Datasheet 2SK2368, 2SK2367 Datasheet (NEC)

Body
Diode

Source

Drain

Gate

DATA SHEET

MOS FIELD EFFECT TRANSISTORS

2SK2367/2SK2368

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor

designed for high voltage switching applications.

FEATURES

• Low On-Resistance

2SK2367: RDS (on) = 0.5 Ω (VGS = 10 V, ID = 8.0 A)

2SK2368: R

• Low Ciss Ciss = 1 600 pF TYP.

• High Avalanche Capability Ratings

DS (on) = 0.6 Ω (VGS = 10 V, ID = 8.0 A)

PACKAGE DIMENSIONS

(in millimeter)

15.7 MAX.

1.06.0

123

3.2±0.2

4

4.5±0.2

4.7 MAX.

1.5

7.0

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage (2SK2367/2SK2368)

Gate to Source Voltage V

Drain Current (DC) ID (DC) ±15 A
Drain Current (pulse)* ID (pulse) ±60 A

Total Power Dissipation (T

Total Power Dissipation (TA = 25 ˚C) PT2 3.0 W

Channel Temperature Tch 150 ˚C

Storage Temperature T

Single Avalanche Current** IAS 15 A

Single Avalanche Energy** EAS 161 mJ

µ

* PW ≤ 10
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0

s, Duty Cycle ≤ 1 %

c = 25 ˚C) PT1 120 W

VDSS 450/500 V

GSS ±30 V

stg –55 to +150 ˚C

19 MIN. 20.0±0.2

3.0±0.2

5.45 5.45

1.0±0.2

MP-88

2.8±0.10.6±0.12.2±0.2

1. Gate

2. Drain

3. Source

4. Fin (Drain)

Document No. TC-2506
(O. D. No. TC-8065)
Date Published December 1994 P
Printed in Japan

1995

©

1994

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

2SK2367/2SK2368

CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS

Drain to Source On-Resistance RDS (on) 0.4 0.5 VGS = 10 V 2SK2367

UNIT

Ω

0.5 0.6 ID = 8.0 A 2SK2368

Gate to Source Cutoff Voltage VGS (off) 2.5 3.5 VDS = 10 V, ID = 1 mA

Forward Transfer Admittance | yfs | 5.0 VDS = 10 V, ID = 8.0 A

Drain Leakage Current IDSS 100 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±100 VGS = ±30 V, VDS = 0

Input Capacitance Ciss 1 600 VDS = 10 V

Output Capacitance Coss 300 VGS = 0

Reverse Transfer Capacitance Crss 30 f = 1 MHz

Turn-On Delay Time td (on) 30 ID = 8.0 A

Rise Time tr 40 VGS = 10 V

Turn-Off Delay Time td (off) 70 VDD = 150 V

Fall Time tf 25

Total Gate Charge QG 43 ID = 15 A

Gate to Source Charge QGS 10 VDD = 400 V

Gate to Drain Charge QGD 20 VGS = 10 V

Body Diode Forward Voltage VF (S-D) 1.0 IF = 15 A, VGS = 0

Reverse Recovery Time trr 400 IF = 15 A, VGS = 0

Reverse Recovery Charge Qrr 1.8 di/dt = 50 A/µs

V

S

µ

nA

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

µ

A

R

= 10 Ω RL = 18.8 Ω

G

C

Test Circuit 1 Avalanche Capability

D.U.T.

R

G

= 25 Ω

PG.

VGS = 20 - 0 V

50 Ω

BV

DSS

I

AS

I

D

V

DD

Starting T

Test Circuit 3 Gate Charge

D.U.T.

I

G

PG.

= 2 mA

50 Ω

R

V

Test Circuit 2 Switching Time

L

R

DD

V

PG.

V

GS

G

= 10 Ω

R

G

L

R

V

DD

0

D.U.T.

V

DS

t

t = 1 us
Duty Cycle ≤ 1 %

ch

L

DD

V

GS

Wave Form

I

D

Wave Form

V

GS

10 %

0

I

D

90 %

10 %

0

td (on) tr td (off) tf

ton toff

90 %

GS (on)

V

90 %

ID

10 %

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

2

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

20 140 160

100

T

C

- Case Temperature - ˚C

dT - Percentage of Rated Power - %

FORWARD BIAS SAFE OPERATING AREA

10 100 1 000

100

V

DS

- Drain to Source Voltage - V

I

D

- Drain Current - A

80

0

40

1.0

10

0.1

60

20

6040 80 100 120

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

20 140 160

100

T

C

- Case Temperature - ˚C

P

T

- Total Power Dissipation - W

80

0

40

60

20

6040 80 100 120

120

DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE

51015

100

V

GS

- Gate to Source Voltage - V

I

D

- Drain Current - A

1

10

0.1

1

TC = 25 ˚C
Single Pulse

100 s

1 ms

10 ms

Power Dissipation Limited

R

DS (on)

Limited

(at V

GS

= 10 V)

