Cypress Semiconductor CY7C1041BL-17ZC, CY7C1041BL-17VC, CY7C1041BL-15ZC, CY7C1041BL-15VC, CY7C1041B-25ZI Datasheet

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Cypress Semiconductor CY7C1041BL-17ZC, CY7C1041BL-17VC, CY7C1041BL-15ZC, CY7C1041BL-15VC, CY7C1041B-25ZI Datasheet

CY7C1041B

Features

High speed

tAA = 12 ns

Low active power

1540 mW (max.)

Low CMOS standby power (L version)

2.75 mW (max.)

2.0V Data Retention (400 W at 2.0V retention)

Automatic power-down when deselected

TTL-compatible inputs and outputs

Easy memory expansion with CE and OE features

Functional Description

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits.

Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is

256K x 16 Static RAM

written into the location specified on the address pins (A0 through A17). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A17).

Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O8 to I/O15. See the truth table at the back of this data sheet for a complete description of read and write modes.

The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).

The CY7C1041B is available in a standard 44-pin 400-mil-wide body width SOJ and 44-pin TSOP II package with center power and ground (revolutionary) pinout.

Logic Block Diagram

Pin Configuration

A0 A1 A2

A3 A4

A5 A6

A7 A8

ROW DECODER

INPUT BUFFER

 

 

256K x 16

 

 

AMPS

I/O0

– I/O7

 

 

 

 

 

 

 

 

ARRAY

 

 

SENSE

 

 

 

 

1024 x 4096

 

I/O8

– I/O15

 

 

 

 

 

 

 

 

 

 

 

 

 

 

COLUMN

 

 

 

 

 

 

 

DECODER

 

 

 

 

 

9

10

11

12 13

14

15

16

17

 

 

A A A A A A A A A

 

BHE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

WE

 

 

 

 

 

 

 

 

 

CE

 

 

 

 

 

 

 

 

 

OE

 

 

 

 

 

 

 

 

 

BLE

 

 

 

 

 

 

 

 

 

1041B–1

SOJ

TSOP II

Top View

 

A0

 

1

44

 

 

A17

 

 

 

 

 

 

 

 

A1

 

2

43

 

 

A16

 

 

 

A2

 

3

42

 

 

A15

 

 

 

 

A3

 

4

41

 

 

OE

 

 

 

 

 

A4

 

5

40

 

 

BHE

 

 

39

 

 

 

CE

 

 

6

 

 

BLE

 

 

 

I/O0

 

7

38

 

 

I/O15

 

 

 

 

 

 

 

I/O1

 

8

37

 

 

I/O14

 

 

 

I/O2

 

9

36

 

 

I/O13

 

 

 

 

 

 

 

 

 

 

I/O3

 

10

35

 

 

I/O12

 

 

 

 

 

 

 

VCC

 

11

34

 

 

VSS

 

 

 

VSS

 

12

33

 

 

VCC

 

 

 

I/O4

 

13

32

 

 

I/O11

 

 

I/O5

 

14

31

 

 

I/O10

 

 

I/O6

 

15

30

 

 

I/O9

 

 

I/O7

 

16

29

 

 

I/O8

 

 

WE

 

17

28

 

NC

 

A5

 

18

27

 

 

A14

 

 

 

 

 

A6

 

19

26

 

 

A13

 

 

 

 

 

A7

 

20

25

 

 

A12

 

 

 

A8

 

21

24

 

 

A11

 

 

 

 

 

A9

 

22

23

 

 

A10

 

 

1041B–2

Selection Guide

 

 

 

 

7C1041B-12

7C1041B-15

7C1041B-17

 

7C1041B-20

7C1041B-25

 

 

 

 

 

 

 

 

 

 

 

Maximum Access Time (ns)

 

 

 

12

15

 

17

 

20

25

 

 

 

 

 

 

 

 

 

 

 

Maximum Operating Current (mA)

Com’l

 

 

200

190

 

180

 

170

160

 

 

 

 

 

 

 

 

 

 

 

 

Ind’l

 

 

220

210

 

200

 

190

180

 

 

 

 

 

 

 

 

 

 

 

Maximum CMOS Standby Current

Com’l

 

 

3

3

 

3

 

3

3

(mA)

 

 

 

 

 

 

 

 

 

 

Com’l

L

 

-

0.5

 

0.5

 

0.5

0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Ind’l

 

 

-

6

 

6

 

6

6

 

 

 

 

 

 

 

 

 

 

 

Cypress Semiconductor Corporation

 

3901 North First Street •

San Jose •

CA 95134 •

408-943-2600

 

 

 

 

 

 

 

 

 

 

March 23, 2001

CY7C1041B

Maximum Ratings

(Above which the useful life may be impaired. For user guidelines, not tested.)

Storage Temperature –65° C to +150° C

Ambient Temperature with Power Applied–55° C to +125° C

Supply Voltage on VCC to Relative GND[1]–0.5V to +7.0V

DC Voltage Applied to Outputs

in High Z State[1]–0.5V to VCC + 0.5V

Electrical Characteristics Over the Operating Range

DC Input Voltage[1]–0.5V to VCC + 0.5V

Current into Outputs (LOW)20 mA

Operating Range

 

Ambient

 

Range

Temperature[2]

VCC

Commercial

0° C to +70° C

5V ± 0.5

 

 

 

Industrial

–40° C to +85° C

 

 

 

 

 

 

 

 

 

 

 

 

7C1041B-12

7C1041B-15

7C1041B-17

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Description

Test Conditions

 

 

Min.

Max.

Min.

Max.

Min.

Max.

