Datasheet FDS8962C Datasheet (Fairchild)

■

± 20 ±

° C

θ

°

θ

°

FDS8962C Dual N & P-Channel PowerTrench

June 2006

FDS8962C Dual N & P-Channel PowerTrench

®

MOSFET

Features

Q1: N-Channel

7.0A, 30V R R

Q2: P-Channel

-5A, -30V R R

Fast switching speed

High power and handling capability in a widely used surface mount package

Absolute Maximum Ratings

= 0.030 Ω @ V

DS(on)

= 0.044 Ω @ V

DS(on)

= 0.052 Ω @ V

DS(on)

= 0.080 Ω @ V

DS(on)

D1

SO-8

D1

D2

Pin 1

D2

= 10V

GS

= 4.5V

GS

= -10V

GS

= -4.5V

GS

S1

G2

S2

G1

T

= 25°C unless otherwise noted

A

General Description

These dual N- and P-Channel enhancement mode power ﬁeld effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Q2

5

6

Q1

7

8

4

3

2

1

Symbol Parameter Q1 Q2 Units

V

DSS

V

GSS

I

D

P

D

T

, T

J

Thermal Characteristics

R

JA

R

JC

Drain-Source Voltage 30 -30 V

Gate-Source Voltage

Drain Current – Continuous (Note 1a) 7 -5 A

– Pulsed 20 -20

Power Dissipation for Dual Operation 2 W

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b) 1

(Note 1c) 0.9

Operating and Storage Junction Temperature Range -55 to +150

STG

Thermal Resistance, Junction-to-Ambient (Note 1a) 78

Thermal Resistance, Junction-to-Case (Note 1) 40

20 V

C/W

®

MOSFET

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS8962C FDS8962C 13” 12mm 2500 units

FDS8962C Rev. A1

1

www.fairchildsemi.com

∆

µ

∆

Ω

Electrical Characteristics

T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

DSS

BV

∆ T

I

DSS

I

GSSF

I

GSSR

On Characteristics (Note 2)

V

GS(th)

V

∆ T

R

DS(on)

I

D(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

R

G

Switching Characteristics (Note 2)

