Datasheet FDS7066N3 Datasheet (Fairchild Semiconductor)

May 2003

FDS7066N3

30V N-Channel PowerTrench MOSFET

FDS7066N3

General Description

This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R

in a small package.

DS(ON)

Applications

• Synchronous rectifier

• DC/DC converter

Features

• 23 A, 30 V R

R

• High performance trench technology for extremely

DS(ON)

low R

• High power and current handling capability

• Fast switching

• FLMP SO-8 package: Enhanced thermal

performance in industry-standard package size

= 5.5 mΩ @ VGS = 10 V

DS(ON)

= 6.5 mΩ @ VGS = 4.5 V

DS(ON)

Bottom-side

Drain Contact

45

36

27

18

Absolute Maximum Ratings T

o

=25

C unless otherwise noted

A

Symbol Parameter Ratings Units

V

Drain-Source Voltage 30 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1a) 23 A

– Pulsed 60

PD

TJ, T

STG

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range –55 to +150

(Note 1a) 3.0

(Note 1b)

±16

1.7

V

W

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a) 40

(Note 1) 0.5

°C/W

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS7066N3 FDS7066N3 13’’ 12mm 2500 units

2002 Fairchild Semiconductor Corpora tion

FDS7066N3 Rev B1 (W)

FDS7066N3

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS
∆T

I

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature
Coefficient

J

Gate–Body Leakage, Forward VGS = 16 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –16 V, VDS = 0 V –100 nA

= 0 V, ID = 250 µA

V

GS

= 250 µA, Referenced to 25°C

I

D

30 V

24

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–State Drain Current VGS = 10 V, VDS = 5 V 30 A

D(on)

V

= VGS, ID = 250 µA

DS

= 250 µA, Referenced to 25°C

I

D

VGS = 10 V, ID = 23 A

= 4.5 V, ID = 21 A

V

GS

= 10 V, ID = 23 A, TJ = 125°C

V

GS

1 1.5 3 V

–4.3

4.4

5.2

6.0

5.5

6.5

8.0

mV/°C

mΩ

gFS Forward Transconductance VDS = 10 V, ID = 23 A 116 S

Dynamic Characteristics

C

Input Capacitance 4973 pF

iss

C

Output Capacitance 826 pF

oss

C

Reverse Transfer Capacitance

rss

V

= 15 V, V

DS

f = 1.0 MHz

= 0 V,

GS

341 pF

Switching Characteristics (Note 2)

= 15 V, ID = 1 A,

V

t

Turn–On Delay Time 12 22 ns

d(on)

tr Turn–On Rise Time 8 16 ns

t

Turn–Off Delay Time 85 136 ns

d(off)

tf Turn–Off Fall Time

Qg Total Gate Charge 43 69 nC

Qgs Gate–Source Charge 13 nC

Qgd Gate–Drain Charge

DD

= 10 V, R

V

GS

= 15 V, ID = 23 A,

V

DS

= 5.0 V

V

GS

GEN

= 6 Ω

25 40 ns

11 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current 2.5 A

VSD

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

Drain–Source Diode Forward
Voltage

is guaranteed by design while R

θJC

θCA

a) 40°C/W when

mounted on a 1in2 pad
of 2 oz copper

= 0 V, IS = 2.5 A (Note 2) 0.7 1.2 V

V

GS

is determined by the user's board design.

b) 85°C/W when mounted on

a minimum pad of 2 oz
copper

FDS7066N3 Rev B1 (W)

Typical Characteristics

60

VGS = 10V

50

4.5V

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

0 0.25 0.5 0.75 1 1.25

3.5V

3.0V

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

2.5V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

2.2

2

1.8

VGS = 3.0V

1.6

1.4

, NORMALIZED

DS(ON)

1.2

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8
0 102030405060

3.5V

4.0V

, DIRAIN CURRENT (A)

I

D

4.5V

Drain Current and Gate Voltage.

6.0V

FDS7066N3

10V

1.8

ID = 23A

1.6
= 10V

V

GS

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150 175

T

, JUNCTION TEMPERATURE (oC)

J

Figure 3. On-Resistance Variation

withTemperature.

60

VDS = 5.0V

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

1.5 2 2.5 3

TA = 125oC

25oC

, GATE TO SOURCE VOLTAGE (V)

V

GS

-55oC

0.014

0.012

0.01

0.008

0.006

, ON-RESISTANCE (OHM)

0.004

DS(ON)

0.002

R

0

246810

Figure 4. On-Resistance Variation with

100

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001
0 0. 2 0.4 0.6 0.8 1 1.2

TA = 125oC

TA = 25oC

V

, GATE TO SOURCE VOLTAGE (V)

GS

Gate-to-Source Voltage.

VGS = 0V

TA = 125oC

25oC

V

BODY DIODE FORWARD VOLTAGE (V)

SD,

ID = 11.5A

-55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS7066N3 Rev B1 (W)

)

Typical Characteristics

6400

5600

4800

4000

3200

2400

CAPACITANCE (pF)

1600

800

0

0 6 12 18 24 30

C

ISS

C

OSS

C

RSS

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

10

ID = 23A

8

6

4

2

, GATE-SOURCE VOLTAGE (V)

GS

V

0

0 102030405060708090

, GATE CHARGE (nC)

Q

g

VDS = 5V

10V

15V

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

f = 1 MHz
V

= 0 V

GS

FDS7066N3

100

R

LIMIT

DS(ON)

10

1

, DRAIN CURRENT (A)

D

I

VGS = 10V

SINGLE PULSE

0.1
= 85oC/W

R

θ

JA

T

= 25oC

0.01

A

0.01 0.1 1 10 100

V

, DRAIN-SOURCE VOLTAGE (V)

DS

DC

1s

100ms

1ms

10ms

100µs

50

40

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.01 0.1 1 10 100

t

, TIME (sec)

1

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

R

JA

0.2

0.1

0.01

r(t), NORMALIZED EFFECTIVE

0.001

TRANSIENT THERMAL RESISTANCE

0.1

0.05

0.02

0.01

SINGLE PULSE

0.001 0.01 0.1 1 10 100 1000

t

, TIME (sec)

1

θ

R

P(pk

- TA = P * R

T

J

Duty Cycle, D = t

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

SINGLE PULSE

R

θ

JA

T

(t) = r(t) + R

= 85oC/W

JA

θ

t

1

t

2

= 85°C/W

= 25°C

A

JA

θ

(t)

JA

θ

/ t

1

2

FDS7066N3 Rev B1 (W)

Dimensional Outline and Pad Layout

FDS7066N3

FDS7066N3 Rev B1 (W)

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
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support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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This datasheet contains final specifications. Fairchild
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Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I2