Datasheet 2SK2413 Datasheet (NEC)

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK2413 is N-Channel MOS Field Effect Transistor de-

signed for high speed switching applications.

FEATURES

• Low On-Resistance

RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 5.0 A)

DS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)

R

• Low Ciss Ciss = 860 pF TYP.

• Built-in G-S Gate Protection Diodes

• High Avalanche Capability Ratings

2SK2413

PACKAGE DIMENSIONS

(in millimeter)

8.0 ±0.2

13.0 ±0.2
123

4.5 ±0.2

QUALITY GRADE

Standard

Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended

applications.

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage VDSS 60 V

Gate to Source Voltage VGSS ±20 V

Drain Current (DC) I

Drain Current (pulse)* ID(pulse) ±40 A

Total Power Dissipation (TA = 25 ˚C) PT 1.8 W

Channel Temperature T

Storage Temperature Tstg –55 to +150 ˚C

Single Avalanche Current** IAS 10 A
Single Avalanche Energy** E

* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0

D(DC) ±10 A

ch 150 ˚C

AS 10 mJ

2.5 ±0.2

1.4 ±0.2

MP-10 (ISOLATED TO-220)

Gate

Gate Protection
Diode

1.4 ±0.2

0.5 ±0.1 0.5 ±0.10.5 ±0.1

Drain

Source

1. Gate

2. Drain

3. Source

Body
Diode

Document No. TC-2494
(O. D. No. TC-8032)
Date Published November 1994 P
Printed in Japan

The information in this document is subject to change without notice.

©

1994

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

2SK2413

CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS

Drain to Source On-Resistance RDS(on)1 50 70 VGS = 10 V, ID = 5.0 A

Drain to Source On-Resistance RDS(on)2 70 95 VGS = 4 V, ID = 5.0 A

Gate to Source Cutoff Voltage VGS(off) 1.0 1.6 2.0 VDS = 10 V, ID = 1 mA

Forward Transfer Admittance | yfs | 7.0 12 VDS = 10 V, ID = 5.0 A
Drain Leakage Current IDSS ±10 VDS = 60 V, VGS = 0
Gate to Source Leakage Current IGSS ±10 VGS = ±20 V, VDS = 0

Input Capacitance Ciss 860 VDS = 10 V

Output Capacitance Coss 440 VGS = 0

Reverse Transfer Capacitance Crss 110 f = 1 MHz

Turn-On Delay Time td(on) 15 ID = 5.0 A

Rise Time tr 90 VGS(on) = 10 V

Turn-Off Delay Time td(off) 75 VDD = 30 V
Fall Time tf 30 RG = 10 Ω

Total Gate Charge QG 24 ID = 20 A

Gate to Source Charge QGS 3.0 VDD = 48 V

Gate to Drain Charge QGD 6.0 VGS = 10 V

Body Diode Forward Voltage VF(S-D) 1.0 IF = 10 A, VGS = 0

Reverse Recovery Time trr 95 IF = 10 A, VGS = 0

Reverse Recovery Charge Qrr 250 di/dt = 100 A/µs

UNIT

mΩ
mΩ

V

S

µ

A

µ

A

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

nC

Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time

R

R

G

= 10 Ω

D.U.T.

G

V

GS

= 20 → 0 V

PG

V

R

G

= 25 Ω

DD

50 Ω

I

D

D.U.T.

I

AS

BV

DSS

Starting T

L

PG.

V

DD

V

GS

V

DS

0

t

µ

t = 1 s

ch

Duty Cycle ≤ 1 %

Test Circuit 3 Gate Charge

PG.

G

= 2 mA

I

50 Ω

D.U.T.

L

R

V

DD

V

GS

V

Wave
Form

I

D

Wave
Form

D

I

GS

10 %

0

10 %

90 %

V

GS (on)

90 %

0

t

d (on)

t

r

t

on

90 %

I

D

10 %

t

d (off)

t

f

t

off

L

R

V

DD

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

2

Radial Tape Specification Dimension (unit: mm)

2SK2413

P

∆

A1

A

H1

H0

l1

F1 F2

P0

H

d

TPP2

h

∆

W0 W2

W1

0

D

t

W

h

∆

Component Body Length along Tape A1 8.0 ± 0.2
Component Body Height A 13.0 ± 0.2
Component Body Width T 4.5 ± 0.2
Component Lead Width Dimension d 0.5 ± 0.1

Lead Wire Enclosure I1 2.5 MIN.
Component Center Pitch P 12.7 ± 1.0
Feedhole Pitch P0 12.7 ± 0.3
Feedhole Center to Center Lead P2 6.35 ± 0.5

Component Lead Pitch F1, F2 2.5

Deflection Front or Rear

Deflection Left or Right

Carrier Strip Width W 18.0

Adhesive Tape Width W0 5.0 MIN.
Feedhole Location W1 9.0 ± 0.5

Adhesive Tape Position W2 0.7 MIN.
Height of Seating Plane H0 16.0 ± 0.5

Feedhole to upper of Component H1 32.2 MAX.

