Analog Devices OP249FZ, OP249GS, OP249GS-REEL7, OP249GS-REEL, OP249GP Datasheet

...
Dual, Precision
a
JFET High-Speed Operational Amplifier
FEATURES Fast Slew Rate: 22 V/s Typ Settling Time (0.01%): 1.2 s Max Offset Voltage: 300 V Max High Open-Loop Gain: 1000 V/mV Min Low Total Harmonic Distortion: 0.002% Typ Improved Replacement for AD712, LT1057, OP215,
TL072, and MC34082
APPLICATIONS Output Amplifier for Fast D/As Signal Processing Instrumentation Amplifiers Fast Sample/Holds Active Filters Low Distortion Audio Amplifiers Input Buffer for A/D Converters Servo Controllers
GENERAL DESCRIPTION
The OP249 is a high speed, precision dual JFET op amp, simi­lar to the popular single op amp, the OP42. The OP249 outper­forms available dual amplifiers by providing superior speed with excellent dc performance. Ultrahigh open-loop gain (1 kV/mV minimum), low offset voltage, and superb gain linearity makes the OP249 the industry’s first true precision, dual high speed amplifier.
With a slew rate of 22 V/µs typical and a fast settling time of less than 1.2 µs maximum to 0.01%, the OP249 is an ideal choice
OP249
PIN CONNECTIONS
8-Lead Cerdip (Z Suffix),
8-Lead Plastic Mini-DIP
(P Suffix)
OUT A
1
–IN A
+IN A
A
2
++–
3
4
V– +IN B
8-Lead SO
(S Suffix)
+IN A
1
2
V–
+IN B
–IN B
A
+
3
+
B
4
for high speed bipolar D/A and A/D converter applications. The excellent dc performance of the OP249 allows the full accuracy of high resolution CMOS D/As to be realized.
Symmetrical slew rate, even when driving large load, such as, 600 or 200 pF of capacitance and ultralow distortion, make the OP249 ideal for professional audio applications, active filters, high speed integrators, servo systems, and buffer amplifiers.
The OP249 provides significant performance upgrades to the TL072, AD712, OP215, MC34082, and the LT1057.
V+
8
B
OUT B
7
–IN B
6
5
IN A
8
OUT A
7
V+
6
OUT B
5
0.010 TA = 25ⴗC
= 15V
V
S
= 10V p-p
870ns
100
90
10
0%
10mV
500ns
Figure 1. Fast Settling (0.01%)
V
O
= 10k
R
L
= 1
A
V
0.001
20 10k
100 1k 20k
Figure 2. Low Distortion AV = 1,
= 10 k
R
L
REV. E
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
100
90
10
0%
1µs5V
Figure 3. Excellent Output Drive,
= 600
R
L
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2002
OP249–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ VS = 15 V, TA = 25C, unless otherwise noted.)
OP249A OP249F
Parameter Symbol Conditions Min Typ Max Min Typ Max Unit
Offset Voltage V Long Term Offset Voltage V
OS
OS
(Note 1) 0.8 1.0 mV
0.2 0.5 0.2 0.7 mV
Offset Stability 1.5 1.5 µV/Month Input Bias Current I Input Offset Current I
B
OS
VCM = 0 V, TJ = 25°C 30 75 3075pA VCM = 0 V, TJ = 25°C625 625pA
Input Voltage Range IVR (Note 2) 12.5 12.5 V
±11 ±11 V
–12.5 –12.5 V Common-Mode Rejection CMR V Power-Supply Rejection Ratio PSRR V Large-Signal Voltage Gain A Output Voltage Swing V
VO
O
= ±11 V 80 90 80 90 dB
CM
= ±4.5 V to ±18 V 12 31.6 12 50 µV/V
S
VO = ±10 V, RL = 2 k 1000 1400 500 1200 V/mV RL = 2 k 12.5 12.5 V
±12.0 ±12.0 V
–12.5 –12.5 V Short-Circuit Current Limit I
SC
Output Shorted to 36 36 mA Ground ±20 ±50 ±20 ± 50 mA
–33 –33 mA Supply Current I
SY
Slew Rate SR R Gain-Bandwidth Product GBW (Note 3) 3.5 4.7 3.5 4.7 MHz Settling Time t Phase Margin θ Differential Input Impedance Z Open-Loop Output Resistance R Voltage Noise e Voltage Noise Density e
Current Noise Density i Voltage Supply Range V
NOTES
1
Long-term offset voltage is guaranteed by a 1000 HR life test performed on three independent wafer lots at 125 °C with LTPD of three.
