Datasheet FDS8433A Datasheet (Fairchild Semiconductor)

FDS8433A

Single P-Channel 2.5V Specified MOSFET

FDS8433A

October 1998

PRELIMINARY

General Description

This P-Channel enhancement mode power field effect
transistors is produced using Fairchild’s proprietary,
high cell density, DMOS technology. This very high
density processis especially tailored to minimize
on-state resistance and provide superior switching
performance.

Applications

• Load switch

• DC/DC converter

• Battery protection

D

D

D

D

G

S

SO-8

Absolute Maximum Ratings

S

S

TA = 25°C unless otherwise noted

Features

• -5 A, -20 V. R

R

= 0.045 Ω @ V

DS(on)

= 0.070 Ω @ V

DS(on)

= -4.5 V

GS

= -2.5 V

GS

• Fast switching speed.

• High density cell design for extremely low R

• High power and current handling capability.

5

6
7

8

4

3
2
1

DS(on)

.

Symbol Parameter FDS8433A Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage -20 V
Gate-Source Voltage
Drain Current - Continuous

- Pulsed -50

Power Dissipation for Si ngl e Operat i on

Operating and Storage Junction Temperature Range -55 to +150

(Note 1a)

(Note 1a)
(Note 1b)

(Note 1c)

8V

±

-5 A

2.5 W

1.2
1

Thermal Characteristics

R

JA

θ

R

JC

θ

Thermal Resistance, J unc tion-to-Ambient
Thermal Resistance, J unc tion-to-Case

(Note 1a)
(Note 1)

50
25

Package Outlines and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

FDS8433A FDS8433A 13’’ 12mm 2500 units

1998 Fairchild Semiconductor Corporation

C

°

C/W

°

C/W

°

FDS8433A Rev. B1

FDS8433A

yp

DMOS Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min T
Off Characteristics

BV

DSS

DSS

BV

T

∆

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

GS(th)

V

∆

T

∆

R

DS(on)

I

D(on)

g

FS

Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA-20 V
Breakdown Voltage Temperature

Coefficient

J

ID = -250 µA, Referenced to 25°C-25 mV/

Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1
Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA

(Note 2)

Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.4 -0.6 -1 V
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain-Source
On-Resistance

ID = -250 µA, Referenced to 25°C4 mV/

VGS = -4.5 V, ID = -5 A
V

= -4.5 V, ID = -5 A, TJ=125°C

GS

V

= -2.5 V, ID = -4.3 A

GS

On-State Drain Current VGS = -4.5 V, VDS = -5 V -25 A
Forward Transconductance VDS = -5 V, ID = -5 A 16 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 1130 pF
Output Capacitance 480 pF

= -10 V, VGS = 0 V,

V

DS

f = 1.0 MHz

Reverse Transfer Capacitance

Max Units

0.045

0.036

0.085

0.050

0.070

0.047

120 pF

C

°

A

µ

C

°

Ω
Ω
Ω

(Note 2)

Switching Characteristics

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

g

gs

gd

Turn-On Delay Time 8 16 ns
Turn-On Rise Time 23 37 ns
Turn-Off Delay Time 260 360 ns
Turn-Off Fall Time
Total Gate Charge 20 28 nC
Gate-Source Charge 2.8 nC
Gate-Drain Charge

V

= -10 V, ID = -1 A,

DD

V

= -4.5 V, R

GS

= -5 V, ID = -5 A,

V

DS

V

= -5 V,

GS

GEN

= 6

Ω

90 125 ns

3.2 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:
1: R

θJA

drain pins. R

Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Maximum Continuous Drain-Source Diode Forward Current -2.1 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.1 A

is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the

is guaranteed by design while R

θJC

a) 50° C/W when

mounted on a 1 in
pad of 2 oz. copper.

is determined by the user's board design.

θJA

2

b) 105° C/W when

mounted on a 0.04 in
pad of 2 oz. copper.

(Note 2)

2

-0.8 -1.2 V

c) 125° C/W when mounted
on a 0.006 in2 pad
of 2 oz. copper.

