fax id: 1030
CY7C199
Features
•High speed
—10 ns
•Fast tDOE
•CMOS for optimum speed/power
•Low active power
—467 mW (max, 12 ns “L” version)
•Low standby power
—0.275 mW (max, “L” version)
•2V data retention (“L” version only)
•Easy memory expansion with CE and OE features
•TTL-compatible inputs and outputs
•Automatic power-down when deselected
Functional Description
The CY7C199 is a high-performance CMOS static RAM organized as 32,768 words by 8 bits. Easy memory expansion is
32K x 8 Static RAM
provided by an active LOW chip enable (CE) and active LOW
output enable (OE) and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 81% when deselected. The CY7C199 is in the standard 300-mil-wide DIP, SOJ, and LCC packages.
An active LOW write enable signal (WE) controls the writing/reading operation of the memory. When CE and WE inputs are both LOW, data on the eight data input/output pins (I/O0 through I/O7) is written into the memory location addressed by the address present on the address pins (A0 through A14). Reading the device is accomplished by selecting the device and enabling the outputs, CE and OE active LOW, while WE remains inactive or HIGH. Under these conditions, the contents of the location addressed by the information on address pins are present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless the chip is selected, outputs are enabled, and write enable (WE) is HIGH. A die coat is used to improve alpha immunity.
Logic Block Diagram |
|
|
|
|
|
|
|
Pin Configurations |
|
|
|
|
|
||||||
|
|
|
|
|
|
|
|
|
|
DIP / SOJ / SOIC |
|
LCC |
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
Top View |
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
Top View |
|
|
|||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
A5 |
1 |
28 |
VCC |
|
7 6 5 |
CC |
WE |
|
|
|
|
|
|
|
|
|
|
|
|
A6 |
2 |
27 |
WE |
|
A A A |
V |
|
|
||
|
|
|
|
|
|
|
|
|
|
3 2 1 28 27 |
|
|
|||||||
|
|
|
|
|
|
|
|
|
A7 |
3 |
26 |
A4 |
A8 |
A4 |
|
||||
|
|
|
|
|
|
|
|
|
A8 |
4 |
25 |
A3 |
4 |
|
|
26 |
|
||
|
|
|
|
|
|
|
|
|
A9 |
5 |
|
|
25 |
A3 |
|
||||
|
|
|
|
|
|
|
|
|
A9 |
5 |
24 |
A2 |
|
|
|
||||
|
|
|
|
|
|
|
|
|
A10 |
6 |
|
|
24 A2 |
|
|||||
|
|
|
|
|
|
|
|
|
A10 |
6 |
23 |
A1 |
A11 |
7 |
|
|
23 |
A1 |
|
|
|
|
|
|
|
|
I/O0 |
A11 |
7 |
22 |
OE |
A12 |
8 |
|
|
22 |
OE |
|
|
|
|
|
|
|
|
|
A12 |
8 |
21 |
A0 |
A13 |
9 |
|
|
21 |
A0 |
|
||
|
|
INPUT BUFFER |
|
|
|
|
A13 |
9 |
20 |
CE |
A14 |
10 |
|
|
20 |
CE |
|
||
|
|
|
|
|
|
I/O0 |
