Page 1
FDS86140
SO-8
D
D
D
D
S
S
S
G
Pin 1
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
N-Channel PowerTrench® MOSFET
100 V, 11.2 A, 9.8 mΩ
Features
Max r
Max r
High performance trench technologh for extremely low r
High power and current handing capability in a widely used
surface mount package
100% UIL Tested
RoHS Compliant
= 9.8 mΩ at VGS = 10 V, ID = 11.2 A
DS(on)
= 16 mΩ at VGS = 6 V, ID = 9 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been optimized for
ruggedness
.
Applications
DC/DC Converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Swith for 24 V and 48 V Systems
High Voltage Synchronous Rectifier
March 2011
®
process that has
r
, switching performance and
DS(on)
FDS86140 N-Channel PowerTrench
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDS86140 FDS86140 SO-8 13’’ 12
©2011 Fairchild Semiconductor Corporation
FDS86140 Rev.C
Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous 11.2
-Pulsed 50
Single Pulse Avalanche Energy (Note 3) 264 mJ
Power Dissipation TC = 25 °C (Note 1) 5.0
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Case (Note 1) 25
Thermal Resistance, Junction to Ambient (Note 1a) 50
= 25 °C unless otherwise noted
A
= 25 °C (Note 1a) 2.5
A
1
A
W
°C/W
mm 2500 units
www.fairchildsemi.com
Page 2
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage I
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current V
Gate to Source Leakage Current V
= 250 μA, VGS = 0 V 100 V
D
I
= 250 μA, referenced to 25 °C 70 mV/°C
D
= 80 V, V
DS
= ±20 V, V
GS
= 0 V1μA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, I
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance V
I
= 250 μA, referenced to 25 °C -11 mV/°C
D
= 10 V, ID = 11.2 A 8.19.8
V
GS
V
= 6 V, ID = 9 A 10.8 16
GS
= 10 V, I
V
GS
T
= 125 °C
J
= 10 V, ID = 11.2 A35S
DS
= 250 μA22.74V
D
= 11.2 A,
D
13.1 17
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 440 585 pF
Reverse Transfer Capacitance 20 30 pF
= 50 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 0.9 Ω
1940 2580 pF
mΩ
FDS86140 N-Channel PowerTrench
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On D elay Time
Rise Time 5.6 11 ns
Turn-Off Delay Time 23 38 ns
Fall Time 4.8 10 ns
To tal Gate Charge V
To tal Gate Charge V
Gate to Source Charge 8.0 nC
Gate to Drain “Miller” Charge 6.5 nC
= 50 V, ID = 11.2 A,
V
DD
V
= 10 V, R
GS
= 0 V to 10 V
GS
= 0 V to 5 V16.523nC
GS
GEN
Drain-Source Diode Characteristics
V
= 0 V, I
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR- 4 material. R
θJA
the user's board design.
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 59 94 nC
a) 50 °C/W wh en mounted on a
2
1 in
pad of 2 oz copper.
GS
= 0 V, IS = 2 A (Note 2) 0.7 1.2
V
GS
= 11.2 A, di/dt = 100 A/μs
I
F
= 11.2 A (Note 2) 0.8 1.3
S
= 6 Ω
V
DD
I
= 11.2 A
D
= 50 V,
is guaranteed by design while R
θJC
b) 125 °C/W when mounted on a
minimum pad.
13.7 25 ns
29 41 nC
53 85 ns
is determined by
θCA
V
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 1 mH, IAS = 23 A, VDD = 90 V, VGS = 10 V.
©2011 Fairchild Semiconductor Corporation
FDS86140 Rev.C
2
www.fairchildsemi.com
Page 3
FDS86140 N-Channel PowerTrench
01234
0
10
20
30
40
50
VGS = 7 V
VGS = 5 V
VGS = 10 V
PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 4.5V
VGS = 6 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0 1020304050
0
1
2
3
4
VGS = 4.5 V
PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
V
GS
= 7 V
VGS = 6 V
VGS = 5 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID = 11.2 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANC E
T
J
, JUNCTION TEMPERATURE (
o
C)
45678910
0
10
20
30
40
50
TJ = 125 oC
ID = 11.2 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VO LTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
23456
0
10
20
30
40
50
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURC E V OLTAGE (V)
0.0 0 .2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
®
MOSFET
Nor ma liz ed O n- Res istan ce
vs Drain Current and Gate Voltage
Fi gu re 3. Normalized On Resis ta nc e
vs Junction Temperature
©2011 Fairchild Semiconductor Corporation
FDS86140 Rev.C
Figure 5. Transfer Characteristics
Figure 4.
