Analog Devices OP196GS, OP196HRU, OP196GP Datasheet

REV. C
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
a
Micropower, Rail-to-Rail Input and Output
Operational Amplifiers
FEATURES Rail-to-Rail Input and Output Swing Low Power: 60 A/Amplifier Gain Bandwidth Product: 450 kHz Single-Supply Operation: 3 V to 12 V Low Offset Voltage: 300 V max High Open-Loop Gain: 500 V/mV Unity-Gain Stable No Phase Reversal
APPLICATIONS Battery Monitoring Sensor Conditioners Portable Power Supply Control Portable Instrumentation
GENERAL DESCRIPTION
The OP196 family of CBCMOS operational amplifiers features micropower operation and rail-to-rail input and output ranges.
The extremely low power requirements and guaranteed opera­tion from 3 V to 12 V make these amplifiers perfectly suited to monitor battery usage and to control battery charging. Their dynamic performance, including 26 nV/Hz voltage noise density, recommends them for battery-powered audio applica­tions. Capacitive loads to 200 pF are handled without oscillation.
The OP196/OP296/OP496 are specified over the HOT extended industrial (–40°C to +125°C) temperature range. 3 V operation is specified over the 0°C to 125°C temperature range.
The single OP196 and the dual OP296 are available in 8-lead SO-8 surface mount packages. The dual OP296 is available in 8-lead PDIP. The quad OP496 is available in 14-lead plastic DIP and narrow SO-14 surface-mount packages.
8-Lead Narrow-Body SO
1
2
3
4
8
7
6
5
OP196
OUT A
V+
NULL
NC
NULL
–IN A
+IN A
V–
NC = NO CONNECT
PIN CONFIGURATIONS
8-Lead Narrow-Body SO
1
2
3
4
8
7
6
5
OP296
OUT A
–IN A
+IN A
V–
OUT B
–IN B
+IN B
V+
8-Lead Plastic DIP
1
2
3
4
8
7
6
5
OP296
OUT B
–IN B
+IN B
V+
OUT A
–IN A
+IN A
V–
14-Lead Plastic DIP
1
2
3
4
5
6
7
14
13
12
11
10
9
8
OP496
OUT D
–IN D
+IN D
V–
+IN C
–IN C
OUT C
OUT A
–IN A
+IN A
V+
+IN B
–IN B
OUT B
14-Lead Narrow-Body SO
1
2
3
4
5
6
7
14
13
12
11
10
9
8
OP496
OUT D
–IN D
+IN D
V–
+IN C
–IN C
OUT C
OUT A
–IN A
+IN A
V+
+IN B
–IN B
OUT B
8-Lead TSSOP
OP296
OUT A
–IN A +IN A
V–
OUT B –IN B +IN B
V+
8
1
4
5
14-Lead TSSOP
(RU Suffix)
OP496
OUT A
–IN A +IN A
V+
OUT B
–IN B
+IN B
OUT D –IN D +IN D V–
OUT C
+IN C –IN C
14
1
7
8
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2002
OP196/OP296/OP496–SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
OP196G, OP296G, OP496G 35 300 µV –40°C T
A
+125°C 650 µV OP296H, OP496H 800 µV –40°C T
A
+125°C 1.2 mV
Input Bias Current I
B
–40°C TA +125°C ±10 ±50 nA
Input Offset Current I
OS
±1.5 ±8nA
–40°C T
A
+125°C ±20 nA
Input Voltage Range V
CM
05.0V
Common-Mode Rejection Ratio CMRR 0 V ≤ VCM 5.0 V,
–40°C T
A
+125°C65 dB
Large Signal Voltage Gain A
VO
RL = 100 kΩ,
0.30 V ≤ V
OUT
4.7 V,
–40°C T
A
+125°C 150 200 V/mV
Long-Term Offset Voltage V
OS
G Grade, Note 1 550 µV H Grade, Note 1 1 mV
Offset Voltage Drift ∆V
OS
/T G Grade, Note 2 1.5 µV/°C
H Grade, Note 2 2 µV/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing High V
OH
IL = –100 µA 4.85 4.92 V I
L
= 1 mA 4.30 4.56 V
I
L
= 2 mA 4.1 V
Output Voltage Swing Low V
OL
IL = –1 mA 36 70 mV I
L
= –1 mA 350 550 mV
I
L
= –2 mA 750 mV
Output Current I
OUT
±4mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR ±2.5 V ≤ VS ±6 V,
–40°C T
A
+125°C85 dB
Supply Current per Amplifier I
SY
V
OUT
= 2.5 V, RL =
60 µA
–40°C TA +125°C4580µA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 100 k 0.3 V/µs Gain Bandwidth Product GBP 350 kHz Phase Margin ø
m
47 Degrees
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 0.8 µV p-p Voltage Noise Density e
n
f = 1 kHz 26 nV/Hz
Current Noise Density i
n
f = 1 kHz 0.19 pA/Hz
NOTES
1
Long-term offset voltage is guaranteed by a 1,000 hour life test performed on three independent lots at 12 5°C, with an LTPD of 1.3.
2
Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta.
Specifications subject to change without notice.
–2–
(@ VS = 5.0 V, VCM = 2.5 V, TA = 25C, unless otherwise noted.)