11 |
|
|
19 |
|
||||||||
|
|
|
|
|
|
|
I/O1 |
A14 |
10 |
19 |
I/O7 |
|
|
I/O7 |
|
||||
A0 |
|
|
|
|
|
|
I/O1 |
12 |
|
|
18 |
I/O6 |
|
||||||
|
|
|
|
|
|
|
|
I/O0 |
11 |
18 |
I/O6 |
|
1314151617 |
|
|
||||
A1 |
ROW DECODER |
|
|
|
|
|
I/O2 |
I/O1 |
12 |
17 |
I/O5 |
|
2 |
3 4 |
5 |
C199–3 |
|||
A |
|
|
|
|
|
|
|
16 |
|
|
|
|
|||||||
|
|
|
|
|
I/O2 |
13 |
I/O4 |
|
I/O GND |
|
|
|
|
|
|||||
2 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||
A3 |
|
|
|
|
|
|
|
GND |
14 |
15 |
I/O3 |
|
|
|
|
|
|
||
A4 |
|
|
|
|
|
I/O3 |
|
|
|
|
C199–2 |
|
|
|
|
|
|||
A |
1024 x 32 x 8 |
|
|
|
|
|
|
|
|
|
|
|
|
||||||
A65 |
ARRAY |
|
|
|
|
|
OE |
22 |
|
|
|
|
|
21 |
A 0 |
|
|||
A7 |
|
|
|
|
AMPSSENSE |
I/O4 |
A 1 |
23 |
|
|
|
I/O |
I/O |
I/O 20 |
CE |
|
|||
|
|
|
|
A 2 |
24 |
|
|
|
|
||||||||||
A |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
19 |
I/O 7 |
|||
8 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
A |
|
|
|
|
|
|
|
|
A 3 |
25 |
|
|
|
|
|
|
18 |
I/O |
6 |
9 |
|
|
|
|
|
|
I/O5 |
A 4 |
26 |
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
TSOP I |
|
|
|
17 |
I/O 5 |
|||||
|
|
|
|
|
|
|
|
|
WE |
27 |
|
|
|
|
|
||||
CE |
|
|
|
|
|
|
|
|
|
|
|
|
|
16 |
I/O 4 |
||||
|
|
|
|
|
|
I/O6 |
VCC |
28 |
|
|
Top View |
|
|
|
15 |
I/O 3 |
|||
WE |
|
|
|
|
|
POWER |
|
|
|
|
|
||||||||
|
COLUMN |
|
|
|
A 5 |
1 |
|
|
(not to scale) |
|
|
14 |
GND |
||||||
|
|
|
DOWN |
|
|
|
|
|
|
||||||||||
|
|
DECODER |
|
|
|
A 6 |
2 |
|
|
|
|
|
|
13 |
I/O 2 |
||||
|
|
|
|
I/O |
|
|
|
|
|
|
|
||||||||
OE |
|
|
|
|
|
|
7 |
A 7 |
3 |
|
|
|
|
|
|
12 |
I/O 1 |
||
|
|
|
|
|
|
|
A 8 |
4 |
|
|
|
|
|
|
|||||
|
|
|
|
|
|
|
C199–1 |
|
|
|
|
|
|
|
11 |
I/O 0 |
|||
|
10 |
11 |
12 |
13 |
14 |
|
|
A 9 |
5 |
|
|
|
|
|
|
10 |
A 14 |
||
|
|
|
|
|
|
|
|
|
|
||||||||||
|
A |
A |
A |
A |
A |
|
|
|
A 10 |
6 |
|
|
|
|
|
|
9 |
A 13 |
|
|
|
|
|
|
|
|
|
|
A 11 |
7 |
|
|
|
|
|
|
8 |
A 12 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
C199–4 |
Selection Guide
|
|
7C199-8 |
7C199-10 |
7C199-12 |
7C199-15 |
7C199-20 |
7C199-25 |
7C199-35 |
7C199-45 |
Maximum Access Time (ns) |
8 |
10 |
12 |
15 |
20 |
25 |
35 |
45 |
|
Maximum Operating |
|
120 |
110 |
160 |
155 |
150 |
150 |
140 |
140 |
Current (mA) |
L |
|
90 |
90 |
90 |
90 |
80 |
70 |
|
|
|
|
|||||||
Maximum CMOS |
|
0.5 |
0.5 |
10 |
10 |
10 |
10 |
10 |
10 |
Standby Current (mA) |
L |
|
0.05 |
0.05 |
0.05 |
0.05 |
0.05 |
0.05 |
|
|
|
|
|||||||
|
|
|
|
|
|
|
|
|
|
Shaded area contains preliminary information.
Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600 February 1988 – Revised April 22, 1998
CY7C199
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ................................. |
–65°C to +150°C |
Ambient Temperature with |
–55°C to +125°C |
Power Applied ............................................. |
|
Supply Voltage to Ground Potential |
|
(Pin 28 to Pin 14) ........................................... |
–0.5V to +7.0V |
DC Voltage Applied to Outputs |
|
in High Z State[1] .................................... |
–0.5V to VCC + 0.5V |
DC Input Voltage[1]................................. |
–0.5V to VCC + 0.5V |
Electrical Characteristics Over the Operating Range[3]
Output Current into Outputs (LOW) |
............................. 20 mA |
Static Discharge Voltage .......................................... |
>2001V |
(per MIL-STD-883, Method 3015) |
|
Latch-Up Current.................................................... |
>200 mA |
Operating Range
Range |
Ambient Temperature[2] |
VCC |
Commercial |
0°C to +70°C |
5V ± 10% |
|
|
|
Industrial |
–40°C to +85°C |
5V ± 10% |
|
|
|
Military |
–55°C to +125°C |
5V ± 10% |
|
|
|
|
|
|
|
|
|
|
|
7C199-8 |
7C199-10 |
7C199-12 |
7C199-15 |
|
||||
Parameter |
Description |
|
|
Test Conditions |
Min. |
Max. |
Min. |
Max. |
Min. |
Max. |
Min. |
Max. |
Unit |
|||
VOH |
Output HIGH |
|
VCC=Min., IOH=–4.0 mA |
2.4 |
|
2.4 |
|
2.4 |
|
2.4 |
|
V |
||||
|
Voltage |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
VOL |
Output LOW |
|
VCC=Min., IOL=8.0 mA |
|
0.4 |
|
0.4 |
|
0.4 |
|
0.4 |
V |
||||
|
Voltage |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
VIH |
Input HIGH |
|
|
|
|
|
|
2.2 |
VCC |
2.2 |
VCC |
2.2 |
VCC |
2.2 |
VCC |
V |
|
Voltage |
|
|
|
|
|
|
|
+0.3V |
|
+0.3V |
|
+0.3V |
|
+0.3V |
|
VIL |
Input LOW |
|
|
|
|
|
|
–0.5 |
0.8 |
–0.5 |
0.8 |
–0.5 |
0.8 |
–0.5 |
0.8 |
V |
|
Voltage |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
IIX |
Input Load |
|
GND < VI < VCC |
|
–5 |
+5 |
–5 |
+5 |
–5 |
+5 |
–5 |
+5 |
μA |
|||
|
Current |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
IOZ |
Output Leakage |
|
GND < VO < VCC, |
|
–5 |
+5 |
–5 |
+5 |
–5 |
+5 |
–5 |
+5 |
μA |
|||
|
Current |
|
Output Disabled |
|
|
|
|
|
|
|
|
|
|
|||
ICC |
VCC Operating |
|
VCC = Max., |
Com’l |
|
120 |
|
110 |
|
160 |
|
155 |
mA |
|||
|
Supply Current |
|
IOUT = 0 mA, |
L |
|
|
|
85 |
|
85 |
|
100 |
mA |
|||
|
|
|
f = fMAX = 1/tRC |
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
Mil |
|
|
|
|
|
|
|
180 |
mA |
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
ISB1 |
Automatic CE |
|
Max. VCC, |
|
> |
Com’l |
|
5 |
|
5 |
|
30 |
|
30 |
mA |
|
CE |
|
|
|
|
||||||||||||
|
Power-Down |
|
VIH, |
L |
|
|
|
5 |
|
5 |
|
5 |
mA |
|||
|
Current— TTL |
|
VIN > VIH or |
|
|
|
|
|
|
|
|
|
|
|||
|
Inputs |
|
VIN < VIL, f = fMAX |
|
|
|
|
|
|
|
|
|
|
|||
ISB2 |
Automatic CE |
|
Max. VCC, |
Com’l |
|
0.5 |
|
0.5 |
|
10 |
|
10 |
mA |
|||
|
Power-Down |
|
CE |
> VCC – 0.3V |
L |
|
0.05 |
|
0.05 |
|
0.05 |
|
0.05 |
mA |
||
|
Current— CMOS |
|
VIN > VCC – 0.3V |
|
|
|
|
|
|
|
|
|
|
|||
|
Mil |
|
|
|
|
|
|
|
15 |
mA |
||||||
|
Inputs |
|
or VIN < 0.3V, f = 0 |
|
|
|
|
|
|
|
Shaded area contains preliminary information.
