BSI BS616UV2011TC, BS616UV2011EI, BS616UV2011EC, BS616UV2011DI, BS616UV2011DC Datasheet

BSI	Ultra Low Power/Voltage CMOS SRAM
	128K x 16 or 256K x 8 bit switchable	BS616UV2021

FEATURES

•Ultra low operation voltage : 1.8 ~ 3.6V

•Ultra low power consumption :

Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade: 20mA (Max.) operating current 0.08uA (Typ.) CMOS standby current

Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade: 25mA (Max.) operating current 0.1uA (Typ.) CMOS standby current

• High speed access time :

-70 70ns (Max.) at Vcc = 2.0V

-10 100ns (Max.) at Vcc = 2.0V

•Automatic power down when chip is deselected

•Three state outputs and TTL compatible

•Fully static operation

•Data retention supply voltage as low as 1.5V

•Easy expansion with CE1, CE2 and OE options

•I/O Configuration x8/x16 selectable by CIO, LB and UB pin

DESCRIPTION

The BS616UV2021 is a high performance, Ultra low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide range of 1.8V to 3.6V supply voltage.

Advanced	CMOS		technology and circuit techniques provide both high
speed and	low	power features		with a typical CMOS standby current
of 0.08uA and		maximum access time of 70/100ns in 2.0V operation.
Easy memory			expansion is	provided by active HIGH chip
enable2(CE2), active LOW chip enable1(CE1), active LOW output
enable(OE) and			three-state output drivers.

The BS616UV2021 has an automatic power down feature, reducing the power consumption significantly when chip is deselected.

The BS616UV2021 is available in DICE form and 48-pin BGA type.

PRODUCT FAMILY

			SPEED		POWER DISSIPATION
PRODUCT	OPERATING	Vcc			STANDBY		Operating
			( ns )						PKG TYPE
					(ICCSB1, Max )		(ICC, Max )
FAMILY	TEMPERATURE	RANGE
			Vcc=		Vcc=	Vcc=	Vcc=	Vcc=
			2.0V		2.0V	3.0V	2.0V	3.0V
BS616UV2021DC	+0 O C to +70 O C	1.8V ~ 3.6V	70 / 100		0.5uA	0.7uA	15mA	20mA	DICE
BS616UV2021AC									BGA-48-0608
BS616UV2021DI	-40 O C to +85 O C	1.8V ~ 3.6V	70 / 100		1uA	1.5uA	20mA	25mA	DICE
									BGA-48-0608
BS616UV2021AI
PIN CONFIGURATION				BLOCK DIAGRAM

A15
A14
A13
A12		Address
A11		20		1024
A10		Input	Row		Memory Array
A9		Buffer
A8			Decoder		1024 x 2048
A7
A6
								2048
		16(8)	Data	16(8)	Column I/O
D0			Input
			Buffer
.	.				Write Driver
.	.	16(8)	16(8)		Sense Amp
.	.		Data				128(256)
.	.
			Output
D15			Buffer		Column Decoder
CE1							14(16)
CE2
WE		Control			Address Input Buffer
OE
UB
LB				A16 A0	A1	A2	A3	A4	A5	(SAE)
CIO
Vdd
Vss

Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.

R0201-BS616UV2021	1	Revision 2.4
		April 2002

BSI

BS616UV2021

PIN DESCRIPTIONS

Name

Function

A0-A16 Address Input

These 17 address inputs select one of the 131,072 x 16-bit words in the RAM.

SAE Address Input

This address input incorporates with the above 17 address input select one of the

262,144 x 8-bit bytes in the RAM if the CIO is LOW. Don't use when CIO is HIGH.

CIO x8/x16 select input

This input selects the organization of the SRAM. 131,072 x 16-bit words configuration

is selected if CIO is HIGH. 262,144 x 8-bit bytes configuration is selected if CIO is

LOW.

Chip Enable 1 Input

CE1

CE1

is active LOW and CE2 is active HIGH. Both chip enables must be active to read

CE2 Chip Enable 2 Input

from or write to the device. If either chip enable is not active, the device is deselected

and is in a standby power mode. The DQ pins will be in the high impedance state

when the device is deselected.

Write Enable Input

The write enable input is active LOW and controls read and write operations. With the

WE

chip selected, when

WE

is HIGH and

OE

is LOW, output data will be present on the

DQ pins; when

is LOW, the data present on the DQ pins will be written into the

WE

selected memory location.