REV. C
ELECTRICAL SPECIFICATIONS
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
OP196G, OP296G, OP496G 35 300 µV 0°C T
A
125°C 650 µV OP296H, OP496H 800 µV 0°C T
A
125°C 1.2 mV
Input Bias Current I
B
±10 ±50 nA
Input Offset Current I
OS
±1 ± 8nA
Input Voltage Range V
CM
0 3.0 V
Common-Mode Rejection Ratio CMRR 0 V ≤ VCM 3.0 V,
0°C T
A
125°C60 dB
Large Signal Voltage Gain A
VO
RL = 100 k 80 200 V/mV
Long-Term Offset Voltage V
OS
G Grade, Note 1 550 µV H Grade, Note 1 1 mV
Offset Voltage Drift ∆V
OS
/T G Grade, Note 2 1.5 µV/°C
H Grade, Note 2 2 µV/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing High V
OH
IL = 100 µA 2.85 V
Output Voltage Swing Low V
OL
IL = –100 µA70mV
POWER SUPPLY
Supply Current per Amplifier I
SY
V
OUT
= 1.5 V, RL =
40 60 µA
0°C TA 125°C80µA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 100 k 0.25 V/µs Gain Bandwidth Product GBP 350 kHz Phase Margin ø
m
45 Degrees
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 0.8 µV p-p Voltage Noise Density e
n
f = 1 kHz 26 nV/Hz
Current Noise Density i
n
f = 1 kHz 0.19 pA/Hz
NOTES
1
Long-term offset voltage is guaranteed by a 1,000 hour life test performed on three independent lots at 12 5°C, with an LTPD of 1.3.
2
Offset voltage drift is the average of the 0°C to 25°C delta and the 25°C to 125°C delta.
Specifications subject to change without notice.
OP196/OP296/OP496
REV. C
–3–
(@ VS = 3.0 V, VCM = 1.5 V, TA = 25C, unless otherwise noted.)
OP196/OP296/OP496
REV. C
–4–
ELECTRICAL SPECIFICATIONS
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
OP196G, OP296G, OP496G 35 300 µV 0°C T
A
125°C 650 µV OP296H, OP496H 800 µV 0°C T
A
125°C 1.2 mV
Input Bias Current I
B
–40°C TA +125°C ±10 ±50 nA
Input Offset Current I
OS
±1 ± 8nA
–40°C T
A
+125°C ±15 nA
Input Voltage Range V
CM
012V
Common-Mode Rejection Ratio CMRR 0 V ≤ VCM 12 V,
–40°C T
A
+125°C65 dB
Large Signal Voltage Gain A
VO
RL = 100 k 300 1000 V/mV
Long-Term Offset Voltage V
OS
G Grade, Note 1 550 µV H Grade, Note 1 1 mV
Offset Voltage Drift ∆V
OS
/T G Grade, Note 2 1.5 µV/°C
H Grade, Note 2 2 µV/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing High V
OH
IL = 100 µA 11.85 V I
L
= 1 mA 11.30 V
Output Voltage Swing Low V
OL
IL = –1 mA 70 mV I
L
= –1 mA 550 mV
Output Current I
OUT
±4mA
POWER SUPPLY
Supply Current per Amplifier I
SY
V
OUT
= 6 V, RL =
60 µA
–40°C T
A
+125°C80µA
Supply Voltage Range V
S
312V
DYNAMIC PERFORMANCE
Slew Rate SR RL = 100 k 0.3 V/µs Gain Bandwidth Product GBP 450 kHz Phase Margin ø
m
50 Degrees
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 0.8 µV p-p Voltage Noise Density e
n
f = 1 kHz 26 nV/Hz
Current Noise Density i
n
f = 1 kHz 0.19 pA/Hz
NOTES
1
Long-term offset voltage is guaranteed by a 1,000 hour life test performed on three independent lots at 12 5°C, with an LTPD of 1.3.
2
Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta.
Specifications subject to change without notice.
(@ VS = 12.0 V, VCM = 6 V, TA = 25C, unless otherwise noted.)
OP196/OP296/OP496
REV. C
–5–
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 V
Input Voltage
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 V
Differential Input Voltage
2
. . . . . . . . . . . . . . . . . . . . . . . . 15 V
Output Short Circuit Duration . . . . . . . . . . . . . . . . . Indefinite
Storage Temperature Range
P, S, RU Package . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Operating Temperature Range
OP196G, OP296G, OP496G, H . . . . . . . – 40°C to +125°C
Junction Temperature Range
P, S, RU Package . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300°C
Package Type
JA
3
JC
Unit
8-Lead Plastic DIP 103 43 °C/W 8-Lead SOIC 158 43 °C/W 8-Lead TSSOP 240 43 °C/W 14-Lead Plastic DIP 83 39 °C/W 14-Lead SOIC 120 36 °C/W 14-Lead TSSOP 180 35 °C/W
NOTES
1
Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted.
2
For supply voltages less than 15 V, the absolute maximum input voltage is equal to the supply voltage.
3
θJA is specified for the worst case conditions, i.e., θJA is specified for device in
socket for P-DIP package; θJA is specified for device soldered in circuit board for SOIC and TSSOP packages.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP196/OP296/OP496 feature proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionalit y.
WARNING!
