Datasheet 2SK2464 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6475

2SK2464

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· Enables simplified fabrication, high-density mound­ing, and miniaturization in end products due to the
surface mountable package.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaGoreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatSR

ecnaticapaCtupnI

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

SSD
SSG

D

PW≤10µs, duty cycle≤1%

PD

Tc=25˚C

D

I

SSD)RB(

V

SSD

V

SSG

V

)ffo(SG

)no(IDV,A22=

SD

1ssiCVSDzHM1=f,V0=05730034Fp
2ssiCV

Package Dimensions

unit:mm

2128

[2SK2464]

8.2

7.8

0.4

4.2

2.5

V,Am1=

D

SD
SG
SD

SD
SD
SD

0=03V

SG

V,V03=

0=001Aµ

SG

V,V02±=

0=001±An

SD

I,V01=

Am1=24V

D

A22=0203S

D

V01=5.821mΩ

SG

zHM1=f,V01=0072Fp
zHM1=f,V01=0032Fp
zHM1=f,V01=054Fp

6.2

0.2

3

8.4

1.2

2

1.0

2.54

6.2

1.0

2.54

1

5.08

10.0

6.0

10.0

5.2

nimpytxam

0.6

0.7

0.3

0.6

7.8

1 : Gate
2 : Source
3 : Drain
SANYO : ZP

03V
02±V
54A
081A
05W

sgnitaR

Continued on next page.

˚C
˚C

tinU

60100TS (KOTO) TA-2175 No.6475–1/3

2SK2464

Continued from preceding page.

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

I

V,A54=

DS

S

0=0.15.1V

SG

Switching Time Test Circuit

VDD=15V

V

10V

0V

PW=10µs
D.C.≤1%

P.G

in

V

in

G

50Ω

ID=22A

RL=0.68Ω

D

2SK2464

S

V

OUT

tiucriCtseTdeificepseeS54sn
tiucriCtseTdeificepseeS053sn
tiucriCtseTdeificepseeS001sn
tiucriCtseTdeificepseeS001sn

sgnitaR

nimpytxam

tinU

I

-- V

D

100

80

VGS=10V

DS

6.0V

6.5V

–A

60

D

5.5V

40

Drain Current, I

20

5.0V

4.5V

0

0246810

100

7
5

|–S

fs

3

2

10

7
5

3

Forward Transfer Admitance, | y

2

Drain-to-Source Voltage, VDS –V

yfs

-- I





D

°C

Tc=--25

25°C

75°C

1.0

23 5577

Drain Current, ID–A

22357

10

IT00772 IT00773

100

IT00774 IT00775

100

80

–A

D

60

40

D

GS

VDS=10V

I

-- V

°C

Drain Current, I

20

0

0246810

Tc=75

--25

25°C

°C

Gate-to-Source Voltage, VGS –V

30

RDS(on) -- V

GS

ID=22A
Tc=25°C

25

mΩ
–

20

(on)

DS

15

10

5

Static Drain-to-Source

On-State Resistance, R

0

4 6 81012141618

Gate-to-Source Voltage, VGS –V

No.6475–2/3

2SK2464

2

10000

7
5

3
2

1000

7
5

3
2

Ciss, Coss, Crss – pF

100

7
5

3

0 5 10 15 20 3025

5
3

2

100

7

–A

5

D

3
2

Operation in

10

this area is

7

limited by RDS(on)

5

Drain Current, I

3
2

1.0

Tc=25˚C

7

Single pulse

5

Ciss, Coss, Crss -- V

Drain-to-Source Voltage,VDS–V

A S O

IDP=180A

ID=45A

DC operation

7

1.0

Drain-to-Source Voltage,VDS–V

325 55

10ms

100ms

723

1ms

10

100

DS

f=1MHz

Ciss

Coss

Crss

IT00776 IT00777

10µs

µs

1000

100

Switching Time, SW Time – ns

60

50

–W

D

40

30

20

10

2

7
5

t

3

d

(off)

2

t

7
5

3
2

r

td(on)

0.1

SW Time -- I

t

f

23 5577

1.0

Drain Current, ID–A

P

D

D

23 571023 5

-- Tc

Allowable Power Dissipation, P

0

IT00778 IT00779

0 20 40 60 80 100 120 160140

Case Temperature, Tc – °C

VDD=15V
VGS=10V

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of June, 2000. Specifications and information herein are subject to
change without notice.

PS No.6475–3/3