Output Enable Input

The output enable input is active LOW. If the output enable is active while the chip is

OE

selected and the write enable is inactive, data will be present on the DQ pins and they

will be enabled. The DQ pins will be in the high impedance state when

is inactive.

OE

and

Data Byte Control Input

Lower byte and upper byte data input/output control pins. The chip is deselected when

LB

UB

both

LB

and

UB

pins are HIGH.

D0 - D15 Data Input/Output Ports

These 16 bi-directional ports are used to read data from or write data into the RAM.

Vcc

Power Supply

Gnd

Ground

R0201-BS616UV2021	2	Revision 2.4
		April 2002

BSI

BS616UV2021

TRUTH TABLE

MODE

CE2

CIO

SAE

D0~7

D8~15

VCC Current

CE1

OE

WE

LB

UB

Fully Standby

H

X

X

X

X

X

X

X

High-Z

High-Z

ICCSB, ICCSB1

X

L

X

X

Output Disable

L

H

H

H

X

X

X

X

High-Z

High-Z

ICC

L

H

Dout

High-Z

Read from SRAM

L

H

L

H

H

X

ICC

H

L

High-Z

Dout

( WORD mode )

L

L

Dout

Dout

L

H

Din

X

Write to SRAM

L

H

X

L

H

X

ICC

H

L

X

Din

( WORD mode )

L

L

Din

Din

Read from SRAM

L

H

L

H

L

X

X

A-1

Dout

High-Z

ICC

( BYTE Mode )

Write to SRAM

L

H

X

L

L

X

X

A-1

Din

X

ICC

( BYTE Mode )

ABSOLUTE MAXIMUM RATINGS(1)

SYMBOL	PARAMETER	RATING	UNITS
VTERM	Terminal Voltage with	-0.5 to	V
	Respect to GND	Vcc+0.5
TBIAS	Temperature Under Bias	-40 to +125	O C
TSTG	Storage Temperature	-60 to +150	O C
PT	Power Dissipation	1.0	W
IOUT	DC Output Current	20	mA

1.Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

OPERATING RANGE
RANGE	AMBIENT	Vcc
	TEMPERATURE
Commercial	0 O C to +70 O C	1.8V	~	3.6V
Industrial	-40 O C to +85 O C	1.8V	~	3.6V
CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)

	SYMBOL	PARAMETER	CONDITIONS	MAX.	UNIT
	CIN	Input	VIN=0V	6	pF
		Capacitance
	CDQ	Input/Output	VI/O=0V	8	pF
		Capacitance

1. This parameter is guaranteed and not tested.

R0201-BS616UV2021	3	Revision 2.4
		April 2002

		BSI					BS616UV2021
	DC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC)
	PARAMETER		PARAMETER		TEST CONDITIONS		MIN. TYP.(1)		MAX.	UNITS
	NAME					Vcc=2V			0.6
	VIL		Guaranteed Input Low				-0.5	--		V
			Voltage(2)			Vcc=3V			0.8
	V	IH	Guaranteed Input High			Vcc=2V	1.4	--	Vcc+0.2	V
			Voltage(2)			Vcc=3V	2.0
	I IL		Input Leakage Current	Vcc = Max, VIN = 0V to Vcc			--	--	1	uA
	I OL		Output Leakage Current	Vcc = Max, CE1 = VIH or CE2=VIL or OE = VIH,			--	--	1	uA
				V I/O= 0V to Vcc
	VOL		Output Low Voltage	Vcc = Max, IOL = 2mA		Vcc=2V	--	--	0.4	V
						Vcc=3V
	VOH		Output High Voltage	Vcc = Min, IOH = -1mA		Vcc=2V	1.6	--	--	V
						Vcc=3V	2.4
	I CC		Operating Power Supply	Vcc = Max, CE1= VIL, CE2=VIH		Vcc=2V	--	--	15	mA
			Current	IDQ = 0mA, F = Fmax(3)		Vcc=3V	--	--	20
				Vcc = Max, CE1 = V or CE2=V		Vcc=2V	--	--	0.5
	I CCSB		Standby Current-TTL		IH	IL				mA
				IDQ = 0mA		Vcc=3V	--	--	1
				Vcc = Max, CE1 Vcc-0.2V or		Vcc=2V	--	0.08	0.5
				CE2	0.2V,
	I CCSB1		Standby Current-CMOS							uA
				Other inputs Vcc - 0.2V or
						Vcc=3V	--	0.1	0.7
				VIN	0.2V

1.Typical characteristics are at TA = 25oC.

2.These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3.Fmax = 1/tRC .

	R0201-BS616UV2021	4	Revision 2.4
			April 2002