Datasheet 2SK2358, 2SK2357 Datasheet (NEC)

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2357/2SK2358

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor

designed for high voltage switching applications.

FEATURES

• Low On-Resistance

2SK2357: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 3.0 A)
2SK2358: R

• Low Ciss Ciss = 1050 pF TYP.

• High Avalanche Capability Ratings

• Isolate TO-220 Package

DS(on) = 1.0 Ω (VGS = 10 V, ID = 3.0 A)

PACKAGE DIMENSIONS

(in millimeters)

10.0 ±0.3

15.0 ±0.3

3.2 ±0.2

3 ±0.1

12.0 ±0.213.5 MIN.

4.5 ±0.2

2.7 ±0.2

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage (2SK2357/2358) VDSS 450/500 V
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) ID(DC) ±6.0 A
Drain Current (pulse)* I
Total Power Dissipation (Tc = 25 ˚C) PT1 35 W
Total Power Dissipation (Ta = 25 ˚C) PT2 2.0 W
Channel Temperature T
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current** IAS 6.0 A
Single Avalanche Energy** E

* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting T

ch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0

D(pulse) ±24 A

ch 150 °C

AS 17 mJ

4 ±0.2

0.7 ±0.1

123

1.3 ±0.2

1.5 ±0.2

2.542.54

MP-45F (ISOLATED TO-220)

Drain

Gate

Source

2.5 ±0.1

0.65 ±0.1

1. Gate

2. Drain

3. Source

Body
Diode

The information in this document is subject to change without notice.

Document No. D11392EJ3V0DS00 (3rd edition)
(Previous No. TC-2498)
Date Published March 1998 N CP(K)
Printed in Japan

©

1994

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

2SK2357/2SK2358

CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS

Drain to Source On-Resistance RDS(on) 0.7 0.9 VGS = 10 V 2SK2357

UNIT

Ω

0.8 1.0 ID = 3.0 A 2SK2358
Gate to Source Cutoff Voltage VGS(off) 2.5 3.5 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 3.0 VDS = 10 V, ID = 3.0 A
Drain Leakage Current IDSS 100 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±100 VGS = ±30 V, VDS = 0
Input Capacitance Ciss 1050 VDS = 10 V
Output Capacitance Coss 200 VGS = 0
Reverse Transfer Capacitance Crss 26 f = 1 MHz
Turn-On Delay Time td(on) 14 ID = 3.0 A
Rise Time tr 9VGS(on) = 10 V
Turn-Off Delay Time td(off) 56 VDD = 150 V
Fall Time tf 14
Total Gate Charge QG 27 ID = 6.0 A
Gate to Source Charge QGS 5.5 VDD = 400 V
Gate to Drain Charge QGD 12 VGS = 10 V
Body Diode Forward Voltage VF(S-D) 1.0 IF = 6.0 A, VGS = 0
Reverse Recovery Time trr 300 IF = 6.0 A, VGS = 0
Reverse Recovery Charge Qrr 1.5

V
S

µ

A

nA
pF
pF
pF
ns
ns
ns

RG = 10 Ω RL = 50 Ω

ns
nC
nC
nC

V

ns

di/dt = 50 A/µs

nC

Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time

V

GS

= 20 - 0 V

PG

R

V

G

= 25 Ω

DD

50 Ω

I

D

D.U.T.

I

AS

BV

DSS

Starting T

L

V

DD

PG.

GS

V
0

V

DS

ch

t

t = 1 s

µ

Duty Cycle ≤ 1 %

D.U.T.

R

G

RG = 10 Ω

Test Circuit 3 Gate Charge

PG.

I

G

= 2 mA

50 Ω

D.U.T.

R

L

V

DD

R

L

V

DD

GS

V

Wave
Form

I

D

Wave
Form

V

I

0

D

GS

10 %

10 %

0

t

d (on)

90 %

t

on

90 %

V

GS (on)

90 %

I

D

10 %

t

d (off)

t

t

r

f

t

off

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

2

TYPICAL CHARACTERISTICS (TA = 25 °C)

2SK2357/2SK2358

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

020

40 60 100 120 140 160
T

c

- Case Temperature - °C

80

FORWARD BIAS SAFE OPERATING AREA

100

Limited

= 10 V)

DS (on)

GS

R

10

1.0

- Drain Current - A

D

I

0.1

(at V

I

D (DC)

Tc = 25 °C
Single Pulse

0.1

Power Dissipation Limited

100 ms

10 100 1000

DS

- Drain to Source Voltage - V

V

I

D (pulse)

