Datasheet FDB070AN06A0, FDP070AN06A0 Datasheet (Fairchild)

FDB070AN06A0 / FDP070AN06A0

N-Channel PowerTrench® MOSFET
60V, 80A, 7mΩ

FDB070AN06A0 / FDP070AN06A0

March 2003

Features

•r

•Q

• Low Miller Charge

•Low Q

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 82567

DRAIN

(FLANGE)

MOSFET Maximum Ratings T

= 6.1mΩ (Typ.), V

DS(ON)

(tot) = 51nC (Typ.), V

g

Body Diode

RR

GS

= 10V

GS

TO-2 20 AB

FDP SERIES

= 10V, ID = 80A

SOURCE

DRAIN

GATE

= 25°C unless otherwise noted

C

Applications

• Motor / Body Load Control

• ABS Systems

• Powertrain Management

• Injection Systems

• DC-DC converters and Off-line UPS

• Distributed Power Architectures and VRMs

• Primary Switch for 12V and 24V systems

GATE

SOURCE

TO-2 63 AB

FDB SERIES

DRAIN

(FLANGE)

D

G

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 60 V

Gate to Source Voltage ±20 V

Drain Current

I

D

Continuous (T

Continuous (T

< 97oC, VGS = 10V)

C

= 25oC, VGS = 10V, R

A

= 43oC/W) 15 A

θJA

80 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 190 mJ

Power dissipation 175 W

o

Derate above 25

C1.17W/

Operating and Storage Temperature -55 to 175

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

©2003 Fairchild Semiconductor Corporation

Thermal Resistance Junction to Case TO-220,TO-263 0.86

Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2) 62

Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 43

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

certification.

FDB070AN06A0 / FDP070AN06A0 Rev. B

o

C/W

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB070AN06A0 FDB070AN06A0 TO-263AB 330mm 24mm 800 units

FDP070AN06A0 FDP070AN06A0 TO-220AB Tube N/A 50 units

FDB070AN06A0 / FDP070AN06A0

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B

I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 60 - - V

V

= 50V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- -250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

= 80A, VGS = 10V - 0.0061 0.007

I

Drain to Source On Resistance

D

I

= 80A, VGS = 10V,

D

T

= 175oC

J

- 0.0127 0.015

Dynamic Characteristics

C

C

C

Q

Q

Q

Q

Q

ISS

OSS

RSS

g(TOT)

g(TH)

gs

gs2

gd

Input Capacitance

Output Capacitance - 510 - pF

Reverse Transfer Capacitance - 230 - pF

Total Gate Charge at 10V VGS = 0V to 10V

Threshold Gate Charge VGS = 0V to 2V - 5.4 7 nC

Gate to Source Gate Charge - 17 - nC

Gate Charge Threshold to Plateau - 11.6 - nC

Gate to Drain “Miller” Charge - 16 - nC

Switching Characteristics (V

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time

Turn-On Delay Time - 12 - ns

Rise Time - 159 - ns

Turn-Off Delay Time - 27 - ns

Fall Time - 35 - n s

Turn-Off Time - - 93 ns

GS

= 10V)

= 25V, VGS = 0V,

V

DS

f = 1MHz

V

= 30V, ID = 80A

DD

V

= 10V, RGS = 5.6Ω

GS

V

DD

I

= 80A

D

I

= 1.0mA

g

= 30V

- 3000 - pF

51 66 nC

--256ns

µA

Ω

Drain-Source Diode Characteristics

I

= 80A - - 1.25 V

V

SD

t

rr

Q

RR

Notes:
1: Starting TJ = 25°C, L = 93µH, IAS = 64A.
2: Pulse width = 100s.