ESD SENSITIVE DEVICE
ORDERING GUIDE
Temperature Package Package
Model Range Description Option
OP196GS –40°C to +125°C 8-Lead SOIC SO-8 OP296GP* –40°C to +125°C 8-Lead Plastic DIP N-8
OP296GS –40°C to +125°C 8-Lead SOIC SO-8 OP296HRU –40°C to +125°C 8-Lead TSSOP RU-8
OP496GP* –40°C to +125°C 14-Lead Plastic DIP N-14 OP496GS –40°C to +125°C 14-Lead SOIC SO-14 OP496HRU –40°C to +125°C 14-Lead TSSOP RU-14
*
Not for new design, obsolete April 2002.
OP196/OP296/OP496–Typical Performance Characteristics
REV. C–6–
INPUT OFFSET VOLTAGE – ␮V
200
150
100
50
0
250
–250 250–200
QUANTITY – Amplifiers
–150 –100 –50 0 50 100 150 200
VS = 3V T
A
= 25ⴗC
COUNT = 400
TPC 1. Input Offset Voltage Distribution
200
150
100
50
0
250
–250 250–200
QUANTITY – Amplifiers
–150 –100 –50 0 50 100 150 200
VS = 5V T
A
= 25ⴗC
COUNT = 400
INPUT OFFSET VOLTAGE – ␮V
TPC 2. Input Offset Voltage Distribution
INPUT OFFSET VOLTAGE – ␮V
200
150
100
50
0
250
–250 250–200
QUANTITY – Amplifiers
–150 –100 –50 0 50 100 150 200
VS = 12V T
A
= 25ⴗC
COUNT = 400
TPC 3. Input Offset Voltage Distribution
INPUT OFFSET DRIFT, TCVOS – V/C
20
15
10
5
0
25
–4.0 1.0–3.5
QUANTITY – Amplifiers
–3.0 –2.5 –2.0 –1.5 –1.0 –0.5 0 0.5
VS = 5V V
CM
= 2.5V
T
A
= –40C TO ⴙ125ⴗC
TPC 4. Input Offset Voltage Distribution (TCVOS)
INPUT OFFSET DRIFT, TCVOS – V/C
20
15
10
5
0
25
–4.0 1.0–3.5
QUANTITY – Amplifiers
–3.0 –2.5 –2.0 –1.5 –1.0 –0.5 0 0.5
VS = 12V V
CM
= 6V
T
A
= –40C TO ⴙ125ⴗC
1.5
TPC 5. Input Offset Voltage Distribution (TCVOS)
TEMPERATURE – C
INPUT OFFSET VOLTAGE – V
600
400
400
75 15050 25 0 25 50 75 100 125
200
0
–200
3V VS 12V
V
CM
=
V
S
2
TPC 6. Input Offset Voltage vs. Temperature
OP196/OP296/OP496
REV. C
–7–
TEMPERATURE – C
INPUT BAIS CURRENT – nA
25
20
0
–75 150–50 –25 0 25 50 75 100 125
15
10
5
VS = 5V V
CM
= 2.5V
TPC 7. Input Bias Current vs. Temperature
SUPPLY VOLTAGE – V
16
4
2123
INPUT BIAS CURRENT – nA
5
12
8
14
TPC 8. Input Bias Current vs. Supply Voltage
COMMON-MODE VOLTAGE – V
40
0
40
2.5 2.52.0
INPUT BIAS CURRENT nA
1.5 1.0 0.5 0 0.5 1.0 1.5 2.0
30
20
20
30
10
–10
VS = 2.5V T
A
= 25ⴗC
TPC 9. Input Bias Current vs. Common-Mode Voltage
LOAD CURRENT – mA
1000
100
1
0.001 100.01
OUTPUT VOLTAGE – mV
0.1 1
10
SOURCE
SINK
VS = ⴞ1.5V
TPC 10. Output Voltage to Supply Rail vs. Load Current
LOAD CURRENT – mA
1000
100
1
0.001 100.01
OUTPUT VOLTAGE – mV
0.1 1
10
SOURCE
SINK
VS = ⴞ2.5V
TPC 11. Output Voltage to Supply Rail vs. Load Current
LOAD CURRENT – mA
1000
100
1
0.001 100.01
OUTPUT VOLTAGE – mV
0.1 1
10
SOURCE
SINK
VS = ⴞ6V
TPC 12. Output Voltage to Supply Rail vs. Load Current
FREQUENCY – Hz
90
80
–10
10 1M100
OPEN-LOOP GAIN – dB
1k 10k 100k
70
60
50
40
30
20
10
0
225
PHASE SHIFT – C
0
45
90
135
180
VS = ⴞ2.5V T
A
= –40ⴗC
GAIN
PHASE
TPC 16. Open-Loop Gain and Phase vs. Frequency (No Load)
FREQUENCY – Hz
90
80
–10
10 1M100
OPEN-LOOP GAIN – dB
1k 10k 100k
70
60
50
40
30
20
10
0
225
PHASE SHIFT – C
0
45
90
135
180
VS = 2.5V T
A
= 125ⴗC
PHASE
GAIN
TPC 17. Open-Loop Gain and Phase vs. Frequency (No Load)
TEMPERATURE – C
950
800
200
–75 150–50
OPEN-LOOP GAIN – V/mV
–25 0 25 50 75 100 125
650
500
350
VS = 5V
0.3V
<
VO < 4.7V
R
L
= 100k
TPC 18. Open-Loop Gain vs. Temperature
TEMPERATURE – C
4.95
4.70
3.7 –75 150–50
V
OH
OUTPUT VOLTAGE – V
–25 0 25 50 75 100 125
4.45
4.2
3.85
IL = 100␮A
IL = 1mA
IL = 2mA
VS = 5V
TPC 13. Output Voltage Swing vs. Temperature
TEMPERATURE – C
0.80
0.60
–75 150–50
V
OL
OUTPUT VOLTAGE – V
–25 0 25 50 75 100 125
0.50
0.30
0.10
IL = –100␮A
IL = –1mA
VS = 5V
TPC 14. Output Voltage Swing vs. Temperature
FREQUENCY – Hz
90
80
–10
10 1M100
OPEN-LOOP GAIN – dB
