Analog Devices OP196GS, OP196HRU, OP196GP Datasheet
REV. C
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a
Micropower, Rail-to-Rail Input and Output
Operational Amplifiers
OP196/OP296/OP496
FEATURES
Rail-to-Rail Input and Output Swing
Low Power: 60 A/Amplifier
Gain Bandwidth Product: 450 kHz
Single-Supply Operation: 3 V to 12 V
Low Offset Voltage: 300 V max
High Open-Loop Gain: 500 V/mV
Unity-Gain Stable
No Phase Reversal
APPLICATIONS
Battery Monitoring
Sensor Conditioners
Portable Power Supply Control
Portable Instrumentation
GENERAL DESCRIPTION
The OP196 family of CBCMOS operational amplifiers features
micropower operation and rail-to-rail input and output ranges.
The extremely low power requirements and guaranteed operation from 3 V to 12 V make these amplifiers perfectly suited to
monitor battery usage and to control battery charging. Their
dynamic performance, including 26 nV/√Hz voltage noise
density, recommends them for battery-powered audio applications. Capacitive loads to 200 pF are handled without oscillation.
The OP196/OP296/OP496 are specified over the HOT extended
industrial (–40°C to +125°C) temperature range. 3 V operation
is specified over the 0°C to 125°C temperature range.
The single OP196 and the dual OP296 are available in 8-lead
SO-8 surface mount packages. The dual OP296 is available in
8-lead PDIP. The quad OP496 is available in 14-lead plastic
DIP and narrow SO-14 surface-mount packages.
8-Lead Narrow-Body SO
1
2
3
4
8
7
6
5
OP196
OUT A
V+
NULL
NC
NULL
–IN A
+IN A
V–
NC = NO CONNECT
PIN CONFIGURATIONS
8-Lead Narrow-Body SO
1
2
3
4
8
7
6
5
OP296
OUT A
–IN A
+IN A
V–
OUT B
–IN B
+IN B
V+
8-Lead Plastic DIP
1
2
3
4
8
7
6
5
OP296
OUT B
–IN B
+IN B
V+
OUT A
–IN A
+IN A
V–
14-Lead Plastic DIP
1
2
3
4
5
6
7
14
13
12
11
10
9
8
OP496
OUT D
–IN D
+IN D
V–
+IN C
–IN C
OUT C
OUT A
–IN A
+IN A
V+
+IN B
–IN B
OUT B
14-Lead Narrow-Body SO
1
2
3
4
5
6
7
14
13
12
11
10
9
8
OP496
OUT D
–IN D
+IN D
V–
+IN C
–IN C
OUT C
OUT A
–IN A
+IN A
V+
+IN B
–IN B
OUT B
8-Lead TSSOP
OP296
OUT A
–IN A
+IN A
V–
OUT B
–IN B
+IN B
V+
8
1
4
5
14-Lead TSSOP
(RU Suffix)
OP496
OUT A
–IN A
+IN A
V+
OUT B
–IN B
+IN B
OUT D
–IN D
+IN D
V–
OUT C
+IN C
–IN C
14
1
7
8
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 2002
OP196/OP296/OP496–SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
OP196G, OP296G, OP496G 35 300 µV
–40°C ≤ T
A
≤ +125°C 650 µV
OP296H, OP496H 800 µV
–40°C ≤ T
A
≤ +125°C 1.2 mV
Input Bias Current I
B
–40°C ≤ TA ≤ +125°C ±10 ±50 nA
Input Offset Current I
OS
±1.5 ±8nA
–40°C ≤ T
A
≤ +125°C ±20 nA
Input Voltage Range V
CM
05.0V
Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 5.0 V,
–40°C ≤ T
A
≤ +125°C65 dB
Large Signal Voltage Gain A
VO
RL = 100 kΩ,
0.30 V ≤ V