Unit

 

 

 

 

 

 

 

 

 

 

 

 

VOH

Output HIGH Voltage

VCC = Min., IOH = –4.0 mA

 

 

2.4

 

2.4

 

2.4

 

V

VOL

Output LOW Voltage

VCC = Min., IOL = 8.0 mA

 

 

 

0.4

 

0.4

 

0.4

V

VIH

Input HIGH Voltage

 

 

 

 

 

 

2.2

VCC

2.2

VCC

2.2

VCC

V

 

 

 

 

 

 

 

 

 

+ 0.5

 

+ 0.5

 

+ 0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIL

Input LOW Voltage[1]

 

 

 

 

 

 

–0.5

0.8

–0.5

0.8

–0.5

0.8

V

IIX

Input Load Current

GND < VI < VCC

 

 

 

–1

+1

–1

+1

–1

+1

A

IOZ

Output Leakage

GND < VOUT < VCC,

 

 

 

–1

+1

–1

+1

–1

+1

A

 

Current

Output Disabled

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC

VCC Operating

VCC = Max.,

Com’l

 

 

 

200

 

190

 

180

mA

 

Supply Current

f = fMAX = 1/tRC

 

 

 

 

 

 

 

 

 

 

 

Ind’l

 

 

 

220

 

210

 

200

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB1

Automatic CE

Max. VCC,

 

> VIH

 

 

 

 

40

 

40

 

40

mA

CE

 

 

 

 

 

 

 

Power-Down Current

VIN > VIH or

 

 

 

 

 

 

 

 

 

 

 

—TTL Inputs

VIN < VIL, f = fMAX

 

 

 

 

 

 

 

 

 

 

ISB2

Automatic CE

Max. VCC,

Com’l

 

 

 

3

 

3

 

3

mA

 

Power-Down Current

CE > VCC – 0.3V,

 

 

 

 

 

 

 

 

 

 

 

Com’l

L

 

-

 

0.5

 

0.5

mA

 

—CMOS Inputs

VIN > VCC – 0.3V,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

or VIN < 0.3V, f = 0

Ind’l

 

 

 

-

 

6

 

6

mA

Notes:

1.VIL (min.) = –2.0V for pulse durations of less than 20 ns.

2.TA is the case temperature.

2

CY7C1041B

Electrical Characteristics Over the Operating Range (continued)

 

 

Test Conditions

 

 

7C1041B-20

7C1041B-25

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Description

 

 

 

 

 

 

Min.

Max.

Min.

Max.

Unit

 

 

 

 

 

 

 

 

 

 

VOH

Output HIGH Voltage

VCC = Min., IOH = –4.0 mA

 

 

2.4

 

2.4

 

V

VOL

Output LOW Voltage

VCC = Min., IOL = 8.0 mA

 

 

 

0.4

 

0.4

V

VIH

Input HIGH Voltage

 

 

 

 

 

 

2.2

VCC

2.2

VCC + 0.5

V

 

 

 

 

 

 

 

 

 

+ 0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIL

Input LOW Voltage[1]

 

 

 

 

 

 

–0.5

0.8

–0.5

0.8

V

IIX

Input Load Current

GND < VI < VCC

 

 

 

–1

+1

–1

+1

A

IOZ

Output Leakage

GND < VOUT < VCC,

 

 

 

–1

+1

–1

+1

A

 

Current

Output Disabled

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC

VCC Operating

VCC = Max.,

Com’l

 

 

 

170

 

160

mA

 

Supply Current

f = fMAX = 1/tRC

 

 

 

 

 

 

 

 

 

Ind’l

 

 

 

190

 

180

mA

ISB1

Automatic CE

Max. VCC,

 

> VIH

 

 

 

 

40

 

40

mA

CE

 

 

 

 

 

 

Power-Down Current

VIN > VIH or

 

 

 

 

 

 

 

 

 

—TTL Inputs

VIN < VIL, f = fMAX

 

 

 

 

 

 

 

 

ISB2

Automatic CE

Max. VCC,

Com’l

 

 

 

3

 

3

mA

 

Power-Down Current

CE > VCC – 0.3V,

 

 

 

 

 

 

 

 

 

Com’l

L

 

0.5

 

0.5

mA

 

—CMOS Inputs

VIN > VCC – 0.3V,

 

 

 

 

 

 

 

 

 

Ind’l

 

 

 

6

 

6

mA

 

 

or VIN < 0.3V, f = 0

 

 

 

 

Capacitance[3]

Parameter

Description

Test Conditions

Max.

Unit

 

 

 

 

 

CIN

Input Capacitance

TA = 25° C, f = 1 MHz,

8

pF

 

 

VCC = 5.0V

 

 

COUT

I/O Capacitance

8

pF

 

AC Test Loads and Waveforms

 

 

R1 481Ω

R1 481Ω

ALL INPUT PULSES

 

5V

5V

3.0V

 

OUTPUT

OUTPUT

90%

90%

10%

10%

 

 

30 pF

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R2

5 pF

 

 

 

 

 

 

 

 

 

 

 

 

 

R2

GND

 

 

 

 

 

 

 

 

 

 

INCLUDING

 

 

 

 

 

 

 

 

 

 

 

 

 

 

255Ω

INCLUDING

 

 

 

 

 

 

 

 

 

 

 

 

 

 

255Ω

≤ 3 ns

 

 

 

 

 

 

 

 

≤ 3 ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

JIG AND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

JIG AND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SCOPE

(a)

SCOPE

(b)

1041B–3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1041B–4

Equivalent to: THÉ VENIN EQUIVALENT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OUTPUT

 

 

167Ω

1.73V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Note:

3.Tested initially and after any design or process changes that may affect these parameters.

3

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