Datasheet FDB035AN06A0 Datasheet (Fairchild Semiconductor)

FDB035AN06A0

N-Channel PowerTrench® MOSFET
60V, 80A, 3.5mΩ

FDB035AN06A0

July 2002

Features

•r

•Q

• Low Miller Charge

• Low Qrr Body Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 82584

MOSFET Maximum Ratings T

= 3.2mΩ (Typ.), V

DS(ON)

(tot) = 95nC (Typ.), V

g

GATE

SOURCE

= 10V, ID = 80A

GS

= 10V

GS

TO-263AB

FDB SERIES

DRAIN

(FLANGE)

= 25°C unless otherwise noted

C

Applications

• Motor / Body Load Control

• ABS Systems

• Powertrain Management

• Injection Syste m s

• DC-DC converter s and Off-line UPS

• Distributed P ower Arc hitectures and VRMs

• Primary Switch for 12V and 24V systems

D

G

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Sou r c e Voltage 60 V
Gate to Source Voltage ±20 V
Drain Curr e nt

I

D

Continuous (T
Continuous (T

< 153oC, VGS = 10V)

C

= 25oC, VGS = 10V, with R

amb

= 43oC/W) 22 A

θJA

80 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 625 mJ
Power dissipation 310 W
Derate above 25

o

C2.07W/

Operating and Storage Temperature -55 to 175

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

This product has been designed to meet the extreme test conditions and environment demanded by the automotive

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality

©2002 Fairchild Semiconductor Corporation

ThermalResistance Junctionto Case TO-263 0.48
ThermalResistance Junctionto Ambient TO-263, (Note 2) 62
ThermalResistanceJunctionto AmbientTO-263,1in2copper pad area 43

industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

systems certification.

FDB035AN06A0 Rev. A

o

C/W

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB035AN06A0 FDB035AN06A0 TO-263AB 330mm 24mm 800 units

FDB035AN06A0

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Con ditions Min Typ Max Units

Off Characteristics

B
I

DSS

I

GSS

VDSS

Drain to Sou r c e Br ea k down Voltage ID = 250µA, VGS = 0V 60 - - V

V

= 50V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- -250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

I

= 80A, VGS = 10V - 0.0032 0.0035

D

I

= 40A, VGS = 6V - 0.0044 0.0066

Drain to S ou r c e On Re si st ance

D

I

= 80A, VGS = 10V,

D

T

= 175oC

J

- 0.0065 0.0071

Dynamic Characteristics

C
C
C
Q
Q
Q
Q
Q

ISS
OSS
RSS

g(TOT)
g(TH)
gs
gs2
gd

Input Capacitance
Output Capacitance - 1123 - pF
Reverse Transfer Capacitance - 367 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total Gate Charge at 10V VGS = 0V to 10V
Threshold Gate Charge VGS = 0V to 2V - 12 15 nC
Gate to Source Gate Charg e - 30 - nC
Gate Charge Threshold to Plateau - 18 - nC

V

DD

I

= 80A

D

I

= 1.0m A

g

= 30V

Gate to Drain “Miller” Charge - 24 - nC

- 6400 - pF

95 124 nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time
Turn-On Delay Time - 15 - ns
Rise Time - 93 - ns
Turn-Off D elay Time - 38 - ns
Fall Time - 13 - ns
Turn-Off Time - - 75 ns

(VGS = 10V)

= 30V, ID = 80A

V

DD

V

= 10V, RGS = 2.4Ω

GS

--163ns

Drain-Source Diode Characteristics

I

= 80A - - 1.25 V

V

SD

t

rr

Q

RR

Notes:
1: Starting T
2: Pulse Width = 100s

©2002 Fairchild Semiconductor Corporation FDB035AN06A0 Rev. A

Source to Drain Diode V oltage
Reverse Recovery Time ISD = 75A, dISD/dt = 100A/µs- -38ns

Reverse Recovered Charge ISD = 75A, dISD/dt = 100A/µs- -39nC

= 25°C, L = 0.255mH, IAS = 70A.