0

Pulsed

TA = –25 ˚C

25 ˚C
75 ˚C

125 ˚C

I

D (pulse)

PW = 10 s

I

D (DC)

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

V

DS

- Drain to Source Voltage - V

I

D

- Drain Current - A

416812

24

16

12

8

4

0

Pulsed

VGS = 20 V

10 V

8 V
6 V

20

2SK2368

2SK2367

µ

µ

2SK2367/2SK2368

3

2SK2367/2SK2368

1 000

100

10

1

0.1

- Transient Thermal Resistance - C/W

0.01

th (ch-c) (t)

r

0.001
10 u 100 u 1 m 10 m 100 m 1 10 100 1 000

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

100

TA = –25 ˚C

25 ˚C

10

75 ˚C

125 ˚C

1.0

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

R

R

PW - Pulse Width - s

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

VDS = 10 V

1.5

Pulsed

1.0

0.5

th (ch-a)

= 41.7 ˚C/W

th (ch-c)

= 1.04 ˚C/W

TC = 25 ˚C
Single Pulse

Pulsed

ID = 10 A

5 A

2.5 A

| yfs | - Forward Transfer Admittance - S

0.1

1.0 10 100

D

- Drain Current - A

I

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

2.0

1.0

- Drain to Source On-State Resistance - Ω

DS (on)

R

0

1.0 10 100

I

D

- Drain Current - A

Pulsed

- Drain to Source On-State Resistance - Ω

DS (on)

R

0

10 20 30

GS

- Gate to Source Voltage - V

V

GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE

4.0

3.0

2.0

1.0

- Gate to Source Cutoff Voltage - V

GS (off)

V

0
–50 0 50 100 150

T

ch

- Channel Temperature - ˚C

4

2SK2367/2SK2368

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE

1.5

1.0

ID = 10 A

0.5

5 A

- Drain to Source On-State Resistance − Ω

0

DS (on)

R

–50 0 50 100 150

Tch - Channel Temperature - ˚C

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

10 000

1 000

- Capacitance - pF

rss

, C

100

oss

, C

iss

C

10

1

10 100 1 000

DS

- Drain to Source Voltage - V

V

C

rss

VGS = 10 V

VGS = 0
f = 1 MHz

C

iss

C

oss

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

100

10

1.0

- Diode Forward Current - A

SD

0.1

I

VGS = 10 V

SD

- Source to Drain Voltage - V

V

SWITCHING CHARACTERISTICS

1 000

100

- Switching Time - ns

f

, t

10

d (off)

, t

r

, t

d (on)

t

1.0

0.1

1.0 10 100

D

- Drain Current - A

I

VGS = 0

1.00.50

Pulsed

t

r

t

f

t

d(on)

t

d(off)

VDS = 150 V

GS

= 10 V

V
R

G

= 10 Ω

1.5

REVERSE RECOVERY TIME vs.
DRAIN CURRENT

1 000

- Reverse Recovery Time - ns

100

rr

t

0.1

1.0 10 100

D

- Drain Current - A

I

di/dt = 50 A/ s
V

GS

= 0

µ

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

400

ID = 10 A

VDD = 400 V

300

250 V
125 V

V

GS

200

100

- Drain to Source Voltage - V

DS

V

V

DS

0 10203040

g

- Gate Charge - nC

Q

16

14

12

10

8

6

4

- Gate to Source Voltage - V

GS

V

2

5

2SK2367/2SK2368

g

SINGLE AVALANCHE ENERGY vs.
STARTING CHANNEL TEMPERATURE

200

150

161 mJ

I

D (peak)

= I

R

G

= 25 Ω

V

GS

= 20 V → 0 V

V

DD

= 150 V

AS

100

50

- Single Avalanche Energy - mJ

AS

E

25 50 75 125 150100 175

Tch-Starting Channel Temperature - ˚C

Startin

SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD

IAS = 15 A

10

- Single Avalanche Current - A

1.0

AS

I

100 u

1.0 m 10 m 100 m

L - Inductive load - H

E

AS

= 161 mJ

R

G

= 25 Ω

DD

= 150 V

V

GS

= 20 V → 0

V
Starting T

ch

= 25 ˚C

6

2SK2367/2SK2368

REFERENCE

Document Name Document No.

NEC semiconductor device reliability/quality control system. TEI-1202

Quality grade on NEC semiconductor devices. IEI-1209

Semiconductor device mounting technology manual. IEI-1207

Semiconductor device package manual. IEI-1213

Guide to quality assurance for semiconductor devices. MEI-1202

Semiconductor selection guide. MF-1134

Power MOS FET features and application switching power supply. TEA-1034

Application circuits using Power MOS FET. TEA-1035

Safe operating area of Power MOS FET. TEA-1037

The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device is actually used, an additional protection circuit is externally required if a voltage exceeding the

rated voltage may be applied to this device.

7

2SK2367/2SK2368

[MEMO]

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.

Standard:Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots

Special:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11