
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
TR:PNP Epitaxial Planar Silicon Transistor
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Ordering number:EN5100
FP108
Features
· Composite type with a PNP transistor and a Shottky
barrier diode contained in one package, facilitating
high-density mounting.
· The FP108 is formed with 2 chips, one being
equivalent to the 2SB1121 and the other the SB01015CP, placed in one package.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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]RT[
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
]DBS[
egatloVesreveRkaePevititepeRV
egatloVegruSesreveRkaePevititeper-noNV
tnerruCdeifitceRegarevAI
tnerruCdrawroFegruSI
erutarepmeTnoitcnuJjT 521+ot55–
erutarepmeTegarotSgtsT 521+ot55–
Marking:108
Electrical Connection
1:Base
2:Common
3:Emitter
4:Common
5:Anode
6:Common
7:Common
(Common:Collcector,
Cathode)
OBC
OEC
OBE
C
PC
B
Mounted on ceramic board (250mm2×0.8mm)
C
MRR
MSR
O
MSF
Package Dimensions
unit:mm
2088A
[FP108]
1:Base
2:Common
3:Emitter
4:Common
5:Anode
6:Common
7:Common
(Common:Collcector,
Cathode)
SANYO:PCP4
(Bottom view)
03–V
52–V
6–V
2–A
5–A
004–Am
3.1W
˚C
˚C
51V
71V
1A
elcyc1,evaweniszH05 8A
˚C
˚C
Continued on next page.
52098HA (KT)/63095MO (KOTO) TA-0316 No.5100-1/4

FP108
Continued from preceding page.
Electrical Characteristics at Ta=25˚C
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tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSE-CV
egatloVnoitarutaSE-BV
egatloVnwodkaerBB-CV
egatloVnwodkaerBE-CV
egatloVnwodkaerBB-EV
emiTNO-nruTt
emiTegarotSgtsttiucriCtseTdeificepseeS053sn
emiTllaFfttiucriCtseTdeificepseeS52sn
]DBS[
egatloVesreveRV
egatloVdrawroFV
tnerruCesreveRI
ecnaticapaClanimretretnICV
emiTyrevoceResreveRt
ecnatsiseRlamrehTa-jhtR 021
hEF1VECI,V2–=
hEF2VECI,V2–=
V
OBC
V
OBE
V
T
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
no
I
R
R
IFA1= 55.0V
F
VRV5.7= 05Aµ
R
R
IFI=
rr
Mounted on ceramic board (250mm2×0.8mm)
I,V02–=
BC
BE
EC
EC
R
0=1.0–Aµ
E
I,V4–=
0=1.0–Aµ
C
C
C
I,A5.1–=
B
I,A5.1–=
B
I,Aµ01–=
E
R,Am1–=
Aµ003=51V
Am001–=041004
A5.1–=56
I,V01–=
Am05–=051zHM
C
zHM1=f,V01–=23Fp
Am57–=53.0–6.0–V
Am57–=58.0–2.1–V
0=03–V
=∞ 52–V
EB
0=CI,Aµ01–=6–V
tiucriCtseTdeificepseeS06sn
zHM1=f,V01=03Fp
tiucriCtseTdeificepseeS,Am001= 01sn
nimpytxam
sgnitaR
tinU
˚C/W
Switching Time T est Circuit
(TR) (SBD)
No.5100-2/4

FP108
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.5100-4/4