Page 1
FDS6692A
N-Channel PowerTrench
30V, 9A, 11.5mΩ
®
MOSFET
FDS6692A N-Channel PowerTrench
January 2010
Features
R
R
High performance trench technology for extremely low
Low gate charge
High power and current handling capability
RoHS Compliant
DS(ON)
DS(ON)
R
DS(ON)
= 11.5mΩ, V
= 14.5mΩ, V
= 10V, ID = 9A
GS
= 4.5V, ID = 8.2A
GS
Applications
DC/DC converters
D
D
D
D
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
R
and fast switching speed.
DS(ON)
5
6
4
3
®
MOSFET
SO-8
©2010 Fairchild Semiconductor Corporation
FDS6692A Rev. A
2
G
S
S
S
7
8
2
1
www.fairchildsemi.com1
Page 2
FDS6692A N-Channel PowerTrench
MOSFET Maximum Ratings T
= 25°C unless otherwise noted
A
Symbol Parameter Ratings Units
V
DSS
V
GS
Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current
I
D
Continuous (T
Continuous (T
= 25oC, VGS = 10V, R
A
= 25oC, VGS = 4.5V, R
A
= 85oC/W)
θJA
= 85oC/W) 8.2 A
θJA
9A
Pulsed 48 A
E
AS
P
D
, T
T
J
STG
Single Pulse Avalanche Energy (Note 1) 79 mJ
Power dissipation 1.47 W
Operating and Storage Temperature -55 to 150
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) 50
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 85
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDS6692A FDS6692A SO-8 330mm 12mm 2500 units
Electrical Characteristics T
Symbol Parameter Test Conditions Min Typ Max Units
= 25°C unless otherwise noted
J
o
C/W
o
C/W
o
C
®
MOSFET
Off Characteristics
B
∆B
∆T
I
DSS
I
GSS
VDSS
VDSS
J
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current VGS = ±20V - - ±100 nA
On Characteristics
V
GS(TH)
∆V
∆T
R
DS(ON)
GS(TH)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 - 2.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
R
G
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance - 330 440 pF
Reverse Transfer Capacitance - 138 210 pF
Gate Resistance f = 1MHz - 2.0 - Ω
Total Gate Charge at 10V VGS = 0V to 10V
Total Gate Charge at 5V VGS = 0V to 5V - 12 16 nC
Threshold Gate Charge VGS = 0V to 1V - 0.93 1.2 nC
Gate to Source Gate Charge - 3 - nC
Gate Charge Threshold to Plateau - 2.1 - nC
Gate to Drain “Miller” Charge - 4.8 - nC
I
= 250µA,
D
Referenced to 25
V
= 24V - - 1
DS
= 0V TJ = 150oC - - 250
V
GS
ID = 250µA,
Referenced to 25
= 9A, VGS = 10V - 8.2 11.5
I
D
I
= 8.2A, VGS = 4.5V - 11 14.5
D
= 9A, VGS = 10V,
I
D
= 150oC
T
J
= 15V, VGS = 0V,
V
DS
f = 1MHz
o
C
o
C
-21-mV/
--5-mV/
-1319
- 1210 1610 pF
-2229nC
= 15V
V
DD
I
= 9A
D
= 1.0mA
I
g
µA
mΩ
o
C
o
C
FDS6692A Rev. A2
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Page 3
Switching Characteristics (V
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time - 8 - ns
Rise Time - 32 - ns
Turn-Off Delay Time - 33 - ns
Fall Time - 13 - ns
Turn-Off Time - - 69 ns
GS
= 10V)
= 15V, ID = 9A
V
DD
= 10V, RGS = 6.2Ω
V
GS
- - 60 ns
Drain-Source Diode Characteristics
I
= 9A - - 1.25 V
V
SD
t
rr
Q
RR
Notes:
1: Starting T
2: R
θJA
mounting surface of the drain pins. R
3: R
θJA
Source to Drain Diode Voltage
Reverse Recovery Time ISD = 9A, dISD/dt=100A/µs- -27ns
Reverse Recovered Charge ISD = 9A, dISD/dt=100A/µs- -17nC
= 25°C, L = 0.3mH, IAS = 23A, VDD = 27V, VGS = 10V.
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
is measured with 1.0 in2 copper on FR-4 board
is guaranteed by design while R
θJC
SD
= 2.1A - - 1.0 V
I
SD
is determined by the user’s board design.
θJA
FDS6692A N-Channel PowerTrench
®
MOSFET
FDS6692A Rev. A2
www.fairchildsemi.com3
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FDS6692A N-Channel PowerTrench
Typical Characteristics T
24
21
18
15
12
9
6
, DRAIN CURRENT (A)
D
I
3
0
00.2 0.5
Figure 1.