1k 10k 100k
70
60
50
40
30
20
10
0
225
PHASE SHIFT – C
0
45
90
135
180
VS = 2.5V T
A
= 25ⴗC
PHASE
GAIN
TPC 15. Open-Loop Gain and Phase vs. Frequency (No Load)
OP196/OP296/OP496
REV. C
–8–
OP196/OP296/OP496
REV. C
–9–
LOAD – k
500
100
400
300
200
600
0
150 1100 50 10 2
OPEN-LOOP GAIN – V/mV
VS = 5V
T
A
= 25ⴗC
TPC 19. Open-Loop Gain vs. Resistive Load
FREQUENCY – Hz
70
60
–30
10 1M100
CLOSED-LOOP GAIN – dB
1k 10k 100k
50
40
30
20
10
0
10
20
VS = ⴞ2.5V R
L
= 10k
T
A
= 25ⴗC
TPC 20. Closed-Loop Gain vs. Frequency
FREQUENCY – Hz
1000
500
0
100 1M1k
OUTPUT IMPEDANCE –
10k 100k
900
800
700
600
400
300
200
100
ACL = 10
ACL = 1
VS = 2.5V T
A
= 25ⴗC
TPC 21. Output Impedance vs. Frequency
FREQUENCY – Hz
CMRR – dB
140
–40
100 10M1k 10k 100k 1M
120
100
80
60
40
20
0
–20
VS = 2.5V T
A
= 25ⴗC
ALL CHANNELS
160
TPC 22. CMRR vs. Frequency
PSRR – dB
FREQUENCY – Hz
160
140
–40
10 10M100 1k 10k 1M100k
120
100
80
60
40
20
0
–20
VS = 5V T
A
= 25ⴗC
+PSRR
–PSRR
TPC 23. PSRR vs. Frequency
FREQUENCY – Hz
6
5
0
1k 1M10k
MAXIMUM OUTPUT SWING – V
100k
4
2
3
1
VS = 2.5V V
IN
= 5V p-p
A
V
= 1
R
L
= 100k
TPC 24. Maximum Output Swing vs. Frequency
TEMPERATURE – C
90
50
20
–75 150–50
I
SY
/A MPLIFIER – A
–40 –25 0 25 50 8575 100 125
80
70
40
30
60
VS = 12V
VS = 3V
VS = 5V
TPC 25. Supply Current/Amplifier vs. Temperature
SUPPLY VOLTAGE – V
55
50
35
1133
I
SY
/A MPLIFIER – A
5791112
45
40
TA = 25ⴗC
TPC 26. Supply Current/Amplifier vs. Supply Voltage
FREQUENCY – Hz
80
70
0
11k10 100
60
50
40
30
20
10
VOLTAGE NOISE DENSITY – nV/ Hz
VS = 2.5V T
A
= 25ⴗC
V
CM
= 0V
TPC 27. Voltage Noise Density vs. Frequency
FREQUENCY – Hz
0.6
0.5
0
11k10
CURRENT NOISE DENSITY – pA/ Hz
100
0.4
0.3
0.2
0.1
VS = 2.5V T
A
= 25ⴗC
V
CM
= 0V
TPC 28. Input Bias Current Noise Density vs. Frequency
SETTLING TIME – ␮s
10
–10
0305
INPUT STEP – V
10 15 20 25
8
2
4
6
8
6
4
0
–2
OUTPUT SWING
– OUTPUT SWING
VS = 6V
T
A
= 25ⴗC
TO 0.1%
TPC 29. Settling Time to 0.1% vs. Step Size
10
0%
100
90
1s
2mV
VS = ⴞ2.5V A
V
= 10k
e
n
= 0.8V p-p
TPC 30. 0.1 Hz to 10 Hz Noise
OP196/OP296/OP496
REV. C–10–
OP196/OP296/OP496
REV. C
–11–
1x
1x
2x
2x
Q8
Q7
Q6
Q5
R4A
R4B
I2
1x1x
Q4
Q3
2x2x
Q2
Q1
R3A
R3B
Q9
I3
Q13
Q11
D3
Q12
QC1
Q10
QC2
Q15
CC1
Q14
R2
R1
I1 R6
CF1
D4
Q17
D5
Q18
R5
R7
QL1
Q16
CF2
D6
Q19
2x 1x
I4
CC2
D7
1
*
5
*
Q20
1.5x
1x
D10
R9
D8
Q21
R8
D9
Q22
Q23
I5
OUT
+IN
–IN
V
EE
V
CC
*
OP196 ONLY
TPC 36. Simplified Schematic
10
0%
100
90
2␮s
20mV
VS = 2.5V A
V
= 1
R
L
= 10k
C
L
= 100pF
T
A
= 25ⴗC
100mV
0V
TPC 31. Small Signal Transient Response
10
0%
100
90
VS = ⴞ2.5V A
V
= 1
R
L
= 100k
C
L
= 100pF
TA = 25ⴗC
2␮s
20mV
100mV
0V
TPC 32. Small Signal Transient Response
10
0%
100
90
1V
VS = 2.5V R
L
= 10k
10␮s
TPC 33. Large Signal Transient Response
10
0%
100
90
1V
VS = ⴞ2.5V R
L
= 100k
10␮s
TPC 34. Large Signal Transient Response
CH A: 40.0V FS 5.00␮V/DIV
MKR: 36.8␮V/ Hz
0Hz
10Hz
MKR: 1.00Hz BW: 145mHz
TPC 35. 1/f Noise Corner, VS = ±5 V, AV = 1,000
OP196/OP296/OP496
REV. C
–12–
APPLICATIONS INFORMATION Functional Description
The OP196 family of operational amplifiers is comprised of single­supply, micropower, rail-to-rail input and output amplifiers. Input offset voltage (V
OS
) is only 300 µV maximum, while the output will deliver ±5 mA to a load. Supply current is only 50 µA, while bandwidth is over 450 kHz and slew rate is 0.3 V/µs. TPC 36 is a simplified schematic of the OP196—it displays the novel cir­cuit design techniques used to achieve this performance.
Input Overvoltage Protection
The OPx96 family of op amps uses a composite PNP/NPN input stage. Transistor Q1 in Figure 36 has a collector-base voltage of 0 V if +IN = V
