Datasheet 2SK2341 Datasheet (NEC)

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

2SK2341

DESCRIPTION

The 2SK2341 is N-channel Power MOS Field Effect Transis-

tor designed for high voltage switching applications.

FEATURES

Low On-state Resistance

•

RDS(on) = 0.26 Ω MAX. (VGS = 10 V, ID = 6.0 A)
LOW Ciss Ciss = 1090 pF TYP.

•

High Avalanche Capability Ratings

•

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage VDSS 250 V
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) ID (DC) ±11 A
Drain Current (pulse) I
Total Power Dissipation (TC = 25 °C) PT1 35 W
Total Power Dissipation (Ta = 25 °C) P T2 2.0 W
Storage Temperature T
Channel Temperature Tch 150 °C
Single Avalanche Current IAS** 11 A
Single Avalanche Energy E

*PW ≤ 10 µs, Duty Cycle ≤ 1 %
**Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0

D (pulse)* ±44 A

stg –55 to +150 °C

AS** 320 mJ

15.0 ± 0.3

0.7 ± 0.1

2.54 TYP.

PACKAGE DIMENSIONS

(in millimeters)

10.0 ± 0.3

123

123

MP-45F(SIOLATED TO-220)

φ3.2 ± 0.2

3 ± 0.1

12.0 ± 0.2

4 ± 0.2

13.5 MIN.

1.3 ± 0.2

1.5 ± 0.2

2.54 TYP.

Drain (D)

4.5 ± 0.2

0.65 ± 0.1

1. Gate

2. Drain

3. Source

2.7 ± 0.2

2.5 ± 0.1

The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this device
is actually used, an additional protection circuit is externally
required if a voltage exceeding the rated voltage may be
applied to this device.

Document No. TC-2511

(O.D. No. TC–8070)
Date Published January 1995 P
Printed in Japan

Gate (G)

Source (S)

Body diode

©

1995

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

Drain to Source On-state Resistance RDS(on) 0.21 0.26 Ω VGS = 10 V, ID = 6 A

Gate to Source Cutoff Voltage VGS(off) 2.0 4.0 V VDS = 10 V, ID = 1 mA
Forward Transfer Admittance  yfs  3.0 S VDS = 10 V, ID = 6 A

Drain Leakage Current IDSS 100
Gate to Source Leakage Current IGSS ±100 nA VGS = ±30 V, VDS = 0

Input Capacitance Ciss 1090 pF VDS = 10 V

Output Capacitance Coss 420 pF VGS = 0

Reverse Transfer Capacitance Crss 80 pF f = 1 MHz

Turn-On Delay Time td(on) 20 ns VGS = 10 V

Rise Time tr 20 ns VDD = 150 V
Turn-Off Delay Time td(off) 50 ns ID = 6 A, RG = 10 Ω
Fall Time tf 15 ns RL = 25 Ω

Total Gate Charge QG 33 nC VGS = 10 V

Gate to Source Charge QGS 6.0 nC ID = 11 A

Gate to Drain Charge QGD 13 nC VDD = 200 V

Diode Forward Voltage VF(S-D) 1.0 V IF = 11 A, VGS = 0

Reverse Recovery Time trr 220 ns 1F = 11 A

Reverse Recovery Charge Qrr 1.0

µ

A VDS = 250V, VGS = 0

µ

C di/dt = 50 A/µs

2SK2341

Test Circuit 1 : Avalanche Capability Test Circuit 2 : Switching Time

V

GS

= 20 → 0 V

PG.

G

R

V

DD

= 25 Ω

50 Ω

I

D

D.U.T.

I

AS

BV

DSS

V

Starting T

L

V

DD

PG.

V

GS

0

DS

ch

τ

µ

τ = 1 s

Duty Cycle ≤ 1%

G

R

D.U.T.

R

G

= 10 Ω

V

GS

Wave
Form

I

D

Wave
Form

V

I

D

L

R

V

DD

Test Circuit 3 : Gate Charge

D.U.T.

G

= 2 mA

PG.

I

50 Ω

R

L

V

DD

GS

GS (on)

10 %

0

10 %

0

td(on) tr td (off) tf

V

90 %

ID

ton toff

90 %

90 %

10 %

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

2

TYPICAL CHARACTERISTICS (TA = 25 °C)

2SK2341

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

20 140 160

6040 80 100 120

C - Case Temperature - °C

T

FORWARD BIAS SAFE OPRATING AREA

100

ID (pulse)

Limited

10

DS (on)

R

ID (DC)

10 ms

200 ms

PW = 100 s

1 ms

TC = 25 °C
Single Pulse

µ

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

60

50

40

30

20

10

PT - Total Power Dissipation - W

0

20 140 160

6040 80 100 120

T

C - Case Temperature - °C

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

40

30

20 V

20

Pulsed

10 V

VGS = 8 V

ID - Drain Current - A

1

10 100 1 000

V

DS - Drain to Source Voltage - (V)

