00280 IT00281

=50mA, V

I

D

=100mA, V

I

D

20 40 60 80 100 120 140 160

I

-- V

F

VGS=0

25°C

Ta=75°C

--25°C

SD

-- V

IT00282 IT00283

DS

f=1MHz

Ciss

Coss

Crss

20 5025 30 35 40 45

DS

-- V

IT00284 IT00285

7

5

(on) -- Ω

DS

3

2

Static Drain-to-Source

On-State Resistance, R

1.0

0.001 0.01

23 57 23 5

Drain Current, I

yfs -- I

Ta= --25°C

fs -- S

y

1.0

7

5

3

75°C

2

Forward Transfer Admittance, 

0.1

0.01

1000

7
5

3
2

100

7
5

3

Switching Time, SW Time -- ns

2

10

0.01 0.1

23 57 23 57

SW Time -- I

23 57 23

Drain Current, I

10

9

8

-- V

7

GS

6

5

4
3

2

Gate-to-Source V oltage, V

1
0

0

VDS=10V
ID=200mA

VGS -- Qg

Total Gate Charge, Qg -- nC

Ta=75°C

25°C

--25°C

0.1

t

(off)

d

t

t

td(on)

f

r

25°C

D

D

D

-- A

D

VDS=10V

1.0

-- A

D

VDD=25V
VGS=4V

-- A

2.51.5 2.00.5 1.0

No.7042-3/4

MCH6610

P

3

I

=1.8A

2

DP

1.0
7

I

=0.45A

D

5

-- A
D

3
2

A S O

DC operation

<10µs

1ms

10ms

100ms

-- W
D

1.0

0.8

0.6

Mounted on a ceramic board(900mm

D

-- Ta

0.1
7

Operation in this

5

Drain Current, I

0.01

area is limited by RDS(on).

3

Ta=25°C

2

Single pulse
Mounted on a ceramic board(900mm2✕0.8mm)1unit

23 57 23 5

0.1

1.0

23 57

Drain-to-Source V oltage, V

10 100

-- V

DS

7

IT03640

0.4

0.2

Allowable Power Dissipation, P

0020 40 60

Ambient Temperature, Ta -- °C

80 100 120

Note on usage : Since the MCH6610 is designed for high-speed switching applications, please avoid using

this device in the vicinity of highly charged objects.

2

✕0.8mm)1unit

140 160

IT03637

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of October, 2001. Specifications and information herein are subject
to change without notice.

No.7042-4/4

PS