Datasheet 2SK2383 Datasheet (Panasonic)

Power F-MOS FETs

2SK2383

Silicon N-Channel Power F-MOS FET

■ Features

●Avalanche energy capacity guaranteed

●High-speed switching

●Low ON-resistance

●No secondary breakdown

■ Applications

●Contactless relay

●Diving circuit for a solenoid

●Driving circuit for a motor

●Control equipment

●Switching power supply

■ Absolute Maximum Ratings (T

Parameter

Drain to Source breakdown voltage Gate to Source voltage

Drain current

DC

Pulse Avalanche energy capacity Allowable power dissipation

TC = 25°C

Ta = 25°C Channel temperature Storage temperature

*

L = 2mH, IL = 13A, 1 pulse

Symbol

V V I

D

I

DP

EAS

P

D

T

ch

T

stg

DSS

GSS

*

= 25°C)

C

Ratings

−55 to +150

500 ±30 ±13 ±26 170 100

3

150

Unit

V V A A

mJ

W

°C °C

4.5

4.0

2.0±0.2

1.1±0.1

5.45±0.3

0.7±0.1

3.3±0.3

15.5±0.5

5˚

123

φ3.2±0.1

2.0 2.0 1.2 10.0

5.45±0.3

2.0

26.5±0.5

18.6±0.5

5.5±0.3

unit: mm

3.0±0.3

5˚ 5˚

23.4

5˚

0.7±0.1

1: Gate 2: Drain 3: Source

TOP-3E Package

22.0±0.5

■ Electrical Characteristics (T

Parameter

Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere

C

Symbol

I

DSS

I

GSS

V

DSS

V

th

R

DS(on)

| Yfs | V

DSF

C

iss

C

oss

C

rss

t

d(on)

t

r

t

f

t

d(off)

R

th(ch-c)

R

th(ch-a)

= 25°C)

Conditions

VDS = 400V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 7A VDS = 25V, ID = 7A IDR = 13A, VGS = 0

VDS = 20V, VGS = 0, f = 1MHz

VDD = 150V, ID = 7A VGS = 10V, RL = 21.4Ω

min

500

1

5

typ

0.45 8

1700

300 120

30 70 90

210

max

100

±1

5

0.6

−1.7

1.25

41.67

Unit

µA µA

V V

Ω

S

V pF pF pF

ns ns ns

ns °C/W °C/W

1

Power F-MOS FETs 2SK2383

Area of safe operation (ASO) PD  Ta IAS  L-load

100

I

DP

I

D

10

) A

(

D

1

Drain current I

0.1

0.01 1 10 100 1000

Non repetitive pulse

=25˚C

T

C

DC

1ms

10ms

100ms

Drain to source voltage VDS (V

I

 V

D

GS

10

VDS=25V

8

)

A

(

D

6

4

Drain current I

TC=150˚C

2

0

100˚C

07314625

Gate to source voltage VGS (V

t=100

0˚C 25˚C

µs

)

120

) W

(

100

D

80

60

40

20

Allowable power dissipation P

0

020

(1) TC=Ta (2) Without heat sink

=3W)

(P

D

(1)

(2)

40 60 80 100 120 140 160

Ambient temperature Ta (˚C

Vth  T

6

)

5

V

(

th

4

3

2

1

Gate threshold voltage V

0

0 25 50 75 100 125 150

C

Case temperature TC (˚C

VDS=25V

=1mA

I

D

)

100

30

) A

(

10

3

1

Avalanche current IAS

0.3

0.1

0.1 10.3 3 10

)

L-load (mH

VDS  V

50

) V

(

40

DS

30

20

10

Drain to source voltage V

0

0 5 10 15 20 25 30

Gate to source voltage VGS (V

GS

)

TC=25˚C

170mJ

TC=25˚C

=26A

I

D

13A

6.5A

)

R

 I

DS(on)

1.2

)

VGS=10V

Ω

(

1.0

DS(on)

0.8

0.6

0.4

0.2

Drain to source ON-resistance R

0

4 6 8 10121416

02

T

C

=150˚C

100˚C

Drain current ID (A

2

D

25˚C

0˚C

| Yfs |  I

16

) S

(

14

|

fs

12

10

8

6

4

2

Forward transfer admittance |Y

0

02

)

100˚C

4 6 8 10121416

Drain current ID (A

25˚C

D

VDS=25V T

TC=0˚C

150˚C

=25˚C

C

)

,

)

Common source

(

, Output capacitance

)

Common source

(

Input capacitance

C

, C

oss

rss

 V

iss

10000

)

pF

(

rss

,C

1000

oss

,C

iss

C

)

100

Common source

(

10

Reverse transfer capacitance

1

0 40 80 120 160 200

Drain to source voltage VDS (V

DS

f=1MHz

=25˚C

T

C

C C

C

iss

oss

rss

)

Power F-MOS FETs 2SK2383

VDS, VGS  Q

300

)

V

DS

V

250

(

DS

200

150

100

50

Drain to source voltage V

0

0 102030405060

g

V

Gate charge amount Qg (nC

ID=13A

GS

12

) V

10

(

GS

8

6

4

2

Gate to source voltage V

0

)

3