Page 1
FDS6679
30 Volt P-Channel PowerTrench® MOSFET
FDS6679
March 2005
General Description
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
specifications.
R
DS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
• –13 A, –30 V. R
R
• Extended V
• High performance trench technology for extremely
low R
• High power and current handling capability
DS(ON)
GSS
= 9 mΩ @ VGS = –10 V
DS(ON)
= 13 mΩ @ VGS = – 4.5 V
DS(ON)
range (±25V) for battery applications
D
D
D
D
G
S
SO-8
S
S
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
5
6
7
8
4
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage –30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) –13 A
– Pulsed –50
PD
TJ, T
STG
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
Operating and Storage Junction Temperature Range –55 to +175
(Note 1c)
±25
1.2
1.0
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 50
(Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6679 FDS6679 13’’ 12mm 2500 units
©2005 Fairchild Semiconductor Corporation
FDS6679 Rev C1 (W)
°C/W
°C/W
Page 2
FDS6679
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1
DSS
I
Gate–Body Leakage VGS = ±25 V, VDS = 0 V ±100 nA
GSS
Breakdown Voltage Temperature
Coefficient
J
= 0 V, ID = –250 µA
V
GS
= –250 µA, Referenced to 25°C
I
D
–30 V
–23
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = –10 V, VDS = –5 V –50 A
D(on)
= VGS, ID = –250 µA
V
DS
I
= –250 µA, Referenced to 25°C
D
VGS = –10 V, ID = –13 A
= –4.5 V, ID = –11 A
V
GS
V
=–10 V, ID =–13 A, TJ=125°C
GS
gFS Forward Transconductance VDS = –5 V, ID = –13 A 44 S
–1 –1.6 –3 V
5
7.3
10
9.5
9
13
13
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 3939 pF
iss
C
Output Capacitance 972 pF
oss
C
Reverse Transfer Capacitance
rss
V
= –15 V, V
DS
f = 1.0 MHz
= 0 V,
GS
498 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 19 34 ns
d(on)
tr Turn–On Rise Time 10 20 ns
t
Turn–Off Delay Time 110 176 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 71 100 nC
Qgs Gate–Source Charge 12 nC
Qgd Gate–Drain Charge
= –15 V, ID = –1 A,
V
DD
= –10 V, R
V
GS
= –15 V, ID = –13 A,
V
DS
= –10 V
V
GS
GEN
= 6 Ω
65 104 ns
15 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –2.1 A
VSD
Notes:
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
1. R
θJA
the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6679 Rev C1 (W)
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
a) 50°C/W (10 sec)
62.5°C/W steady state
when mounted on a
2
1in
pad of 2 oz
copper
θCA
= 0 V, IS = –2.1 A (Note 2) –0.7 –1.2 V
V
GS
is determined by the user's board design.
b) 105°C/W when
mounted on a .04 in
pad of 2 oz copper
2
c) 125°C/W when mounted on a
minimum pad.
Page 3
Typical Characteristics
FDS6679
50
VGS = -10V
-6.0V
40
-4.5V
30
20
, DRAIN CURRENT (A)
D
-I
10
0
0 0.5 1 1.5 2
-4.0V
-3.5V
-3.0V
-V
, DRAIN TO SOURCE VOLTAGE (V)
DS
-2.5V
3
VGS = -3.0V
2.6
2.2
1.8
, NORMALIZED
1.4
DS(ON)
R
1
DRAIN-SOURCE ON-RESISTANCE
0.6
0 1020304050
-3.5V
-4.0V
-I
, DIRAIN CURRENT (A)
D
-4.5V
-5.0V
Figure 1. On-Region Characteristics. F igure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = -13A
V
= -10V
GS
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150 175
, JUNCTION TEMPERATURE (oC)
T
J
0.04
0.03
TA = 125oC
0.02
, ON-RESISTANCE (OHM)
0.01
DS(ON)
R
TA = 25oC
0
22.533.544.55
-V
, GATE TO SOURCE VOLTAGE (V)
GS
-6.0V
-10V
ID = -7.0A
Figure 3. On-Resistance Variation with
Temperature.
50
VDS = -5.0V
40
30
20
, DRAIN CURRENT (A)
D
-I
10
0
1.5 2 2.5 3 3.5
TA = -125oC
25oC
-55oC
-V
, GATE TO SOURCE VOLTAGE (V)
GS
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
-I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
TA = 125oC
25oC
-V
BODY DIODE FORWARD VOLTAGE (V)
SD,
-55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6679 Rev C1 (W)
Page 4
)
Typical Characteristics
FDS6679
10
ID = -13A
8
6
4
2
, GATE-SOURCE VOLTAGE (V)
GS
-V
0
0 1020304050607080
Q
, GATE CHARGE (nC)
g
VDS = -5V
-10V
-15V
6000
5000
4000
3000
2000
CAPACITANCE (pF)
1000
0
0 5 10 15 20 25 30
-V
C
ISS
C
OSS
C
RSS
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100
R
LIMIT
DS(ON)
10
1
, DRAIN CURRENT (A)
-I
VGS = -10V
D
0.1
SINGLE PULSE
R
= 125oC/W
JA
θ
T
= 25oC
0.01
A
0.01 0.1 1 10 100
, DRAIN-SOURCE VOLTAGE (V)
-V
DS
100ms
1s
10s
DC
10ms
100µs
1ms
50
40
30
20
10
P(pk), PEAK TRANSIENT POWER (W)
0
0.001 0.01 0.1 1 10 100 1000
t
, TIME (sec)
1
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
f = 1 MHz
V
= 0 V
GS
SINGLE PULSE
= 125°C/W
R
JA
θ
T
= 25°C
A
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
r(t), NORMALIZED EFFECTIVE
0.001
TRANSIENT THERMAL RESISTANCE
0.01
SINGLE PULSE
0.0001 0.001 0.01 0.1 1 10 100 1000
, TIME (sec)
t
1
R
(t) = r(t) * R
JA
θ
R
= 125oC/W
JA
θ
P(pk
t
1
t
2
T
- TA = P * R
J
Duty Cycle, D = t
JA
θ
(t)
JA
θ
/ t
1
2
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
Figure 11. Transient Thermal Response Curve.
FDS6679 Rev C1 (W)
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