BSI BS62LV2565TI, BS62LV2565TC, BS62LV2565SI, BS62LV2565SC, BS62LV2565PI Datasheet

	BSI		Very Low Power/Voltage CMOS SRAM
			32K X 8 bit			BS62LV2565
FEATURES					DESCRIPTION
• Wide Vcc operation voltage : 4.5V ~ 5.5V					The BS62LV2565 is a high performance, very low power CMOS
• Very low power consumption :					Static Random Access Memory organized		as 32,768 words by 8 bits
Vcc = 5.0V C-grade : 35mA (Max.) operating current					and operates from a wide range of 4.5V		to 5.5V supply voltage.
	I- grade : 40mA (Max.) operating current				Advanced CMOS	technology and circuit techniques provide both high
	0.4uA (Typ.) CMOS standby current				speed and low power features with a typical CMOS standby current of
• High speed access time :					0.4uA and maximum access time of 55ns in 5V operation.
-55	55ns (Max.) = 5.0V				Easy memory expansion is provided by an active LOW chip
-70	70ns (Max.) = 5.0V				enable (CE), and	active LOW output enable		(OE)	and three-state
• Automatic power down when chip is deselected					output drivers.
• Three state outputs and TTL compatible					The BS62LV2565	has an automatic power down feature, reducing the
• Fully static operation					power consumption significantly when chip is deselected.
• Data retention supply voltage as low as 1.5V					The BS62LV2565	is available in the	JEDEC standard 28 pin
• Easy expansion with CE and			OE	options	330mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP and
					8mmx13.4mm TSOP (normal type).

PRODUCT FAMILY

	PRODUCT	OPERATING	Vcc	SPEED	POWER DISSIPATION		PKG
					STANDBY	Operating
				(ns)
	FAMILY	TEMPERATURE	RANGE		(ICCSB1 , Max)	(ICC , Max)	TYPE
				Vcc=5.0V	Vcc=5.0V	Vcc=5.0V
	BS62LV2565SC						SOP-28
	BS62LV2565TC	0 O C to +70O C	4.5V ~ 5.5V	55 / 70	1.0uA	35mA	TSOP-28
	BS62LV2565PC						PDIP-28
	BS62LV2565JC						SOJ-28
	BS62LV2565DC						DICE
	BS62LV2565SI						SOP-28
	BS62LV2565TI	-40O C to +85O C	4.5V ~ 5.5V	55 / 70	2.0uA	40mA	TSOP-28
	BS62LV2565PI						PDIP-28
	BS62LV2565JI						SOJ-28
	BS62LV2565DI						DICE

PIN CONFIGURATIONS

BLOCK DIAGRAM

		A14		1•		28			VCC
		A12		2		27			WE
		A7		3		26			A13
		A6		4		25			A8
		A5		5	BS62LV2565SC	24			A9
		A4		6		23			A11
					BS62LV2565SI
		A3		7	BS62LV2565PC	22			OE
		A2		8	BS62LV2565JCBS62LV2565PI	21			A10
		A1		9	BS62LV2565JI	20			CE
		A0		10		19			DQ7
		DQ0		11		18			DQ6
		DQ1		12		17			DQ5
		DQ2		13		16			DQ4
OE		GND		14		15			DQ3				A10
		1•					28
A11		2					27						CE
A9		3					26						DQ7
A8		4					25						DQ6
A13		5					24						DQ5
WE		6					23						DQ4
VCC		7		BS62LV2565TC			22						DQ3
A14		8		BS62LV2565TI			21						GND
A12		9					20						DQ2
A7		10					19						DQ1
A6		11					18						DQ0
A5		12					17						A0
A4		13					16						A1
A3		14					15						A2

A5
A6
A7	Address					Memory Array
A12		18		512
			Row
A14	Input
A13	Buffer		Decoder				512 x 512
A8
A9
A11
									512
DQ0	8		Data	8			Column I/O
DQ1			Input
DQ2			Buffer			Write Driver
DQ3				8		Sense Amp
DQ4	8		Data
DQ5									64
			Output
DQ6			Buffer
DQ7						Column Decoder
CE									12
	Control
WE					Address Input Buffer
OE
Vdd
Gnd					A4	A3	A2	A1	A0	A10

Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.

