Datasheet 2SK2462 Datasheet (NEC)

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK2462 is N-Channel MOS Field Effect Transistor de-

signed for high current switching applications.

2SK2462

PACKAGE DIMENSIONS

(in millimeters)

FEATURES

• Low On-Resistance

RDS(on)1 = 0.14 Ω MAX. (@ VGS = 10 V, ID = 8.0 A)

DS(on)2 = 0.17 Ω MAX. (@ VGS = 4 V, ID = 8.0 A)

R

• Low Ciss Ciss = 790 pF TYP.

• Built-in G-S Gate Protection Diodes

• High Avalanche Capability Ratings

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage VDSS 100 V

Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±15 A
Drain Current (pulse)* ID(pulse) ±60 A

Total Power Dissipation (T

Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W

Channel Temperature Tch 150 ˚C

Storage Temperature T

Single Avalanche Current** IAS 15 A

Single Avalanche Energy** EAS 22.5 mJ

µ

* PW ≤ 10
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0

s, Duty Cycle ≤ 1 %

c = 25 ˚C) PT1 30 W

stg –55 to +150 ˚C

10.0 ±0.3

15.0 ±0.3

0.7 ±0.1

123

MP-45F(ISOLATED TO-220)

3.2 ±0.2

3 ±0.1

4 ±0.2

1.3 ±0.2

1.5 ±0.2

2.542.54

4.5 ±0.2

2.7 ±0.2

12.0 ±0.2

MIN.

13.5

2.5 ±0.1

0.65 ±0.1

1. Gate

2. Drain

3. Source

Drain

Document No. D10031EJ1V0DS00
Date Published May 1995 P
Printed in Japan

Gate

Gate Protection
Diode

The diode connected between the gate and source of the

transistor serves as a protector against ESD. When this

device is actually used, an additional protection circuit is

externally required if a voltage exceeding rated voltage may

be applied to this device.

Body
Diode

Source

©

1995

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

2SK2462

CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS

Drain to Source On-Resistance RDS(on)1 0.10 0.14 VGS = 10 V, ID = 8.0 A

Drain to Source On-Resistance RDS(on)2 0.12 0.17 VGS = 4 V, ID = 8.0 A

Gate to Source Cutoff Voltage VGS(off) 1.0 1.6 2.0 VDS = 10 V, ID = 1 mA

Forward Transfer Admittance | yfs | 7.0 14 VDS = 10 V, ID = 8.0 A

Drain Leakage Current IDSS 10 VDS = 100 V, VGS = 0
Gate to Source Leakage Current IGSS ±10 VGS = ±20 V, VDS = 0

Input Capacitance Ciss 790 VDS = 10 V

Output Capacitance Coss 280 VGS = 0

Reverse Transfer Capacitance Crss 88 f = 1 MHz

Turn-On Delay Time td(on) 16 ID = 8.0 A

Rise Time tr 110 VGS(on) = 10 V

Turn-Off Delay Time td(off) 88 VDD = 50 V
Fall Time tf 62 RG = 10 Ω

Total Gate Charge QG 33 ID = 15 A

Gate to Source Charge QGS 5.4 VDD = 80 V

Gate to Drain Charge QGD 25 VGS = 10 V

Body Diode Forward Voltage VF(S-D) 1.1 IF = 15 A, VGS = 0

Reverse Recovery Time trr 160 IF = 15 A, VGS = 0

Reverse Recovery Charge Qrr 670 di/dt = 100 A/µs

UNIT

Ω
Ω

V

S

µ

A

µ

A

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

nC

Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time

V

GS

= 20 → 0 V

PG

R

DD

V

G

= 25 Ω

50 Ω

I

D

D.U.T.

I

AS

BV

DSS

Starting T

L

V

DD

PG.

V

GS

0

V

DS

t

µ

t = 1 s
Duty Cycle ≤ 1 %

ch

R

G

= 10 Ω

D.U.T.

R

G

Test Circuit 3 Gate Charge

PG.

I

G

= 2 mA

50 Ω

D.U.T.

R

L

V

DD

L

R

V

DD

V

GS

Wave
Form

I

D

Wave
Form

V

I

GS

0

D

10 %

10 %

0

t

d (on)

90 %

t

on

90 %

V

GS (on)

90 %

I

D

10 %

t

d (off)

t

t

r

f

t

off

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

2

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

g

2SK2462

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

20 40 60 80 100 120 140 160

TC - Case Temperature - ˚C

FORWARD BIAS SAFE OPERATING AREA

100

R

DS(on)

(at V

Limited

= 10 V)

GS

ID(DC)

ID(pulse)