J

SD

= 40A - - 1.0 V

I

SD

FDB035AN06A0

Typical Characteristics T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

10

250

200

150

100

, DRAIN CURRENT (A)

D

I

50

0

150

25 50 75 100 125 150 175

Figure 2. Maximum Continuous Drain Curr ent vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

CURRENT LIMITED
BY PACKAGE

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-1

10

θJC

10

1/t2

0

x R

θJC

t

+ T

1

t

2

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

3000

TRANSCONDUCTANCE
MAY LIMIT CURRENT

1000

IN THIS REGION

VGS = 10V

100

, PEAK CURRENT (A)

DM

I

10

-5

10

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC
FOR TEMPERATURES

o

ABOVE 25

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

©2002 Fairchild Semiconductor Corporation FDB035AN06A0 Rev. A

FDB035AN06A0

Typical Characteristics T

2000

1000

100

OPERATION IN THIS

AREA MAY BE

10

LIMITED BY r

, DRAIN CURRENT (A)

D

I

1

SINGLE PULSE
TJ = MAX RATED

T

= 25oC

C

0.1
1 10 100

DS(ON)

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

= 25°C unless otherwise noted

C

10µs

100µs

1ms

DC

Figure 5. Forward Bias Safe Operating Area

160

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V

= 15V

DD

120

10ms

100

STARTING TJ = 25oC

STARTING TJ = 150oC

10

, AVALANCHE CURRENT (A)
I

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

AS

If R ≠ 0
t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

1

0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE (ms)

DSS

- VDD)

DSS

- VDD) +1]

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

160

120

VGS = 20V

VGS = 6V

VGS = 10V

VGS = 5V

80

, DRAIN CURRENT (A)

D

I

40

0

3.0 3.5 4.0 4.5 5.0 5.5 6

TJ = 175oC

TJ = 25oC

TJ = -55oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

5

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

VGS = 6V

4

VGS = 10V

DRAIN TO SOURCE ON RESISTANCE(mΩ)

3

0 20406080

I

, DRAIN CURRENT (A)

D

Figure 9. Drain to So urce On Resistanc e v s Drai n

Current

80

, DRAIN CURRENT (A)

D

I

40

PULSE DURATION = 80µs

0

0 0.5 1.0 1.5

2.5

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200

DUTY CYCLE = 0.5% MAX

VDS, DRAIN TO SOURCE VOLTAGE (V)

TJ, JUNCTION TEMPERATURE (oC)

TC = 25oC

VGS = 10V, ID =80A

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

©2002 Fairchild Semiconductor Corporation FDB035AN06A0 Rev. A

FDB035AN06A0

Typical Characteristics T

1.4

1.2

1.0

0.8

0.6

NORMALIZED GATE

THRESHOLD VOLTAGE

0.4

0.2

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

= 25°C unless otherwise noted

C

VGS = VDS, ID = 250µA

Figure 11. Normalized G ate Threshol d Voltage vs

Junction Temperatur e

10000

C

= CGS + C

C

≅ C

+ C

OSS

DS

GD

1000

C, CAPACITANCE (pF)

C

= C

RSS

GD

V

= 0V, f = 1MHz

GS

100

0.1 1 10 60
VDS, DRAIN TO SOURCE VOLTAGE (V)

ISS

GD

1.2
ID = 250µA

1.1

1.0

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0.9

-80 -40 0 40 80 120 160 200
T

, JUNCTION TEMPERATURE (oC)

J

Figure 12. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

10

VDD = 30V

8

6

4

WAVEFORMS IN

2

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

0 25 50 75 100

Qg, GATE CHARGE (nC)

DESCENDING ORDER:

ID = 80A

= 40A

I

D

Figure 13. Capacitance vs Drain to Sour ce

Voltage

©2002 Fairchild Semiconductor Corporation FDB035AN06A0 Rev. A

Figure 14. Gat e Charge Waveforms for Constant

Gate Current

Test Circuits and Waveforms

V

DS

L

TO OBTAIN

VARY t

P

REQUIRED PEAK I

V

GS

R

AS

G

+

V

DD

-

I

AS

DUT

t

0V

P

I

AS

0.01Ω

0

Figure 15. Unclamped Energy Test Circuit Figure 16. Unclamped Energy Wavef orm s

V

DS

V

DD

V

Q

I

g(REF)

L

V

GS

DUT

+

V

DD

-

V

GS

0

I

g(REF)

= 2V

Q

gs2

Q

g(TH)

Q

gs

0

Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveforms

BV

DSS

t

P

t

AV

Q

g(TOT)

DS

gd

V

GS

FDB035AN06A0

V

DS

V

DD

V

= 10V

GS

V

DS

R

L

V

GS

R

GS

V

GS

DUT

+

V

DD

-

V

DS

0

V

GS

10%

0

t

d(ON)

90%

t

ON

t

r

t

d(OFF)

t

OFF

t

f

90%

10%

10%

90%

PULSE WIDTH

50%50%

Figure 19. Switching Time Test Circuit Figure 20. Switching Time Waveforms

©2002 Fairchild Semiconductor Corporation FDB035AN06A0 Rev. A

Thermal Resistance vs. Mounting Pad Area

80

The maximum rated junction temperature, TJM, and the
thermal resistance of the heat dissipating path determines
the maxi mum al lowab le de vice p ower di ssip ation, P
application. Therefore the application’s ambient
temperature, T
must be reviewed to ensure that T
Equation 1 mathematically represents the relationship and

(oC), and th ermal res istance R

A

is never exceeded.

