Analog Devices OP2177ARM, OP2177AR, OP4177AR, OP1177AR, OP4177ARM Datasheet

...
REV. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
a
OP1177/OP2177/OP4177
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2002
Precision Low Noise, Low Input
Bias Current Operational Amplifiers
FEATURES Low Offset Voltage: 60 V Max Very Low Offset Voltage Drift: 0.7 V/C Max Low Input Bias Current: 2 nA Max Low Noise: 8 nV/
Hz
CMRR, PSRR, and A
VO
> 120 dB Min Low Supply Current: 400 A/Amp Dual Supply Operation: 2.5 V to 15 V Unity Gain Stable No Phase Reversal Inputs Internally Protected Beyond Supply Voltage
APPLICATIONS Wireless Base Station Control Circuits Optical Network Control Circuits Instrumentation Sensors and Controls
Thermocouples RTDs Strain Bridges Shunt Current Measurements
Precision Filters
GENERAL DESCRIPTION
The OPx177 family consists of very high-precision, single, dual, and quad amplifiers featuring extremely low offset voltage and drift, low input bias current, low noise, and low power con­sumption. Outputs are stable with capacitive loads of over 1,000 pF with no external compensation. Supply current is less than 500 µA per amplifier at 30 V. Internal 500 series resis- tors protect the inputs, allowing input signal levels several volts beyond either supply without phase reversal.
Unlike previous high-voltage amplifiers with very low offset voltages, the OP1177 and OP2177 are available in the tiny MSOP 8-lead sur­face-mount package, while the OP4177 is available in TSSOP14. Moreover, specified performance in the MSOP/TSSOP package is identical to performance in the SOIC package.
OPx177 family offers the widest specified temperature range of any high-precision amplifier in surface-mount packaging. All versions are fully specified for operation from –40°C to +125°C for the most demanding operating environments.
Applications for these amplifiers include precision diode power measurement, voltage and current level setting, and level detec­tion in optical and wireless transmission systems. Additional applications include line powered and portable instrumentation
FUNCTIONAL BLOCK DIAGRAM
8-Lead MSOP
(RM-Suffix)
ININ
V
V+
NC
NC
1
45
8
OP1177
NC
OUT
NC = NO CONNECT
8-Lead SOIC
(R-Suffix)
1
2
3
4
8
7
6
5
IN
V
+IN
V+
OUT
NC
NC
NC
NC = NO CONNECT
OP1177
8-Lead SOIC
(R-Suffix)
1
2
3
4
8
7
6
5
OP2177
IN A
V
+IN A
OUT B
IN B
V+
+IN B
OUT A
8-Lead MSOP
(RM-Suffix)
IN AIN A
V
OUT B –IN B +IN B
V+
1
45
8
OP2177
OUT A
14-Lead TSSOP
(RU-Suffix)
OUT A
–IN A +IN A
V+ +IN B –IN B
OUT B
–IN D +IN D V–
OUT D
–IN C OUT C
+IN C
14
8
1
7
OP4177
14-Lead SOIC
(R-Suffix)
OUT B
7
8
+IN B
5
10
IN B
6
9
V+
4
11
OP4177
IN A
2
13
+IN A
3
12
OUT A
1
14
OUT C
+IN C
IN C
V
IN D
+IN D
OUT D
OP4177
and controls—thermocouple, RTD, strain-bridge, and other sensor signal conditioning—and precision filters.
The OP1177 (single) and the OP2177 (dual) amplifiers are available in the 8-lead MSOP and 8-lead SOIC packages. The OP4177 (quad) is available in 14-lead narrow SOIC and 14-lead TSSOP packages. MSOP and TSSOP packages are available in tape and reel only.
REV. B
–2–
OP1177/OP2177/OP4177–SPECIFICATIONS
(@ VS = 5.0 V, VCM = 0 V, TA = 25C, unless otherwise noted.)