10 ms

100 s

1 ms

PW = 10 s

µ

µ

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

50

40

30

20

10

- Total Power Dissipation - W

T

P

0

20 40 60 80 100 120 140 160

T

c

- Case Temperature - °C

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

10

VGS = 20 V

10 V

8

8 V
6 V

6

4

- Drain Current - A

D

I

2

0

4 8 12 16

DS

- Drain to Source Voltage - V

V

Pulsed

DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE

50

Pulsed

10

1

- Drain Current - A

D

I

0.1

0.05
0

V

Ta = –25 °C

25 °C
75 °C

125 °C

51015

GS

- Gate to Source Voltage - V

3

1000

2SK2357/2SK2358

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

100

10

1

0.1

0.01

rth(ch-c) (t) - Transient Thermal Resistance - °C/W

10 100 1 m 10 m 100 m 1 10 100 1000

µµ

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

100

Ta = –25 °C

25 °C

10

75 °C

125 °C

1.0

VDS = 10 V
Pulsed

PW - Pulse Width - s

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

1.5

1.0

0.5

th(ch-a) = 62.5 °C/W

R

Rth(ch-c) = 3.57 °C/W

C = 25 °C

T
Single Pulse

ID = 6 A

ID = 3 A

Pulsed

IyfsI - Forward Transfer Admittance - S

0.1
ID - Drain Current - A

DRAIN TO SOURCE ON-STATE
RESITANCE vs. DRAIN CURRENT

3.0

2.0

1.0

0

DS(on) - Drain to Source On-State Resistance - Ω

R

1.0 100
I

D - Drain Current - A

10

10

Pulsed

1001.0
RDS(on) - Drain to Source On-State Resistance - Ω

10 20

GS - Gate to Source Voltage - V

V

300

GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE

DS = 10 V

4.0

V
I

D = 1 mA

3.0

2.0

1.0

0

VGS(off) - Gate to Source Cutoff Voltage - V

–50 0 50 100 150

Tch - Channel Temperature - °C

4

2SK2357/2SK2358

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE

1.6

1.2

ID = 6 A

3 A

0.8

0.4

- Drain to Source On-State Resistance - Ω

0

DS(on)

R

–50 0 50 100 150

ch

- Channel Temperature - °C

T

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

5 000

C

1 000

iss

VGS = 10 V

VGS = 0
f = 1.0 MHz

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

50

10

1.0

- Diode Forward Current - A

SD

0.1

I

0.05

10 V

0.5

SD

- Source to Drain Voltage - V

V

SWITCHING CHARACTERISTICS

1000

100

Pulsed

V

GS

= 0

1.00

1.5

t

r

t

f

C

oss

100

- Capacitance - pF

rss

, C

oss

, C

iss

C

10

5

1 100 1000

V

DS

C

rss

10

- Drain to Source Voltage - V

REVERSE RECOVERY TIME vs.
DRAIN CURRENT

800

600

400

200

- Reverse Recovery Diode - ns

rr

t

0

1.0 10 100
ID - Drain Current - A

di/dt = 50 A/ s
V

GS

= 10 V

µ

- Switching Time - ns

f

, t

10

d(off)

, t

r

, t

d(on)

t

0.5

0.1 100

1.0 10

I

D

- Drain Current - A

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

400

V

GS

300

VDD = 400 V

250 V
125 V

200

100

- Drain to Source Voltage - V

DS

V

V

DS

010203040

Qg - Gate Charge - nC

t

d(on)

t

d(off)

DD

= 150 V

V
V

GS

= 10 V

RG = 25 Ω

ID = 6 A

16
14

12
10

8
6

4

- Gate to Source Voltage - V

GS

2

V

0

5

2SK2357/2SK2358

SINGLE AVALANCHE ENERGY vs
STARTING CHANNEL TEMPERATURE

20

15

EAS = 17 mJ

10

5

- Single Avalanche Enegy - mJ

AS

E

25

50 75 100 125

Starting T

ch

- Starting Channel Temperature - °C

I

D(peak)

= I
RG = 25 Ω
VGS = 20 V → 0 V
VDD = 150 V

AS

150 175

SINGLE AVALANCHE CURRENT vs
INDUCTIVE LOAD

100

RG = 25 Ω

DD

= 150 V

V
VGS = 20 V → 0
Starting Tch = 25°C

10

IAS = 6.0 A

E

AS

= 17 mJ

1.0

- Single Avalanche Current - A

AS

I

100 1.0 m 10 m 100 m

µ

L - Inductive Load - H

6

2SK2357/2SK2358

REFERENCE

Document Name Document No.
NEC semiconductor device reliability/quality control system. C11745E
Quality grades on NEC semiconductor devices. C11531E
Semiconductor device mounting technology manual. C10535E
IC package manual. C10943X
Guide to quality assurance for semiconductor devices. MEI-1202
Semiconductor selection guide. X10679E
Power MOS FET features and application switching to power supply. D12971E
Application circuits using Power MOS FET. D12972E
Safe operating area of Power MOS FET. D13085E

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.

7

2SK2357/2SK2358

[MEMO]

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.

M4 96.5