EE
. If +IN then exceeds VEE, the junc­tion will be forward biased and large diode currents will flow, which may damage the device. The same situation applies to +IN on the base of transistor Q5 being driven above V
CC
. There­fore, the inverting and noninverting inputs must not be driven above or below either supply rail unless the input current is limited.
Figure 1 shows the input characteristics for the OPx96 family. This photograph was generated with the power supply pins connected to ground and a curve tracer’s collector output drive connected to the input. As shown in the figure, when the input voltage exceeds either supply by more than 0.6 V, internal pn-junctions energize and permit current flow from the inputs to the supplies. If the current is not limited, the amplifier may be damaged. To prevent damage, the input current should be limited to no more than 5 mA.
10
0%
100
90
8
6
4
2
0
2
4
6
8
1.5 1 0.5 0 0.5 1 1.5
INPUT VOLTAGE – V
INPUT CURRENT – mA
Figure 1. Input Overvoltage I-V Characteristics of the OPx96 Family
Output Phase Reversal
Some other operational amplifiers designed for single-supply operation exhibit an output voltage phase reversal when their inputs are driven beyond their useful common-mode range. Typically for single-supply bipolar op amps, the negative supply determines the lower limit of their common-mode range. With these common-mode limited devices, external clamping diodes are required to prevent input signal excursions from exceeding the device’s negative supply rail (i.e., GND) and triggering output phase reversal.
The OPx96 family of op amps is free from output phase reversal effects due to its novel input structure. Figure 2 illustrates the performance of the OPx96 op amps when the input is driven beyond the supply rails. As previously mentioned, amplifier input current must be limited if the inputs are driven beyond
the supply rails. In the circuit of Figure 2, the source ampli­tude is ±15 V, while the supply voltage is only ±5 V. In this case, a 2 k source resistor limits the input current to 5 mA.
10
0%
100
90
VS = 5V A
V
= 1
5V
1ms
5V
0
0
V
IN
V
OUT
VOLTAGE – 5V/DIV
TIME – 1ns/ DIV
Figure 2. Output Voltage Phase Reversal Behavior
Input Offset Voltage Nulling
The OP196 provides two offset adjust terminals that can be used to null the amplifier’s internal V
OS
. In general, operational
amplifier terminals should never be used to adjust system offset voltages. A 100 k potentiometer, connected as shown in Fig­ure 3, is recommended to null the OP196’s offset voltage. Offset nulling does not adversely affect TCV
OS
performance, providing
that the trimming potentiometer temperature coefficient does not exceed ±100 ppm/°C.
6
7
2
3
V–
V+
OP196
100k
4
1
5
Figure 3. Offset Nulling Circuit
Driving Capacitive Loads
OP196 family amplifiers are unconditionally stable with capaci­tive loads less than 170 pF. When driving large capacitive loads in unity-gain configurations, an in-the-loop compensation technique is recommended, as illustrated in Figure 4.
OP296
C
F
V
IN
R
G
R
F
R
X
C
L
V
OUT
RX = WHERE RO = OPEN-LOOP OUTPUT RESISTANCE
R
O RG
R
F
CF = I + ( ) ( ) CL R
O
I
|A
CL
|
RF + R
G
R
F
Figure 4. In-the-Loop Compensation Technique for Driving Capacitive Loads
OP196/OP296/OP496
REV. C
–13–
A Micropower False-Ground Generator
Some single supply circuits work best when inputs are biased above ground, typically at 1/2 of the supply voltage. In these cases, a false-ground can be created by using a voltage divider buffered by an amplifier. One such circuit is shown in Figure 5.