Parameter Symbol Conditions Min Typ* Max Unit
INPUT CHARACTERISTICS
Offset Voltage
OP1177 V
OS
15 60 µV
OP2177/4177 V
OS
15 75 µV
OP1177/2177 V
OS
–40°C < TA < +125°C 25 100 µV
OP4177 V
OS
–40°C < TA < +125°C 25 120 µV
Input Bias Current I
B
–40°C < TA < +125°C –2 +0.5 +2 nA
Input Offset Current I
OS
–40°C < TA < +125°C –1 +0.2 +1 nA
Input Voltage Range –3.5 +3.5 V Common-Mode Rejection Ratio CMRR V
CM
= –3.5 V to +3.5 V 120 126 dB
–40°C < T
A
< +125°C 118 125 dB
Large Signal Voltage Gain A
VO
RL = 2 k , VO = –3.5 V to +3.5 V 1,000 2,000 V/mV
Offset Voltage Drift
OP1177/OP2177 ∆V
OS
/T –40°C < TA < +125°C 0.2 0.7 µV/°C
OP4177 ∆VOS/T –40°C < TA < +125°C 0.3 0.9 µV/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
IL = 1 mA, –40°C < TA < +125°C +4 +4.1 V
Output Voltage Low V
OL
IL = 1 mA, –40°C < TA < +125°C –4.1 –4 V
Output Current I
OUT
V
DROPOUT
< 1.2 V ±10 mA
POWER SUPPLY
Power Supply Rejection Ratio
OP1177 PSRR V
S
= ±2.5 V to ±15 V, 120 130 dB
–40°C < T
A
< +125°C 115 125 dB
OP2177/OP4177 PSRR V
S
= ±2.5 V to ±15 V, 118 121 dB
–40°C < T
A
< +125°C 114 120 dB
Supply Current/Amplifier I
SY
VO = 0 V 400 500 µA –40°C < TA < +125°C 500 600 µA
DYNAMIC PERFORMANCE
Slew Rate SR R
L
= 2 k 0.7 V/µs
Gain Bandwidth Product GBP 1.3 MHz
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 0.4 µV p-p Voltage Noise Density e
n
f = 1 kHz 7.9 8.5 nV/Hz
Current Noise Density i
n
f = 1 kHz 0.2 pA/Hz
MULTIPLE AMPLIFIERS CHANNEL SEPARATION C
S
DC 0.01 µV/V f = 100 kHz –120 dB
*Typical values cover all parts within one standard deviation of the average value. Average values, given in many competitors ’ data sheets as “typical,” give unrealistically
low estimates for parameters that can have both positive and negative values.
Specifications subject to change without notice.
REV. B
–3–
OP1177/OP2177/OP4177
ELECTRICAL CHARACTERISTICS
(@ VS = 15 V, VCM = 0 V, TA = 25C, unless otherwise noted.)
Parameter Symbol Conditions Min Typ* Max Unit
INPUT CHARACTERISTICS
Offset Voltage
OP1177 V
OS
15 60 µV
OP2177/OP4177 V
OS
15 75 µV
OP1177/OP2177 V
OS
–40°C < TA < +125°C 25 100 µV
OP4177 V
OS
–40°C < TA < +125°C 25 120 µV
Input Bias Current I
B
–40°C < TA < +125°C –2 +0.5 +2 nA
Input Offset Current I
OS
–40°C < TA < +125°C –1 +0.2 +1 nA
Input Voltage Range –13.5 +13.5 V Common-Mode Rejection Ratio CMRR V
CM
= –13.5 V to +13.5 V
–40°C < T
A
< +125°C 120 125 dB
Large Signal Voltage Gain A
VO
RL = 2 k , VO = –13.5 V to +13.5 V 1,000 3,000 V/mV
Offset Voltage Drift
OP1177/OP2177 ∆V
OS
/T –40°C < TA < +125°C 0.2 0.7 µV/°C
OP4177 ∆VOS/T –40°C < TA < +125°C 0.3 0.9 µV/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
IL = 1 mA, –40°C < TA < +125°C +14 +14.1 V