JM

serve s as the basis for establ ishing the rating of the part.

TJMTA–()

P

----------------- ------------=

DM

R

θJA

DM

(oC/W)

θJA

(EQ. 1)

, in an

60

C/W)

o

(

θJA

R

40

R

= 26.51+ 19.84/(0.262+Area) EQ.2

θJA

R

= 26.51+ 128/(1.69+Area) EQ.3

θJA

FDB035AN06A0

In using surface mount devices such as the TO-263
package, the environment in which it is applied will have a
significant influence on the part’s current and maximum
power d issipati on rating s. Precise d etermin ation of P
comple x and influenced by many factors:

DM

is

1. Mou nting pad area ont o which the device is attached and
whet her the re is copp er on one s ide or both side s of the
board.

2. The number of copper layers and the thickness of the
board.

3. The use of external heat sinks.

4. The use of thermal vias.

5. Air flow and board orientation.

6. For no n steady state applic ations, th e pulse widt h, the
duty cycle and the transient thermal response of the part,
the boa rd and the environment they are in.

Fairchild provides thermal information to assist the
designer’s preliminary application evaluation. Figure 21
defines the R
copper (component side) area. This is for a horizontally

for the device as a function of the top

θJA

positi on ed FR-4 board w ith 1oz c o pp er after 1 00 0 se c onds
of stea dy st ate pow er w ith n o air flow . Th is gr aph prov ides
the necessary inf ormation for calculation of the steady state
junction temperature or power dissipation. Pulse
applications can be evaluated using the Fairchild device
Spice t hermal model or manu ally utilizing the no rmalized
maximum transient thermal impedance curve.

20

1100.1

(0.645) (6.45) (64.5)

AREA, TOP COPPER AREA in2 (cm2)

Figure 21. Thermal Resistance vs Mounting

Pad Area

Therma l resi stances correspondi ng to other copper areas
can be obtained from Figure 21 or by calculation using
Equation 2 or 3. Equation 2 is used for copper area defined
in inch es squ are and equ ation 3 is for area in cent imeters
square. The area, in square inches or square centimeters is
the top copper area including the gate and source pads.

19.84

26.51

=

R

θJA

26.51

=

R

θJA

©2002 Fairchild Semiconductor Corporation FDB035AN06A0 Rev. A

-------------------------------------+

0.262 Area+()

Area in Inches Squared

128

----------------------------------+

1.69 Area+()

Area in Centimeters Squared

(EQ. 2)

(EQ. 3)

PSPICE Electrical Model

.SUBCKT FDB035AN06A0 2 1 3 ; rev July 04, 2002
Ca 12 8 1.5e-9
Cb 15 14 1.5e-9
Cin 6 8 6.1e-9

Dbod y 7 5 DbodyMOD
Dbreak 5 11 Db reakMOD
Dplcap 10 5 DplcapMOD

Ebreak 11 7 17 18 69.3
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1

It 8 17 1
Lgat e 1 9 4.81e-9

Ldrain 2 5 1.0e -9
Lsource 3 7 4.63e-9

RLgate 1 9 48.1
RLdr ai n 2 5 10
RLsource 3 7 46.3

Mmed 16 6 8 8 M m edMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD

Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 1e-4
Rgate 9 20 1.36
RSLC1 5 51 RSL CM OD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 2.5e-3
Rvthres 22 8 RvthresMO D 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BM OD
S2a 6 15 14 13 S2AM OD
S2b 13 15 14 13 S2BM OD