R0201-BS62LV2565	1	Revision 2.2
		April 2001

BSI

BS62LV2565

PIN DESCRIPTIONS

Name

Function

A0-A14 Address Input

These 15 address input select one of the 32768 x 8-bit wordsin the RAM

Chip Enable Input

is active LOW. Chip enables must be active to read from or write to the device. If

CE

CE

chip enable is not active, the device is deselected and is in a standby power mode.

The DQ pins will be in the high impedance state when the device is deselected.

Write Enable Input

The write enable input is active LOW and controls read and write operations. With the

WE

chip selected, when

WE

is HIGH and

OE

is LOW, output data will be present on the

DQ pins; when

WE

is LOW, the data present on the DQ pins will be written into the

selected memory location.

Output Enable Input

The output enable input is active LOW. If the output enable is active while the chip is

OE

selected and the write enable is inactive, data will be present on the DQ pins and they

will be enabled. The DQ pins will be in the high impedance state when

is inactive.

OE

DQ0-DQ7 Data Input/Output

These 8 bi-directional ports are used to read data from or write data into the RAM.

Ports

Vcc

Power Supply

Gnd

Ground

TRUTH TABLE

MODE	WE	CE	OE	I/O OPERATION	Vcc CURRENT
Not selected	X	H	X	High Z	ICCSB, ICCSB1
Output Disabled	H	L	H	High Z	ICC
Read	H	L	L	DOUT	ICC
Write	L	L	X	IN	ICC
				D

ABSOLUTE MAXIMUM RATINGS(1)

SYMBOL	PARAMETER	RATING	UNITS
V TERM	Terminal Voltage with	-0.5 to +6.0	V
	Respect to GND
T BIAS	Temperature Under Bias	-40 to +125	O C
T STG	Storage Temperature	-60 to +150	O C
P T	Power Dissipation	1.0	W
I OUT	DC Output Current	20	mA

1.Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

OPERATING RANGE

	RANGE	AMBIENT	Vcc
		TEMPERATURE
	Commercial	0 O C to +70 O C	4.5V ~ 5.5V
	Industrial	-40 O C to +85 O C	4.5V ~ 5.5V

CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
SYMBOL	PARAMETER	CONDITIONS	MAX.	UNIT
CIN	Input	VIN=0V	6	pF
	Capacitance
CDQ	Input/Output	VI/O=0V	8	pF
	Capacitance

1. This parameter is guaranteed and not tested.

R0201-BS62LV2565	2	Revision 2.2
		April 2001

BSI

BS62LV2565

DC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC )

PARAMETER

PARAMETER

TEST CONDITIONS

MIN.

TYP. (1)

MAX.

UNITS

NAME

VIL

Guaranteed

Input

Low

-0.5

--

0.8

V

Voltage(2)

Vcc=5.0V

VIH

Guaranteed

Input

High

2.2

--

Vcc+0.2

V

Voltage(2)

Vcc=5.0V

IIL

Input Leakage Current

Vcc = Max, VIN = 0V to Vcc

--

--

1

uA

Vcc = Max,

= VIH, or

= VIH,

IOL

Output Leakage Current

CE

OE

--

--

1

uA

VI/O = 0V to Vcc

VOL

Output Low Voltage

Vcc = Max, IOL = 2mA

Vcc=5.0V

--

--

0.4

V

VOH

Output High Voltage

Vcc = Min, IOH = -1mA

Vcc=5.0V

2.4

--

--

V

ICC

Operating

Power

= VIL, IDQ = 0mA, F = Fmax(3)

mA

CE

Vcc=5.0V

--

--

35

Supply Current

ICCSB

Standby Current-TTL

= VIH, IDQ = 0mA

mA

CE

Vcc=5.0V

--

--

2

Vcc-0.2V,

ICCSB1

Standby Current-CMOS

CE

--

0.4

1.0

uA

VIN

Vcc - 0.2V or VIN 0.2V

Vcc=5.0V

1.Typical characteristics are at TA = 25oC.