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Breakdown Voltage V

DSS

Breakdown Voltage Temperature Coefﬁcient

J

Zero Gate Voltage Drain Current V

Gate-Body Leakage, Forward V

Gate-Body Leakage, Reverse V

Gate Threshold Voltage V

Gate Threshold Voltage Temperature Coefﬁcient

J

Static Drain-Source On-Resistance

On-State Drain Current V

Forward Transconductance V

= 0 V, I

GS

V

= 0 V, I

GS

I

= 250 µ A, Referenced to 25 ° C

D

I

= -250 µA, Referenced to 25 ° C

D

= 24 V, V

DS

V

= -24 V, V

DS

= 20 V, V

GS

= -20 V, V

GS

= V

DS

V

= V

DS

I

= 250 µ A, Referenced to 25 ° C

D

I

= -250 µA, Referenced to 25 ° C

D

V

= 10 V, I

GS

V

= 10 V, I

GS

V

= 4.5 V, I

GS

V

= -10 V, I

GS

V

= -10 V, I

GS

V

= -4.5 V, I

GS

= 10 V, V

GS

V

= -10 V, V

GS

= 5 V, I

DS

V

= -5 V, I

DS

= 250 µ A

D

= -250 µ A

D

= 0 V

GS

= 0 V

GS

= 0 V All 100 nA

DS

= 0 V All -100 nA

DS

, I

= 250 µ A

GS

D

, I

= -250 µA

GS

D

= 7 A

D

= 7 A, T

D

= 6 A

D

= -5 A

D

= -5 A, T

D

DS

= 7 A

D

=-5 A

D

= -4 A

= 5 V

= -5 V

= 125 ° C

J

Input Capacitance Q1

V

= 15 V, V

DS

Output Capacitance Q1

Reverse Transfer Capacitance Q1

Gate Resistance V

Q2 V

= -15 V, V

DS

= 15 mV, f = 1.0 MHz Q1

GS

= 0 V, f = 1.0 MHz

GS

= 0 V, f = 1.0 MHz

GS

Tu r n-On Delay Time Q1

V

= 15 V, I

DD

Tu r n-On Rise Time Q1

VGS = 10V, R

= 1 A,

D

GEN

= 6 Ω

Q2

Tu r n-Off Delay Time Q1

VDD = -15 V, ID = -1 A, VGS = -10V, R

GEN

= 6 Ω

Tu r n-Off Fall Time Q1

Total Gate Charge Q1

VDS = 15 V, ID = 7 A, VGS = 10 V

Gate-Source Charge Q1

Q2 VDS = -15 V, ID = -5 A,VGS = -10 V

Gate-Drain Charge Q1

= 125 ° C

Q1 Q2

30

-30

25

-23

Q1 Q2

1

1.9

-1

-1.7

-4.5

4.5

Q1 21

29 26

Q2 42

57 65

Q1 Q2

20

-20

25 10

575 528

145

Q2

132

65

Q2

70

2.1

Q2

6.0

Q1 Q2

Q2

13

23

Q2

14

Q2

Q1 Q2

10.7

9.6

1.7

Q2

2.2

2.1

Q2

1.7

mV/ ° C

1

-1

3

-3

mV/ ° C

30

m Ω 46 44

52 78 80

pF

8 7

5

16 14

10

ns

24

37

ns

25

3 9

17

26

6

ns

nC

13

nC

FDS8962C Dual N & P-Channel PowerTrench

V

A

V

®

MOSFET

A

S

FDS8962C Rev. A1

2

www.fairchildsemi.com

FDS8962C Dual N & P-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted (Continued)

A

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

t

rr

Q

rr

Notes:

1. R

θJA

R

θJC

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

Maximum Continuous Drain-Source Diode Forward Current Q1

Q2

Drain-Source Diode Forward Voltage

Diode Reverse Recovery Time Q1

Diode Reverse Recovery Charge Q1

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is deﬁned as the solder mounting surface of the drain pins. is guaranteed by design while R

a) 78°/W when mounted

is determined by the user's board design.

θCA

2

on a 0.5 in copper

pad of 2 oz

VGS = 0 V, IS = 1.3 A (Note 2) VGS = 0 V, IS = -1.3 A (Note 2)

IF = 7 A, diF/dt = 100 A/µs Q2 IF = -5 A, diF/dt = 100 A/µs

b) 125°/W when mounted

on a .02 in copper

2

pad of 2 oz

Q1 Q2

Q2

0.75

-0.88

19 19

1.3

-1.3

1.2

-1.2

9 6

c) 135°/W when mounted

on a minimum pad.

nS

nC

A

V

®

MOSFET

FDS8962C Rev. A1

3 www.fairchildsemi.com

Typical Characteristics: Q1 (N-Channel)

FDS8962C Dual N & P-Channel PowerTrench

20

VGS = 10.0V

16

6.0V

12

8

, DRAIN CURRENT (A)

D

I

4

0

0 0.5 1 1.5 2

4.0V

4.5V

V

, DRAIN-SOURCE VOLTAGE (V)

DS

3.5V

3.0V

Figure 1. On-Region Characteristics.

1.6

ID = 7A

V

= 10.0V

GS

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

2.2

1.8

VGS = 3.5V

1.4

, NORMALIZED

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.6 04 8121620

4.0

4.5V

, DRAIN CURRENT (A)

I

D

5.0

6.0V

10.0V

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.08

0.07

0.06

0.05

0.04

, ON-RESISTANCE (OHM)

0.03

TA = 25°C

DS(ON)

0.02

R

0.01 246810

TA = 125°C

V

, GATE TO SOURCE VOLTAGE (V)

GS

ID = 3.5A

®

MOSFET

Figure 3. On-Resistance Variation with

Temperature.

20

VDS = 5V

16

12

8

, DRAIN CURRENT (A)

D

I

4

0

1.5 2 2.5 3 3.5 4

V

GS

TA = 125°C

, GATE TO SOURCE VOLTAGE (V)

-55°C

25°C

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001 0 0.2 0.4 0.6 0.8 1 1.2

TA = 125°C

25°C

, BODY DIODE FORWARD VOLTAGE (V)

V

SD

-55°C

with Source Current and Temperature.

FDS8962C Rev. A1

4 www.fairchildsemi.com

Typical Characteristics: Q1 (N-Channel)

FDS8962C Dual N & P-Channel PowerTrench

10

ID = 7A

8

6

4

2

, GATE-SOURCE VOLTAGE (V)

GS

V

0

0 24681012

, GATE CHARGE (nC)

Q

g

VDS = 10V

20V

15V

Figure 7. Gate Charge Characteristics.