Feedhole to Bottom of Component H 20.0 MAX.
Tape Feedhole Diameter D0 4.0 ± 0.2
Overall Taped Package Thickness t 0.7 ± 0.2

Item

∆

h ±1.0

∆

P ±1.3

+0.4

–0.1

+1.0

–0.5

3

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

g

2SK2413

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

40 60 80 100 120 140 160

20

FORWARD BIAS SAFE OPERATING AREA

100

ID(pulse)

Limited

10

DS (on)

R

(at V

= 10 V)

GS

ID (DC)

Power Dissipation Limited

ID - Drain Current - A

TA = 25 ˚C
Single Pulse

1

0.1

1 10 100

V

DS - Drain to Source Voltage - V

1 ms

10 ms

200 ms

PW = 10 s

µ

100 s

µ

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

2.0

1.6

1.2

0.8

0.4

PT - Total Power Dissipation - W

0

20 40 60 80 100 120 140 160

a - Ambient Temperature - ˚CTa - Ambient Temperature - ˚C

T

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

50

VGS = 10 V

40

V

GS = 6 V

30

20

ID - Drain Current - A

10

0

2

DS - Drain to Source Voltage - V

V

46810

GS = 4 V

V

Pulsed

FORWARD TRANSFER CHARACTERISTICS

1000

100

10

D - Drain Current - A

I

1

0

4

Pulsed

VDS = 10 V

TA = –25 ˚C

25 ˚C
75 ˚C

125 ˚C

123 567

V

GS - Gate to Source Volta

48

e - V

1000

p

2SK2413

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

100

10

1

0.1

rth (t) - Transient Thermal Resistance - ˚C/W

0.01

µµ

10 100 1 m 10 m 100 m 1 10 100 1000

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

100

TA = –25 ˚C

25 ˚C
75 ˚C

125 ˚C

10

VDS = 10 V
Pulsed

PW - Pulse Width - s

120

100

80

60

Rth (ch-a) = 69.4 ˚C/W

Single Pulse

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

Pulsed

ID = 5 A

fs| - Forward Transfer Admittance - S

|y

1

1 10 100

I

D - Drain Current - A

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

160

140

120

100

80

VGS = 4 V

60

40

VGS = 10 V

20

0

RDS (on) - Drain to Source On-State Resistance - mΩ

1

ID - Drain Current - A

Pulsed

10 100

40

20

0

01020

DS (on) - Drain to Source On-State Resistance - mΩ

R

V

GS - Gate to Source Voltage - V

GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE

2.0
VDS = 10 V

ID = 1 mA

1.5

1.0

0.5

GS (off) - Gate to Source Cutoff Voltage - V

V

0

–50

0 50 100 150

T

ch - Channel Tem

erature - ˚C

5

2SK2413

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE

120

VGS = 4 V

80

V

GS = 10 V

40

0

–50

0 50 150100

RDS (on) - Drain to Source On-State Resistance - mΩ

ch - Channel Temperature - ˚C

T

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

10000

1000

Ciss

Coss

100

Crss

ID = 5 A

VGS = 0
f = 1 MHz

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

100

10 V

10

1

ISD - Diode Forward Current - A

0.1
0

SD - Source to Drain Voltage - V

V

SWITCHING CHARACTERISTICS

1000

100

td (off)

tf

10

Pulsed

VGS = 0

2.01.0

tr

td (on)

Ciss, Coss, Crss - Capacitance - pF

10

1

V

DS - Drain to Source Voltage - V

10 100

REVERSE RECOVERY TIME vs.
DRAIN CURRENT

100

trr - Reverse Recovery time - ns

10

di/dt = 50 A/ s
VGS = 0

0.1 1.0 10 100

I

D - Drain Current - A

VDD = 30 V
VGS = 10 V

td (on), tr, td (off), tf - Switching Time - ns

1.0

RG = 10 Ω

0.1 1.0 10 100

D - Drain Current - A

I

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

80

70

ID = 10 A
VDD = 48 V

60

50

VDS

VGS

40

30

20

DS - Drain to Source Voltage - V

10

µ

V

0

16

14

12

10

8

6

4

2

VGS - Gate to Source Voltage - V

0

010203040

g - Gate Charge - nC

Q

6

2SK2413

g

SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD

100

IAS = 10 A

10

E

AS

= 10 mJ

1.0

VDD = 30 V
VGS = 20 V → 0

IAS - Single Avalanche Energy - mJ

RG = 25 Ω

µµ

10 100 1 m 10 m

L - Inductive Load - H

100

80

60

40

20

dt - Energy Derating Factor - %

0

25 50 75 100 125 150

SINGLE AVALANCHE ENERGY
DERATING FACTOR

Tch - Starting Channel Temperature - ˚C

Startin

VDD = 30 V
RG = 25 Ω
VGS = 20 V → 0
IAS ≤ 10 A

REFERENCE

Document Name Document No.

NEC semiconductor device reliability/quality control system. TEI-1202

Quality grade on NEC semiconductor devices. IEI-1209

Semiconductor device mounting technology manual. IEI-1207

Semiconductor device package manual. IEI-1213

Guide to quality assurance for semiconductor devices. MEI-1202

Semiconductor selection guide. MF-1134

Power MOS FET features and application switching power supply. TEA-1034

Application circuits using Power MOS FET. TEA-1035

Safe operating area of Power MOS FET. TEA-1037

The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device is actually used, an additional protection circuit is externally required if a voltage exceeding the

rated voltage may be applied to this device.

7

[MEMO]

2SK2413

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear
reactor control systems and life support systems. If customers intend to use NEC devices for above applications
or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact
our sales people in advance.
Application examples recommended by NEC Corporation

Standard:Computer, Office equipment, Communication equipment, Test and Measurement equipment,

Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc.

Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime

systems, etc.

M4 92.6