DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
2SK2479
DESCRIPTION
The 2SK2479 is N-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
FEATURES
• Low On-Resistance
RDS(on) = 7.5 Ω (VGS = 10 V, ID = 2.0 A)
• Low Ciss Ciss = 485 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) I
Drain Current (pulse)* ID(pulse) ±8.0 A
Total Power Dissipation (Tc = 25 ˚C) PT1 70 W
Total Power Dissipation (TA = 25 ˚C) PT2 1.5 W
Channel Temperature T
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** IAS 3.0 A
Single Avalanche Energy** E
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
VDSS 900 V
D(DC) ±3.0 A
ch 150 ˚C
AS 5.4 mJ
PACKAGE DIMENSIONS
(in millimeters)
10.6 MAX.
3.6 ± 0.2
10.0
3.0 ± 0.3
4
123
1.3 ± 0.2
0.75 ± 0.1
Gate
5.9 MIN.
6.0 MAX.
2.542.54
MP-25 (TO-220)
Drain
Source
4.8 MAX.
1.3 ± 0.2
15.5 MAX.
0.5 ± 0.2
12.7 MIN.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
Body
Diode
2.8 ± 0.2
Document No. D10271EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
©
1995
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
2SK2479
CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-State Resistance RDS(on) 5.6 7.5 VGS = 10 V, ID = 2.0 A
Gate to Source Cutoff Voltage VGS(off) 2.5 3.5 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 0.8 VDS = 20 V, ID = 2.0 A
Drain Leakage Current IDSS 100 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±100 VGS = ±30 V, VDS = 0
Input Capacitance Ciss 485 VDS = 10 V
Output Capacitance Coss 75 VGS = 0
Reverse Transfer Capacitance Crss 10 f = 1 MHz
Turn-On Delay Time td(on) 12 ID = 2.0 A
Rise Time tr 5 VGS = 10 V
Turn-Off Delay Time td(off) 35 VDD = 150 V
Fall Time tf 8 R
Total Gate Charge QG 17 ID = 3.0 A
Gate to Source Charge QGS 3 VDD = 450 V
Gate to Drain Charge QGD 8 VGS = 10 V
Body Diode Forward Voltage VF(S-D) 1.0 IF = 3.0 A, VGS = 0
Reverse Recovery Time trr 670 IF = 3.0 A, VGS = 0
Reverse Recovery Charge Qrr 3.0 di/dt = 50 A/µs
UNIT
Ω
V
S
µ
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µ
A
= 10 Ω
G
C
Test Circuit 1 Avalanche Capability
D.U.T.
R
G = 25 Ω
PG
VGS = 20 - 0 V
50 Ω
BVDSS
IAS
ID
VDS
VDD
Starting Tch
Test Circuit 3 Gate Charge
D.U.T.
I
G = 2 mA
PG.
50 Ω
L
V
RL
VDD
Test Circuit 2 Switching Time
D.U.T.
VGS
Wave Form
ID
Wave Form
VGS
10 %
0
ID
90 %
10 %
0
td (on) tr td (off) tf
ton toff
90 %
GS (on)
V
90 %
ID
10 %
L
R
DD
PG.