©2003 Fairchild Semiconductor Corporation FDB070AN06A0 / FDP070AN06A0 Rev. B

Source to Drain Diode Voltage

Reverse Recovery Time ISD = 75A, dISD/dt = 100A/µs- - 34ns

Reverse Recovered Charge ISD = 75A, dISD/dt = 100A/µs- - 35nC

SD

= 40A - - 1.0 V

I

SD

FDB070AN06A0 / FDP070AN06A0

Typical Characteristics T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PUL SE

-4

10

10

120

100

80

60

40

, DRAIN CURRENT (A)

D

I

20

150

0

25 50 75 100 125 150 175

Figure 2. Maximum Continuous Drain Current vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

CURRENT LIMITED
BY PACKAGE

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z

-1

10

θJC

10

0

x R

t

1

t

2

2

+ T

θJC

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

2000

1000

VGS = 10V

, PEAK CURRENT (A)

DM

I

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

100

50

-5

10

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC

FOR TEMPERATURES

ABOVE 25oC DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

©2003 Fairchild Semiconductor Corporation FDB070AN06A0 / FDP070AN06A0 Rev. B

FDB070AN06A0 / FDP070AN06A0

Typical Characteristics T

1000

100

OPERATION IN THIS

10

AREA MAY BE

LIMITED BY r

, DRAIN CURRENT (A)

D

I

1

SINGLE PUL SE
TJ = MAX RATED

TC = 25oC

0.1
110100

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

= 25°C unless otherwise noted

C

10µs

100µs

1ms

10ms

DC

Figure 5. Forward Bias Safe Operating Area

160

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

V

= 15V

DD

120

500

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0

= (L/ R)ln[(IAS*R)/(1.3*RATED BV

t

AV

100

10

, AVALANCHE CURRENT (A)

AS

I

1

0.01 0.1 1 10 100

STARTING TJ = 150oC

tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

NOTE: Refer to Fairchild Application Not es AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

160

VGS = 10V

120

VGS = 7V

80

, DRAIN CURRENT (A)

D

I

TJ = 25oC

40

TJ = 175oC

0

4.0 4.5 5.0 5.5 6.0 6.5 7.0
VGS, GATE TO SOURCE VOLTAGE (V)

TJ = -55oC

80

, DRAIN CURRENT (A)

D

I

40

VGS = 5V

0

00.51.01.52.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

16

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

14

12

10

8

DRAIN TO SOURCE ON RESISTANCE(mΩ)

6

0 20406080

VGS = 6V

VGS = 10V

ID, DRAIN CURRENT (A)

2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

VGS = 6V

TC = 25oC

VGS = 10V, ID =80A

Figure 9. Drain to Source On Resistance vs Drain

Current

©2003 Fairchild Semiconductor Corporation FDB070AN06A0 / FDP070AN06A0 Rev. B

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

FDB070AN06A0 / FDP070AN06A0

Typical Characteristics T

1.2

1.0

0.8

NORMALIZED GATE

THRESHOLD VOLTAGE

0.6

0.4

-80 - 40 0 40 80 120 160 200

TJ, JUNCTION TEMPERATURE (oC)

= 25°C unless otherwise noted

C

VGS = VDS, ID = 250µA

Figure 11. Normalized Gate Threshold Voltage vs

Junction Temperature

10000

C

= CGS + C

1000

C

= C

RSS

GD

C, CAPACITANCE (pF)

V

= 0V, f = 1MHz

GS

100

0.1 1 10

VDS, DRAIN TO SOURCE VOLTAGE (V)

ISS

C

OSS

≅ C

GD

+ C

DS

GD

60

1.10
ID = 250µA

1.05

1.00

BREAKDOWN VOLTAGE

0.95

NORMALIZED DRAIN TO SOURCE

0.90

-80 -40 0 40 80 120 160 200

TJ, JUNCTION TEMPERATURE (oC)

Figure 12. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

10

VDD = 30V

8

6

4

2

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

0 102030405060

Qg, GATE CHARGE (nC)

WAVE FO RM S I N
DESCENDING ORDER:

ID = 80A
ID = 15A

Figure 13. Capacitance vs Drain to Source

Voltage

©2003 Fairchild Semiconductor Corporation FDB070AN06A0 / FDP070AN06A0 Rev. B

Figure 14. Gate Charge Waveforms for Constant

Gate Current

Test Circuits and Waveforms

V

DS

L

VARY tP TO OBTAIN

REQUIRED PEAK I

V

GS

R

AS

G

+

V

DD

-

I

AS

DUT

t

0V

P

I

AS

0.01Ω

0

Figure 15. Unclamped Energy Test Circuit Figure 16. Unclamped Energy Waveforms

V

DS

V

DD

V

Q

I

g(REF)

L

V

GS

DUT

+

V

DD

-

V

GS

0

I

g(REF)

= 2V

Q

gs2

Q

g(TH)

