Datasheet 2SK2412 Datasheet (NEC)

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK2412 is N-Channel MOS Field Effect Transistor de-

signed for high speed switching applications.

2SK2412

PACKAGE DIMENSIONS

(in millimeters)

FEATURES

• Low On-Resistance

RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 10 A)

DS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 10 A)

R

• Low Ciss Ciss = 860 pF TYP.

• Built-in G-S Gate Protection Diodes

• High Avalanche Capability Ratings

QUALITY GRADE

Standard

Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended

applications.

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage VDSS 60 V

Gate to Source Voltage VGSS ±20 V

Drain Current (DC) I

Drain Current (pulse)* ID(pulse) ±80 A

Total Power Dissipation (Tc = 25 ˚C) PT1 30 W

Total Power Dissipation (T

Channel Temperature Tch 150 ˚C

Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** I

Single Avalanche Energy** EAS 22.5 mJ

* PW ≤ 10 µs, Duty Cycle ≤ 1 %

** Starting T

ch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0

A = 25 ˚C) PT2 2.0 W

D(DC) ±20 A

AS 20 A

10.0 ±0.3

15.0 ±0.3

0.7 ±0.1

123

MP-45F(ISOLATED TO-220)

Gate

Gate Protection
Diode

3.2 ±0.2

3 ±0.1

4 ±0.2

1.3 ±0.2

1.5 ±0.2

2.542.54

4.5 ±0.2

2.7 ±0.2

12.0 ±0.2

MIN.

13.5

2.5 ±0.1

0.65 ±0.1

1. Gate

2. Drain

3. Source

Drain

Body
Diode

Source

Document No. TC-2493
(O. D. No. TC-8031)
Date Published November 1994 P
Printed in Japan

The information in this document is subject to change without notice.

©

1994

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

2SK2412

CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS

Drain to Source On-Resistance RDS(on)1 50 70 VGS = 10 V, ID = 10 A

Drain to Source On-Resistance RDS(on)2 67 95 VGS = 4 V, ID = 10 A

Gate to Source Cutoff Voltage VGS(off) 1.0 1.6 2.0 VDS = 10 V, ID = 1 mA

Forward Transfer Admittance | yfs | 7.0 15 VDS = 10 V, ID = 10 A

Drain Leakage Current IDSS 10 VDS = 60 V, VGS = 0
Gate to Source Leakage Current IGSS ±10 VGS = ±20 V, VDS = 0

Input Capacitance Ciss 860 VDS = 10 V

Output Capacitance Coss 440 VGS = 0

Reverse Transfer Capacitance Crss 110 f = 1 MHz

Turn-On Delay Time td(on) 15 ID = 10 A

Rise Time tr 120 VGS(on) = 10 V

Turn-Off Delay Time td(off) 70 VDD = 30 V
Fall Time tf 50 RG = 10 Ω

Total Gate Charge QG 27 ID = 20 A

Gate to Source Charge QGS 2.7 VDD = 48 V

Gate to Drain Charge QGD 8.9 VGS = 10 V

Body Diode Forward Voltage VF(S-D) 1.2 IF = 20 A, VGS = 0

Reverse Recovery Time trr 120 IF = 20 A, VGS = 0

Reverse Recovery Charge Qrr 350 di/dt = 100 A/µs

UNIT

mΩ
mΩ

V

S

µ

A

µ

A

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

nC

Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time

V

GS

= 20 → 0 V

PG

R

DD

V

G

= 25 Ω

50 Ω

I

D

D.U.T.

I

AS

BV

DSS

Starting T

L

V

DD

PG.

V

GS

0

V

DS

t

µ

t = 1 s
Duty Cycle ≤ 1 %

ch

R

G

= 10 Ω

D.U.T.

R

G

Test Circuit 3 Gate Charge

PG.

I

G

= 2 mA

50 Ω

D.U.T.

R

L

V

DD

L

R

V

DD

V

GS

Wave
Form

I

D

Wave
Form

V

I

GS

0

D

10 %

10 %

0

t

d (on)

90 %

t

on

90 %

V

GS (on)

90 %

I

D

10 %

t

d (off)

t

t

r

f

t

off

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

2

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

g

2SK2412

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

40 60 80 100 120 140 160

20

c - Case Temperature - ˚C

T

FORWARD BIAS SAFE OPERATING AREA

100

Limited

GS

DS (on)

R

10

D - Drain Current - A

I

(at V

= 10 V)

ID (pulse)

ID (DC)

