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G
FDS6692
FDS6692
30V N-Channel PowerTrench MOSFET
September 2003
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
and fast switching speed.
DS(ON)
Applications
• DC/DC converter
D
D
D
D
S
SO-8
Absolute Maximum Ratings T
S
S
o
=25
C unless otherwise noted
A
Features
• 12 A, 30 V. R
R
• High performance trench technology for extremely
low R
• Low gate charge (18 nC typical)
• High power and current handling capability
DS(ON)
5
6
7
8
= 12 mΩ @ VGS = 10 V.
DS(ON)
= 14.5 mΩ @ VGS = 4.5 V
DS(ON)
4
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) 12 A
– Pulsed 50
PD
TJ, T
STG
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range -55 to +175
± 16
1.2
1.0
°C
V
W
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
Thermal Resistance, Junction-to-Ambient (Note 1c) 125
Thermal Resistance, Junction-to-Case (Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2003 Fairchild Semiconductor Corporation
FDS6692 FDS6692 13’’ 12mm 2500 units
°C/W
°C/W
°C/W
FDS6692 Rev D (W)
Page 2
FDS6692
Electrical Characteristics T
Symbol
Parameter Test Conditions Min Typ Max Units
= 25°C unless otherwise noted
A
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆TJ
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
Gate–Body Leakage, Forward VGS = 16 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –16 V, VDS = 0 V –100 nA
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
30 V
26
mV/°C
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
D(on)
gFS Forward Transconductance VDS = 5 V, ID = 12 A 50 S
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 12 A
VGS = 4.5 V, ID = 11 A
VGS = 10 V, ID = 12 A, TJ = 125°C
1 1.6 3 V
–5
9.5
11.5
14
mV/°C
12
14.5
Dynamic Characteristics
C
Input Capacitance 2164 pF
iss
C
Output Capacitance 357 pF
oss
C
Reverse Transfer Capacitance
rss
VDS = 15 V, V
f = 1.0 MHz
= 0 V,
GS
138 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 9 18 ns
d(on)
tr Turn–On Rise Time 5 10 ns
t
Turn–Off Delay Time 35 56 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 18 25 nC
Qgs Gate–Source Charge 5 nC
Qgd Gate–Drain Charge
VDD = 15 V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
VDS = 15 V, ID = 12 A,
VGS = 5 V
10 20 ns
5 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A
VSD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
θCA
VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V
is determined by the user's board design.
µA
mΩ
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted
on a minimum pad.
FDS6692 Rev D (W)
Page 3
, DRAIN CURRENT (A)
4.5V
2.5V
6.0V
4.5V
10V
, DRAIN CURRENT (A)
25oC
125oC
, REVERSE DRAIN CURRENT (A)
FDS6692
Typical Characteristics
50
VGS = 10V
40
30
20
D
I
10
0
0 0.5 1 1.5 2 2.5
3.5V
VDS, DRAIN-SOURCE VOLTAGE (V)
3.0V
2.25
2
1.75
, NORMALIZED
1.25
DS(ON)
R
DRAIN-SOURCE ON-RESISTANCE
0.75
VGS = 3.0V
1.5
3.5V
6.0V
1
0 10 20 30 40 50
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
ID = 12A
1.6
VGS = 10V
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
0.03
0.025
0.02
0.015
, ON-RESISTANCE (OHM)
0.01
DS(ON)
R
0.005
TA = 25oC
2 4 6 8 10
TA = 125oC
VGS, GATE TO SOURCE VOLTAGE (V)
ID = 6 A
Figure 3. On-Resistance Variation with
Temperature.
50
VDS = 5V
40
30
20
D
I
10
0
1.5 2 2.5 3 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
TA = -55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
TA = 125oC
25oC
-55oC
VSD, BODY DIODE FORWARD VOLTAGE (V)
with Source Current and Temperature.
FDS6692 Rev D (W)
Page 4
CAPACITANCE (pF)
, DRAIN CURRENT (A)
1s
1ms
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
P(pk)
0.01
0.02
0.05
0.1
FDS6692
Typical Characteristics
10
ID = 12A
8
6
4
2
, GATE-SOURCE VOLTAGE (V)
GS
V
0
0 5 10 15 20 25 30 35
Qg, GATE CHARGE (nC)
VDS = 10V
20V
15V
3000
2500
2000
1500
1000
C
500
C
RSS
0
0 5 10 15 20 25 30
OSS
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100
R
LIMIT
DS(ON)
10
100ms
1
VGS = 10V
SINGLE PULSE
0.1
D
I
R
= 125oC/W
θ
JA
TA = 25oC
0.01
0.01 0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
DC
10s
100µs
10ms
50
R
40
30
20
10
0
0.001 0.01 0.1 1 10 100
t1, TIME (sec)
θJA
f = 1MHz
VGS = 0 V
= 125°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.01
SINGLE PULSE
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
R
(t) = r(t) + R
θ
JA
R
= 125 °C/W
θJA
TJ - TA = P * R
Duty Cycle, D = t1 / t
θ
t
1
t
2
θ
JA
FDS6692 Rev D (W)
JA
(t)
2
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