Vbat 22 19 DC 1

GATE

1

LGATE

RLGATE

RGATE

9

CA

ESG

+

EVTEMP

+

-

18
22

20

S1A

12

13

8

S1B

EGS EDS

-

13

10

6
8

+

+

RSLC2

6

S2A

14
13

S2B

6
8

-

-

DPLCAP

EVTHRES

+

19

8

CIN

15

CB

-

+

-

5

51

5

51

21

MSTRO

14

5
8

RSLC1

+

ESLC

­50

RDRAIN

16

8

MMED

8

DBREAK

11

+

17

EBREAK

18

-

MWEAK

RSOURCE

RBREAK

17 18

IT

RVTHRES

7

RVTEMP
19

-

+

22

LDRAIN

RLDRAIN

DBODY

LSOURCE

RLSOURCE

VBAT

DRAIN

2

SOURCE

3

FDB035AN06A0

ESLC 51 50 VALUE = {(V(5,51)/ ABS(V(5,51)))*(PWR (V (5,51)/(1 e-6*250),10) )}
.MODEL DbodyMOD D (IS=2.4E-11 N=1.04 R S=1.65e-3 TRS1=2.7e-3 TRS2=2e-7

+ CJO=4.35e-9 M=5.4e-1 TT=1e-9 XTI=3.9)
.MODEL DbreakMOD D (RS= 1.5e-1 TRS1=1e-3 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=1.7e-9 IS=1e-30 N=10 M=0.47)

.MODEL MmedMOD NMOS (VTO=3.3 KP=9 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=1.36 T_abs=25)
.MODEL Mstro M OD NMOS (VTO=4.00 KP=275 IS=1e-30 N=10 TOX=1 L=1u W=1u T_abs=25)
.MODEL Mwe akMOD NMOS (VTO=2.72 KP=0. 03 IS=1e-30 N=10 T O X = 1 L=1u W=1u RG=13. 6 RS=0.1 T_ab s=25)

.MODEL Rb reakMOD RES (T C1=9e-4 TC2= -9e-7)
.MODEL Rd rai nMOD RES (TC 1 =4e-2 TC2=1.75 e-4)
.MODEL RSLCMOD RES (TC1=1e-3 TC2=1e-5)
.MODEL RsourceMOD RES (TC1=5e-3 TC2=1 e-6)
.MODEL RvthresMOD RES (T C1=-6.7e-3 TC2=-1.5e-5)
.MODEL RvtempMOD RES (T C1=-2.5e-3 TC 2=1e-6)

.MODEL S1AMOD VSWITC H (RON =1e - 5 ROFF= 0. 1 VON=- 4 VOFF =-1 .5 )
.MODEL S1BMOD VSWITC H (RON= 1e- 5 ROFF = 0.1 VON= - 1.5 VO FF=- 4)
.MODEL S2AMOD VSWITC H (RON= 1e- 5 ROFF = 0.1 VON= - 1 VOFF =0.5)
.MODEL S2BMOD VSWITC H (RON= 1e- 5 ROFF = 0.1 VON= 0 .5 VOFF= -1) .
ENDS

Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, wri t ten by William J. Hepp and C. Frank
Wheatley.

©2002 Fairchild Semiconductor Corporation FDB035AN06A0 Rev. A

SABER Electrical Model

rev July 4, 2002
template FDB035AN06A0 n2,n1,n3 = m_temp
electrical n2,n1,n3
number m_temp=25
{
var i iscl
dp..model dbodymod = (isl=2.4e-11,nl=1.04,rs=1.65e-3,trs1=2.7e-3,trs2=2e-7,cjo=4.35e-9,m=5.4e-1,tt=1e-9,xti=3.9)
dp..model dbreakmod = (rs=1.5e-1,trs1=1 e-3,trs2=-8.9e-6)
dp..m odel dpl capmod = (cjo=1.7 e-9,isl= 10e-3 0,nl=10 , m = 0.47)
m..model mmedmod = (type=_n,vto=3.3,kp=9,is=1e-30, tox=1)
m..model mstrongmod = (type=_n,vto=4.00,kp=275,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=2.72,kp=0.03,is=1e-30, tox=1,rs=0.1)
sw_vcsp.. mo del s1amod = (ron=1e-5,roff=0.1, von=-4,voff=-1.5)
sw_vcsp.. mo del s1bmod = (ron=1e-5,roff=0.1, von=-1.5,voff=-4)
sw_vcsp.. mo del s2amod = (ron=1e-5,roff=0.1, von=-1,voff=0.5)
sw_vcsp.. mo del s2bmod = (ron=1e-5,roff=0.1, von=0.5,voff=-1)
c.ca n12 n8 = 1.5e -9
c.cb n15 n14 = 1.5e-9
c.cin n6 n8 = 6.1e -9