100 s

µ

1 ms

10

Power Dissipation Limited

10ms

200ms

DC

1

ID - Drain Current - A

TC = 25

˚C

Single Pulse

0.1
1

10 100 1000

VDS - Drain to Source Voltage - V

PW=10 s

µ

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

70

60

50

40

30

20

10

PT - Total Power Dissipation - W

0

20 40 60 80 100 120 140 160

TC - Case Temperature - ˚C

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

50

40

VGS = 10 V

30

20

ID - Drain Current - A

10

0

2

VDS - Drain to Source Voltage - V

4

VGS = 6 V

VGS = 4 V

6

Pulsed

8

FORWARD TRANSFER CHARACTERISTICS

1000

100

10

TA = –25 ˚C

25 ˚C

125 ˚C

ID - Drain Current - A

1

0

51015

GS - Gate to Source Volta

V

Pulsed

VDS=10 V

e - V

3

1 000

100

10

1

0.1

0.01

rth(t) - Transient Thermal Resistance - ˚C/W

0.001

µµ

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

1000

TA = – 25 ˚C

25 ˚C

100

75 ˚C

125 ˚C

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

Rth(ch-a) = 62.5 ˚C/W

th(ch-c) = 4.17 ˚C/W

R

100

1 m 10 m 100 m 1 10 100 1 000 10

PW - Pulse Width - s

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

VDS =10 V
Pulsed

140

120

100

80

2SK2462

Single Pulse

Pulsed

ID=7.5 A

10

1

| yfs | - Forward Transfer Admittance - S

0.1

1

I

D- Drain Current - A

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

0.3

0.2

V

GS = 4 V

0.1
VGS =10 V

0

RDS(on) - Drain to Source On-State Resistance - Ω

1

10 100

ID - Drain Current - A

10 100

Pulsed

60

40

20

0

RDS(on) - Drain to Source On-State Resistance - mΩ

10

V

GS - Gate to Source Voltage - V

GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE

2.0

1.5

1.0

0.5

0

VGS(off) - Gate to Source Cutoff Voltage - V

–50

0 50 100 150

ch - Channel Temperature - ˚C

T

20 30

VDS = 10 V
I

D = 1 mA

4

2SK2462

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE

0.4

0.3

0.2

0.1

VGS = 4 V

VGS = 10 V

0

RDS(on) - Drain to Source On-State Resistance - Ω

–50

0

ch - Channel Temperature - ˚C

T

50

100 150

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

10 000

1 000

Ciss

VGS = 0
f = 1 MHz

D = 8.0 A

I

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

1000

100

10

4 V

VGS = 0

1

ISD - Diode Forward Current - A

0

1.0

VSD - Source to Drain Voltage - V

SWITCHING CHARACTERISTICS

1 000

td(off)

100

2.0

Pulsed

3.0

tr

100

Crss

Ciss, Coss, Crss - Capacitance - pF

10

1

10 100 1 000

VDS - Drain to Source Voltage - V

REVERSE RECOVERY TIME vs.
DRAIN CURRENT

10 000

1 000

100

trr - Reverse Recovery time - ns

10

0.1

1.0 10 100

ID - Drain Current - A

Coss

di/dt = 50 A/ s

GS = 0

V

µ

tf

10

td(on), tr, td(off), tf - Switching Time - ns

1.0

0.1

1.0 10 100

td(on)

ID - Drain Current - A

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

80

60

VDS

40

20

VDS - Drain to Source Voltage - V

0

10 20 30 40

Qg - Gate Charge - nC

VDD = 50 V
VGS = 10 V
RG = 10 Ω

DD = 80 V

V

ID = 15 A

VGS

16

14

12

10

8

6

4

2

VGS - Gate to Source Voltage - V

5

2SK2462

g

SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD

100

IAS = 15 A

10

E

AS

= 22.5mJ

1.0

- Single Avalanche Current - A

VDD = 50 V

AS

I

V

GS

= 20 V → 0

R

G

= 25 Ω

10 100 1 m 10 m

µµ

L - Inductive Load - H

SINGLE AVALANCHE ENERGY
DERATING FACTOR

160

140

120

100

80

60

40

Energy Derating Factor - %

20

0

50 75 100 125 150 175

25

Startin

Tch - Starting Channel Temperature - ˚C

VDD = 50 V
R

G

= 25 Ω

V

GS

= 20 V → 0

<

I

AS

15 A

=

6

2SK2462

REFERENCE

Document Name Document No.

NEC semiconductor device reliability/quality control system. TEI-1202

Quality grade on NEC semiconductor devices. IEI-1209

Semiconductor device mounting technology manual. IEI-1207

Semiconductor device package manual. IEI-1213

Guide to quality assurance for semiconductor devices. MEI-1202

Semiconductor selection guide. MF-1134

Power MOS FET features and application switching power supply. TEA-1034

Application circuits using Power MOS FET. TEA-1035

Safe operating area of Power MOS FET. TEA-1037

7

2SK2462

[MEMO]

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document.
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property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
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“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
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device before using it in a particular application.

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If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11