2
Guaranteed by CMR test.
3
Guaranteed by design.
4
Settling time is sample tested.
Specifications subject to change without notice.
S
0
IN
O
p-p 0.1 Hz to 10 Hz 2 2 µV p-p
n
n
n
S
No Load, VO = 0 V 5.6 7.0 5.6 7.0 mA
= 2 k, CL = 50 pF 18 22 18 22 V/µs
L
10 V Step 0.01% 0 dB Gain 55 55 Degrees
4
0.9 1.2 0.9 1.2 µs
1012610
12
6 pF
35 35
fO = 10 Hz 75 75 nV/Hz
= 100 Hz 26 26 nV/Hz
f
O
= 1 kHz 17 17 nV/Hz
f
O
= 10 kHz 16 16 nV/Hz
f
O
fO = 1 kHz 0.003 0.003 pA/Hz
±4.5 ±15 ±18 ±4.5 ± 15 ± 18 V
ELECTRICAL CHARACTERISTICS
(@ VS = 15 V, TA = 25C, unless otherwise noted.)
OP249G
Parameter Symbol Conditions Min Typ Max Unit
Offset Voltage V Input Bias Current I Input Offset Current I
B
OS
OS
VCM = 0 V, TJ = 25°C4075pA VCM = 0 V, TJ = 25°C1025pA
0.4 2.0 mV
Input Voltage Range IVR (Note 1) 12.5 V
±11 V
–12.0 V Common-Mode Rejection CMR V Power Supply Rejection Ratio PSRR V Large Signal Voltage Gain A Output Voltage Swing V
VO
O
= ±11 V 76 90 dB
CM
= ±4.5 V to ±18 V 12 50 µV/V
S
VO = ±10 V; RL = 2 k 500 1100 V/mV RL = 2 k 12.5 V
±12.0 V
–12.5 V Short-Circuit Current Limit I
SC
Output Shorted to Ground 36 mA
±20 ±50 mA
–33 mA Supply Current I
SY
Slew Rate SR R
No Load; VO = 0 V 5.6 7.0 mA
= 2 k, CL = 50 pF 18 22 V/µs
L
Gain Bandwidth Product GBW (Note 2) 4.7 MHz Settling Time t Phase Margin θ Differential Input Impedance Z
S
0
IN
10 V Step 0.01% 0.9 1.2 µs 0 dB Gain 55 Degree
10126 pF
–2–
REV. E
OP249
OP249G
Parameter Symbol Conditions Min Typ Max Unit
Open Loop Output Resistance R Voltage Noise e Voltage Noise Density e
Current Noise Density i Voltage Supply Range V
NOTES
1
Guaranteed by CMR test.
2
Guaranteed by design.
Specifications subject to change without notice.
O
p-p 0.1 Hz to 10 Hz 2 µV p-p
n n
n
S
ELECTRICAL CHARACTERISTICS
fO = 10 Hz 75 nV/Hz
= 100 Hz 26 nV/Hz
f
O
= 1 kHz 17 nV/Hz
f
O
= 10 kHz 16 nV/Hz
f
O
fO = 1 kHz 0.003 pA/Hz
±4.5 ± 15 ±18 V
(@ VS = 15 V, –40C TA +85C for F grades and –55C TA +125C for A grade unless otherwise noted.)