Power Dissipation Limited

DC

1 ms

10 ms

200 ms

PW = 10 s

100 s

µ

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

50

40

30

20

10

PT - Total Power Dissipation - W

0

20 40 60 80 100 120 140 160

c - Case Temperature - ˚C

T

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

80

Pulsed

V

µ

60

VGS = 10 V

GS = 6 V

40

GS = 4 V

V

ID - Drain Current - A

20

Tc = 25 ˚C
Single Pulse

1

0.1

FORWARD TRANSFER CHARACTERISTICS

1000

100

10

D - Drain Current - A

I

1

1 23 567

0

1 10 100

V

DS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V

0

2

4681012

Pulsed

VDS = 10 V

TA = –25 ˚C

25 ˚C

125 ˚C

48

GS - Gate to Source Volta

V

e - V

3

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000

100

th (ch-a) = 62.5 ˚C/W

R

10

Rth (ch-c) = 4.17 ˚C/W

1

0.1

rth (t) - Transient Thermal Resistance - ˚C/w

0.01

µµ

10 100 1 m 10 m 100 m 1 10 100 1000

Single Pulse

PW - Pulse Width - s

2SK2412

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

100

TA = –25 ˚C

25 ˚C
75 ˚C

125 ˚C

10

fs| - Forward Transfer Admittance - S

|y

1

0 10 100

1

I

D - Drain Current - A

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

120

100

80

VGS = 4 V

VDS = 10 V
Pulsed

Pulsed

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

120

100

80

60

ID = 10 A

40

20

0

0 5 10 15 20

DS (on) - Drain to Source On-State Resistance - mΩ

R

GS - Gate to Source Voltage - V

V

GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE

2.0

1.5

Pulsed

VDS = 10 V
ID = 1 mA

60

1.0

VGS = 10 V

40

0.5

20

VGS (off) - Gate to Source Cutoff Voltage - V

0

RDS (on) - Drain to Source On-State Resistance - mΩ

1

D - Drain Current - A

I

10 100

0

–50

–25

25 75 125

0 50 100 150

Tch - Channel Temperature - ˚C

4

2SK2412

g

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE

140

120

100

VGS = 4 V

80

60

GS = 10 V

V

40

20

0

–50

–25 0 25 50 75 125 150100

RDS (on) - Drain to Source On-State Resistance - mΩCiss, Coss, Crss - Capacitance - pFtrr - Reverse Recovery Diode - ns

Tch - Channel Temperature - ˚C

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

10000

1000

Ciss

D = 10 A

I

VGS = 0
f = 1 MHz

100

10

0.1

1000

100

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

Pulsed

10 V

V

GS = 0

1

0

1.0 2.0 3.0

V

SD - Source to Drain Voltage - V

SWITCHING CHARACTERISTICS

td (off)

tr

Coss

100

10

1

DS - Drain to Source Voltage - V

V

10 100

Crss

REVERSE RECOVERY TIME vs.
DRAIN CURRENT

100

di/dt = 50 A/ s

10

VGS = 0

0.1 1.0 10 100

tf

10

td (on)

VDD = 30 V
VGS = 10 V

td (on), tr, td (off), tf - Switching Time - ns

1.0

RG = 10 Ω

0.1 1.0 10 100

I

D - Drain Current - A

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

80

70

60

50

VDS

ID = 20 A

VDD = 48 V

VGS

40

30

20

DS - Drain to Source Voltage - V ISD - Diode Forward Current - A

10

µ

V

16

14

12

10

8

6

4

2

VGS - Gate to Source Voltage - V

0

0102030

40

I

D - Drain Current - A

Q

g - Gate Char

e - nC

5

2SK2412

g

SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD

100

IAS = 20 A

10

VDD = 30 V
VGS = 20 V → 0

IAS - Single Avalanche Energy - mJ

RG = 25 Ω

1.0
10 100 1 m 10 m

µµ

L - Inductive Load - H

E

AS

= 22.5 mJ

SINGLE AVALANCHE ENERGY
DERATING FACTOR

120

100

80

60

40

20

dt - Energy Derating Factor - %

0

25 50 75 100 125 150

Tch - Starting Channel Temperature - ˚C

Startin

VDD = 30 V
RG = 25 Ω
VGS = 20 V → 0
IAS ≤ 20 A

6

2SK2412

REFERENCE

Document Name Document No.

NEC semiconductor device reliability/quality control system. TEI-1202

Quality grade on NEC semiconductor devices. IEI-1209

Semiconductor device mounting technology manual. IEI-1207

Semiconductor device package manual. IEI-1213

Guide to quality assurance for semiconductor devices. MEI-1202

Semiconductor selection guide. MF-1134

Power MOS FET features and application switching power supply. TEA-1034

Application circuits using Power MOS FET. TEA-1035

Safe operating area of Power MOS FET. TEA-1037

The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device is actually used, an additional protection circuit is externally required if a voltage exceeding the

rated voltage may be applied to this device.

7

[MEMO]

2SK2412

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear
reactor control systems and life support systems. If customers intend to use NEC devices for above applications
or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact
our sales people in advance.
Application examples recommended by NEC Corporation

Standard:Computer, Office equipment, Communication equipment, Test and Measurement equipment,

Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc.

Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime

systems, etc.

M4 92.6