Output Voltage Low V
OL
IL = 1 mA, –40°C < TA < +125°C –14.1 –14 V
Output Current I
OUT
V
DROPOUT
< 1.2 V ±10 mA
Short Circuit Current I
SC
±35 mA
POWER SUPPLY
Power Supply Rejection Ratio
OP1177 PSRR V
S
= ±2.5 V to ±15 V, 120 130 dB
–40°C < T
A
< +125°C 115 125 dB
OP2177/OP4177 PSRR V
S
= ±2.5 V to ±15 V, 118 121 dB
–40°C < T
A
< +125°C 114 120 dB
Supply Current/Amplifier I
SY
VO = 0 V 400 500 µA –40°C < TA < +125°C 500 600 µA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 2 k 0.7 V/µs Gain Bandwidth Product GBP 1.3 MHz
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 0.4 µV p-p Voltage Noise Density e
n
f = 1 kHz 7.9 8.5 nV/Hz
Current Noise Density i
n
f = 1 kHz 0.2 pA/Hz
MULTIPLE AMPLIFIERS CHANNEL SEPARATION C
S
DC 0.01 µV/V f = 100 kHz –120 dB
*Typical values cover all parts within one standard deviation of the average value. Average values, given in many competitors ’ data sheets as “typical,” give unrealistically
low estimates for parameters that can have both positive and negative values.
Specifications subject to change without notice.
REV. B
OP1177/OP2177/OP4177
–4–
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
S–
to V
S+
Differential Input Voltage . . . . . . . . . . . . . . ±Supply Voltage
Storage Temperature Range
R, RM, and RU Packages . . . . . . . . . . . –65°C to +150°C
Operating Temperature Range
OP1177/OP2177/OP4177 . . . . . . . . . . . –40°C to +125°C
Junction Temperature Range
R, RM, and RU Packages . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering, 10 sec) . . . . . . . 300°C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating condi­tions for extended periods may affect device reliability.
Package Type
JA
1
JC
Unit
8-Lead MSOP (RM)
2
190 44 °C/W 8-Lead SOIC (R) 158 43 °C/W 14-Lead SOIC (R) 120 36 °C/W 14-Lead TSSOP (RU) 240 43 °C/W
NOTES
1
θJA is specified for worst-case conditions, i.e., θ
JA
is specified for device soldered
in circuit board for surface-mount packages.
2
MSOP is only available in tape and reel.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP1177/OP2177/OP4177 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ORDERING GUIDE
Temperature Package Package Branding
Model Range Description Option Information
OP1177ARM –40°C to +125°C 8-Lead MINI_SOIC RM-8 AZA OP1177AR –40°C to +125°C 8-Lead SOIC SO-8 OP2177ARM –40°C to +125°C 8-Lead MINI_SOIC RM-8 B2A OP2177AR –40°C to +125°C 8-Lead SOIC SO-8 OP4177AR –40°C to +125°C 14-Lead SOIC R-14 OP4177ARU –40°C to +125°C 14-Lead TSSOP RU-14
REV. B
–5–
OP1177/OP2177/OP4177
INPUT OFFSET VOLTAGE – V
NUMBER OF AMPLIFIERS
50
15
0
40
40
30 20 10
02030
VSY = ⴞ15V
10
45
20
10
5
30
25
40
35