RG
G = 10 Ω
R
VDD
VGS
0
t
t = 1us
Duty Cycle ≤ 1 %
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
g
2SK2479
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - %
0
20 40 60 80 100 120 140 160
T
C - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
10
= 10 V)
GS
ID(DC)
1
ID - Drain Current - A
Limited (at V
DS(on)
R
Power Dissipation Limited
ID(pulse)
10 ms
PW = 100 s
1 ms
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
70
60
50
40
30
20
10
PT - Total Power Dissipation - W
0
20
40 60 80 100 120 140 160
T
C - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
10
µ
5
VGS = 20 V
10 V
8 V
ID - Drain Current - A
6 V
TC = 25
˚C
Single Pulse
0.1
1
10 100 1000
V
DS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
100
TA = –25 ˚C
10
25 ˚C
75 ˚C
125 ˚C
1.0
ID - Drain Current - A
0.1
0
51015
GS - Gate to Source Volta
V
e - V
Pulsed
VDS = 10 V
0
10
V
DS - Drain to Source Voltage - V
20
30
40
3
p
10 000
1 000
2SK2479
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
1.0
0.1
rth(t) - Transient Thermal Resistance - ˚C/W
0.01
10
µ
100
µ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
TA = –25 ˚C
25 ˚C
1.0
75 ˚C
125 ˚C
0.1
Rth(ch-a) = 83.3(˚C/W)
Rth(ch-c) = 1.79(˚C/W)
Single Pulse
Tc = 25 ˚C
1 m 10 m 100 m 1 10 100 1 000
PW - Pulse Width - s
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VDS = 20 V
Pulsed
10
ID = 3 A
1.5 A
0.6 A
5
Pulsed
1
| yfs | - Forward Transfer Admittance - S
1
0.1
I
D - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
15
10
5
0
RDS(on) - Drain to Source On-State Resistance - Ω
0.1
1.0 10
ID - Drain Current - A
1.0 10
Pulsed
VGS = 10 V
0
RDS(on) - Drain to Source On-State Resistance - Ω
10
V
GS - Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
5
0
VGS(off) - Gate to Source Cutoff Voltage - V
–50
0 50 100 150
ch - Channel Tem
T
20 30
VDS = 10 V
I
D = 1 mA
erature - ˚C
4
2SK2479
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
0
–50
RDS(on) - Drain to Source On-State Resistance - Ω
0
ch - Channel Temperature - ˚C
T
50
100 150
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1 000
VGS = 0
f = 1 MHz
100
V
GS = 10 V
I
D = 2 A
Ciss
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
VGS = 10 V
1
ISD - Diode Forward Current - A
0
0.5
VSD - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
1 000
100
VGS = 0 V
1.0
Pulsed
1.5
tr
10
Ciss, Coss, Crss - Capacitance - pF
1.0
1.0
10 000
1 000
100
10 100 1 000
V
DS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/ s
GS = 0
V
Coss
Crss
td(off)
tf
10
td(on), tr, td(off), tf - Switching Time - ns
1.0
0.1
1.0 10 100
td(on)
V
DD = 150 V
VGS = 10 V
RG = 10 Ω
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
µ
800
600
VDD = 450 V
ID = 3 A
VGS
300 V
150 V
400
16
14
12
10
8
6
200
4
trr - Reverse Recovery time - ns
10
0.1
1.0 10 100
I
D - Drain Current - A
VDS - Drain to Source Voltage - V
0
VDS
6 121827
Q
g - Gate Charge - nC
2
VGS - Gate to Source Voltage - V
0
5
2SK2479
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
10
IAS = 3 A
1.0
VDD = 150 V
VGS = 20 V → 0
IAS - Single Avalanche Current - A
RG = 25 Ω
100
µ
1 m 10 m 100 m
L - Inductive Load - H
E
AS
= 5.4 mJ
SINGLE AVALANCHE ENERGY
DERATING FACTOR
160
140
120
100
80
60
40
Energy Derating Factor - %
20
0
50 75 100 125 150
25
Starting T
ch - Starting Channel Temperature - ˚C
VDD = 150 V
R
G
= 25 Ω
V
GS
= 20 V → 0
I
AS
≤ 3.0 A
6
2SK2479
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system. TEI-1202
Quality grade on NEC semiconductor devices. IEI-1209
Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213
Guide to quality assurance for semiconductor devices. MEI-1202
Semiconductor selection guide. MF-1134
Power MOS FET features and application switching power supply. TEA-1034
Application circuits using Power MOS FET. TEA-1035
Safe operating area of Power MOS FET. TEA-1037
7
2SK2479
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
8
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