35
Parameter Symbol Conditions Min Typ Max Min Typ Max Unit
OP249A OP249F
Offset Voltage V
OS
0.12 1.0 0.5 1.1 mV
Offset Voltage Temperature
Coefficient TCV Input Bias Current I Input Offset Current I
B
OS
OS
(Note 1) 4 20 0.3 4.0 nA (Note 1) 0.04 4 0.02 1.2 nA
1 5 2.2 6 µV/°C
Input Voltage Range IVR (Note 2) 12.5 12.5 V
±11 ±11 V
–12.5 –12.5 V Common-Mode Rejection CMR V Power-Supply Rejection Ratio PSRR V Large-Signal Voltage Gain A Output Voltage Swing V
VO
O
= ±11 V 76 110 80 90 dB
CM
= ±4.5 V to ±18 V 5 50 7 100 µV/V
S
RL = 2 k; VO = ±10 V 500 1400 250 1200 V/mV RL = 2 k 12.5 12.5 V
±12 ±12 V
–12.5 –12.5 V Short-Circuit Current Limit I
SC
Output Shorted to Ground ± 10 ± 60 ± 18 ±60 mA
Supply Current I
NOTES
1
TJ = 85°C for F Grades; TJ = 125°C for A Grade.
2
Guaranteed by CMR test.
Specifications subject to change without notice.
SY
ELECTRICAL CHARACTERISTICS
No Load, VO = 0 V 5.6 7.0 5.6 7.0 mA
(@ VS = 15 V, –40C TA +85C for unless otherwise noted.)
OP249G
Parameter Symbol Conditions Min Typ Max Unit
Offset Voltage V
OS
1.0 3.6 mV
Offset Voltage Temperature
Coefficient TCV Input Bias Current I Input Offset Current I
B
OS
OS
(Note 1) 0.5 4.5 nA (Note 1) 0.04 1.5 nA
625 µV/°C
Input Voltage Range IVR (Note 2) 12.5 V
±11 V
–12.5 V Common-Mode Rejection CMR V Power-Supply Rejection Ratio PSRR V Large-Signal Voltage Gain A Output Voltage Swing V
VO
O
= ±11 V 76 95 dB
CM
= ±4.5 V to ±18 V 10 100 µV/V
S
RL = 2 k; VO = ±10 V 250 1200 V/mV RL = 2 k 12.5 V
±12.0 V
–12.5 V Short-Circuit Current Limit I Supply Current I
NOTES
1
TJ = 85°C.
2
Guaranteed by CMR test.
Specifications subject to change without notice.
SC
SY
Output Shorted to Ground ±18 ±60 mA No Load, VO = 0 V 5.6 7.0 mA
–3–REV. E
OP249
WARNING!
ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V
Input Voltage Differential Input Voltage
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V
2
. . . . . . . . . . . . . . . . . . . . . . . 36 V
1
Output Short-Circuit Duration . . . . . . . . . . . . . . . . Indefinite
Storage Temperature Range . . . . . . . . . . . . –65°C to +175°C
Operating Temperature Range
OP249A (Z) . . . . . . . . . . . . . . . . . . . . . . . –55°C to +125°C
OP249E, F (Z) . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
OP249G (P, S) . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Junction Temperature
OP249 (Z) . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +175°C
OP249 (P, S) . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) . . . . . . . 300°C

ORDERING GUIDE

Model Temperature Range Package Descriptions Package Options
OP249AZ –55°C to +125°C 8-Lead Cerdip Q-8 OP249FZ –40°C to +85°C 8-Lead Cerdip Q-8 OP249GP –40°C to +85°C 8-Lead Plastic DIP N-8 OP249GS
*
–40°C to +85°C 8-Lead SO SO-8 OP249GS-REEL –40°C to +85°C 8-Lead SO SO-8 OP249GS-REEL7 –40°C to +85°C 8-Lead SO SO-8
NOTES *For availability and burn-in information on SO and PLCC packages, contact your local sales office.