TRANSFER CHARACTERISTICS

100

TA = –25 °C

25 °C

10

75 °C

125 °C

1.0

ID - Drain Current - A

0.1
0

VDS - Drain to Source Voltage - V

DC

VDS = 10 V
Pulsed

51015

10

ID - Drain Current - A

0

V

DS - Drain to Source Voltage - V

51510

3

2SK2341

1000

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

100

10

1

rth (ch-c) (t) (°C/W)

0.1

0.01

0.001
10 100 1 m 10 m 100 m 1 10 100 1000

µµ

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

TA = –25 °C

10

25 °C
75 °C

125 °C

VDS = 10 V
Pulsed

PW - Pulse Width - s

PW - Pulse Width - s

Rth (ch-a) = 62.5 °C/W

Rth (ch-c) = 3.57 °C/W

TC = 25 °C
Single Pulsed

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

2.0
Pulsed

1.0

0.1

yfs - Forward Transfer Admittance - S

1.0 10 100

I

D - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT

1.5
VGS = 10 V

Pulsed

1.0

0.5

0

0.1 10 100

RDS (on) - Drain to Source On-State Resistance - Ω

1.0

I

D - Drain Current - A

1.0

ID = 16 A

0

RDS (on) - Drain to Source On-State Resistance - Ω

10

VGS - Gate to Source Voltage - V

GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE

5.0

4.0

3.0

2.0

1.0

VGS (off) - Gate to Source Cutoff Voltage - V

–50 0 50 100 150

T

ch - Channel Temperature - °C

8.0 A

3.2 A

20 30

VDS = 10 V
I

D = 1 mA

4

2SK2341

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE

0.6

0.5

ID = 8.0 V
V

GS = 10 V

0.4

0.3

0.2

0.1

0

RDS (on) - Drain to Source On-State Resistance - Ω

–50 0 50 100 150

T

ch - Channel Temperature - °C

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

VGS = 0
f = 1 MHz

1000

Ciss

Coss

100

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

100

10

10 V

1.0

ISD - Diode Forward Current - A

0.1

V

SD - Source to Drain Voltage - V

SWITCHING CHARACTERISTICS

1000

100

10

VGS = 0

1.00.50

td (off)

Pulsed

1.5

tr

tf

td (on)

Crss

Ciss, Coss, Crss - Capacitance - pF

10

1.0 10 100

DS - Drain to Source Voltage - V

V

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

250

ID = 11 A

200

VDD = 200 V

125 V

VGS

50 V

150

100

50

VDS

VDS - Drain to Source Voltage - V

0

01020

Qg - Gate Charge - nC

30

1000

td (on), tr, td (off), tf - Switching Time - ns

12

10

8

1000

6

4

2

VGS - Gate to Source Voltage - V

trr - Reverse Recovery Time - ns

0

0.1

100

0.1

VDS = 125 V
V

GS = 10 V
G = 10 Ω

R

1.0 10 100

ID - Drain Current - A

REVERSE RECOVERY TIME vs.
REVERSE DRAIN CURRENT

di/dt = 50 A/ s

GS = 0

V

1.0 10 1000.1

Diode Forward Current - A

µ

5

2SK2341

SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD

IAS = 11 A

10

VDD = 150 (V)
R

G = 25 (Ω)

1.0

IAS - Single Avalanche Curent - A

V

GS = 20 (V) → 0

10

µµ

100

L - Inductive Load - H

E

AS

= 320 (mJ)

1 m 10 m

SINGLE AVALANCHE ENERGY vs.
STARTING CHANNEL TEMPERATURE

400

300

200

100

EAS - Single Avalanche Energy - mJ

0

25 50 75 125 175100

Starting T

ch - Starting Channel Temperature - °C

VDD = 150 V
R

G = 25 Ω

V

GS = 20 V → 0

<

I

AS 16 A

=

150

6

REFERENCE

Document Name Document No.

NEC semiconductor device reliability/quality control system. TEI-1202

Quality grade on NEC semiconductor devices. IEI-1209

Semiconductor device mounting technology manual. IEI-1207

Semiconductor device package manual. IEI-1213

Guide to quality assurance for semiconductor devices. MEI-1202

Semiconductor selection guide. MF-1134

Power MOS FET features and application switching power supply. TEA-1034

Application circuits using Power MOS FET. TEA-1035

Safe operating area of Power MOS FET. TEA-1037

2SK2341

7

2SK2341

[MEMO]

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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
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property rights of third parties by or arising from use of a device described herein or any other liability arising
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copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.

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audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots

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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11