TPC 1. Input Offset Voltage Distribution
LOAD CURRENT – mA
OUTPUT VOLTAGE – V
1.8
0.8
0
0.001 0.01 10
0.1 1
0.4
VSY = ⴞ15V T
A
= 25ⴗC
0.2
0.6
1.0
SINK
SOURCE
1.4
1.6
1.2
TPC 4. Output Voltage to Supply Rail vs. Load Current
CLOSED-LOOP GAIN – dB
120
100
80
80
60
40
20
0
20
40
60
FREQUENCY – Hz
1k 10k 100M
100k 1M 10M
VSY = ⴞ15V V
IN
= 4mV p-p
C
L
= 0
R
L
=
A
V
= 100
AV = 10
AV = 1
TPC 7. Closed-Loop Gain vs. Frequency
TCVOS – V/C
NUMBER OF AMPLIFIERS
90
30
0
0.05
0.15 0.25 0.35
0.45 0.55
40
20
10
60
50
80
70
VSY = ⴞ15V
TPC 2. Input Offset Voltage Drift Distribution
TEMPERATURE – ⴗC
INPUT BIAS CURRENT – nA
3
3
50
150
0 50 100
2
0
1
2
VSY = ⴞ15V
1
TPC 5. Input Bias Current vs. Temperature
OUTPUT IMPEDANCE –
500
450
0
400
350
300
250
200
150
100
50
FREQUENCY – Hz
100 1k 10k
100k 1M
VSY = ⴞ15V V
IN
= 50mV p-p
A
V
= 100
AV = 10
AV = 1
TPC 8. Output Impedance vs. Frequency
INPUT BIAS CURRENT – nA
NUMBER OF AMPLIFIERS
140
0
0.6
0.1 0.2 0.3 0.5
120
80
60
40
20
100
00.4
VSY = ⴞ15V
0.7
TPC 3. Input Bias Current Distribution
VSY = ⴞ15V C
L
= 0
R
L
=
FREQUENCY – Hz
PHASE SHIFT – Degrees
45
90
135
180
0
100k 1M 10M
GAIN
PHASE
OPEN-LOOP GAIN – dB
60
50
40
30
20
10
0
10
20
TPC 6. Open-Loop Gain and Phase Shift vs. Frequency
VSY = ⴞ15V C
L
= 300pF
R
L
= 2k
V
IN
= 4V
A
V
= 1
TIME – 100s/DIV
VOLTAGE – 1V/DIV
GND
TPC 9. Large Signal Transient Response
Typical Performance Characteristics–
REV. B
OP1177/OP2177/OP4177
–6–
TIME – 100s/DIV
VOLTAGE – 100mV/DIV
VSY = ⴞ15V C
L
= 1,000pF
R
L
= 2k
V
IN
= 100mV
A
V
= 1
GND
TPC 10. Small Signal Transient Response
0V
15V
TIME – 4s/DIV
INPUT
OUTPUT
VSY = ⴞ15V R
L
= 10k
A
V
= ⴚ100
V
IN
= 200mV
200mV
0V
TPC 13. Negative Overvoltage Recovery
TIME – 1s/DIV
V
NOISE
– 0.2V/DIV
VSY = ⴞ15V
TPC 16. 0.1 Hz to 10 Hz Input Voltage Noise
+OS
CAPACITANCE – pF
SMALL SIGNAL OVERSHOOT – %
110 10
k
100
VSY = ⴞ15V R
L
= 2k
V
IN
= 100mV p-p
50
45
0
40
35
30
25
20
15
10
5
1k
OS
TPC 11. Small Signal Overshoot vs. Load Capacitance
FREQUENCY – Hz
CMRR – dB
0
10 10k 10M
140
120
100
80
60
40
20
100 1k 100k 1M
VSY = ⴞ15V
TPC 14. CMRR vs. Frequency
VOLTAGE NOISE DENSITY – nV/ Hz
FREQUENCY – Hz
2
0 25050 100 150 200
4
6
8
10
12
14
16
18
VSY = ⴞ15V
TPC 17. Voltage Noise Density
0V
15V
TIME – 10s/DIV
INPUT
OUTPUT
VSY = ⴞ15V R
L
= 10k
A
V
= ⴚ100
V
IN
= 200mV
+200mV
0V
TPC 12. Positive Overvoltage Recovery
FREQUENCY – Hz
PSRR – dB
0
10 10k 10M
140
120
100
80
60
40
20
100 1k 100k 1M
+PSRR
PSRR
VSY = ⴞ15V
TPC 15. PSRR vs. Frequency
V
SY
= 15V
I
SC
TEMPERATURE – ⴗC
SHORT CIRCUIT CURRENT – mA
35
0 50
150
0 50 100
30
5
25
20
15
10
I
SC
TPC 18. Short Circuit Current vs. Temperature
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