Datasheet MCH5702 Datasheet (SANYO)

Page 1
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7076
MCH5702
TR : NPN Epitaxial Planar Silicon Transistor
SBD : Schottky Barrier Diode
MCH5702
DC / DC Converter Applications
Features
•
Composite type with an NPN transistor and a Schottky barrier diode contained in one package facilitating high-density mounting.
• The MCH5702 consists of two chips which are
• Ultrasmall package (0.85mm high when mounted)
facilitates miniaturization in end products.
Specifications
Package Dimensions
unit : mm
2200
[MCH5702]
0.250.25
4
2.1
1.6
0.65
0.3
5
132
0.07
2.0
54
0.85
123
0.15
1 : Base 2 : Emitter 3 : Anode 4 : Cathode 5 : Collector
SANYO : MCPH5
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit [TR] Collector-to-Base Voltage V Collector-to-Emitter Voltage V Emitter-to-Base Voltage V Collector Current I Collector Current (Pulse) I Base Current I Collector Dissipation P Junction T emperature Tj 150 °C Storage T emperature T stg --55 to +125 °C [SBD] Repetitive Peak Reverse Voltage V Non-repetitive Peak Reverse Surge Voltage Average Recified Current I Surge Current I Junction T emperature Tj --55 to +125 °C Storage T emperature T stg --55 to +125 °C
Marking : PC
V
CBO CEO EBO
C
CP
B
C
RRM RSM
O
FSM
Mounted on a ceramic board (600mm2✕0.8mm) 0.7 W
50Hz sine wave, 1cycle 10 A
15 V 15 V
5V
1.5 A 3A
300 mA
30 V 30 V
0.7 A
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
N1501 TS IM TA-3391
GI IM
No.7076-1/5
Page 2
Electrical Characteristics at Ta=25°C
MCH5702
Parameter Symbol Conditions
[TR] Collector Cutoff Current I Emitter Cutoff Current I DC Current Gain h Gain-Bandwidth Product f Output Capacitance Cob VCB=10V , f=1MHz 9 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=750mA, IB=15mA 130 200 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=750mA, IB=15mA 0.85 1.2 V Collector-to-Base Breakdown Voltage V Collector-to-Emitter Breakdown Voltage V Emitter-to-Base Breakdown Voltage V Turn-ON Time t Storage Time t Fall Time t [SBD] Reverse Voltage V
Forward Voltage VF2I
Reverse Current I Interterminal Capacitance C VR=10V, f=1MHz 20 pF Reverse Recovery Time t
CBO EBO
FE
(BR)CBOIC (BR)CEOIC (BR)EBOIE
on
stg
VF1I
VF3I
VCB=12V, IE=0 0.1 µA VEB=4V, IC=0 0.1 µA VCE=2V, IC=100mA 200 560 VCE=2V, IC=300mA 450 MHz
T
=10µA, IE=0 15 V =1mA, RBE=∞ 15 V
=10µA, IC=0 5 V See specified Test Circuit. 40 ns See specified Test Circuit. 180 ns See specified Test Circuit. 20 ns
f
IR=0.5mA 30 V
R
R
rr
=0.3A 0.35 0.40 V
F
=0.5A 0.42 0.47 V
F
=0.7A 0.5 0.55 V
F
VR=10V 200 µA
IF=IR=100mA, See specified Test Circuit 10 ns
Ratings
min typ max
Electrical Connection
Unit
54
(Top view)
123
Switching Time Test Circuit trr Test Circuit
[TR] [SBD]
PW=20µs D.C.≤1%
INPUT
50Ω
IC=20IB1= --20IB2=750mA
V
R
I
B2
I
B1
R
B
++
220µF 470µF
VCC=5VVBE= --5V
OUTPUT
R
L
Duty≤10%
50Ω 100Ω 10Ω
10µs
--5V
100mA100mA
10mA
t
rr
No.7076-2/5
