Datasheet MCH3209, MCH3109 Datasheet (SANYO)

Ordering number : ENN7129

0.3

Preliminary

MCH3109 / MCH3209

PNP / NPN Silicon Epitaxial Planar Transistors

MCH3109 / MCH3209

DC / DC Converter Applications

Applications

•

Relay drivers, lamp drivers, motor drivers, strobes.

Package Dimensions

unit : mm

2194A

Features

•

Adoption of MBIT processes.

•

High current capacitance.

•

Low collector-to-emitter saturation voltage.

•

High-speed switching.

•

Ultrasmall package facilitates miniaturization in end

0.250.25

2.1

1.6

products (0.85mm).

•

High allowable power dissipation.

Specifications ( ) : MCH3109

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

B

C

Mounted on a ceramic board(600mm2✕0.8mm) 0.8 W

[MCH3109 / MCH3209]

3

12

0.65

2.0

(Bottom view)

0.07

0.85

12

(Top view)

0.15

3

1 : Base
2 : Emitter
3 : Collector

SANYO : MCPH3

(--30)40 V

(--)30 V

(--)5 V
(--)3 A
(--)5 A

(--)600 mA

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
Output Capacitance Cob VCB=(--)10V, f=1MHz (25)20 pF

Marking : MCH3109 : AJ / MCH3209 : CJ Continued on next page.

CBO
EBO

FE

VCB=(--)30V, IE=0 (--)0.1 µA
VEB=(--)4V, IC=0 (--)0.1 µA
VCE=(--)2V, IC=(--)500mA 200 560
VCE=(--)10V, IC=(--)500mA (380)450 MHz

T

min typ max

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N3001 TS IM TA-3372, 3373

No.7129-1/5

MCH3109 / MCH3209

Continued from preceding page.

Parameter Symbol Conditions

Collector-to-Emitter Saturation Voltage 120 180 mV

Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)1.5A, IB=(--)30mA (--)0.83 (--)1.2 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-ON Time t
Storage Time t
Fall Time t

VCE(sat)1 IC=(--)1.5A, IB=(--)30mA
VCE(sat)2 IC=(--)1.5A, IB=(--)750mA (--)105 (--)155 mV

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

on

stg

f

=(--)10µA, IE=0 (--30)40 V
=(--)1mA, RBE=∞ (--)30 V

=(--)10µA, IC=0 (--)5 V
See specified Test Circuit. (50)30 ns
See specified Test Circuit. (270)300 ns
See specified Test Circuit. (25)15 ns

min typ max

Switching Time Test Circuit

I

PW=20µs
D.C.≤1%

B1

I

B2

OUTPUT

Ratings

(--155) (--230) mV

Unit

INPUT

V

50Ω

R

IC=20IB1= --20IB2=500mA
(For PNP, the polarity is reversed.)