Q

gs

0

Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveforms

BV

DSS

t

P

t

AV

Q

g(TOT)

DS

gd

V

GS

FDB070AN06A0 / FDP070AN06A0

V

DS

V

DD

V

= 10V

GS

V

DS

R

L

V

GS

R

GS

V

GS

DUT

+

V

DD

-

V

DS

0

V

GS

10%

0

t

d(ON)

90%

t

ON

t

r

t

d(OFF)

t

OFF

t

f

90%

10%

10%

90%

PULSE WIDTH

50%50%

Figure 19. Switching Time Test Circuit Figure 20. Switching Time Waveforms

©2003 Fairchild Semiconductor Corporation FDB070AN06A0 / FDP070AN06A0 Rev. B

Thermal Resistance vs. Mounting Pad Area

80

The maximum rated junction temperature, TJM, and the
thermal resistance of the heat dissipating path determines
the maximum allowable device power dissipation, P
application. Therefore the application’s ambient
temperature, T
must be reviewed to ensure that T
Equation 1 mathematically represents the relationship and

(oC), and thermal resistance R

A

is never exceeded.

JM

serves as the basis for establishing the rating of the part.

TJMTA–()

P

-----------------------------=

DM

R

θ JA

In using surface mount devices such as the TO-263
package, the environment in which it is applied will have a
significant influence on the part’s current and maximum
power dissipation ratings. Precise determination of P
complex and influenced by many factors:

1. Mounting pad area onto which the device is attached and
whether there is copper on one side or both sides of the
board.

2. The number of copper layers and the thickness of the
board.

3. The use of external heat sinks.

4. The use of thermal vias.

5. Air flow and board orientation.

6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
the board and the environment they are in.

Fairchild provides thermal information to assist the
designer’s preliminar y application evaluation. Figure 21
defines the R
copper (component side) area. This is for a horizontally

for the device as a function of the top

θJA

positioned FR-4 board with 1oz copper after 1000 seconds
of steady state power with no air flow. This graph provides
the necessary information for calculation of the steady state
junction temperature or power dissipation. Pulse
applications can be evaluated using the Fairchild device
Spice thermal model or manually utilizing the normalized
maximum transient thermal impedance curve.

DM

(oC/W)

θJA

(EQ. 1)

, in an

is

DM

60

C/W)

o

(

θJA

R

40

20

Figure 21. Thermal Resistance vs Mounting

R

= 26.51+ 19.84/(0.262+Area) EQ.2

θJA

R

= 26.51+ 128/(1.69+Area) EQ.3

θJA

(0.645) (6.45) (64.5)

AREA, TOP COPPER AREA in2 (cm2)

1100.1

Pad Area

FDB070AN06A0 / FDP070AN06A0

Thermal resistances corresponding to other copper areas
can be obtained from Figure 21 or by calculation using
Equation 2 or 3. Equation 2 is used for copper area defined
in inches square and equation 3 is for area in centimeters
square. The area, in square inches or square centimeters is
the top copper area including the gate and source pads.

19.84

26.51

=

R

θ JA

26.51

=

R

θ JA

©2003 Fairchild Semiconductor Corporation FDB070AN06A0 / FDP070AN06A0 Rev. B

------------- ------------- -----------+

0.262 Area+()

Area in Inches Squared

128

------------- ------------- --------+

1.69 Area+()

Area in Centimeters Squared

(EQ. 2)

(EQ. 3)

PSPICE Electrical Model

.SUBCKT FDB070AN06A0 2 1 3 ; rev March 2003
Ca 12 8 1.5e-9
Cb 15 14 1.5e-9
Cin 6 8 2.9e-9

Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD

Ebreak 11 7 17 18 62
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1

ESG

Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1

It 8 17 1

Lgate 1 9 4.8e-9

GATE

1

LGATE

RLGATE

RGATE

9

EVTEMP
+

20

18
22

Ldrain 2 5 1.0e-9
Lsource 3 7 3e-9

RLgate 1 9 48
RLdrain 2 5 10

S1A

12

RLsource 3 7 3

Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMO D

S1B

CA

Mweak 16 21 8 8 MweakMOD

Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 1.3e-3
Rgate 9 20 2.7
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 3.1e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD

Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*250),10))}

.MODEL DbodyMOD D (IS=7.6E-12 N=1.04 RS=2.2e-3 TRS1=2.7e-3 TRS2=2e-7
+ CJO=1.6e-9 M=0.55 TT=5e-12 XTI=3.9)
.MODEL DbreakMOD D (RS=8e-1 TRS1=5e-4 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=1.05e-9 IS=1e-30 N=10 M=0.45)

.MODEL MmedMOD NMOS (VTO=3.7 KP=10 IS=1e-30 N=1 0 TOX=1 L=1u W=1u RG=2.7)
.MODEL MstroMOD NMOS (VTO=4.7 KP=100 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MweakMOD NMOS (VTO=3.01 KP=0.03 IS=1e-30 N=10 TOX=1 L=1u W=1u RG =27 RS=0.1)

DPLCAP

10

RSLC2

­6

8

EVTHRES

+

+

19

6

-

S2A

13814

13

S2B

13

+

+

6

EGS EDS

8

-

-

5

RSLC1

51

+

5

ESLC

51

­50

RDRAIN

16

21

-

8

MSTRO

CIN

15

CB

8

14

+

5
8

-

MMED

8

DBREAK

EBREAK

MWEAK

RSOURCE

RBREAK

17 18

IT

RVTHRES

FDB070AN06A0 / FDP070AN06A0

LDRAIN

RLDRAIN

11

+

17

DBODY

18

-

LSOURCE

7

RLSOURCE

RVTE MP

19

­VBAT

+

22

DRAIN

2

SOURCE

3

.MODEL RbreakMOD RES (TC1=7.1e-4 TC2=-5.5e-7)
.MODEL RdrainMOD RES (TC1=1.7e-2 TC2=4e-5)
.MODEL RSLCMOD RES (TC1=3e-3 TC2=1e-5)
.MODEL RsourceMOD RES (TC1=1e-3 TC2=1e-6)
.MODEL RvthresMOD RES (TC1=-5.2e -3 TC2=-1.5e-5)
.MODEL RvtempMOD RES (TC1=-3e-3 TC2=1.3e-6)

.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-2)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2 VOFF=-4)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.5 VOFF=0.5)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.5 VOFF=-1.5)
.ENDS

Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.

©2003 Fairchild Semiconductor Corporation FDB070AN06A0 / FDP070AN06A0 Rev. B

SABER Electrical Model

rev March 2003
template FDB070AN06A0 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl=7.6e-12,nl=1.04,rs=2.2e-3,trs1=2.7e-3,trs2=2e-7,cjo=1.6e-9,m=0.55,tt=5e-12,xti=3.9)
dp..model dbreakmod = (rs=8e-1,trs1=5e-4,trs2=-8.9e-6)
dp..model dplcapmod = (cjo=1.05e-9,isl=10e-30,nl=10,m=0.45)
m..model mmedmod = (type=_n,vto=3.7,kp=10,is=1e-30, tox=1)
m..model mstrongmod = (type=_n,vto=4.7,kp=100,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=3.01,kp=0.03,is=1e-30, tox=1,rs=0.1)
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-4,voff=-2)
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-2,voff=-4)
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-1.5,voff=0.5)
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=0.5,voff=-1.5)
c.ca n12 n8 = 1.5e-9
c.cb n15 n14 = 1.5e-9
c.cin n6 n8 = 2.9e-9

dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod

spe.ebreak n11 n7 n17 n18 = 62
spe.eds n14 n8 n5 n8 = 1

GATE

spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1

LGATE

1

RLGATE

9

RGATE

ESG

EVTEMP
+

20

spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1

i.it n8 n17 = 1

l.lgate n1 n9 = 4.8e-9
l.ldrain n2 n5 = 1.0e-9
l.lsource n3 n7 = 3e-9

res.rlgate n1 n9 = 48

CA

S1A

12

S1B

res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 3

m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u

18
22

DPLCAP

10

RSLC2

­6

8

EVTHRES

+

+

19

6

-

S2A

13814

13

S2B

13

+

+

6

EGS E DS

8

-

-

5

RSLC1

51

ISCL

MMED

8

DBREAK

11

MWEA K

EBREAK

+

-

RSOURCE

RBREAK

17 18

IT

RVTHRES

17
18

7

50

RDRAIN

16

21

-

8

MSTRO

CIN

15

CB

8

14

+

5
8

-

LDRAIN

RLDRAIN

DBODY

LSOURCE

RLSOURCE

RVTE MP

19

­VBAT

+

22

DRAIN

2

SOURCE

3

FDB070AN06A0 / FDP070AN06A0

res.rbreak n17 n18 = 1, tc1=7.1e-4,tc2=-5.5e-7
res.rdrain n50 n16 = 1.3e-3, tc1=1.7e-2,tc2=4e-5
res.rgate n9 n20 = 2.7
res.rslc1 n5 n51 = 1e-6, tc1=3e-3,tc2=1e-5
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 3.1e-3, tc1=1e-3,tc2=1e-6
res.rvthres n22 n8 = 1, tc1=-5.2e-3,tc2=-1.5e-5
res.rvtemp n18 n19 = 1, tc1=-3e-3,tc2=1.3e-6
sw_vcsp.s1a n6 n12 n13 n8 = model= s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod

v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/250))** 10))
}
}

©2003 Fairchild Semiconductor Corporation FDB070AN06A0 / FDP070AN06A0 Rev. B

FDB070AN06A0 / FDP070AN06A0

PSPICE Thermal Model

REV 23 March 2003

FDB070AN06A0T

CTHERM1 TH 6 3.5e-3
CTHERM2 6 5 1.7e-2
CTHERM3 5 4 1.8e-2
CTHERM4 4 3 1.9e-2
CTHERM5 3 2 4.7e-2
CTHERM6 2 TL 7e-2

RTHERM1 TH 6 2e-2
RTHERM2 6 5 7e-2
RTHERM3 5 4 1e-1
RTHERM4 4 3 1.5e-1
RTHERM5 3 2 1.6e-1
RTHERM6 2 TL 1.85e-1

SABER Thermal Model

SABER thermal model FDB070AN06A0T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =3.5e-3
ctherm.ctherm2 6 5 =1.7e-2
ctherm.ctherm3 5 4 =1.8e-2
ctherm.ctherm4 4 3 =1.9e-2
ctherm.ctherm5 3 2 =4.7e-2
ctherm.ctherm6 2 tl =7e-2

rtherm.rtherm1 th 6 =2e-2
rtherm.rtherm2 6 5 =7e-2
rtherm.rtherm3 5 4 =1e-1
rtherm.rtherm4 4 3 =1.5e-1
rtherm.rtherm5 3 2 =1.6e-1
rtherm.rtherm6 2 tl =1.85e-1
}

RTHERM1

RTHERM2

RTHERM3

RTHERM4

RTHERM5

JUNCTION

th

CTHERM1

6

CTHERM2

5

CTHERM3

4

CTHERM4

3

CTHERM5

2

RTHE RM6

tl

©2003 Fairchild Semiconductor Corporation FDB070AN06A0 / FDP070AN06A0 Rev. B

CTHERM6

CASE

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intended to be an exhaustive list of all such trademarks.

ACEx™
ActiveArray™
Bottomless™
CoolFET™
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DOME™
EcoSPARK™

2

E

CMOS™
EnSigna™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™

FACT™
FACT Quiet Series™

®

FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™

2

I

C™

ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC

®

OPTOPLANAR™

PACMAN™
POP™
Power247™
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®

QFET™
QS™
QT Optoelectronics™
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RapidConfigure™
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SPM™
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®

VCX™

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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

that has been discontinued by Fairchild Semiconductor.
The datasheet is printed for reference information only.

Rev. I2

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx
ActiveArray
Bottomless
CoolFET
CROSSVOL T
DOME
EcoSPARK
E2CMOS
EnSigna

TM

TM

FACT
FACT Quiet Series

â

FAST
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC

I2C
Across the board. Around the world.
The Power Franchise
Programmable Active Droop

ImpliedDisconnect
ISOPLANAR
LittleFET
MicroFET
MicroPak
MICROWIRE
MSX
MSXPro
OCX
OCXPro
OPTOLOGIC

â

OPTOPLANAR

PACMAN
POP
Power247
PowerTrench

â

QFET
QS
QT Optoelectronics
Quiet Series
RapidConfigure
RapidConnect
SILENT SWITCHER
SMART START

SPM
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation
UHC
UltraFET

â

VCX

â

â

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I2