Notes:
1.VIL (min.) = –2.0V for pulse durations of less than 20 ns.
2.TA is the “instant on” case temperature.
3.See the last page of this specification for Group A subgroup testing information.
2
CY7C199
Electrical Characteristics Over the Operating Range[3] (continued)
|
|
|
|
|
|
|
|
|
7C199-20 |
7C199-25 |
7C199-35 |
7C199-45 |
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
Parameter |
Description |
|
|
|
Test Conditions |
Min. |
Max. |
Min. |
Max. |
Min. |
Max. |
Min. |
Max. |
Unit |
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||
VOH |
Output HIGH |
|
VCC=Min., IOH=–4.0 mA |
2.4 |
|
2.4 |
|
2.4 |
|
2.4 |
|
V |
|||||
|
Voltage |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||
VOL |
Output LOW |
|
VCC=Min., IOL=8.0 mA |
|
0.4 |
|
0.4 |
|
0.4 |
|
0.4 |
V |
|||||
|
Voltage |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
VIH |
Input HIGH |
|
|
|
|
|
|
|
2.2 |
VCC |
2.2 |
VCC |
2.2 |
VCC |
2.2 |
VCC |
V |
|
Voltage |
|
|
|
|
|
|
|
|
+0.3V |
|
+0.3V |
|
+0.3V |
|
+0.3V |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
VIL |
Input LOW |
|
|
|
|
|
|
|
–0.5 |
0.8 |
-0.5 |
0.8 |
-0.5 |
0.8 |
-0.5 |
0.8 |
V |
|
Voltage |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
IIX |
Input Load |
|
GND < VI < VCC |
|
–5 |
+5 |
–5 |
+5 |
–5 |
+5 |
–5 |
+5 |
μA |
||||
|
Current |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
IOZ |
Output Leakage |
|
GND < VI < VCC, |
|
–5 |
+5 |
–5 |
+5 |
–5 |
+5 |
–5 |
+5 |
μA |
||||
|
Current |
|
Output Disabled |
|
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
ICC |
VCC Operating |
|
VCC = Max., |
Com’l |
|
150 |
|
150 |
|
140 |
|
140 |
mA |
||||
|
Supply Current |
|
IOUT = 0 mA, |
|
|
|
|
|
|
|
|
|
|
||||
|
|
L |
|
90 |
|
80 |
|
70 |
|
70 |
mA |
||||||
|
|
|
f = fMAX = 1/tRC |
|
|
|
|
|
|
|
|
|
|
||||
|
|
|
Mil |
|
170 |
|
150 |
|
150 |
|
150 |
mA |
|||||
|
|
|
|
|
|
|
|
|
|
|
|
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
ISB1 |
Automatic CE |
|
Max. VCC, |
|
> VIH, |
Com’l |
|
30 |
|
30 |
|
25 |
|
25 |
mA |
||
CE |
|
|
|
|
|||||||||||||
|
Power-Down |
|
VIN > VIH |
|
|
|
|
|
|
|
|
|
|
||||
|
|
L |
|
5 |
|
5 |
|
5 |
|
5 |
mA |
||||||
|
Current— |
|
or VIN < VIL, f = fMAX |
|
|
|
|
|
|
|
|
|
|
||||
|
TTL Inputs |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
ISB2 |
Automatic CE |
|
Max. VCC, |
Com’l |
|
10 |
|
10 |
|
10 |