This circuit will generate a false-ground reference at 1/2 of the supply voltage, while drawing only about 55 µA from a 5 V supply. The circuit includes compensation to allow for a 1 µF bypass capacitor at the false-ground output. The benefit of a large capacitor is that not only does the false-ground present a very low dc resistance to the load, but its ac impedance is low as well.
6
2
3
10k
OP196
100
4
5V OR 12V
0.022F
1F
240k
240k
1F
2.5V OR 6V
7
Figure 5. A Micropower False-Ground Generator
Single-Supply Half-Wave and Full-Wave Rectifiers
An OP296, configured as a voltage follower operating from a single supply, can be used as a simple half-wave rectifier in low frequency (<400 Hz) applications. A full-wave rectifier can be configured with a pair of OP296s as illustrated in Figure 6.
A1
8
1
3
4
5V
1/2 OP296
2k
2
A2
5
6
2Vp-p
<500Hz
7
1/2 OP296
R1
100k
R2
100k
V
OUT
A FULL-WAVE RECTIFIED OUTPUT
V
OUT
B HALF-WAVE RECTIFIED OUTPUT
10
0%
100
90
500mV1V
500µs
500mV
f = 500Hz
INPUT
V
OUT
B
(HALF-WAVE
OUTPUT)
V
OUT
A
(FULL-WAVE
OUTPUT)
Figure 6. Single-Supply Half-Wave and Full-Wave Rectifiers Using an OP296
The circuit works as follows: When the input signal is above 0 V, the output of amplifier A1 follows the input signal. Since the noninverting input of amplifier A2 is connected to A1’s output, op amp loop control forces A2’s inverting input to the same potential. The result is that both terminals of R1 are at the
same potential and no current flows in R1. Since there is no current flow in R1, the same condition must exist in R2; thus, the output of the circuit tracks the input signal. When the input signal is below 0 V, the output voltage of A1 is forced to 0 V. This condition now forces A2 to operate as an inverting voltage follower because the noninverting terminal of A2 is also at 0 V. The output voltage of V
OUT
A is then a full-wave rectified version of the input signal. A resistor in series with A1’s noninverting input protects the ESD diodes when the input signal goes below ground.
Square Wave Oscillator
The oscillator circuit in Figure 7 demonstrates how a rail-to-rail output swing can reduce the effects of power supply variations on the oscillator’s frequency. This feature is especially valuable in battery powered applications, where voltage regulation may not be available. The output frequency remains stable as the supply voltage changes because the RC charging current, which is derived from the rail-to-rail output, is proportional to the supply voltage. Since the Schmitt trigger threshold level is also proportional to supply voltage, the frequency remains relatively independent of supply voltage. For a supply voltage change from 9 V to 5 V, the output frequency only changes about 4 Hz. The slew rate of the amplifier limits the oscillation frequency to a maximum of about 200 Hz at a supply voltage of 5 V.
59k
1/2 OP296/ OP496
100k
100k
FREQ OUT
f
OSC
= < 200Hz @ V+ = 5V
1
RC
C
V+
R
2
3
4
8
1
Figure 7. Square Wave Oscillator Has Stable Frequency Regardless of Supply Voltage Changes
A 3 V Low Dropout, Linear Voltage Regulator
Figure 8 shows a simple 3 V voltage regulator design. The regu­lator can deliver 50 mA load current while allowing a 0.2 V dropout voltage. The OP296’s rail-to-rail output swing easily drives the MJE350 pass transistor without requiring special drive circuitry. With no load, its output can swing to less than the pass transistor’s base-emitter voltage, turning the device nearly off. At full load, and at low emitter-collector voltages, the transistor beta tends to decrease. The additional base current is easily handled by the OP296 output.
The AD589 provides a 1.235 V reference voltage for the regula­tor. The OP296, operating with a noninverting gain of 2.43, drives the base of the MJE350 to produce an output voltage of
3.0 V. Since the MJE350 operates in an inverting (common­emitter) mode, the output feedback is applied to the OP296’s noninverting input.
OP196/OP296/OP496
REV. C
–14–
1/2
OP296
4
1
3
2
8
1000pF
44.2k 1%
30.9k 1%
AD589
43k
1.235V
MJE 350
100F
V
IN
5V TO 3.2V
I
L
< 50mA
V
O
Figure 8. 3 V Low Dropout Voltage Regulator
Figure 9 shows the regulator’s recovery characteristics when its output underwent a 20 mA to 50 mA step current change.
10
0%
100
90
2V
50µs
10mV
50mA
30mA
OUTPUT
STEP CURRENT CONTROL
WAVEFORM
Figure 9. Output Step Load Current Recovery
Buffering a DAC Output
Multichannel TrimDACs® such as the AD8801/AD8803, are widely used for digital nulling and similar applications. These DACs have rail-to-rail output swings, with a nominal output resistance of 5 k. If a lower output impedance is required, an OP296 amplifier can be added. Two examples are shown in Figure 10. One amplifier of an OP296 is used as a simple buffer to reduce the output resistance of DAC A. The OP296 provides rail-to-rail output drive while operating down to a 3 V supply and requiring only 50 µA of supply current.