Page 3
2.0
1.8
1.6
A
--
1.4
C
1.2
1.0
0.8
0.6
Collector Current, I
0.4
0.2 0
0
1000
7 5
3 2
(sat) -- mV
CE
100
7 5
3 2
Collector-to-Emitter
Saturation V oltage, V
10
7 5
23 57
0.01 1.00.1
10
7 5
3
(sat) -- V
2
BE
1.0 7
5
3 2
Base-to-Emitter
Saturation V oltage, V
[TR]
8mA
6mA
50mA
40mA
I
C
20mA
30mA
-- V
CE
10mA
4mA
2mA
IB=0
0.20.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, V
VCE(sat) -- I
C
CE --
V
IT01692
[TR]
IC / IB=20
25°C
Ta=75°C
--25°C
23 57 23
Collector Current, I
VBE(sat) -- I
C --
C
A
IT01702
[TR]
IC / IB=50
25°C
Ta= --25°C
75°C
MCH5702
I
--
1.0
0.9
0.8
A
--
0.7
C
0.6
0.5
0.4
0.3
Collector Current, I
0.2
0.1 0
0 0.2 0.4 0.6 0.8 1.21.0
C
Base-to-Emitter V oltage, VBE -- V
1000
7 5
3 2
(sat) -- mV
CE
100
7 5
3 2
Collector-to-Emitter
Saturation V oltage, V
10
7 5
23 57
0.01 1.00.1
VCE(sat) -- I
25°C
Ta= --25°C
Collector Current, I
h
1000
7 5
3
FE
2
100
7 5
DC Current Gain, h
3 2
FE
25°C
V
BE
[TR]
VCE=2V
25°C
--25°C
Ta=75°C
IT01694
C
[TR]
IC / IB=50
75°C
23 57 23
IT01704
[TR]
-- I
C --
C
A
VCE=2V
Ta=75°C
--25°C
0.1 23 57
0.01 1.00.1
Collector Current, I
1000
7 5
MHz
--
3
T
2
100
7 5
3 2
Gain-Brandwidth Product, f
10
23 57 23 257
0.01 1.00.1
Collector Current, IC -- A
23 57 23
A
--
C --
I
C
f
T
IT01706
[TR]
VCE=2V
IT01698
10
100
10
Output Capacitance, Cob -- pF
3
1.0
0.01
23 57
23 57 23
0.1
Collector Current, IC -- A
Cob -- V
7 5
3 2
7 5
3 2
1.0 10
23 57
CB
Collector-to-Base Voltage, V
CB
-- V
1.0
IT01696
[TR]
f=1MHz
23
IT01700
No.7076-3/5
Page 4
5
ICP=3A
3 2
IC=1.5A
1.0
-- A
7
C
5 3
2
0.1 7
5
Collector Current, I
3
Ta=25°C
2
Single pulse Mounted on a ceramic board(600mm2✕0.8mm)
0.01
0.1
Collector-to-Emitter Voltage, V
2
1.0 7 5
-- A
3
F
2
0.1 7 5
Forward Current, I
3 2
0.01 0 0.2 0.4 0.6 0.8
0.7
(1) Rectangular wave θ=60°
-- W
(2) Rectangular wave θ=120°
0.6
(3) Rectangular wave θ=180°
(AV)
F
(4) Sine wave θ=180°
0.5
100°C
Ta=125°C
Rectangular wave
0.4
θ
360°
0.3
A S O
100ms
DC operation
23 5723 57
1.0
I
-- V
F
25°C
50°C
75°C
Forward Voltage, V
PF(AV) -- I
(1)
100µs
500µs
1ms
10ms
CE
F
-- V
F
O
(2)
(4)
MCH5702
P
[TR] [TR]
0.8
0.7
0.6
-- W C
0.5
0.4
0.3
0.2
Mounted on a ceramic board(600mm
Collector Dissipation, P
0.1
0
10
-- V
23
[SBD]
IT01670
0
20 40 60 80
Ambient Temperature, Ta -- °C
100
7 5
3 2
10
7
Ta=125°C
5
-- mA
3
R
2
1.0 7 5
3 2
0.1
Reverse Current, I
7 5
3 2
0.01 0 5 10 15 20 25 30
100°C
75°C
50°C
25°C
Reverse Voltage, V
[SBD]
(3)
-- Ta
C
IR -- V
100
R
-- V
R
2
✕0.8mm)
120 140 160
IT03622IT03621
[SBD]
IT01671
0.2
0.1
0
Average Forward Power Dissipation, P
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Average Forward Current, I
Sine wave
O
-- A
180°
360°
IT01672
No.7076-4/5
Page 5
MCH5702
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of November, 2001. Specifications and information herein are subject to change without notice.
No.7076-5/5
PS
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