Datasheet 2SK2510 Datasheet (NEC)

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK2510 is N-Channel MOS Field Effect Transistor designed

for high current switching applications.

2SK2510

PACKAGE DIMENSIONS

(in millimeter)

FEATURES

• Super Low On-Resistance
RDS (on)1 = 20 mΩ (VGS = 10 V, ID = 20 A)

DS (on)2 = 30 mΩ (VGS = 4 V, ID = 20 A)

R

• Low Ciss Ciss = 1 600 pF TYP.

• Built-in G-S Protection Diode

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage VDSS 60 V
Gate to Source Voltage V
Drain Current (DC) ID(DC) ±40 A
Drain Current (pulse)* ID(pulse) ±160 A
Total Power Dissipation (T
Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature T
* PW ≤ 10 µs, Duty Cycle ≤ 1 %

c = 25 ˚C) PT1 35 W

GSS ±20 V

stg –55 to +150 ˚C

10.0±0.3 4.5±0.2

15.0±0.3

0.7±0.1

2.54

123

MP-45F (ISOLATED TO-220)

3.2±0.2

3±0.14±0.2

1.5±0.2

2.54

Drain

2.7±0.2

12.0±0.213.5MIN.

2.5±0.11.3±0.2

0.65±0.1

1. Gate

2. Drain

3. Source

The diode connected between the gate and source of the transistor

serves as a protector against ESD. When this device is actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.

Document No. D10290EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan

Gate
Gate

Protection
Diode

Source

Body
Diode

©

1995

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

2SK2510

CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-Resistance RDS (on)1 16 20 VGS = 10 V, ID = 20 A
Drain to Source On-Resistance RDS (on)2 24 30 VGS = 4 V, ID = 20 A
Gate to Source Cutoff Voltage VGS (off) 1.0 1.5 2.0 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs |13 VDS = 10 V, ID = 20 A
Drain Leakage Current IDSS 10 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±10 VGS = ±20 V, VDS = 0
Input Capacitance Ciss 1 600 VDS = 10 V
Output Capacitance Coss 780 VGS = 0
Reverse Transfer Capacitance Crss 350 f = 1 MHz
Turn-On Delay Time td (on) 35 ID = 20 A
Rise Time tr 380 VGS (on) = 10 V
Turn-Off Delay Time td (off) 220 VDD = 30 V
Fall Time tf 300 RG = 10 Ω
Total Gate Charge QG 69 ID = 40 A
Gate to Source Charge QGS 5.0 VDD = 48 V
Gate to Drain Charge QGD 26 VGS = 10 V
Body Diode Forward Voltage VF (S-D) 1.0 IF = 40 A, VGS = 0
Reverse Recovery Time trr 72 IF = 40 A, VGS = 0
Reverse Recovery Charge Qrr 130 di/dt = 100 A/µs

UNIT

mΩ
mΩ

V
S

µ

A

µ

A
pF
pF
pF

ns
ns
ns

ns
nC
nC
nC

V

ns
nC

Test Circuit 1 Switching Time

D.U.T.

R

G

R

G

= 10 Ω

V

GS

0

t = 1 s

PG.

t

µ

V

V

GS

Wave Form

I

D

Wave Form

GS

10 %

0

I

D

90 %

10 %

0

t

d (on)trtd (off)tf

t

on

90 %

GS (on)

V

90 %

I

D

10 %

t

off

L

R

V

DD

Test Circuit 2 Gate Charge

D.U.T.

G

= 2 mA

I

PG.

50 Ω

Duty Cycle ≤ 1 %

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

R

L

V

DD

2

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

2SK2510

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

20 40 60 80 100 120 140 160

C - Case Temperature - ˚C

T

FORWARD BIAS SAFE OPERATING AREA

1000

I

D(pulse)

100

I

D(DC)

Limited

DS(on)