|
10 |
mA |
||||
|
Power-Down |
|
CE |
> VCC – 0.3V |
|
|
|
|
|
|
|
|
|
|
|||
|
|
L |
|
0.05 |
|
0.05 |
|
0.05 |
|
0.05 |
μA |
||||||
|
Current— |
|
V |
> V – 0.3V or |
|
|
|
|
|||||||||
|
CMOS Inputs |
|
IN |
CC |
|
|
|
|
|
|
|
|
|
|
|||
|
|
VIN < 0.3V, f=0 |
Mil |
|
15 |
|
15 |
|
15 |
|
15 |
mA |
|||||
] |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Capacitance[4] |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Parameter |
Description |
Test Conditions |
Max. |
Unit |
|
|
|
|
|
CIN |
Input Capacitance |
TA = 25°C, f = 1 MHz, |
8 |
pF |
|
|
VCC = 5.0V |
|
|
COUT |
Output Capacitance |
8 |
pF |
3
|
|
|
|
|
|
CY7C199 |
AC Test Loads and Waveforms[5] |
|
|
|
|
||
5V |
R1 481Ω |
5V |
R1 481Ω |
|
|
|
|
|
|
ALL INPUT PULSES |
|||
OUTPUT |
|
OUTPUT |
|
|
||
|
|
3.0V |
90% |
90% |
||
|
|
|
|
|
||
|
|
|
|
10% |
10% |
|
30 pF |
R2 |
5 pF |
R2 |
|
||
GND |
|
|
||||
|
255 Ω |
|
255Ω |
≤tr |
|
≤tr |
INCLUDING |
|
INCLUDING |
|
|
||
JIGAND |
|
JIGAND |
|
|
|
|
SCOPE |
|
SCOPE |
C199–5 |
|
|
C199–6 |
|
|
|
(a) |
(b) |
|
|
|
|
|
|
|||||
Equivalent to: |
THÉVENIN EQUIVALENT |
|
|
|
|
|
|
|
|
||||||
|
|
|
167 Ω |
|
|
|
|
|
|
|
|
||||
OUTPUT |
|
|
|
|
1.73V |
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|||||
Data Retention Characteristics Over the Operating Range (L version only) |
|
|
|
||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Parameter |
|
|
|
|
Description |
|
|
|
|
Conditions[6] |
Min. |
Max. |
Unit |
||
VDR |
|
VCC for Data Retention |
|
|
|
|
|
2.0 |
|
V |
|||||
ICCDR |
|
Data Retention Current |
|
Com’l |
|
VCC = VDR = 2.0V, |
|
|
μA |
||||||
|
|
|
|
|
|
|
|
|
|
CE |
> VCC – 0.3V, |
|
|
|
|
|
|
|
|
|
|
|
|
Com’l L |
|
|
10 |
μA |
|||
|
|
|
|
|
|
|
|
|
VIN > VCC – 0.3V or |
|
|||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
V |
< 0.3V |
|
|
|
|
[4] |
|
Chip Deselect to Data Retention Time |
|
0 |
|
ns |
|||||||||
tCDR |
|
|
IN |
|
|
||||||||||
t [5] |
|
Operation Recovery Time |
|
|
|
|
|
t |
|
ns |
|||||
R |
|
|
|
|
|
|
|
|
|
|
|
|
RC |
|
|
Data Retention Waveform
|
|
DATA RETENTION MODE |
|
VCC |
3.0V |
VDR > 2V |
3.0V |
|
tCDR |
|
tR |
CE |
|
|
|
|
|
|
C199–7 |
Notes:
4.Tested initially and after any design or process changes that may affect these parameters.
5.tR < 3 ns for the -12 and -15 speeds. tR < 5 ns for the -20 and slower speeds.
6.No input may exceed VCC + 0.5V.
4