FDS8433A Rev. B1

T ypical Characteristics

FDS8433A

50

40

30

20

10

D

- I , DRAIN-SOURCE CURRENT (A)
0

012345

V = -4.5V

GS

-3.5V

-3.0V

-2.5V

-V , DRAIN-SOURCE VOLTAGE (V)

DS

-2.0V

-1.5V

2

1.8

V = -2 .0V

GS

1.6

1.4

1.2

DS( o n)

R , NOR MA LIZ ED

1

DRAIN-SO URCE ON-RESI STAN CE

0.8
0 1020304050

-2.5V

-3.0V

-3.5V

-4.0V

- I , DRAIN CURRENT (A)

D

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation

with Drain Current and Gate V oltage.

1.6

I = -5A

D

V = -4.5V

GS

1.4

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

0.15

0.12

0.09

0.06

0.03

DS(ON)

R , ON-R E SISTA N CE (OHM)

0

12345

-V , GATE TO S OURCE VOLT AG E ( V)

GS

-4.5V

T = 125°C

J

I = -2.5A

D

25° C

Figure 3. On-Resistance Variation

with Temperature.

10

V = -5V

DS

8

6

4

D

- I , DRAIN CURRENT ( A)

2

0

0.4 0.8 1.2 1.6 2

-V , GA TE TO SOURCE V OLTAGE (V)

GS

T = -55 °C

J

25°C

125°C

Figure 5. Transfer Characteristics.

Figure 4. On-Resistance Variation

with Gate-to-Source Voltage.

10

V = 0V

GS

3
1

T =1 25° C

J

25°C

0.1

0.01

S

- I , REVERS E DRAI N CURRENT (A)

0.001
0 0.2 0.4 0.6 0. 8 1 1.2

-V , BODY DI ODE FORWARD VOLT AGE (V)

SD

-55°C

Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

FDS8433A Rev. B1

Typical Characteristics (continued)

g

FDS8433A

5

I =-5.0A

D

4

3

V = -5V

DS

-10V

-15V

2

1

GS

-V , GATE-SOURCE VOLTA G E (V)
0

0 4 8 121620

Q , GATE CHARGE (nC)

3000
2000

1000

500

200

CAPACITANCE (pF)

100

f = 1 MHz
V = 0 V

GS

50

0.1 0.2 0.5 1 2 5 10 20

-V , DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics.

100

100us

10

RDS(ON) LIMIT

1ms

10ms

100ms

DC

1s

10s

1

V = -4.5V

GS

SINGLE PULSE

D

0.1

-I , DRAIN CURRENT (A)

R = 125°C/W

θ

JA

T = 25°C

A

0.01

0.1 0.2 0.5 1 2 5 10 20 50

-V , DRAIN-SOURCE VOLTAGE (V)

DS

50

SINGLE PULSE

R =125°C/W

40

30

20

POWER (W)

10

0

0.001 0.01 0.1 1 10 100 300
SINGLE PULSE TIME (SEC)

θ

JA

T = 25°C

A

C

C

C

iss

oss

rss

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.5

0.2

0.2

0.1

0.05

0.02

0.01

0.005

r(t), NORMALIZED EFFECTIVE

0.002

TRANSIENT THERMAL RESISTANCE

0.001

0.0001 0.001 0.01 0.1 1 10 100 300

0.1

0.05

0.02

0.01
Single Pulse

t , TIM E (s e c )

1

R (t) = r( t) * R

JA

θ

R =

125

JA

θ

P(pk)

t

1

t

2

T - T = P * R (t)

J

A

Du ty C y c le , D = t /t

°C/W

JA

θ

1

JA

θ

2

Figure 11. T ransient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1.
Transient themal response will change depending on the circuit board design.

FDS8433A Rev. B1

SO-8 Tape and Reel Data and Package Dimensions

SOIC(8lds) Packaging
Configuration: Figure 1.0

ELECTROSTATIC

SENSITIVE DEVICES

DO NOT SHIP OR STORE NEAR STRONG ELECTROSTATIC
ELECTROMAGNETIC, MAGNETIC OR RADIOACTIVE FIELDS

TNR DATE
PT NUMBER
PEEL STRENGTH MIN ______________gms

Customized
Label

Packaging Option
Packaging type

Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel (kg)

Note/Comments

MAX _____________ gms

ESD Label

SOIC (8lds) Packaging Information

Standard

(no flow code)