Package Type
3
JA
JC
Unit
8-Lead Hermetic DIP (Z) 134 12 °C/W 8-Lead Plastic DIP (P) 96 37 °C/W 8-Lead SO (S) 150 41 °C/W
NOTES
1
Absolute maximum ratings apply to packaged parts, unless otherwise noted.
2
For supply voltages less than ± 18 V, the absolute maximum input voltage is equal
to the supply voltage.
3
θJA is specified for worst-case mounting conditions, i.e., θJA is specified for device
in socket for cerdip and P-DIP packages; θJA is specified for device soldered to printed circuit board for SO package.
*
For Military processed devices, please refer to the Standard Microcircuit Drawing (SMD) available at www.dscc.dla.mil/programs/milspec/default.asp
SMD Part Number ADI Equivalent
5962-9151901M2A OP249ARCMDA 5962-9151901MGA OP249AJMDA 5962-9151901MPA OP249AZMDA

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP249 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
–4–
REV. E
Typical Performance Characteristics–
OP249
120
TA = 25ⴗC
100
OPEN-LOOP GAIN – dB
–20
= 15V
V
S
= 2k
R
L
80
60
40
20
0
1k
GAIN
PHASE
10k 100k 1M 10M 100M
FREQUENCY – Hz
m = 55
TPC 1. Open-Loop Gain, Phase vs. Frequency
120
TA = 25ⴗC
= 15V
V
S
+PSRR
–PSRR
10k 100k 1M
POWER SUPPLY REJECTION – dB
100
80
60
40
20
0
10
100
FREQUENCY – Hz
1k
TPC 4. Power Supply Rejection vs. Frequency
0
45
90
135
180
225
65
VS = ⴞ15V
60
m
55
PHASE – C
PHASE MARGIN – C
50
45
75
50 25 0 25 50 75 100 125
TEMPERATURE – C
GBW
TPC 2. Gain Bandwidth Product, Phase Margin vs. Temperature
28
VS = 15V
= 2k
R
L
26
CL = 50pF
24
22
20
SLEW RATE – V/␮s
18
16
50 25 0 25 50 75 100 125
75
TEMPERATURE C
SR
+SR
TPC 5. Slew Rate vs. Temperature
10
8
6
4
2
GAIN BANDWIDTH PRODUCT – MHz
COMMON-MODE REJECTION – dB
140
120
100
TA = 25ⴗC
= 15V
V
S
80
60
40
20
0
100
1k
10k 100k 1M 10M
FREQUENCY – Hz
TPC 3. Common-Mode Rejection vs. Frequency
28
TA = 25ⴗC
= 15V
V
S
26
= 2k
R
L
24
22
20
SLEW RATE – V/␮s
18
16
0.2 0.4 0.6 0.8 1.0
0
DIFFERENTIAL INPUT VOLTAGE – Volts
TPC 6. Slew Rate vs. Differential Input Voltage
35
TA = 25ⴗC
= 15V
V
S
30
NEGATIVE
25
20
POSITIVE
15
SLEW RATE – V/␮s
10
5
100 200 300 400 500
0
CAPACITIVE LOAD – pF
TPC 7. Slew Rate vs. Capacitive Load
10
TA = 25ⴗC
8
= 15V
V
2
4
OUTPUT STEP SIZE Volts
6
8
10
S
= 1
A
VCL
6
4
2
0
0
200 400 600 800 1000
0.1%
0.01%
0.01%
0.1%
SETTLING TIME – ns
TPC 8. Settling Time vs. Step Size
–5–REV. E
100
TA = 25ⴗC
= 15V
V
S
80
60
40
20
VOLTAGE NOISE DENSITY – nV Hz
0
0 100
FREQUENCY – Hz
1k 10k
TPC 9. Voltage Noise Density vs. Frequency
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