5V
OP296
SIMPLE BUFFER 0V TO 5V +4.983V +1.1mV
R1 100k
SUMMER CIRCUIT WITH FINE TRIM ADJUSTMENT
DIGITAL INTERFACING OMITTED FOR CLARITY
AD8801/ AD8803
V
H
V
L
V
DD
V
REFH
GND
V
REFL
V
H
V
L
V
H
V
L
Figure 10. Buffering a TrimDAC OutputTPC
The next two DACs, B and C, sum their outputs into the other OP296 amplifier. In this circuit DAC C provides the coarse output voltage setting and DAC B is used for fine adjustment. The insertion of R1 in series with DAC B attenuates its contri­bution to the voltage sum node at the DAC C output.
A High-Side Current Monitor
In the design of power supply control circuits, a great deal of design effort is focused on ensuring a pass transistor’s long-term reliability over a wide range of load current conditions. As a result, monitoring and limiting device power dissipation is of prime importance in these designs. The circuit illustrated in Figure 11 is an example of a 5 V, single-supply high-side current monitor that can be incorporated into the design of a voltage regulator with fold-back current limiting or a high current power supply with crowbar protection. This design uses an OP296’s rail-to­rail input voltage range to sense the voltage drop across a 0.1 current shunt. A p-channel MOSFET is used as the feedback element in the circuit to convert the op amp’s differential input voltage into a current. This current is then applied to R2 to gen­erate a voltage that is a linear representation of the load current. The transfer equation for the current monitor is given by:
Monitor Output = R2 ×
R
SENSE
R1
 
 
× I
L
For the element values shown, the Monitor Output’s transfer characteristic is 2.5 V/A.
8
1
234
1/2
OP296
5V
5V
S
G
D
M1
3N163
MONITOR
OUTPUT
R2
2.49k
R1
100
R
SENSE
0.1
I
L
5V
Figure 11. A High-Side Load Current Monitor
A Single-Supply RTD Amplifier
The circuit in Figure 12 uses three op amps on the OP496 to produce a bridge driver for an RTD amplifier while operating from a single 5 V supply. The circuit takes advantage of the OP496’s wide output swing to generate a bridge excitation voltage of 3.9 V. An AD589 provides a 1.235 V reference for the bridge current. Op amp A1 drives the bridge to maintain
1.235 V across the parallel combination of the 6.19 k and
2.55 M resistors, which generates a 200 µA current source. This current divides evenly and flows through both halves of the bridge. Thus, 100 µA flows through the RTD to generate an output voltage which is proportional to its resistance. For improved accuracy, a 3-wire RTD is recommended to balance the line resistance in both 100 legs of the bridge.
TrimDAC is a registered trademark of Analog Devices Inc.
OP196/OP296/OP496
REV. C
–15–
* OP496 SPICE Macro-model REV. C, 5/95 * ARG / ADSC * * Copyright 1995 by Analog Devices, Inc. * * Refer to “README.DOC” file for License Statement. * Use of this model indicates your acceptance of the * terms and provisions in the License Statement. * * Node assignments * Noninverting input * Inverting input * Positive supply * Negative supply * Output * *
.SUBCKT OP496 1 2 99 50 49
* * INPUT STAGE
*
IREF 21 50 1U QB1 21 21 99 99 QP 1 QB2 22 21 99 99 QP 1 QB34 219999QP1.5 QB4 22 22 50 50 QN 2 QB5 11 22 50 50 QN 3 Q154750QN2 Q264850QN2 Q344750QN1 Q444850QN1 Q5501799QP2 Q6503899QP2 EOS 3 2 POLY(1) (17,98) 35U 1 Q7991950QN2 Q8993 1050QN2 Q9 12 11 9 99 QP 2 Q10 13 11 10 99 QP 2 Q11 11 11 9 99 QP 1 Q12 11 11 10 99 QP 1 R1 99 5 50K R2 99 6 50K R3 12 50 50K R4 13 50 50K IOS 1 2 0.75N C10 5 6 3.183P C11 12 13 3.183P
CIN 1 2 1P
* * GAIN STAGE *
EREF 98 0 POLY(2) (99,0) (50,0) 0 0.5 0.5 G1 98 15 POLY(2) (6,5) (13,12) 0 10U 10U R10 15 98 251.641MEG CC 15 49 8P D1 15 99 DX D2 50 15 DX
* * COMMON-MODE STAGE *
ECM 16 98 POLY(2) (1,98) (2,98) 0 0.5 0.5 R11 16 17 1MEG R12 17 98 10
* * OUTPUT STAGE *
ISY 99 50 20U EIN 35 50 POLY(1) (15,98) 1.42735 1 Q24 37 35 36 50 QN 1 QD4 37 37 38 99 QP 1 Q27 40 37 38 99 QP 1 R5 36 39 150K R6 99 38 45K Q26 39 42 50 50 QN 3 QD5 40 40 39 50 QN 1 Q28 41 40 44 50 QN 1 QL1 37 41 99 99 QP 1 R7 99 41 10.7K I4 99 43 2U QD7 42 42 50 50 QN 2 QD6 43 43 42 50 QN 2 Q29 47 43 44 50 QN 1 Q30 44 45 50 50 QN 1.5 QD10 45 46 50 50 QN 1 R9 45 46 175 Q31 46 47 48 99 QP 1 QD8 47 47 48 99 QP 1 QD9 48 48 51 99 QP 5 R8 99 51 2.9K I5 99 46 1U Q32 49 48 99 99 QP 10 Q33 49 44 50 50 QN 4 .MODEL DX D() .MODEL QN NPN(BF=120VAF=100) .MODEL QP PNP(BF=80 VAF=60) .ENDS
V
OUT
5V
A3
A2
A1
100k
0.1␮F
1/4 OP496
1/4 OP496
100k
GAIN = 259
200
10-TURNS
26.7k
26.7k
100
6.17k
37.4k
5V
100
RTD
2.55M
AD589
1/4 OP496
NOTE: ALL RESISTORS 1% OR BETTER
392
392
20k
Figure 12. A Single-Supply RTD Amplifier
Amplifiers A2 and A3 are configured in a two op amp instru­mentation amplifier configuration. For ease of measurement, the IA resistors are chosen to produce a gain of 259, so that each 1°C increase in temperature results in a 10 mV increase in the output voltage. To reduce measurement noise, the band­width of the amplifier is limited. A 0.1 µF capacitor, connected in parallel with the 100 k resistor on amplifier A3, creates a pole at 16 Hz.