2,500 95 4,000

13" Dia

343x64x343 530x130x83 343x64x343

5,000 30,000 8,000

0.0774 0.0774 0.0774 0.0774

0.6060 - 0.9696 0.1182

TNR

L86Z F011

Rail/Tube-TNR

13" Dia

Embossed Car rier Tape

Antistatic Cover Tape

Static Dissipative

F63TNR
Label

D84Z

TNR

500

7" Dia

184x18 7x47

1,000

F

NDS

9959

9959

852

SOIC-8 Unit Orientation

343mm x 342mm x 64mm

Stand a r d In t e rm ed iate box

Packaging Description:

SOIC-8 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 uni t s pe r 13" o r 33 0c m d ia met er reel . Th e reel s ar e
dark blue in color and is made of polystyrene plastic (anti­static coated). Other option comes in 500 units per 7" or
177cm di ameter reel. This and some o ther options are
further described in the Packaging Information table.

These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in di ff ere nt siz es depe nd in g on th e num be r of pa rts
shippe d.

F

NDS

9959

F

NDS

9959

F

NDS

852

852

852

F

NDS
9959

852

Pin 1

F63TNR Label sample

LOT: CBVK741B019

FSID: FDS9953A

D/C1: D9842 QTY1: SPEC REV:
D/C2: QTY2: CPN:

QTY: 2500

SPEC:

N/F: F (F63TNR)3

SOIC(8lds) Tape Leader and Trailer
Configuration: Figure 2.0

Carrier Tape

Cover Tape

Trailer Tape
640mm minimum or
80 empty pockets

F63TNLab el

ESD Label

Components

ESD Label

F63TNLabel

Leader Tape
1680mm minimum or
210 empty pockets

July 1999, Rev. B

SO-8 Tape and Reel Data and Package Dimensions, continued

SOIC(8lds) Embossed Carrier Tape
Configuration: Figure 3.0

T

K0

Wc

B0

P0

D0

E1

F

W

E2

Tc

A0

P1

D1

User Direction of Feed

Dimensions are in millimeter

Pkg type

(8lds)

SOIC

(12mm)

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

SOIC(8lds) Reel Configuration: Figure 4.0

A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

6.50

5.30

12.0

1.55

1.60

1.75

10.25

+/-0.10

+/-0.10

+/-0.3

+/-0.05

+/-0.10

+/-0.10

rotational and lateral movement requirements (see sketches A, B, and C).

B0

20 deg maximum component rotation

Sketch A (Side or Front Sectional View)

Component Rotation

5.50

min

+/-0.05

20 deg maximum

A0

Sketch B (Top View)

Component Rotation

W1 Measured at Hub

8.0
+/-0.1

Typical
component
cavity
center line

Typical
component
center line

Dim A

Max

4.0
+/-0.1

0.450

2.1
+/-0.10

0.5mm
maximum

Sketch C (Top View)

Component lateral movement

+/-

0.150

9.2
+/-0.3

0.5mm
maximum

0.06
+/-0.02

Dim A

max

Tape Size

12mm 7" Dia

12mm 13" Dia

 1998 Fairchild Semiconductor Corporation

Reel

Option

Dim N

Diameter Option

7"

See detail AA

B Min

Dim C

13" Diameter Option

See detail AA

W2 max Measured at Hub

Dim D

W3

min

DETAIL AA

Dimensions are in inches and millimeters

Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)

7.00

0.059

177.8

13.00
330

1.5

0.059

1.5

512 +0.020/-0.008
13 +0.5/-0.2

512 +0.020/-0.008
13 +0.5/-0.2

0.795

2.165550.488 +0.078/-0.000

20.2

0.795

7.00

20.2

178

12.4 +2/0

0.488 +0.078/-0.000

12.4 +2/0

0.724

18.4

0.724

18.4

0.469 – 0.606

11.9 – 15.4

0.469 – 0.606

11.9 – 15.4

July 1999, Rev. B

SO-8 Tape and Reel Data and Package Dimensions, continued

SOIC-8 (FS PKG Code S1)

1 : 1

Scale 1:1 on letter size paper

Dimensions show n below are in :

inches [m illimeters]

Part Weight per unit (gram): 0.0774

9

September 1998, Rev. A

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
CoolFET™
CROSSVOLT™

2

CMOS

E

TM

FACT™
FACT Quiet Series™

®

FAST
FASTr™
GTO™
HiSeC™

ISOPLANAR™
MICROWIRE™
POP™
PowerTrench



QFET™
QS™

Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8

TinyLogic™
UHC™
VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.