1.6
1.4
1.2
NORMALIZED
1.0
DS(ON),
R
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
- 80 40 160
0.1
VDS, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics
ID = 9A
VGS =10V
TJ, JUNCTION TEMPERATURE (oC)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0- 40 80 120
= 25°C unless otherwise noted
J
WAVE FORM S
IN DESCENDING
ORDER:
10V
5.0V
4.0V
3.5V
3.0V
0.3
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.4
2.8
2.6
2.4
3.0V
2.2
2
1.8
, NORMALIZED
1.6
DS(ON)
R
1.4
1.2
DRAIN TO SOURCE ON-RESISTANCE
1
0.8
012
Figure 2.
3.5V
4.0V
6
ID, DRAIN CURRENT (A)
On-Resistance Variation with Drain
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
4.5V
5.0V
Current and Gate Voltage
0.02
, ON-RESISTANCE (OHM)
DS(ON)
R
0.008
0.006
0.018
0.016
0.014
0.012
0.01
ID =9A
TJ =25oC
428
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
6
20
TJ =150oC
10V
24
®
MOSFET
10
Figure 3.
24
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
21
18
VDS = 6V
15
12
9
, DRAIN CURRENT (A)
D
I
6
3
0
0
Figure 5.
FDS6692A Rev. A2
On Resistance Variation with
Temperature
TJ = 25oC
TJ = 150oC
TJ = -55oC
1
VGS, GATE TO SOURCE VOLTAGE (V)
2
3
4
, REVERSE CURRENT (A)
S
I
Transfer Characteristics Figure 6.
Figure 4.
On-Resistance Variation with
Gate-to-Source Voltage
100
IS = 9A
10
1
0.1
0.01
0.001
TJ = 150oC
TJ = 25oC
= - 55oC
T
J
0 0.6 0.8 1.0
0.2
0.4
VSD, BODY DIODE FORWARD VOLTAGE
Body Diode Forward Voltage Variation
With Source Current and Temperature
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1.2
Page 5
FDS6692A N-Channel PowerTrench
Typical Characteristics T
10
VDD =15V
8
6
4
, GATE- SOURCE VOLTAGE
GS
2
V
0
10
5015
Qg, GATE CHARGE (nC)
J
WAVEFORMS IN
DESCENDING ORDER:
ID = 9A
ID = 1A
Figure 7. Gate Charge Characteri
20
10
TJ = 25 oC
TJ = 150 oC
, AVALANCHE CURRENT (A)
AS
I
1
0.01 0.1 1 10 100 1000
tAV, TIME IN AVALANCHE (ms)
= 25°C unless otherwise noted
2000
1000
f = 1MHz
VGS = 0V
CAPACITANCE (pF)
20
25
100
0.03
0.1
VDS, DRAIN TO SOURCE VOLTAGE (V)
1
stics Figure 8. Capacitance Characteristics
100
10
TJ = 100 oC
1
OPERATION IN THIS
AREA MAY BE LIMITED
, DRAIN TCURRENT (A)
BY R
D
I
0.1
SINGLE PULSE
TJ = MAX RATED
TA = 25oC
0.01
0.1
DS(ON)
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
10
30
®
MOSFET
100µs
1ms
10ms
DC
10
100
Figure 9. Unclamped Inductive Switching
Capability
10
9
8
7
6
5
4
, DRAIN TCURRENT (A)
3
D
I
2
1
0
075 150
CURRENT LIMITED
BY PACKAGE
VGS = 4.5V
R
= 85oC/W
θJA
50
TA, AMBIENT TEMPERATURE (oC)
100
VGS = 10V
125
Figure 11. Maximum Continuous Drain Current vs
Ambient Temperature
FDS6692A Rev. A2
Figure 10.
2000
Safe Operating Area
1000
SINGLE PULSE
= 85 oC/W
R
θJA
T
100
= 25oC
A
10
, PEAK TRANSIENT POWER (W)
(PK)
P
1
10-510-410-310-210-110010110210
t, PULSE WIDTH (s)
Figure 12. Single Maximum Power Dissipation
www.fairchildsemi.com5
3
Page 6
2
D = 0.5
1
0.2
0.1
0.05
0.02
θJA
0.01
0.1
0.01
impedance Z
Normalized Thermal
1E-3
-5
10
-4
10
SINGLE PULSE
-3
10
-2
10
-1
10
0
10
t Rectangular Pulse Duration
Figure 13. Transient Thermal Response Curve
P
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x R
1
10
FDS6692A N-Channel PowerTrench
DM
t
1
t
2
1/t2
+ T
θ
JA
C
2
10
3
10
®
MOSFET
FDS6692A Rev. A2
www.fairchildsemi.com6
Page 7
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDS6692A N-Channel PowerTrench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FDS6692A Rev. A2
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
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Rev. I46
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