OUT
≤ 4.7 V,
–40°C ≤ T
A
≤ +125°C 150 200 V/mV
Long-Term Offset Voltage V
OS
G Grade, Note 1 550 µV
H Grade, Note 1 1 mV
Offset Voltage Drift ∆V
OS
/∆T G Grade, Note 2 1.5 µV/°C
H Grade, Note 2 2 µV/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing High V
OH
IL = –100 µA 4.85 4.92 V
I
L
= 1 mA 4.30 4.56 V
I
L
= 2 mA 4.1 V
Output Voltage Swing Low V
OL
IL = –1 mA 36 70 mV
I
L
= –1 mA 350 550 mV
I
L
= –2 mA 750 mV
Output Current I
OUT
±4mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR ±2.5 V ≤ VS ≤ ±6 V,
–40°C ≤ T
A
≤ +125°C85 dB
Supply Current per Amplifier I
SY
V
OUT
= 2.5 V, RL =
∞
60 µA
–40°C ≤ TA ≤ +125°C4580µA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 100 kΩ 0.3 V/µs
Gain Bandwidth Product GBP 350 kHz
Phase Margin ø
m
47 Degrees
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 0.8 µV p-p
Voltage Noise Density e
n
f = 1 kHz 26 nV/√Hz
Current Noise Density i
n
f = 1 kHz 0.19 pA/√Hz
NOTES
1
Long-term offset voltage is guaranteed by a 1,000 hour life test performed on three independent lots at 12 5°C, with an LTPD of 1.3.
2
Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta.
Specifications subject to change without notice.
–2–
(@ VS = 5.0 V, VCM = 2.5 V, TA = 25ⴗC, unless otherwise noted.)
REV. C
ELECTRICAL SPECIFICATIONS
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
OP196G, OP296G, OP496G 35 300 µV
0°C ≤ T
A
≤ 125°C 650 µV
OP296H, OP496H 800 µV
0°C ≤ T
A
≤ 125°C 1.2 mV
Input Bias Current I
B
±10 ±50 nA
Input Offset Current I
OS
±1 ± 8nA
Input Voltage Range V
CM
0 3.0 V
Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 3.0 V,
0°C ≤ T
A
≤ 125°C60 dB
Large Signal Voltage Gain A
VO
RL = 100 kΩ 80 200 V/mV
Long-Term Offset Voltage V
OS
G Grade, Note 1 550 µV
H Grade, Note 1 1 mV
Offset Voltage Drift ∆V
OS
/∆T G Grade, Note 2 1.5 µV/°C
H Grade, Note 2 2 µV/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing High V
OH
IL = 100 µA 2.85 V
Output Voltage Swing Low V
OL
IL = –100 µA70mV
POWER SUPPLY
Supply Current per Amplifier I
SY
V
OUT
= 1.5 V, RL =
∞
40 60 µA
0°C ≤ TA ≤ 125°C80µA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 100 kΩ 0.25 V/µs
Gain Bandwidth Product GBP 350 kHz
Phase Margin ø
m
45 Degrees
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 0.8 µV p-p
Voltage Noise Density e
n
f = 1 kHz 26 nV/√Hz
Current Noise Density i
n
f = 1 kHz 0.19 pA/√Hz
NOTES
1
Long-term offset voltage is guaranteed by a 1,000 hour life test performed on three independent lots at 12 5°C, with an LTPD of 1.3.
2
Offset voltage drift is the average of the 0°C to 25°C delta and the 25°C to 125°C delta.
Specifications subject to change without notice.
OP196/OP296/OP496
REV. C
–3–
(@ VS = 3.0 V, VCM = 1.5 V, TA = 25ⴗC, unless otherwise noted.)