On-Resista nce vs Gate to
Source Voltage
Figure 6.
Source to Dra in Diode
Forward Voltage vs Source Current
3
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Page 4
FDS86140 N-Channel PowerTrench
0 6 12 18 24 30
0
2
4
6
8
10
V
DD
= 50 V
ID = 11.2 A
V
DD
= 25 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 75 V
0.1 1 10 100
10
100
1000
5000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
0.01 0.1 1 10 100
1
10
20
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVA LANC HE (ms)
I
AS
, AVALANCHE CURRENT (A)
25 50 75 100 125 150
0
3
6
9
12
V
GS
= 6 V
R
θJA
= 50 oC/W
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
A
, AMBIENT TEMPERATURE (
o
C)
0.01 0.1 1 10 100 500
0.01
0.1
1
10
80
10 s
100us
10 ms
DC
1 s
100 ms
1 ms
I
D
, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 125
o
C/W
T
A
= 25
o
C
10-410-310-210
-1
110
100 1000
0.5
1
10
100
1000
2000
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
Typical Characteristics T
Figure 7.
Gate Charge Characteristics Figure 8.
= 25 °C unless otherwise noted
J
®
MOSFET
Cap aci tan ce v s Dr ain
to Source Voltage
Figure 9.
Unc l amp ed I n duc tiv e
Switching Capability
©2011 Fairchild Semiconductor Corporation
FDS86140 Rev.C
Figure 11. Forward Bias Safe
Op
erating Area
Figure 10.
Maximum Continu ous Dr ain
Current vs Ambient Temperature
Figure 12.
Singl e Pulse Ma ximum
Power Dissipation
4
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Page 5
FDS86140 N-Channel PowerTrench
10
-4
10
-3
10
-2
10
-1
110
100 1000
0.0005
0.001
0.01
0.1
1
2
SINGLE PULSE
R
θJA
= 125 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t1/t
2
PEAK TJ = PDM x Z
θJA
x R
θJA
+ T
A
Typical Characteristics T
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
= 25 °C unless otherwise noted
J
®
MOSFET
©2011 Fairchild Semiconductor Corporation
FDS86140 Rev.C
5
www.fairchildsemi.com
Page 6
TRADEMARKS
tm
®
tm
tm
The following includes registered and unregistered trademar ks and service marks, owned by Fair child Semicondu ctor and/or its glo bal subsidiaries, and is no t
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
AX-CAP™*
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
®
®
ESBC™
®
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
®
FACT
®
FAST
FastvCore™
FETBench™
FlashWriter
®
*
FPS™
®
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
OptiHiT™
OPTOLOGIC
OPTOPLANAR
®
®
®
PDP SPM™
Power-SPM™
PowerTrench
SM
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™
®*
®
®
™
®
®
®
The Power Franchise
The Right Technology for Y our Success™
®
TinyBoost™
TinyBuck™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT
μSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
®
®
*
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDS86140 N-Channel PowerTrench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the indust ry. All manufactures of semiconductor products are experiencin g counterfeiting of their
parts. Customers who inadvertently purchase counte rfe it parts e xpe rien ce many probl ems such as loss of b rand reputa tio n, subst andard p erf orman ce, fai led
application, and increased cost of production and manufacturing del ays. Fairch ild is taking stro ng measure s to prot ect ourselves and our customers fro m the
proliferation of counterfeit parts. Fairchild strongly encou rages customer s to purchase Fairchild parts either direct ly from Fairchild or from Authorized Fairchild
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
©2011 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I53
FDS86140 Rev.C
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