OP196/OP296/OP496
REV. C
–16–
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
C00312–0–1/02(C)
PRINTED IN U.S.A.
8-Lead Plastic DIP
(N-8)
8
14
5
0.430 (10.92)
0.348 (8.84)
0.280 (7.11)
0.240 (6.10)
PIN 1
SEATING PLANE
0.022 (0.558)
0.014 (0.356)
0.060 (1.52)
0.015 (0.38)
0.210 (5.33) MAX
0.130 (3.30) MIN
0.070 (1.77)
0.045 (1.15)
0.100 (2.54)
BSC
0.160 (4.06)
0.115 (2.93)
0.325 (8.25)
0.300 (7.62)
0.015 (0.381)
0.008 (0.204)
0.195 (4.95)
0.115 (2.93)
8-Lead Narrow Body SOIC
(SO-8)
0.1968 (5.00)
0.1890 (4.80)
8
5
41
0.2440 (6.20)
0.2284 (5.80)
PIN 1
0.1574 (4.00)
0.1497 (3.80)
0.0688 (1.75)
0.0532 (1.35)
SEATING
PLANE
0.0098 (0.25)
0.0040 (0.10)
0.0192 (0.49)
0.0138 (0.35)
0.0500 (1.27)
BSC
0.0098 (0.25)
0.0075 (0.19)
0.0500 (1.27)
0.0160 (0.41)
8° 0°
0.0196 (0.50)
0.0099 (0.25)
x 45°
8-Lead TSSOP
(RU-8)
8
5
4
1
0.122 (3.10)
0.114 (2.90)
0.256 (6.50)
0.246 (6.25)
0.177 (4.50)
0.169 (4.30)
PIN 1
0.0256 (0.65) BSC
SEATING
PLANE
0.006 (0.15)
0.002 (0.05)
0.0118 (0.30)
0.0075 (0.19)
0.0433 (1.10) MAX
0.0079 (0.20)
0.0035 (0.090)
0.028 (0.70)
0.020 (0.50)
8° 0°
14-Lead Plastic DIP
(N-14)
14
17
8
0.795 (20.19)
0.725 (18.42)
0.280 (7.11)
0.240 (6.10)
PIN 1
SEATING PLANE
0.022 (0.558)
0.014 (0.356)
0.060 (1.52)
0.015 (0.38)
0.210 (5.33) MAX
0.130 (3.30) MIN
0.070 (1.77)
0.045 (1.15)
0.100 (2.54)
BSC
0.160 (4.06)
0.115 (2.93)
0.325 (8.25)
0.300 (7.62)
0.015 (0.381)
0.008 (0.204)
0.195 (4.95)
0.115 (2.93)
14-Lead Narrow-Body SOIC
(SO-14)
14 8
71
0.3444 (8.75)
0.3367 (8.55)
0.2440 (6.20)
0.2284 (5.80)
0.1574 (4.00)
0.1497 (3.80)
PIN 1
SEATING
PLANE
0.0098 (0.25)
0.0040 (0.10)
0.0192 (0.49)
0.0138 (0.35)
0.0688 (1.75)
0.0532 (1.35)
0.0500 (1.27)
BSC
0.0099 (0.25)
0.0075 (0.19)
0.0500 (1.27)
0.0160 (0.41)
8° 0°
0.0196 (0.50)
0.0099 (0.25)
x 45°
14-Lead TSSOP
(RU-14)
14 8
7
1
0.201 (5.10)
0.193 (4.90)
0.256 (6.50)
0.246 (6.25)
0.177 (4.50)
0.169 (4.30)
PIN 1
SEATING
PLANE
0.006 (0.15)
0.002 (0.05)
0.0118 (0.30)
0.0075 (0.19)
0.0256 (0.65)
BSC
0.0433 (1.10) MAX
0.0079 (0.20)
0.0035 (0.090)
0.028 (0.70)
0.020 (0.50)
8° 0°
Revision History
Location Page
Data Sheet changed from REV. B to REV. C.
Edits to TYPICAL PERFORMANCE CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
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