OP196/OP296/OP496
REV. C
–4–
ELECTRICAL SPECIFICATIONS
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
OP196G, OP296G, OP496G 35 300 µV
0°C ≤ T
A
≤ 125°C 650 µV
OP296H, OP496H 800 µV
0°C ≤ T
A
≤ 125°C 1.2 mV
Input Bias Current I
B
–40°C ≤ TA ≤ +125°C ±10 ±50 nA
Input Offset Current I
OS
±1 ± 8nA
–40°C ≤ T
A
≤ +125°C ±15 nA
Input Voltage Range V
CM
012V
Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 12 V,
–40°C ≤ T
A
≤ +125°C65 dB
Large Signal Voltage Gain A
VO
RL = 100 kΩ 300 1000 V/mV
Long-Term Offset Voltage V
OS
G Grade, Note 1 550 µV
H Grade, Note 1 1 mV
Offset Voltage Drift ∆V
OS
/∆T G Grade, Note 2 1.5 µV/°C
H Grade, Note 2 2 µV/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing High V
OH
IL = 100 µA 11.85 V
I
L
= 1 mA 11.30 V
Output Voltage Swing Low V
OL
IL = –1 mA 70 mV
I
L
= –1 mA 550 mV
Output Current I
OUT
±4mA
POWER SUPPLY
Supply Current per Amplifier I
SY
V
OUT
= 6 V, RL =
∞
60 µA
–40°C ≤ T
A
≤ +125°C80µA
Supply Voltage Range V
S
312V
DYNAMIC PERFORMANCE
Slew Rate SR RL = 100 kΩ 0.3 V/µs
Gain Bandwidth Product GBP 450 kHz
Phase Margin ø
m
50 Degrees
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 0.8 µV p-p
Voltage Noise Density e
n
f = 1 kHz 26 nV/√Hz
Current Noise Density i
n
f = 1 kHz 0.19 pA/√Hz
NOTES
1
Long-term offset voltage is guaranteed by a 1,000 hour life test performed on three independent lots at 12 5°C, with an LTPD of 1.3.
2
Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta.
Specifications subject to change without notice.
(@ VS = 12.0 V, VCM = 6 V, TA = 25ⴗC, unless otherwise noted.)
OP196/OP296/OP496
REV. C
–5–
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 V
Input Voltage
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 V
Differential Input Voltage
2
. . . . . . . . . . . . . . . . . . . . . . . . 15 V
Output Short Circuit Duration . . . . . . . . . . . . . . . . . Indefinite
Storage Temperature Range
P, S, RU Package . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Operating Temperature Range
OP196G, OP296G, OP496G, H . . . . . . . – 40°C to +125°C
Junction Temperature Range
P, S, RU Package . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300°C
Package Type
JA
3
JC
Unit
8-Lead Plastic DIP 103 43 °C/W
8-Lead SOIC 158 43 °C/W
8-Lead TSSOP 240 43 °C/W
14-Lead Plastic DIP 83 39 °C/W
14-Lead SOIC 120 36 °C/W
14-Lead TSSOP 180 35 °C/W
NOTES
1
Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.
2
For supply voltages less than 15 V, the absolute maximum input voltage is
equal to the supply voltage.
3
θJA is specified for the worst case conditions, i.e., θJA is specified for device in
socket for P-DIP package; θJA is specified for device soldered in circuit board
for SOIC and TSSOP packages.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the OP196/OP296/OP496 feature proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high-energy electrostatic discharges. Therefore,
proper ESD precautions are recommended to avoid performance degradation or loss of functionalit y.
WARNING!
ESD SENSITIVE DEVICE
ORDERING GUIDE
Temperature Package Package
Model Range Description Option
OP196GS –40°C to +125°C 8-Lead SOIC SO-8
OP296GP* –40°C to +125°C 8-Lead Plastic DIP N-8
OP296GS –40°C to +125°C 8-Lead SOIC SO-8
OP296HRU –40°C to +125°C 8-Lead TSSOP RU-8
OP496GP* –40°C to +125°C 14-Lead Plastic DIP N-14
OP496GS –40°C to +125°C 14-Lead SOIC SO-14
OP496HRU –40°C to +125°C 14-Lead TSSOP RU-14
*
Not for new design, obsolete April 2002.
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