100

R

LIMIT

DS(ON)

10

1

, DRAIN CURRENT (A)

D

I

0.01

VGS = 10V

SINGLE PULSE

0.1

θ

R

= 135°C/W

JA

T

= 25°C

A

0.1 1 10 100

V

DS

10s

DC

, DRAIN-SOURCE VOLTAGE (V)

1s

10ms

100ms

100µs

1ms

800

f = 1MHz

V

GS

600

C

iss

400

C

CAPACITANCE (pF)

200

C

rss

0

051015 20

V

oss

, DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 8. Capacitance Characteristics.

50

SINGLE PULSE

θ

R

= 135°C/W

40

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100 1000

t

, TIME (sec)

1

JA

T

A

= 25°C

= 0 V

®

MOSFET

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

FDS8962C Rev. A1

5 www.fairchildsemi.com

Typical Characteristics: Q2 (P-Channel)

FDS8962C Dual N & P-Channel PowerTrench

30

VGS = -10V

20

10

, DRAIN CURRENT (A)

D

-I

0

0123456

-6.0V

-5.0V

-4.5V

-4.0V

-3.5V

-VDS, DRAIN TO SOURCE VOLTAGE (V)

-3.0V

Figure 11. On-Region Characteristics.

1.6

ID = -5A

V

= -10V

GS

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

2

1.8

VGS=-4.0V

1.6

1.4

, NORMALIZED

1.2

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8 061218 24 30

-4.5V

-5.0V

-6.0V

-ID, DRAIN CURRENT (A)

-7.0V

-8.0V

-10V

Figure 12. On-Resistance Variation with

Drain Current and Gate Voltage.

0.25

0.2

0.15

0.1

, ON-RESISTANCE (OHM)

TA = 25°C

0.05

DS(ON)

R

0

246810

TA = 125°C

, GATE TO SOURCE VOLTAGE (V)

-V

GS

ID = -2.5A

®

MOSFET

Figure 13. On-Resistance Variation with

Temperature.

15

VDS = -5V

12

9

6

, DRAIN CURRENT (A)

D

3

-I

0

1 1.5 2 2.5 3 3.5 4 4.5

, GATE TO SOURCE VOLTAGE (V)

-V

GS

TA = -55oC

125oC

Figure 15. Transfer Characteristics.

25oC

Figure 14. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS =0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

-I

0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

25oC

-55oC

-V

, BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 16. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS8962C Rev. A1

6 www.fairchildsemi.com

Typical Characteristics: Q2 (P-Channel)

FDS8962C Dual N & P-Channel PowerTrench

10

ID = -5A

8

VDS = -5V

-10V

-15V

6

4

2

, GATE-SOURCE VOLTAGE (V)

GS

-V

0

0246810

, GATE CHARGE (nC)

Q

g

Figure 17. Gate Charge Characteristics.

100

R

LIMIT

DS(ON)

10

1

VGS = -10V

SINGLE PULSE

, DRAIN CURRENT (A)

0.1

D

θ

R

= 125°C/W

-I

JA

T

= 25°C

A

0.01

0.1 1 10 100

DC

10s

1s

100ms

10ms

-VDS, DRAIN-SOURCE VOLTAGE (V)

100µs

1ms

800

700

600

500

400

300

CAPACITANCE (pF)

200

100

0

05101520 25 30

C

oss

C

rss

-V

, DRAIN TO SOURCE VOLTAGE (V)

DS

C

f = 1 MHz

= 0 V

V

GS

iss

Figure 18. Capacitance Characteristics.

50

40

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100 1000

t

, TIME (sec)

1

SINGLE PULSE

θ

R

= 125°C/W

JA

T

= 25°C

A

®

MOSFET

Figure 19. Maximum Safe Operating Area.

Figure 20. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.2

0.1

0.01

0.1

0.05

0.02

0.01

SINGLE PULSE

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.001

0.0001 0.001 0.01 0.1 1 10 100 1000

, TIME (sec)

t

1

θ

R

(t) = r(t) * R

JA

θ

R

= 135°C/W

JA

P(pk)

t

1

T

- TA = P * R

J

Duty Cycle, D = t

Figure 21. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

θ

JA

t

2

θ

(t)

JA

/ t

1

2

FDS8962C Rev. A1

7 www.fairchildsemi.com

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™

2

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E EnSigna™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise Programmable Active Droop™

®

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®

OPTOPLANAR™ PACMAN™ POP™ Power247™

PowerEdge™ PowerSaver™ PowerTrench QFET

®

QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ μSerDes™ ScalarPump™ SILENT SWITCHER SMART START™ SPM™ Stealth™

SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UniFET™

®

UltraFET VCX™ Wire™

®

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identif ica tion Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I19