R

10

200 ms

Dissipation Limited

DC

ID - Drain Current - A

1 ms

10 ms

PW = 100 s

µ

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

70

60

50

40

30

20

10

PT - Total Power Dissipation - W

0

40 60 80 100 120 140 160

20

C - Case Temperature - ˚C

T

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

200

100

ID - Drain Current - A

Pulsed

VGS = 20 V

VGS = 10 V

VGS = 4 V

TC = 25 ˚C
Single Pulse

1

0.1

1 10 100 0

DS - Drain to Source Voltage - V

V

FORWARD TRANSFER CHARACTERISTICS

1 000

TA = –25 ˚C

25 ˚C

125 ˚C

100

10

ID - Drain Current - A

1.0

0

5

GS - Gate to Source Voltage - V

V

10 15

Pulsed

VDS = 10 V

1

DS - Drain to Source Voltage - V

V

2

3

4

3

1 000

100

10

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

R

th(ch-a)

= 62.5 ˚C/W

2SK2510

1

0.1

0.01

- Transient Thermal Resistance - ˚C/W

th(t)

r

0.001
100

µ

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

1000

TA = –25 ˚C

100

25 ˚C
75 ˚C

125 ˚C

10

| - Forward Transfer Admittance - S

fs

1

| y

1

10

I

D

- Drain Current - A

1 m 10 m 100 m 1 10 100 1 000 10

µ

VDS = 10 V
Pulsed

100 1 000

PW - Pulse Width - s

- Drain to Source On-State Resistance - mΩ

DS(on)

R

th(ch-c)

= 3.57 ˚C/W

R

Single Pulse

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

Pulsed

60

40

20

I

D

= 20 A

0

10

V

GS

- Gate to Source Voltage - V

20 30

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

80

Pulsed

GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE

VDS = 10 V
I

2

D

= 1 mA

60

40

VGS = 4 V

1

20

- Gate to Source Cutoff Voltage - V

GS(off)

0

V

–50

T

0 50 100 150

ch

- Channel Temperature - ˚C

- Drain to Source On-State Resistance - mΩ

DS(on)

R

VGS = 10 V

0

1.0
I

D

- Drain Current - A

10 100

4

2SK2510

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE

40

30

20

10

- Drain to Source On-State Resistance - mΩ

DS(on)

R

0

–50

0

ch

- Channel Temperature - ˚C

T

50

100 150

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

100 000

10 000

- Capacitance - pF

rss

, C

1 000

oss

, C

iss

C

C

oss

C

rss

100

0.1

1 10 100

DS

- Drain to Source Voltage - V

V

VGS = 4 V

VGS = 10 V

D

= 20 A

I

VGS = 0
f = 1 MHz

C

iss

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

100

10

1

- Diode Forward Current - A

SD

0.1

I

0

0.5

SD

- Source to Drain Voltage - V

V

SWITCHING CHARACTERISTICS

1 000

t

d(off)

100

- Switching Time - ns

f

, t

10

d(off)

, t

r

, t

d(on)

t

1.0

0.1

t

f

1.0 10 100

D

- Drain Current - A

I

VGS = 0

t

r

t

d(on)

1.0

V

DD
GS

V
R

G

Pulsed

= 30 V
= 10 V

= 10 Ω

1.5

REVERSE RECOVERY TIME vs.
DRAIN CURRENT

1 000

100

10

- Reverse Recovery time - ns

rr

t

1.0

0.1

1.0 10 100

D

- Drain Current - A

I

di/dt = 100 A/ s

GS

= 0

V

µ

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

80

60

VDD = 12 V

40

V

DS

30 V
48 V

V

20

- Drain to Source Voltage - V

DS

V

0

20 40 60

g

- Gate Charge - nC

Q

ID = 40 A

GS

80

16
14
12
10
8
6
4

- Gate to Source Voltage - V

2

GS

V

0

5

REFERENCE

Document Name Document No.
NEC semiconductor device reliability/quality control system. TEI-1202
Quality grade on NEC semiconductor devices. IEI-1209
Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213
Guide to quality assurance for semiconductor devices. MEI-1202
Semiconductor selection guide. MF-1134
Power MOS FET features and application switching power supply. TEA-1034
Application circuits using Power MOS FET. TEA-1035
Safe operating area of Power MOS FET. TEA-1037

2SK2510

6

[MEMO]

2SK2510

7

2SK2510

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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11

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