--2.0

40mA

--

--1.6

-- A
C

--1.2

50mA

--

--0.8

Collector Current, I

--0.4

0

0

30mA

--

--200 --400 --600 --800

Collector-to-Emitter Voltage, VCE -- mV

--3.5

--3.0

R

B

+

100µF 470µF

I

-- V

C

20mA

--

IC -- V

CE

BE

VCC=12VVBE= --5V

10mA

--

+

R

L

MCH3109

8mA

--

--6mA

--4mA

2mA

--

I

B

IT03993

MCH3109
VCE= --2V

=0

--1000

2.0

40mA

30mA

1.6

-- A
C

Collector Current, I

1.2

0.8

0.4

50mA

0

0

200 400 600 800

Collector-to-Emitter Voltage, VCE -- mV

3.5

3.0

10mA

20mA

I

-- V

C

8mA

IC -- V

CE

6mA

4mA

2mA

MCH3209

IB=0

1000

IT03994

BE

MCH3209
VCE=2V

--2.5

-- A
C

--2.0

°C

--1.5

Ta=75

--1.0

Collector Current, I

--0.5

0

0 --0.2 --0.4 --0.6 --0.8 --1.2--1.0

Base-to-Emitter V oltage, VBE -- V

2.5

-- A
C

2.0

°C

°C

25

--25

IT03995

1.5

1.0

Collector Current, I

0.5

0

0 0.2 0.4 0.6 0.8 1.21.0

Base-to-Emitter V oltage, VBE -- V

°C

°C

25

Ta=75

°C

--25

IT03996

No.7129-2/5

1000

7

Ta=75°C

5

3

FE

DC Current Gain, h

--25°C

2

100

7
5

3
2

25°C

h

FE

-- I

MCH3109 / MCH3209

h

C

MCH3109

VCE= --2V

1000

FE

7
5

3
2

Ta=75°C

--25°C

25°C

100

7
5

DC Current Gain, h

3
2

FE

-- I

C

MCH3209

VCE=2V

10

23 57

--0.01 --0.1

Collector Current, IC -- A

1000

7
5

3

-- MHz
T

2

100

7
5

3
2

Gain-Bandwidth Product, f

10

23 57

--10 --100

Collector Current, IC -- mA

2

100

7

5

23 57

f

-- I

T

23 57

Cob -- V

C

CB

--1.0

23 57

IT03997

MCH3109

VCE= --10V

23

--1000

IT03999

MCH3109

f=1MHz

--10

10

23 57

0.10.01

Collector Current, IC -- A

1000

7
5

3

-- MHz
T

2

100

7
5

3
2

Gain-Bandwidth Product, f

10

23 57

0.01 100

Collector Current, IC -- mA

2

100

7

5

23 57

f

-- I

T

23 57

Cob -- V

C

CB

1.0

23 57

IT03998

MCH3209

VCE=10V

23

1000

IT04000

MCH3209

f=1MHz

10

3

2

Output Capacitance, Cob -- pF

10

--1.0

--1.0
7
5

3
2

--0.1

(sat) -- V

7

CE

5
3

2

--0.01
7
5

3

Collector-to-Emitter

Saturation V oltage, V

2

--0.001

23 57

--10

Collector-to-Base Voltage, VCB -- V

VCE(sat) -- I

Ta=75°C

25°C

--25°C

23 57

23 57

--0.1--0.01

Collector Current, IC -- A

23 5

C

MCH3109
IC / IB=20

23 57

--1.0

IT04001

IT04003

--10

3

2

Output Capacitance, Cob -- pF

10

1.0

1.0
7
5

3
2

0.1

(sat) -- V

7

CE

5
3

2

0.01
7
5

3

Collector-to-Emitter

Saturation V oltage, V

2

0.001

23 57

10

Collector-to-Base Voltage, VCB -- V

VCE(sat) -- I

Ta=75°C

--25°C

25°C

23 57

23 57

0.10.01

Collector Current, IC -- A

23 5

C

MCH3209
IC / IB=20

23 57

1.0

IT04002

10

IT04004

No.7129-3/5

--10
7
5

3
2

--1.0

(sat) -- V

7

CE

5
3

2

--0.1
7
5

3

Collector-to-Emitter

Saturation V oltage, V

2

--0.01

--10
7
5

23 57

Collector Current, IC -- A

VCE(sat) -- I

Ta=75°C

--25°C

25°C

23 57

--0.1--0.01

VBE(sat) -- I

C

--1.0

C

MCH3109 / MCH3209

MCH3109
IC / IB=50

23 57

--10

IT04005 IT04006

MCH3109
IC / IB=50

10

7
5

3
2

1.0

(sat) -- V

7

CE

5
3

2

0.1
7
5

3

Collector-to-Emitter

Saturation V oltage, V

2

0.01

10

7
5

23 57

VCE(sat) -- I

Ta=75°C

23 57

0.10.01

Collector Current, IC -- A

VBE(sat) -- I

--25°C

C

25°C

1.0

C

MCH3209
IC / IB=50

23 57

MCH3209
IC / IB=50

10

3

(sat) -- V

2

BE

--1.0
7
5

3

Base-to-Emitter

Saturation V oltage, V

2

--0.1

-- A
C

Collector Current, I

0.01

23 57

10

7

ICP=5A

5

IC=3A

3
2

1.0
7
5

3
2

0.1

MCH3109 / MCH3209

7
5

Ta=25°C
Single pulse

3

For PNP, minus sign is omitted.

2

Mounted on a ceramic board (600mm

0.1

3

(sat) -- V

2

BE

°C

Ta= --25

75°C

--0.1--0.01

Collector Current, IC -- A Collector Current, IC -- A

25°C

23 57

--1.0

23 57

--10

IT04007 IT04008

A S O

1.0
7
5

3
2

Base-to-Emitter

Saturation V oltage, V

0.1

1.0

23 57

Ta= --25

75°C

0.10.01

100µs

1ms

10ms

100ms

DC operation

2

✕0.8mm)

23 57

1.0

23 57

Collector-to-Emitter Voltage, VCE -- V

10

500µs

23 5

IT04010

0.8

-- W
C

0.6

0.4

0.2

Collector Dissipation, P

0

0

Mounted on a ceramic board (600mm

50 100 150 200

Ambient Temperature, Ta -- °C

°C

25°C

23 57

P

-- Ta

C

1.0

2

✕0.8mm)

23 57

IT04011

10

No.7129-4/5

MCH3109 / MCH3209

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of November, 2001. Specifications and information herein are subject
to change without notice.

No.7129-5/5

PS