2.These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3.Fmax = 1/tRC .

DATA RETENTION CHARACTERISTICS ( TA = 0oC to + 70oC )

SYMBOL

PARAMETER

TEST CONDITIONS

MIN.

TYP. (1)

MAX.

UNITS

Vcc - 0.2V

VDR

Vcc for Data Retention

CE

1.5

--

--

V

VIN

Vcc - 0.2V or VIN

0.2V

Vcc -0.2V

ICCDR

Data Retention Current

CE

--

0.01

0.40

uA

VIN

Vcc - 0.2V or VIN

0.2V

tCDR

Chip Deselect to Data

0

--

--

ns

Retention Time

See Retention Waveform

tR

Operation Recovery Time

TRC (2)

--

--

ns

1.Vcc = 1.5V, TA = + 25OC

2.tRC = Read Cycle Time

LOW VCC DATA RETENTION WAVEFORM (1) ( CE Controlled )

				Data Retention Mode
Vcc			Vcc			VDR ≥ 1.5V	Vcc
			t CDR				t R
						≥ Vcc - 0.2V
			VIH		CE		VIH
	CE

R0201-BS62LV2565	3	Revision 2.2
		April 2001

BSI

BS62LV2565

AC TEST CONDITIONS

KEY TO SWITCHING WAVEFORMS

Input Pulse Levels

Vcc/0V

Input Rise and Fall Times

5ns

WAVEFORM

INPUTS

OUTPUTS

Input and Output

MUST BE

MUST BE

Timing Reference Level

0.5Vcc

STEADY

STEADY

MAY CHANGE

WILL BE

AC TEST LOADS AND WAVEFORMS

FROM H TO L

CHANGE

FROM H TO L

5.0V

1928 Ω

5.0V

1928 Ω

MAY CHANGE

WILL BE

FROM L TO H

CHANGE

OUTPUT

OUTPUT

DON ,T CARE:

FROM L TO H

100PF

5PF

CHANGE :

INCLUDING

1020

Ω

INCLUDING

1020

Ω

ANY CHANGE

STATE

JIG AND

JIG AND

PERMITTED

UNKNOWN

SCOPE

SCOPE

DOES NOT

CENTER

FIGURE 1A

FIGURE 1B

APPLY

LINE IS HIGH

IMPEDANCE

THEVENIN EQUIVALENT

”OFF ”STATE

OUTPUT

667 Ω

1.73V

ALL INPUT PULSES

Vcc

10%

10%

90% 90%

GND

→

←

→

← 5ns

FIGURE 2

AC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC, Vcc=5V ) READ CYCLE

JEDEC	PARAMETER	DESCRIPTION	BS62LV2565-55			BS62LV2565-70			UNIT
PARAMETER
NAME	NAME		MIN. TYP. MAX.			MIN.	TYP. MAX.
tAVAX	tRC	Read Cycle Time	55	--	--	70	--	--	ns
tAVQV	tAA	Address Access Time	--	--	55	--	--	70	ns
tELQV	tACS	Chip Select Access Time	--	--	55	--	--	70	ns
tGLQV	tOE	Output Enable to Output Valid	--	--	25	--	--	35	ns
tELQX	tCLZ	Chip Select to Output Low Z	10	--	--	10	--	--	ns
tGLQX	tOLZ	Output Enable to Output in Low Z	10	--	--	10	--	--	ns
tEHQZ	tCHZ	Chip Deselect to Output in High Z	0	--	30	0	--	35	ns
tGHQZ	tOHZ	Output Disable to Output in High Z	0	--	25	0	--	30	ns
tAXOX	tOH	Output Disable to Output Address Change	10	--	--	10	--	--	ns

R0201-BS62LV2565	4	Revision 2.2
		April 2001