dp.dbody n7 n5 = model=dbodym od
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplca pm od

spe.ebreak n11 n7 n17 n18 = 69.3

GATE

spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1

LGATE

1

RLGATE

9

RGATE

ESG

EVTEMP
+

18
22

20

spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1

CA

S1A

12

S1B

i.it n8 n17 = 1
l.lgate n1 n9 = 4.81e-9

l.ldrain n2 n5 = 1.0e-9
l.lsource n3 n7 = 4.63e-9

res.rlgate n1 n9 = 48.1
res.rldrai n n2 n5 = 10
res.rlsource n3 n7 = 46.3

m.mmed n16 n6 n8 n8 = m odel=mmedmod, temp=m_temp, l =1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, temp=m_temp, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, temp=m_temp, l=1u, w=1u

DPLCAP

10

RSLC2

­6

8

EVTHRES

+

+

19

8

6

-

S2A

13

14

8

13

S2B

13

+

+

6

EGS EDS

8

-

-

15

CIN

CB

-

+

-

5

MSTRO

14

5
8

RSLC1

51

ISCL

50
RDRAIN

16

21

8

MMED

8

DBREAK

11

MWEAK

EBREAK

+

-

RSOURCE

RBREAK

17 18

IT

RVTHRES

17
18

7

RVTEMP
19

-

+

22

RLSOURCE

LDRAIN

RLDRAIN

DBODY

LSOURCE

VBAT

DRAIN

2

SOURCE

3

FDB035AN06A0

res.rbreak n17 n18 = 1, tc1=9e-4, tc 2=-9e-7
res.rdrain n50 n16 = 1e-4, tc1=4 e-2,tc2=1.75 e-4
res.rgate n9 n20 = 1.36
res.rslc1 n5 n51 = 1e-6, tc1=1e -3, tc2=1e-5
res.rslc2 n5 n50 = 1e3
res.rsour ce n8 n7 = 2.5e-3, tc1=5e-3,tc2=1e-6
res.rvthres n22 n8 = 1, tc1=-6.7e-3,tc2=-1. 5e-5
res.rvtemp n18 n19 = 1, tc1=-2.5e-3,tc2=1e-6
sw_vcsp.s1 a n6 n12 n13 n8 = model= s1amod
sw_vcsp.s1 b n13 n12 n13 n8 = model =s1bmod
sw_vcsp.s2 a n6 n15 n14 n13 = model =s2amod
sw_vcsp.s2 b n13 n15 n14 n13 = model =s2bmod

v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/250 ))** 10))
}

©2002 Fairchild Semiconductor Corporation FDB035AN06A0 Rev. A

PSPICE Thermal Model

REV 23 July 4, 2002
FDB035AN06A0T
CTHERM1 TH 6 6.45e-3

CTHERM2 6 5 3e-2
CTHERM3 5 4 1. 4e-2
CTHERM4 4 3 1. 65e-2
CTHERM5 3 2 4. 85e-2
CTHERM6 2 TL 1e-1

RTHERM1 TH 6 3.24e-3
RTHERM2 6 5 8. 08e-3
RTHERM3 5 4 2. 28e-2
RTHERM4 4 3 1e-1
RTHERM5 3 2 1. 1e-1
RTHERM6 2 TL 1.4e-1

SABER Thermal Model

RTHERM1

RTHERM2

FDB035AN06A0

JUNCTION

th

CTHERM1

6

CTHERM2

5

SABER therm al m odel F DB035AN06A0T
template thermal_model th tl
thermal_ c th , tl
{
ctherm.c t herm1 th 6 =6.45e-3
ctherm.ctherm2 6 5 =3e-2
ctherm.ctherm3 5 4 =1.4e-2
ctherm.ctherm4 4 3 =1.65e-2
ctherm.ctherm5 3 2 =4.85e-2
ctherm.ctherm6 2 tl =1e-1

rtherm.rtherm1 th 6 =3.24e-3
rtherm.rtherm2 6 5 =8.08e-3
rtherm.rtherm3 5 4 =2.28e-2
rtherm.rtherm4 4 3 =1e-1
rtherm.rtherm5 3 2 =1.1e-1
rtherm.rtherm6 2 tl=1.4e-1

RTHERM3

RTHERM4

RTHERM5

RTHERM6

CTHERM3

4

CTHERM4

3

CTHERM5

2

CTHERM6

CASE

tl

©2002 Fairchild Semiconductor Corporation FDB035AN06A0 Rev. A

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Rev. I