Datasheet MCH6601 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6458

MCH6601

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· Ultrahigh-speed swithcing.

· 2.5V drive.

· Composite type with 2 MOSFETs contained in one
package, facilitating high-density mounting.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

Marking : FA Continued on next page.

SSD
SSG

D

SG

R

SD

R

SD

R

SD

WP ≤ elcycytud,sµ01 ≤ %18.0–A

PD

Mounted on a ceramic board (900mm2×0.8mm) 1unit

D

I

SSD)RB(

D

V

SSD
SSG

SD

V

SG

)ffo(VSDI,V01–=

1)no(IDV,Am05–=

2)no(IDV,Am03–=

3)no(IDV,Am1–=

Package Dimensions

unit:mm

2173

[MCH6601]

0.3

5

64

2

13

0.65

2.0

V,Am1–=

0=03–V

SG

V,V03–=

0=01–Aµ

SG

V,V8±=

0=01±Aµ

SD

Aµ001–=4.0–4.1–V

D

Am05–=08011Sm

D

V4–=84.01

SG

V5.2–=114.51

SG

V5.1–=7245

SG

0.250.25

1.6

0.15

0.15

2.1

1 : Source1
2 : Gate1
3 : Drain2

0.85

4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6

sgnitaR

nimpytxam

03–V
01±V

2.0–A

8.0W

˚C
˚C

Ω
Ω
Ω

tinU

30300TS (KOTO) TA-2457 No.6458-1/4

MCH6601

Continued from preceding page.

retemaraPlobmySsnoitidnoC

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01–=

egrahCecruoS-ot-etaGsgQVSDV,V01–=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=

egatloVdrawroFedoiDV

d

r

d

f

DS

SD
SD
SD

)no(tiucriCtseTdeificepseeS42sn

)ffo(tiucriCtseTdeificepseeS021sn

I

S

Electrical Connection Switching Time Test Circuit

zHM1=f,V01–=5.7Fp
zHM1=f,V01–=7.5Fp
zHM1=f,V01–=8.1Fp

tiucriCtseTdeificepseeS55sn

tiucriCtseTdeificepseeS031sn
I,V01–=

SG
SG
SG

V,Am001–=

D

I,V01–=

D

I,V01–=

D

0=38.02.1V

SG

Am001–=34.1Cn
Am001–=81.0Cn
Am001–=52.0Cn

sgnitaR

nimpytxam

tinU

D1 G2 S2

S1 G1 D2

--0.10

--0.09

--0.08

--0.07

–A

--0.06

D

--0.05

--0.04

--0.03

Drain Current, I

--0.02

--0.01
0

--3.5V

--6.0V

0

--0 .4

Drain-to-Source Voltage, VDS–V

25

– Ω

20

(on)

DS

15

ID=--30mA

Static Drain-to-Source

On-State Resistance, R

00--1 --2 --35--410--5

Gate-to-Source Voltage, V

(Top view)

I

-- V

D

--4.0V

--0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8

RDS(on) -- V

--50mA

DS

--3.0V

--2.5V

GS

--630--7 --8 --9 --10

GS

VGS=--1.5V

Ta=25

–V

VDD=--15V

V

IN

0V

--4V
PW=10µs

D.C.≤1%

P.G

--2.0V

IT00077

°C

IT00079 IT00080

V

IN

G

50Ω

--0.20

--0.18

--0.16

--0.14

–A

D

--0.12

--0.10

--0.08

--0.06

Drain Current, I

--0.04

--0.02
0

0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --4.0--3.5

100

7
5

3

– Ω

2

(on)
DS

10

7
5

3
2

Static Drain-to-Source

On-State Resistance, R

1.0

--0.01

ID=--50mA

RL=300Ω

D

S

V

OUT

MCH6601

I

-- V

D

GS

VDS=--10V

25

°C

Ta=--25°C

°C

75

Gate-to-Source Voltage, VGS–V

RDS(on) -- I

D

IT00078

VGS=--4V

Ta=75°C

--25°C

23 57 23

Drain Current, ID–A

25°C

--0 .1

No.6458-2/4

100

7
5

– Ω

3
2

(on)

DS

10

7
5

3
2

Static Drain-to-Source

On-State Resistance, R

1.0

--0.01

RDS(on) -- I

Ta=75°C

25°C

--25°C

Drain Current, ID–A

D

--0.1

RDS(on) -- Ta

14

– Ω

12

(on)

DS

10

8

4

Static Drain-to-Source

On-State Resistance, R

2

--60

--406--20

=- -30mA, V

I

D

=- -50mA, V

I

D

20 4016601880 100 120 140 160

0

Ambient Temperature, Ta – ˚C

5

3

2

–A

F

--0.1
7
5

3

Forward Current, I

2

°C

Ta=75

--0.01

--0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1

Diode Forward Voltage, VSD–V

100

7
5

3
2

10

7
5

Ciss, Coss, Crss – pF

3
2

1.0
0

Ciss, Coss, Crss -- V

--5

--10 --15

Drain-to-Source Voltage, VDS–V

I

25

F

°C

GS

-- V

--25

=- -2.5V

=- -4.0V

GS

SD

°C

--20 --30--25

MCH6601

VGS=--2.5V

327532

IT00081 IT00082

IT00083 IT00084

V

= 0

GS

IT00085

DS

f=1MHz

Ciss
Coss

Crss

IT00087 IT00088

1000

7
5

– Ω

3

(on)

2

DS

100

7
5

3
2

Static Drain-to-Source

On-State Resistance, R

10

--0.0001 --0.001

1.0
7

5

fs|–S

y

3
2

0.1
7

5

3
2

Forward Transfer Admittance, |

0.01

--0.01

1000

7
5

3
2

t

(off)

d

100

7
5

3

Switching Time, SW Time – ns

2

10

--0.01

--10

VDS=--10V

--9

ID=--100mA

V

--8

--7

GS –

--6

--5

--4

--3

--2

Gate-to-Source Voltage, V

--1
0

0

RDS(on) -- I

Ta=75°C

--25°C

Drain Current, ID–A

yfs





°C

Ta=--25

75°C

Drain Current, ID–A

SW Time -- I

t

f

23 57

Drain Current, ID–A

VGS -- Qg

Total Gate Charge, Qg – nC

-- I

td(on)

25°C

D

t

r

D

25°C

--0.1

D

VGS=--1.5V

2323 57

VDS=--10V

327532

VDD=--15V
VGS=--4V

--0.1

IT00086

1.60.6 0.8 1.0 1.2 1.40.2 0.4

No.6458-3/4

--1 .0
7

IDP=--0.8A

5

3

ID=--0.2A

–A

2

D

,I

--0 .1
7

Operation in this

5

area is limited by RDS(on).

Drain Current

3

Ta=25°C

2

Single pulse
1unit

Mounted on a ceramic board (900mm2×0.8mm)

--0.01

--1.0 --10

23 5 5723

Drain-to-Source Voltage, VDS–V

A S O

DC operation

100ms

10ms

1ms

≤10µs

IT01733

MCH6601

1.0

–W

0.8

D

0.6

0.4

0.2

Allowable Power Dissipation, P

0020 40

P

-- Ta

D

Mounted on a ceramic board (900mm

2

×0.8mm) 1unit

60 80 100 120 140 160

Ambient Temperature, Ta – ˚C

IT01734

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.

PS No.6458-4/4